LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751BS-40T5G S-LRB751BS-40T5G zApplications Low current rectification zFeatures Extremelysmall surface mounting type. (SOD882) Low VF High reliability. We declare that the material of product compliance with RoHS requirements. 1 2 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. zConstruction Silicon epitaxial planar SOD882 2 Anode 1 Cathode DEVICE MARKING AND ORDERING INFORMATION Device LRB751BS-40T1G S-LRB751BS-40T1G LRB751BS-40T3G S-LRB751BS-40T3G LRB751BS-40T5G S-LRB751BS-40T5G Marking Shipping 5 5000/Tape&Reel 5 8000/Tape&Reel 5 10000/Tape&Reel zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 40 30 30 200 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA mA ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR Min. - Typ. Ct - 2 Max. 0.37 0.5 Unit V µA - pF Conditions IF=1mA VR=30V VR=1V , f=1MHz Rev.A 1/3 LESHAN RADIO COMPANY, LTD. LRB751BS-40T5G , S-LRB751BS-40T5G zElectrical characteristic curves Ta=75℃ 10 0REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 Ta=125℃ 1 Ta=25℃ Ta=-25℃ 0.1 0.01 0.001 100000 Ta=125℃ 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 1 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Rev.A 2/3 LESHAN RADIO COMPANY, LTD. LRB751BS-40T5G , S-LRB751BS-40T5G SOD882 DIMENSION OUTLINE: Unit:mm Rev.A 3/3