CYPRESS CY14B101LA_11

CY14B101LA
CY14B101NA
1-Mbit (128 K × 8/64 K × 16) nvSRAM
1-Mbit (128 K x 8/64 K x 16) nvSRAM
Features
■
Packages
❐ 32-Pin small-outline integrated circuit (SOIC)
❐ 44-/54-Pin thin small outline package (TSOP II)
❐ 48-Pin shrink small-outline package (SSOP)
❐ 48-Ball fine-pitch ball grid array (FBGA)
Pb-free and restriction of hazardous substances (RoHS)
compliant
■
20 ns, 25 ns, and 45 ns access times
■
Internally organized as 128 K × 8 (CY14B101LA) or 64 K ×
16 (CY14B101NA)
■
Hands off automatic STORE on power-down with only a small
capacitor
■
■
STORE to QuantumTrap nonvolatile elements initiated by
software, device pin, or AutoStore on power-down
Functional Description
■
RECALL to SRAM initiated by software or power-up
■
Infinite read, write, and RECALL cycles
■
1 million STORE cycles to QuantumTrap
■
20 year data retention
■
Single 3 V +20% to -10% operation
■
Industrial temperature
The Cypress CY14B101LA/CY14B101NA is a fast static RAM
(SRAM), with a nonvolatile element in each memory cell. The
memory is organized as 128 K bytes of 8 bits each or 64 K words
of 16 bits each. The embedded nonvolatile elements incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power-down. On power-up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
Logic Block Diagram[1, 2, 3]
4XDWUXP7UDS
;
5
2
:
$
$
$
$
$
$
$
$
$
$
6725(
9&&
9&$3
32:(5
&21752/
5(&$//
'
(
&
2
'
(
5
6725(5(&$//
&21752/
67$7,&5$0
$55$<
;
62)7:$5(
'(7(&7
+6%
$$
'4
'4
'4
'4
,
1
3
8
7
%
8
)
)
(
5
6
'4
'4
'4
'4
'4
'4
'4
'4
&2/801,2
2(
&2/801'(&
:(
'4
'4
&(
'4
$ $
'4
%/(
$ $ $ $ $
%+(
Notes
1. Address A0 - A16 for ×8 configuration and Address A0 - A15 for ×16 configuration.
2. Data DQ0 - DQ7 for ×8 configuration and Data DQ0 - DQ15 for ×16 configuration.
3. BHE and BLE are applicable for ×16 configuration only.
Cypress Semiconductor Corporation
Document #: 001-42879 Rev. *K
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 18, 2011
[+] Feedback
CY14B101LA
CY14B101NA
Contents
1-Mbit (128 K x 8/64 K x 16) nvSRAM .............................. 1
Features ............................................................................. 1
Functional Description ..................................................... 1
Logic Block Diagram ........................................................ 1
Pinouts .............................................................................. 3
Device Operation .............................................................. 5
SRAM Read ....................................................................... 5
SRAM Write ....................................................................... 5
AutoStore Operation ........................................................ 5
Hardware STORE Operation ............................................ 5
Hardware RECALL (Power-up) ........................................ 6
Software STORE ............................................................... 6
Software RECALL ............................................................. 6
Preventing AutoStore ....................................................... 7
Data Protection ................................................................. 7
Noise Considerations ....................................................... 7
Best Practices ................................................................... 8
Maximum Ratings ............................................................. 9
Operating Range ............................................................... 9
DC Electrical Characteristics .......................................... 9
AC Test Conditions ........................................................ 10
Document #: 001-42879 Rev. *K
Data Retention and Endurance ..................................... 10
Capacitance .................................................................... 10
Thermal Resistance ........................................................ 10
AC Switching Characteristics ....................................... 11
SRAM Read Cycle .................................................... 11
SRAM Write Cycle ..................................................... 11
AutoStore/Power-Up RECALL ....................................... 14
Software Controlled STORE/RECALL Cycle ................ 15
Hardware STORE Cycle ................................................. 16
Truth Table For SRAM Operations ................................ 17
Ordering Information ...................................................... 18
Part Numbering Nomenclature ...................................... 19
Package Diagrams .......................................................... 20
Acronyms ........................................................................ 23
Document Conventions ............................................. 23
Units of Measure ....................................................... 23
Document History Page ................................................ 24
Sales, Solutions, and Legal Information ...................... 26
Worldwide Sales and Design Support ....................... 26
Products .................................................................... 26
PSoC Solutions ......................................................... 26
Page 2 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Pinouts
Figure 1. Pin Diagram - 44-Pin TSOP II
NC
[7]
NC
A0
A1
A2
A3
A4
CE
DQ0
DQ1
VCC
VSS
DQ2
DQ3
WE
A5
A6
A7
A8
A9
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 - TSOP II
(×8)
Top View
(not to scale)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
HSB
NC
[6]
NC
[5]
NC
[4]
NC
A16
A15
OE
DQ7
DQ6
VSS
VCC
DQ5
DQ4
30
29
28
27
26
25
24
23
VCAP
A14
A13
A12
A11
A10
NC
NC
A0
A1
A2
A3
A4
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 - TSOP II
(×16)
[8]
Top View
(not to scale)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC [5]
[4]
NC
A15
OE
BHE
BLE
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
VCAP
A14
A13
A12
A11
A10
Figure 2. Pin Diagram - 48-Pin SSOP and 32-Pin SOIC
VCAP
A16
A14
A12
A7
A6
A5
NC
A4
NC
NC
NC
VSS
NC
NC
DQ0
A3
A2
A1
A0
DQ1
DQ2
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
48-SSOP
(×8)
Top View
(not to scale)
19
20
21
22
23
24
48
47
VCC
46
45
44
43
42
41
40
HSB
WE
A13
A8
A9
39
38
37
36
NC
NC
NC
VSS
NC
35
34
33
32
31
30
29
28
27
26
25
A15
NC
A11
32-SOIC
(×8)
(x8)
Top View
(not to scale)
NC
DQ6
OE
A10
CE
DQ7
DQ5
DQ4
DQ3
VCC
Notes
4. Address expansion for 2 Mbit. NC pin not connected to die.
5. Address expansion for 4 Mbit. NC pin not connected to die.
6. Address expansion for 8 Mbit. NC pin not connected to die.
7. Address expansion for 16 Mbit. NC pin not connected to die.
8. HSB pin is not available in 44-TSOP II (×16) package.
Document #: 001-42879 Rev. *K
Page 3 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Pinouts
(continued)
Figure 3. 48-Ball FBGA and 54-Pin TSOP II
48-FBGA
NC
[7]
NC
A0
A1
A2
A3
A4
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
(x8)
Top View
(not to scale)
2
3
4
5
6
NC
OE
A0
A1
A2
NC
A
NC
NC
A3
A4
CE
NC
B
1
DQ0
VSS
NC
A5
A6
NC
DQ4
C
DQ1
[4]
NC
A7
DQ5
VCC
D
VCC
DQ2
VCAP
A16
DQ6
VSS
E
DQ3
NC
A14
A15
NC
DQ7
F
NC
HSB
A12
A13
WE
NC
G
[5]
NC
A8
A9
A10
A11
NC
[6]
DQ6
DQ7
WE
A5
A6
A7
A8
A9
NC
NC
NC
H
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
54 - TSOP II
(x16)
Top View
(not to scale)
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
HSB
NC [6]
[5]
NC
[4]
NC
A15
OE
BHE
BLE
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
VCAP
A14
A13
A12
A11
A10
NC
NC
NC
Table 1. Pin Definitions
Pin Name
A0 – A16
A0 – A15
DQ0 – DQ7
DQ0 – DQ15
I/O Type
Input
Input/Output
Description
Address inputs. Used to select one of the 131,072 bytes of the nvSRAM for x8 configuration.
