LM1MA142WAT1G

S-LM1MA142WAT3G
LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use
in ultra high speed switching applications. This device is housed in the SC–70
package which is designed for low power surface mount applications.
z• Fast trr, < 10 ns
• Low CD, < 15 pF
z
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LM1MA141WAT1G
S-LM1MA141WAT1G
LM1MA142WAT1G
S-LM1MA142WAT1G
SC-70/SOT-323 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODE
40/80 V-100 mA
SURFACE MOUNT
DEVICE MARKING AND ORDERING INFORMATION
Device
Package
Shipping
LM1MA141WAT1G
S-LM1MA141WAT1G
SOT-323/SC-70
3000/Tape&Reel
LM1MA141KWA3G
S-LM1MA141WAT3G
SOT-323/SC-70
10000/Tape&Reel
LM1MA142WAT1G
S-LM1MA142WAT1G
SOT-323/SC-70
3000/Tape&Reel
LM1MA142WAT3G
S-LM1MA142WAT3G
SOT-323/SC-70
10000/Tape&Reel
3
1
2
CASE 419–04, STYLE 4
SOT–323 /SC – 70
ANODE
3
DEVICE MARKING
LM1MA141WAT1G = MN LM1MA142WAT1G=MO
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
LM1MA141WAT1G VR
LM1MA142WAT1G
Peak Reverse Voltage
LM1MA141WAT1G VRM
Forward Current
Peak Forward Current
Peak Forward Surge Current
LM1MA142WAT1G
Single
Dual
Single
Dual
Single
Dual
1
Value
40
80
40
IF
IFM
IFSM(1)
80
100
150
225
340
500
750
2
CATHODE
Unit
Vdc
Marking Symbol
Type No. 141WA142WA
Symbol
MN
MO
Vdc
mAdc
MNX
The “X” represents a smaller alpha digit Date
Code. The Date Code indicates the actual month
in which the part was manufactured.
mAdc
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Symbol
PD
TJ
Max
150
150
Unit
mW
°C
Storage Temperature
Tstg
–55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Reverse Voltage Leakage Current LM1MA141WAT1G IR
LM1MA142WAT1G
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery
VF
LM1MA141WAT1G VR
LM1MA142WAT1G
Time
CD
trr(2)
Condition
VR = 35 V
Min
—
Max
0.1
Unit
µAdc
VR = 75 V
—
0.1
IF = 100 mA
IR = 100 µA
—
40
80
1.2
—
—
Vdc
Vdc
VR=0, f=1.0 MHz
—
15
pF
IF=10mA,VR=6.0V
RL=100Ω,Irr=0.1 IR
—
10
ns
1. t = 1 SEC
2. trr Test Circuit
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LM1MA141WAT1G, S-LM1MA141WAT1G
LM1MA142WAT1G, S-LM1MA142WAT1G
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
t
Irr = 0.1 IR
90%
VR
IR , REVERSE CURRENT (µA)
TA = -40°C
1.0
0.1
TA = 25°C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
1.2
TA = 150°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
TA = 25°C
10
0
Figure 1. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.75
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 85°C
IF = 10 mA
VR = 6 V
RL = 100 Ω
tp = 2 µs
tr = 0.35 ns
10
100
10
t
10%
RL
A
trr
IF
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
Rev.O 2/3
50
LESHAN RADIO COMPANY, LTD.
LM1MA141WAT1G, S-LM1MA141WAT1G
LM1MA142WAT1G, S-LM1MA142WAT1G
SC-70/SOT-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
DIM
L
A
B
C
D
G
H
J
K
L
N
S
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
0.032 0.040
0.80
1.00
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
K
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
Rev.O 3/3