LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT3904LT1G S-LMBT3904LT1G 3 ●DEVICE MARKING AND RESISTOR VALUES Shipping Device Marking 3000/Tape&Reel LMBT3904LT1G 1AM 10000/Tape&Reel LMBT3904LT3G 1AM ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1 2 SOT-23 3 COLLECTOR Symbol VCEO VCBO VEBO IC Limits 40 60 6 200 Unit Vdc Vdc Vdc mAdc PD 225 mW RΘJA 1.8 556 mW/℃ ℃/W PD 300 mW RΘJA 2.4 417 mW/℃ ℃/W TJ,Tstg −55∼+150 ℃ 1 BASE 2 EMITTER 1. FR–5 = 1.0×0.75×0.062 in. 2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina. June,2015 Rev.A 1/6 LESHAN RADIO COMPANY, LTD. LMBT3904LT1G,S-LMBT3904LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol V BR(CEO) Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, I B = 0) V BR(CBO) Collector–Base Breakdown Voltage (I C = 10 μAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 10 μAdc, I C = 0) Collector Cutoff Current ICEX ( V CE = 30 Vdc, V EB = 3.0Vdc) Base Cutoff Current IBL (V CE = 30 Vdc, V EB = 3.0 Vdc) ON CHARACTERISTICS (Note 3.) hFE DC Current Gain (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage(3) VCE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) Base–Emitter Saturation Voltage VBE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Characteristic Symbol Current–Gain — Bandwidth Product fT (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance Cobo (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) Cibo Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance hie (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio hre (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain hfe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance hoe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure NF (VCE=5V, IC=100μA, RS=1.0kΩ ,f =1.0kHz) Min. Typ. Max. 40 – – 60 – – 6 – – – – 50 – – 50 40 70 100 60 30 – – – – – – – 300 – – Unit V V V nA nA V – – – – 0.2 0.3 0.65 – – – 0.85 0.95 Min. Typ. Max. 300 – – – – 4 V Unit MHz pF pF – – 8 1 – 10 kΩ X 10 –4 0.5 – 8 100 – 400 1 – 40 – – 5 μmhos dB 3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%. June,2015 Rev.A 2/6 LESHAN RADIO COMPANY, LTD. LMBT3904LT1G,S-LMBT3904LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) SWITCHING CHARACTERISTICS Delay Time td (V CC = 3.0 Vdc, V BE= – 0.5 Vdc,I C = 10 mAdc, I B1 = 1.0 Rise Time tr mAdc) Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc,I B1 = I B2 = 1.0 mAdc) Fall Time DUTY CYCLE = 2% 300 ns +3 V +10.9 V – – 35 – – 35 ts – – 200 tf – – 50 10 < t1 < 500 ms 275 t1 DUTY CYCLE = 2% ns +3 V +10.9 V 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit June,2015 Figure 2. Storage and Fall Time Equivalent Test Circuit Rev.A 3/6 LESHAN RADIO COMPANY, LTD. LMBT3904LT1G,S-LMBT3904LT1G ELECTRICAL CHARACTERISTICS CURVES 180 10 C,Capacitance(pF） HFE, DC Current Gain 160 140 120 100 80 60 40 20 0 1 0.1 1 10 VR, Reverse Voltage (V) Cobo 0.1 10 IC, Collector Current (mA) Cibo Figure 3. Capacitance Figure 4. Current Gain 1 VCE=1V 100 10 1 0.1 1 10 IC, Collector Current (mA) 25℃ 150℃ Figure 5. DC Current Gain June,2015 100 -55℃ VCE, Collector Emitter Voltage (V) 1000 HFE, DC Current Gain 1 0.8 0.6 0.4 0.2 0 0.001 IC=1mA 0.01 0.1 1 IB, Base Current (mA) IC=10mA IC=30mA 10 IC=100mA Figure 6. Collector Saturation Region Rev.A 4/6 LESHAN RADIO COMPANY, LTD. LMBT3904LT1G,S-LMBT3904LT1G ELECTRICAL CHARACTERISTICS CURVES IC/IB=10 2 1.5 1 0.5 0 0.001 0.01 0.1 IC, Collector Current(A) 25℃ 150℃ 1 VBEsat, Base-Emitter Saturation Voltage(V) VCEsat, Collector-Emitter Saturation Voltage (V) 2.5 1.4 1.2 IC/IB=10 1 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 IC, Collector Current(A) -55℃ 25℃ Figure 7. VCE(sat) vs IC 150℃ -55℃ Figure 8. VBE(sat) vs IC 1.4 VBE(on), Base-Emitter Voltage(V) VCE=1V 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 IC, Collector Current(A) 25℃ 150℃ 1 -55℃ Figure 9. VBE(on) vs. IC June,2015 Rev.A 5/6 1 LESHAN RADIO COMPANY, LTD. LMBT3904LT1G,S-LMBT3904LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 June,2015 inches mm Rev.A 6/6