LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC144GWT1G Applications Inverter, Interface, Driver 3 • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SOT–323 (SC–70) We declare that the material of product compliance with RoHS requirements. 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DTC144GE Collector Power DTC144GUA / DTC144GKA dissipation DTC144GSA Limits 50 50 5 100 150 200 Symbol VCBO VCEO VEBO IC Pc Junction temperature Storage temperature R2 2 EMITTER Unit V V V mA mW 300 150 Tj Tstg 3 COLLECTOR −55 to +150 C C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC144GWT1G L1 _ 47 3000/Tape & Reel LDTC144GWT3G L1 _ 47 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Transition frequency of the device. Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT 50 50 5 − 65 − 68 32.9 − − − − − − − − 47 250 − − − 0.5 130 0.3 − 61.1 − V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=160µA VCB=50V VEB=4V IC=10mA , IB=0.5mA IC=5mA , VCE=5V − VCE=10V , IE= −5mA , f=100MHz ∗ 1/3 LESHAN RADIO COMPANY, LTD. LDTC144GWT1G 1k VCE=5V Ta=100°C DC CURRENT GAIN : hFE(V) 500 Ta=25°C 200 100 50 Ta= −40°C 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1 IC/IB=20/1 500m Ta=100°C Ta=25°C 200m 100m 50m Ta= −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTC144GWT1G SC−70 (SOT−323) D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 L A1 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 GENERIC MARKING DIAGRAM SOLDERING FOOTPRINT* 0.65 0.025 MIN 0.032 0.000 XXM 0.65 0.025 1 XX = Specific Device Code M = Date Code = Pb−Free Package 1.9 0.075 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches 3/3