66314 35 kV HIGH VOLTAGE, RADIATION TOLERANT ISOLATOR

66314
35 kV HIGH VOLTAGE, RADIATION TOLERANT ISOLATOR
OPTOELECTRONIC PRODUCTS
DIVISION
06/24/2015 Rev. A
Features:
Applications:
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Designed to exceed MIL-PRF-19500 radiation
requirements
35 kVdc Isolation
Current Transfer Ratio 150% typical
Base lead provided for conventional transistor
biasing
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High Voltage Isolation
Voltage Level Shifting
Grid Current Modulator
Switching power supplies
Medical systems
DESCRIPTION
The 66314 high voltage isolator consisting of an 850 nm LED optically coupled to a radiation tolerant phototransistor. This
configuration has proven to be highly tolerant to both proton and total dose radiation. The isolator is built with hermetic
components internally optically coupled and encased in a high temperature outer PPS plastic housing.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Isolation Voltage (Input to Output) (Note 2)....................................................................................................................... 35 kVdc
Operating Free-Air Temperature Range ..............................................................................................................-40°C to +100°C
Storage Temperature............................................................................................................................................-40°C to +100°C
Lead Solder Temperature (10 seconds, 1.6mm from case) (Note 1) .................................................................................. 260°C
LED:
Peak Forward Input Current (2 s duration).......................................................................................................................300 mA
Average Forward Input Current ...........................................................................................................................................50 mA
Reverse Input Voltage ........................................................................................................................................................... 3.0 V
Input Power Dissipation ....................................................................................................................................................100 mW
Output Transistor:
Collector-Base Voltage ............................................................................................................................................................ 40 V
Collector-Emitter Voltage ........................................................................................................................................................ 40 V
Emitter-Base Voltage ................................................................................................................................................................ 4 V
Continuous Collector Current ...............................................................................................................................................50 mA
Continuous Transistor Power Dissipation ........................................................................................................................300 mW
Package Dimensions
Schematic Diagram
PIN 1
ANODE IDENTIFIER
PIN
0.280
2.250
FUNCTION
1
ANODE
2
CATHODE
3
EMITTER
4
BASE
5
COLLECTOR
ANODE 1
0.050 X 45°
LED END
0.475 0.500
0.125±0.020
0.075
3 EMITTER
Ø0.020 TYP.
2.100±0.010
0.090
5 COLLECTOR
3
2
0.100
1
5
0.065
0.075
CATHODE 2
4 BASE
4
0.075
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement.
Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION  725 E. Walnut Street, Garland, TX 75040  (972) 272-3571  Fax (972) 487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
66314
35 kV HIGH VOLTAGE, RADIATION TOLERANT ISOLATOR
06/24/2015
Rev. A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
1.3
1.8
V
IF = 20 mA
100
µA
VR = 3.0 V
NOTE
Input LED
Input Forward Voltage
VF
Reverse Current
IR
Output Transistor
Collector-Base Breakdown Voltage
V(BR)CBO
40
V
IC = 100 μA, IE = 0, IF = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1 mA, IB = 0, IF = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4
V
IC = 0, IE = 100 μA, IF = 0
nA
VCC = 20 V, IF = 0
%
VCE = 1 V, IF = 10 mA
V
IF = 10 mA, IC = 5 mA
V
II-O = 25 A
Collector-Emitter Cutoff Current
ICEO
100
Coupled Characteristics
Current Transfer Ratio
CTR
Collector-Emitter Saturation Voltage
50
VCE(SAT)
Input – Output Isolation Voltage
VI-O
0.5
35,000
Rise Time
tr
20
µs
VCC = 10 V, IF = 10 mA,
RL = 100Ω
Fall Time
tf
20
µs
VCC = 10 V, IF = 10 mA,
RL = 100 Ω
2
NOTES:
1) The duration can be extended to 10 seconds maximum when flow soldering. Otherwise 5 seconds with soldering iron.
2) Device considered a two terminal device with all Input pins (Anode and Cathode) shorted together and all Output pins (Collector, Emitter and Base)
shorted together.
SELECTION GUIDE
PART #
PART DESCRIPTION
66314-001
Commercial
66314-101
Screened
Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement.
Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION  725 E. Walnut Street, Garland, TX 75040  (972) 272-3571  Fax (972) 487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM