LESHAN RADIO COMPANY, LTD. TO-92 Plastic-Encapsulate Transistors L8550 ˅ TRANSISTOR˄ PNP TO ü 92 FEATURES Power dissipation PCM : 1 Collector current ICM: -1.5 1.EMITTER ˄Tamb=25ć˅ W 2. BASE A 3. COLLECTOR Collector-base voltage V(BR)CBO :- 40 V Operating and storage junction temperature range 1 2 3 TJ ˈT stg: -55ć to +150ć ˄ Tamb=25ć ELECTRICAL CHARACTERISTICS Parameter Symbol unless Test otherwise conditions ˅ specified MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 A ˈ IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1 mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 Aˈ IC=0 -5 Collector cut-off current ICBO VCB= -40 V, IE=0 -0.1 A Collector cut-off current ICEO VCE= -20 V, IE=0 -0.1 A Emitter cut-off current IEBO VEB= -5 IC=0 -0.1 A hFE˄1˅ VCE= -1V , IC=-100 mA 85 h FE˄2˅ VCE=-1V , IC=-800 mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800 m,IB=-80 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA,IB=-80 mA -1.2 V V, V 300 DC current gain VCE=-10 V, IC=-50mA Transition frequency f 100 T MHz f =30 MHz CLASSIFICATION OF h FE(1) Rank B C D Range 85-160 120-200 160-300 L8550-1/3 LESHAN RADIO COMPANY, LTD. Typical Characteristics L8550 L8550-2/3 LESHAN RADIO COMPANY, LTD. TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L ¶ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015 L8550-3/3