Address inputs. Used to select one of the 65,536 words of the nvSRAM for x16 configuration.
Bidirectional data I/O lines for ×8 configuration. Used as input or output lines depending on operation.
Bidirectional Data I/O Lines for ×16 configuration. Used as input or output lines depending on operation.
WE
Input
Write Enable input, Active LOW. When the chip is enabled and WE is LOW, data on the I/O pins is written
to the specific address location.
CE
Input
Chip Enable input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip.
OE
Input
Output Enable, Active LOW. The active LOW OE input enables the data output buffers during read cycles.
I/O pins are tristated on deasserting OE HIGH.
BHE
Input
Byte High Enable, Active LOW. Controls DQ15 - DQ8.
BLE
VSS
Input
Byte Low Enable, Active LOW. Controls DQ7 - DQ0.
VCC
HSB[8]
VCAP
NC
Ground
Ground for the device. Must be connected to the ground of the system.
Power
supply
Power supply inputs to the device. 3.0 V +20%, –10%
Input/Output Hardware STORE Busy (HSB). When LOW, this output indicates that a Hardware STORE is in progress.
When pulled LOW, external to the chip, it initiates a nonvolatile STORE operation. After each Hardware
and Software STORE operation HSB is driven HIGH for a short time (tHHHD) with standard output high
current and then a weak internal pull-up resistor keeps this pin HIGH (external pull-up resistor connection
optional).
Power
supply
AutoStore capacitor. Supplies power to the nvSRAM during power loss to store data from SRAM to nonvolatile elements.
No connect No connect. This pin is not connected to the die.
Document #: 001-42879 Rev. *K
Page 4 of 26
[+] Feedback
CY14B101LA
CY14B101NA
The CY14B101LA/CY14B101NA nvSRAM is made up of two
functional components paired in the same physical cell. They are
an SRAM memory cell and a nonvolatile QuantumTrap cell. The
SRAM memory cell operates as a standard fast static RAM. Data
in the SRAM is transferred to the nonvolatile cell (the STORE
operation), or from the nonvolatile cell to the SRAM (the RECALL
operation). Using this unique architecture, all cells are stored and
recalled in parallel. During the STORE and RECALL operations,
SRAM read and write operations are inhibited. The
CY14B101LA/CY14B101NA supports infinite reads and writes
similar to a typical SRAM. In addition, it provides infinite RECALL
operations from the nonvolatile cells and up to 1 million STORE
operations. Refer to the Truth Table For SRAM Operations on
page 17 for a complete description of read and write modes.
SRAM Read
The CY14B101LA/CY14B101NA performs a read cycle when
CE and OE are LOW and WE and HSB are HIGH. The address
specified on pins A0-16 or A0-15 determines which of the 131,072
data bytes or 65,536 words of 16 bits each are accessed. Byte
enables (BHE, BLE) determine which bytes are enabled to the
output, in the case of 16-bit words. When the read is initiated by
an address transition, the outputs are valid after a delay of tAA
(read cycle 1). If the read is initiated by CE or OE, the outputs
are valid at tACE or at tDOE, whichever is later (read cycle 2). The
data output repeatedly responds to address changes within the
tAA access time without the need for transitions on any control
input pins. This remains valid until another address change or
until CE or OE is brought HIGH, or WE or HSB is brought LOW.
SRAM Write
A write cycle is performed when CE and WE are LOW and HSB
is HIGH. The address inputs must be stable before entering the
write cycle and must remain stable until CE or WE goes HIGH at
the end of the cycle. The data on the common I/O pins DQ0–15
are written into the memory if the data is valid tSD before the end
of a WE-controlled write or before the end of a CE-controlled
write. The Byte Enable inputs (BHE, BLE) determine which bytes
are written, in the case of 16-bit words. Keep OE HIGH during
the entire write cycle to avoid data bus contention on common
I/O lines. If OE is left LOW, internal circuitry turns off the output
buffers tHZWE after WE goes LOW.
