LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113TKT1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SC-89 We declare that the material of product compliance with RoHS requirements. 1 BASE 2 EMITTER zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO Limits −50 VCEO VEBO −50 −5 to +10 IC Pc −100 Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature 3 COLLECTOR R1 Tj Tstg Unit V V V mA 200 150 −55 to +150 mW °C °C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA113TKT1G O2 1 3000/Tape & Reel LDTA113TKT3G O2 1 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol BVCBO BVCEO Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current BVEBO ICBO IEBO VCE(sat) hFE R1 fT ∗ Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor Min. −50 −50 −5 − − − 100 0.7 − Typ. − − − − − − 250 1 250 Max. − − − −0.5 −0.5 −0.3 600 1.3 − Unit V V V µA µA V − kΩ MHz Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −50V VEB= −4V IC / IB= −5mA / −0.25mA IC= −1mA , VCE= −5V − VCB= −10V , IE=5mA , f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTA113TKT1G 1k VCE= −5V DC CURRENT GAIN : hFE 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.1 DC Current gain vs. Collector Current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves −1m IC/IB=20 −500m −200m Ta=100°C 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. Collector Current 2/3 LESHAN RADIO COMPANY, LTD. LDTA113TKT1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3