LP2301LT1G

LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
●FEATURES
1) VDS =-20V
2) RDS(ON),[email protected],[email protected]=150mΩ
3) RDS(ON),[email protected],[email protected]=100mΩ
4) Advanced trench process technology
5) High Density Cell Design For Ultra Low On-Resistance
6) Fully Characterized Avalanche Voltage and Current
7) Improved Shoot-Through FOM
8) Simple Drive Requirement
9) Small Package Outline
10) Surface Mount Device
11) We declare that the material of product compliant with RoHS
requirements and Halogen Free .
LP2301LT1G
3
1
2
SOT– 23
3
G
Pulsed Drain Current
Operating and Storage Temperature
Range
Thermal Resistance-Junction to
Ambient(Note1)
IDM
Limits
-20
±8
-2.3
0.9
0.57
Unit
V
V
A
-8
A
TJ, Tstg –55 to +150
RθJA
175
1
2
●DEVICE MARKING AND ORDERING INFORMATION
Shipping
Device
Marking
3000/Tape&Reel
LP2301LT1G
01
10000/Tape&Reel
LP2301LT3G
01
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Drain−to−Source Voltage
VDSS
Gate−to−Source Voltage
VGS
ID
Continuous DrainCurrent
TA = 25°C
PD
Maximum Power Dissipation
TA = 75°C
D
S
W
°C
°C/W
2
1.The device mounted on 1in FR4 board with 2 oz copper
June,2015
Rev.A 1/5
LESHAN RADIO COMPANY, LTD.
LP2301LT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
Parameter
Symbol
Min.
Static
Drain−to−Source Breakdown
Voltage
V(BR)DSS
-20
Typ.
Max.
Unit
–
–
V
VGS(TH)
-0.4
–
0.9
V
IDSS
–
–
-1
μA
IGSS
–
–
±100
nA
–
69
100
Drain−to−Source On Resistance
(Note2)
RDS(on)
mΩ
–
83
150
mΩ
Forward Transconductance
gfs
–
6.5
–
S
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
–
–
–
–
–
–
–
–
–
–
15.23
5.49
2.74
17.28
3.73
36.05
6.19
882.5
145.5
97.26
–
–
–
–
–
–
–
–
–
–
IS
–
–
-2.4
A
VSD
–
-0.8
-1.2
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage
Current
DYNAMIC
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SOURCE-DRAIN DIODE
Max. Diode Forward Current
Forward Diode Voltage
nC
ns
pF
Conditions
VGS = 0 V,
ID = -250 μA
VGS = VDS,
ID = -250 μA
VDS=-9.6V,
VGS=0V
VDS = 0 V,
VGS = ±8 V
VGS = -4.5 V,
ID =-2.8 A
VGS = -2.5 V,
ID = -2 A
VDS = -5 V,
ID = -4 A
VGS =-4.5 V,
VDS = -6 V
ID = -2.8 A
VDS=-6V, RL =6 Ω
RGEN=6 Ω, VGS=4.5V
VGS = 0 V, f = 1.0
MHz,
VDS= -6 V
VGS = 0 V,
IS = -0.75A
2. Pulse Test: Pulse width≤300μs, duty cycle ≤2%.
June,2015
Rev.A 2/5
LESHAN RADIO COMPANY, LTD.
LP2301LT1G
ELECTRICAL CHARACTERISTIC CURVES
18
20
VDS=5V
16
18
16
14
14
12
10
ID (A)
ID (A)
12
8
10
8
6
6
4
4
2
2
0
0
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
2.5
VDS (V)
VGS=2.0V
VGS (V)
VGS=1.5V
FIG.2 On-Region Characteristics
0.50
0.50
0.45
0.45
0.40
0.40
0.35
0.35
RDSon (ohm)
RDSon (ohm)
FIG.1 Transfer Characteristics
VGS=2.5V
0.30
0.25
0.20
0.30
0.25
0.20
0.15
0.15
0.10
0.10
0.05
0.05
0.00
0.00
0
1
2
3
4
5
6
7
ID (A)
VGS=1.5V
0
1
2
3
4
5
6
7
8
VGS (V)
VGS=2.0V
FIG.
. 3 On-Resistance versus Drain Current
June,2015
8
FIG.4 On-Resistance vs. Gate-to-Source Voltage
Rev.A 3/5
LESHAN RADIO COMPANY, LTD.
LP2301LT1G
ELECTRICAL CHARACTERISTIC CURVES
1000
0.12
900
0.10
700
RDSon (ohm)
Capacitance (pF)
800
600
500
400
300
200
0.08
0.06
0.04
0.02
100
0.00
0
0
2
4
6
Coss
0
25
50
75 100 125 150
Temp (℃)
VDS (V)
Ciss
-50 -25
Crss
FIG.6 Capacitance
FIG.7 On-Resistance vs. Junction Temperature
-0.2
-0.3
VGSth (V)
-0.4
-0.5
-0.6
-0.7
-0.8
-50 -25
0
25
50
75 100 125 150
Temp (℃)
FIG.8 Vth vs. Junction Temperature
June,2015
Rev.A 4/5
LESHAN RADIO COMPANY, LTD.
LP2301LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
June,2015
inches
mm
Rev.A 5/5