LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA143ZET1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SC-89 We declare that the material of product compliance with RoHS requirements. 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Supply voltage Input voltage Output current Limits Symbol Unit VCC −50 V VI −30 to +5 V IO −100 IC(Max.) −100 R1 3 COLLECTOR R2 2 EMITTER mA Power dissipation Pd 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA143ZET1G L5 4.7 47 3000/Tape & Reel LDTA143ZET3G LZ 4.7 47 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Symbol Min. Typ. Max. VI(off) − − −0.5 VI(on) −1.3 − − VO(on) − −0.1 −0.3 V Unit V II − − −1.8 mA IO(off) − − −0.5 µA GI 80 − − − Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 8 10 12 − fT ∗ − 250 − MHz Input current Output current DC current gain Transition frequency Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−5mA IO/II=−5mA/−0.25mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−10mA − − VCE=−10V, IE=5mA, f=100MHz ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTA143ZET1G zElectrical characteristic curves −100 OUTPUT CURRENT : Io (A) −50 −20 −10 −5 Ta=−40°C 25°C 100°C −2 −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m VCC=−5V −2m −1m −500µ Ta=100°C 25°C −40°C −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 −0.5 OUTPUT CURRENT : IO (A) 1k 200 −2.0 −1 VO=−5V Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −1.5 −2.5 −3.0 Fig.2 Output current vs. input voltage (OFF characteristics) −500m OUTPUT VOLTAGE : VO(on) (V) 500 −1.0 INPUT VOLTAGE : VI(off) (V) Fig.1 Input voltage vs. output current (ON characteristics) DC CURRENT GAIN : GI INPUT VOLTAGE : VI(on) (V) −10m −5m VO=−0.3V −5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current −200m lO/lI=20 Ta=100°C 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/3 LESHAN RADIO COMPANY, LTD. LDTA143ZET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3