LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G S-L2SK3019LT1G Applications 3 Interfacing,switching(30V,100mA) 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit Drive circuits can be simple Drain 3 Parallel use is easy ESD>500 we declare that the material of product compliance with RoHS requirements. 1 Gate S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ∗ Gate Protection Diode Source ORDERING INFORMATION Device Marking Shipping L2SK3019LT1G S-L2SK3019LT1G KN 3000/Tape & Reel L2SK3019LT3G S-L2SK3019LT3G KN 10,000/Tape & Reel 2 A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 ID ± 100 IDM ± 400 PD 225 TJ, Tstg -55 to 150 Parameter Continuous Drain Current Pulsed Drain Current 1) Total Power Dissipation 2) Operating Junction and Storage Temperature Range mA mW o C 1) Pw≤10µs, Duty cycle≤1% 2) With each pin mounted on the recommended lands. Rev .A 1/4 LESHAN RADIO COMPANY, LTD. L2SK3019LT1G,S-L2SK3019LT1G zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit IGSS − − ±1 µA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 30 − − V ID=10µA, VGS=0V Zero gate voltage drain current IDSS − − 1.0 µA VDS=30V, VGS=0V 0.8 − 1.5 V VDS=3V, ID=100µA Parameter Gate-source leakage Conditions Gate threshold voltage VGS(th) Static drain-source on-state resistance RDS(on) − 5 8 Ω ID=10mA, VGS=4V RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V Forward transfer admittance |Yfs| 20 − − ms ID=10mA, VDS=3V Input capacitance Ciss − 13 − pF VDS=5V Output capacitance Coss − 9 − pF VGS=0V Reverse transfer capacitance Crss − 4 − pF f=1MHz Turn-on delay time td(on) − 15 − ns ID=10mA, VDD tr − 35 − ns VGS=5V td(off) − 80 − ns RL=500Ω tf − 80 − ns RG=10Ω Rise time Turn-off delay time Fall time 5V 0.15 200m 3V 3.5V 0.1 2.5V 0.05 2V 2 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 10 50 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 4 1.5 1 0.5 0 −50 −25 0.5 DRAIN CURRENT : ID (A) Fig.4 Static drain-source on-state resistance vs. drain current (Ι) 20 5 2 1 0.005 0.01 0.02 0.05 0.1 0.2 25 50 75 100 15 10 0.5 0.001 0.002 0 125 150 Fig.3 Gate threshold voltage vs. channel temperature VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C VDS=3V ID=0.1mA Pulsed CHANNEL TEMPERATURE : Tch (°C) Fig.2 Typical transfer characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 50 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 50m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m Ta=25°C Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) zElectrical characteristic curves 0.5 DRAIN CURRENT : ID (A) Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) Ta=25°C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage Rev .A 2/4 LESHAN RADIO COMPANY, LTD. L2SK3019LT1G,S-L2SK3019LT1G 0.5 8 VDS=3V Pulsed 0.2 ID=100mA 6 ID=50mA 5 4 3 2 Ta=−25°C 25°C 75°C 125°C 0.1 0.05 0.02 0.01 0.005 1 0.002 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 150 50 Ta=25°C Pulsed 20m VGS=4V 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 0.5 0 0V 5m 2m 1m 0.5m Ciss 10 5 Coss Crss 2 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage (Ι) 1000 Ta=25°C f=1MHZ VGS=0V 20 50m CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 0.05 0.1 0.2 VGS=0V Pulsed 100m Fig.8 Forward transfer admittance vs. drain current Fig.7 Static drain-source on-state resistance vs. channel temperature 100m 0.005 0.01 0.02 200m DRAIN CURRENT : ID (A) CHANNEL TEMPERATURE : Tch (°C) 200m 0.0005 0.001 0.002 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITHING TIME : t (ns) 7 10m REVERSE DRAIN CURRENT : I DR (A) VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 td(off) 200 100 50 20 tr td(on) 10 5 0.2m 0.1m 0 0.5 1 1.5 0.5 0.1 0.2 0.5 1 2 5 10 20 50 2 0.1 0.2 0.5 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.11 Typical capacitance vs. drain-source voltage Fig.10 Reverse drain current vs. source-drain voltage (ΙΙ) 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) zSwitching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.13 Switching time measurement circuit tr td (off) tf toff Fig.14 Switching time waveforms Rev .A 3/4 LESHAN RADIO COMPANY, LTD. L2SK3019LT1G,S-L2SK3019LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .A 4/4