66312 15 kV HIGH VOLTAGE, RADIATION TOLERANT ISOLATOR OPTOELECTRONIC PRODUCTS DIVISION 06/24/2015 Rev. B Features: Applications: Designed to exceed MIL-PRF-19500 radiation requirements 15 kVdc Isolation Current Transfer Ratio 150% typical Base lead provided for conventional transistor biasing High Voltage Isolation Voltage Level Shifting Grid Current Modulator Switching power supplies Medical systems DESCRIPTION The 66312 high voltage isolator consisting of an 850 nm LED optically coupled to a radiation tolerant phototransistor. This configuration has proven to be highly tolerant to both proton and total dose radiation. The isolator is built with hermetic components internally optically coupled and encased in a high temperature outer PPS plastic housing. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Isolation Voltage (Input to Output) (Note 2)....................................................................................................................... 15 kVdc Operating Free-Air Temperature Range ..............................................................................................................-40°C to +100°C Storage Temperature............................................................................................................................................-40°C to +100°C Lead Solder Temperature (10 second, 1.6mm from case) (Note 1).................................................................................... 260°C LED: Peak Forward Input Current (2 s duration).......................................................................................................................300 mA Average Forward Input Current ...........................................................................................................................................50 mA Reverse Input Voltage ........................................................................................................................................................... 3.0 V Input Power Dissipation ....................................................................................................................................................100 mW Output Transistor: Collector-Base Voltage ............................................................................................................................................................ 40 V Collector-Emitter Voltage ........................................................................................................................................................ 40 V Emitter-Base Voltage ................................................................................................................................................................ 4 V Continuous Collector Current ...............................................................................................................................................50 mA Continuous Transistor Power Dissipation ........................................................................................................................300 mW Package Dimensions PIN 1 ANODE IDENTIFIER PIN 0.280 1.100 0.030 X 45° LED END 0.355 0.050 Schematic Diagram FUNCTION 1 ANODE 2 CATHODE 3 EMITTER 4 BASE 5 COLLECTOR ANODE 1 5 COLLECTOR 0.375 0.125±0.020 3 EMITTER 0.020 TYP. 1.000±0.010 0.090 3 2 0.065 CATHODE 2 4 BASE 0.075 0.100 4 0.075 1 5 ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut Street, Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM 66312 15 kV HIGH VOLTAGE, RADIATION TOLERANT ISOLATOR 06/24/2015 Rev. B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS 1.3 1.8 V IF = 20 mA 100 µA VR = 3.0 V NOTE Input LED Input Forward Voltage VF Reverse Current IR Output Transistor Collector-Base Breakdown Voltage V(BR)CBO 40 V IC = 100 μA, IE = 0, IF = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1 mA, IB = 0, IF = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4 V IC = 0, IE = 100 μA, IF = 0 nA VCC = 20 V, IF = 0 % VCE = 1 V, IF = 10 mA V IF = 10 mA, IC = 5 mA V II-O = 25 A Collector-Emitter Cutoff Current ICEO 100 Coupled Characteristics Current Transfer Ratio CTR Collector-Emitter Saturation Voltage 50 VCE(SAT) Input – Output Isolation Voltage VI-O 0.5 15,000 Rise Time tr 20 µs VCC = 10 V, IF = 10 mA, RL = 100 Ω Fall Time tf 20 µs VCC = 10 V, IF = 10 mA, RL = 100 Ω 2 NOTES: 1) The duration can be extended to 10 seconds maximum when flow soldering. Otherwise 5 seconds with soldering iron. 2) Device considered a two terminal device with all Input pins (Anode and Cathode) shorted together and all Output pins (Collector, Emitter and Base) shorted together. SELECTION GUIDE PART # PART DESCRIPTION 66312-001 Commercial 66312-101 Screened Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut Street, Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918 www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM