16V P-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
16V P-Channel Enhancement-Mode MOSFET
LP2307LT1G
S-LP2307LT1G
VDS= -16V
RDS(ON), Vgs@-4.5V, Ids@-4.7A = 70 mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ
3
Features
Advanced trench process technology
1
High Density Cell Design For Ultra Low On-Resistance
2
S- Prefix for Automotive and Other Applications Requiring
SOT– 23 (TO–236AB)
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
G
1
2
S
Ordering Information
Device
Marking
Shipping
LP2307LT1G
S-LP2307LT1G
P07
3000/Tape&Reel
LP2307LT3G
S-LP2307LT3G
P07
10000/Tape&Reel
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-16
V
±8
V
3
-4.7
A
3
-3.3
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
[email protected]=25℃
Total Power Dissipation
1.1
W
[email protected] A=70℃
Total Power Dissipation
0.7
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Unit
110
℃/W
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
LP2307LT1G , S-LP2307LT1G
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-16
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V, ID=-4.7A
-
48
70
mΩ
VGS=-2.7V, ID=-3.8A
-
63
100
mΩ
VGS=-2.5V, ID=-1.0A
-
65
110
mΩ
VDS=VGS, ID=-250uA
-0.6
-0.85
-1.4
V
VDS=-10V, ID =-4.7A
-
8
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
-
S
-
-1
uA
-
-
±100
nA
ID=-4.7A
-
24
36
nC
IDSS
Drain-Source Leakage Current (Tj=25 C)
VDS=-16V, VGS=0V
-
IGSS
Gate-Source Leakage
VGS=±8V, VDS =0V
o
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-10V
-
18
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2.7
-
nC
VDS=-10V
-
22
35
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
35
55
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS=-4.5V
-
45
70
ns
tf
Fall Time
RD=10Ω
-
25
ns
Ciss
Input Capacitance
VGS=0V
-
985
40
1580
pF
Coss
Output Capacitance
VDS=-15V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
IS
Max Diode Forward Current
VSD
Diode Forward Voltage
Test Conditions
IS=-1.7A, VGS=0V
Max. Units
-1.7
A
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
LP2307LT1G , S-LP2307LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
20
Vds=6V
16
Id, DRAIN CURRENT(A)
Id DRAIN CURRENT(A)
18
14
25°C
12
10
8
6
4
2
18
16
14
Vgs=2V
12
10
8
6
Vgs=1.5V
4
2
0
0
0
0.5
1
1.5
2
V g s , G A T E - T O - SO U R C E V O L T A G E ( V )
0
2.5
0.5
Figure 1. Transfer Characteristics
1
0.9
Vgs=1.5V
0.8
0.7
0.6
0.5
Vgs=2V
0.4
0.3
Vgs=2.5V
0.2
0.1
0
0
1
2
3
4
5
6 7 8 9 10 11 12 13 14 15 16 17 18
I d - D r a i n C u rr e n t ( A )
Figure 3. On–Resistance versus Drain Current
1
1.5
2
2.5
3
3.5
4
V d s , D R A I N - TO - S O U R C E V O L T A G E ( V )
4.5
5
Figure 2. On–Region Characteristics
R d s ( o n )- O n - R e s i s t a n ce ( Ω)
R d s ( o n ) - On - R e s i s t a n c e ( Ω)
Vgs=2.5V
25°C
0.16
0.14
0.12
Id=4A
0.1
0.08
0.06
0.04
0.02
0
2
2.2
2.4
2.6
2.8
V g s - G a t e - t o - S o u r c e Vo l t a g e ( V )
Figure 4. On-Resistance vs. Gate-to-Source Voltage
Rev .O 3/4
3
LESHAN RADIO COMPANY, LTD.
LP2307LT1G , S-LP2307LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 4/4