DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

LESHAN RADIO COMPANY, LTD.
DUAL PNP SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
LMBT5401DW1T1G
S-LMBT5401DW1T1G
FEATURE
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
6
5
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
LMBT5401DW1T1G
S-LMBT5401DW1T1G
LMBT5401DW1T3G
S-LMBT5401DW1T3G
4
Shipping
2L
3000/Tape&Reel
2L
10000/Tape&Reel
1
2
3
SOT-363/SC-88
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
-150
Vdc
Collector–Base Voltage
V
CBO
-160
Vdc
Emitter–Base Voltage
V
EBO
-5.0
Vdc
-500
mAdc
Collector Current — Continuous
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
RθJA
1.8
556
mW/°C
°C/W
PD
300
mW
RθJA
TJ , Tstg
2.4
417
–55 to +150
mW/°C
°C/W
°C
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
C2
B1
E1
E2
B2
C1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V (BR)CEO
-150
—
Vdc
V(BR)CBO
-160
—
Vdc
V (BR)EBO
-5.0
—
Vdc
—
-50
nAdc
—
-50
µAdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C =-1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C =-100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E =-10 µAdc, I C = 0)
Collector Cutoff Current
( V CB =-120Vdc, I E = 0)
( V CB =-120Vdc, I E = 0, T A=100 °C)
I CBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LMBT5401DW1T1G , S-LMBT5401DW1T1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
50
60
50
––
240
––
––
––
– 0.2
– 0.5
Unit
ON CHARACTERISTICS (2)
DC Current Gain
(IC = –1.0mAdc, V CE = –5.0 Vdc)
(IC = –10 mAdc, V CE = –5.0 Vdc)
(IC = –50 mAdc, V CE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, I B = –5.0 mAdc)
Base–Emitter Saturation Voltage
hFE
––
VCE(sat)
Vdc
VBE(sat)
Vdc
(IC = –10 mAdc, I B = –1.0 mAdc)
––
– 1.0
(IC = –50 mAdc, I B = –5.0 mAdc)
––
– 1.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, V CE= –10 Vdc, f = 100 MHz)
Output Capacitance
(VCB= –10 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC= –1.0mAdc, VCE = –10Vdc, f = 1.0 kHz)
Noise Figure
(IC = –200 µAdc, VCE= –5.0 Vdc,Rs=10Ω, f = 1.0 kHz)
f
MHz
T
100
300
––
6.0
40
200
––
8.0
C obo
pF
h fe
—
NF
dB
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
LMBT5401DW1T1G , S-LMBT5401DW1T1G
200
150
h FE, CURRENT GAIN
T J=125°C
100
25°C
70
50
–55°C
V
V
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
CE
CE
= –1.0 V
= –5.0 V
20
30
50
100
I C , COLLECTOR CURRENT (mA)
1.0
0.9
0.8
0.7
0.6
I
0.5
C
=1.0mA
100 mA
30 mA
10mA
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I B , BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10 3
I C , COLLECTOR CURRENT (µA)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
V
CE
= 30 V
10 2
I C= I
CES
10 1
T J = 125°C
10 0
75°C
10 -1
10 -2
REVERSE
25°C
10 -3
- 0.3 - 0.2
- 0.1
FORWARD
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V BE , BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
θ V , TEMPERATURE COEFFICIENT (mV/° C)
LMBT5401DW1T1G , S-LMBT5401DW1T1G
1.0
T J =25°C
0.8
0.7
V
0.6
BE(sat)
@ I C /I B =10
0.5
0.4
0.3
0.2
V
CE(sat)
@ I C /I B =10
0.1
0
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
20 30
50
100
T J = –55°C to 135°C
2.0
1.5
1.0
0.5
θ VC for V
CE(sat)
0
- 0.5
- 1.0
- 1.5
θ VB for V BE(sat)
- 2.0
- 2.5
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
V
V
BB
100
CC
–30 V
+8.8 V
10.2V
V
10
3.0 k
100
R
C
in
0.25µF
10µs
INPUT PULSE
t r , t f < 10 ns
DUTY CYCLE = 1.0%
V
R
V
B
5.1 k
100
in
1N914
Values Shown are for I C @ 10 mA
out
T J =25°C
70
50
C, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)
0.9
2.5
30
C
20
ibo
10
7.0
C
5.0
obo
3.0
2.0
1.0
0.2
Figure 6. Switching Time Test Circuit
0.3
0.5
1.0
2.0
3.0
5.0
10
20
V R , REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
1000
700
500
100
I C /I B =10
T J= 25°C
t r @V
70
50
= 120V
t r @V
CC
30
= 30V
200
t, TIME (ns)
t, TIME (ns)
300
CC
100
70
50
20
I C /I B = 10
t f @VCC = 120V
T J= 25°C
t [email protected] V
10
CC
= 30V
t s @V
7.0
CC
= 120V
5.0
3.0
30
t d @ V BE(off)= 1.0V
V CC = 120V
20
2.0
1.0
10
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
I C , COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
100
200
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LMBT5401DW1T1G , S-LMBT5401DW1T1G
SC−88
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
4
1
2
3
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
b 6 PL
0.2 (0.008)
M
E
M
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
GENERIC
MARKING DIAGRAM*
A3
C
6
6
XX M
A1
L
1
XX
OR
M
A
1
XX = Specific Device Code
M = Date Code
Rev.O 5/5