TO-92 Plastic-Encapsulate Transistors L

LESHAN RADIO COMPANY, LTD.
TO-92 Plastic-Encapsulate Transistors
L8050
TRANSISTOR˄ NPN˅
TO
ü 92
FEATURES
Power dissipation
PCM : 1 W ˄Tamb=25ć˅
1.EMITTER
Collector current
ICM: 1.5 A
Collector-base voltage
2.BASE
3. COLLECTOR
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ ˈT stg: -55ć to +150ć
˄ Tamb=25ć
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
1 2 3
unless
Test
˅
otherwise
conditions
specified
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 ­A ˈ
IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1
IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 ­Aˈ
IC=0
5
Collector cut-off current
ICBO
VCB= 40
V,
IE=0
0.1
­A
Collector cut-off current
ICEO
VCE= 20
V,
IB=0
0.1
­A
Emitter cut-off current
IEBO
VEB= 5
V,
IC=0
0.1
­A
hFE˄1˅
VCE= 1 V , IC= 100 mA
85
h FE˄2˅
VCE= 1 V , IC=800 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 800 mA, IB= 80 mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 800mA, IB= 80 mA
1.2
V
mA ,
V
300
DC current gain
VCE= 10 V, IC= 50mA
Transition frequency
f
100
T
MHz
f =30 MHz
CLASSIFICATION OF h FE(1)
Rank
B
C
D
Range
85-160
120-200
160-300
L8050-1/3
LESHAN RADIO COMPANY, LTD.
Typical Characteristics
L8050
L8050-2/3
LESHAN RADIO COMPANY, LTD.
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
E
C
A
A1
D
b
L
¶
e
e1
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
3.300
3.700
0.130
0.146
A1
1.100
1.400
0.043
0.055
b
0.380
0.550
0.015
0.022
c
0.360
0.510
0.014
0.020
D
4.400
4.700
0.173
0.185
D1
3.430
E
4.300
0.135
4.700
0.169
1.270TYP
e
0.185
0.050TYP
e1
2.440
2.640
0.096
0.104
L
14.100
14.500
0.555
0.571
1.600
Ö
0.000
0.380
0.063
0.000
0.015
L8050-3/3