AutoStore Operation
The CY14B101LA/CY14B101NA stores data to the nvSRAM
using one of the following three storage operations: Hardware
STORE activated by HSB; Software STORE activated by an
address sequence; AutoStore on device power-down. The
AutoStore operation is a unique feature of QuantumTrap
technology
and
is
enabled
by
default
on
the
CY14B101LA/CY14B101NA.
During a normal operation, the device draws current from VCC to
charge a capacitor connected to the VCAP pin. This stored
charge is used by the chip to perform a single STORE operation.
If the voltage on the VCC pin drops below VSWITCH, the part
automatically disconnects the VCAP pin from VCC. A STORE
operation is initiated with power provided by the VCAP capacitor.
Note If the capacitor is not connected to VCAP pin, AutoStore
must be disabled using the soft sequence specified in Preventing
AutoStore on page 7. In case AutoStore is enabled without a
capacitor on VCAP pin, the device attempts an AutoStore
operation without sufficient charge to complete the store. This
corrupts the data stored in nvSRAM.
Figure 4 shows the proper connection of the storage capacitor
(VCAP) for automatic STORE operation. Refer to DC Electrical
Characteristics on page 9 for the size of VCAP. The voltage on
the VCAP pin is driven to VCC by a regulator on the chip. A pull-up
should be placed on WE to hold it inactive during power-up. This
pull-up is effective only if the WE signal is tristate during
power-up. Many MPUs tristate their controls on power-up. This
should be verified when using the pull-up. When the nvSRAM
comes out of power-on-RECALL, the MPU must be active or the
WE held inactive until the MPU comes out of reset.
To reduce unnecessary nonvolatile stores, AutoStore and
Hardware STORE operations are ignored unless at least one
write operation has taken place since the most recent STORE or
RECALL cycle. Software initiated STORE cycles are performed
regardless of whether a write operation has taken place. The
HSB signal is monitored by the system to detect if an AutoStore
cycle is in progress.
Figure 4. AutoStore Mode
VCC
0.1 uF
10 kOhm
Device Operation
VCC
WE
VCAP
VSS
VCAP
Hardware STORE Operation
The CY14B101LA/CY14B101NA provides the HSB[9] pin to
control and acknowledge the STORE operations. Use the HSB
pin to request a Hardware STORE cycle. When the HSB pin is
driven LOW, the CY14B101LA/CY14B101NA conditionally
initiates a STORE operation after tDELAY. An actual STORE cycle
only begins if a write to the SRAM has taken place since the last
STORE or RECALL cycle. The HSB pin also acts as an open
drain driver (internal 100 KΩ weak pull-up resistor) that is internally driven LOW to indicate a busy condition when the STORE
(initiated by any means) is in progress.
Note After each Hardware and Software STORE operation HSB
is driven HIGH for a short time (tHHHD) with standard output high
current and then remains HIGH by internal 100 kΩ pull-up
resistor.
Note
9. HSB pin is not available in 44-TSOP II (x16) package.
Document #: 001-42879 Rev. *K
Page 5 of 26
[+] Feedback
CY14B101LA
CY14B101NA
SRAM write operations that are in progress when HSB is driven
LOW by any means are given time (tDELAY) to complete before
the STORE operation is initiated. However, any SRAM write
cycles requested after HSB goes LOW are inhibited until HSB
returns HIGH. In case the write latch is not set, HSB is not driven
LOW by the CY14B101LA/CY14B101NA. But any SRAM read
and write cycles are inhibited until HSB is returned HIGH by MPU
or other external source.
During any STORE operation, regardless of how it is initiated,
the CY14B101LA/CY14B101NA continues to drive the HSB pin
LOW, releasing it only when the STORE is complete. Upon
completion of the STORE operation, the nvSRAM memory
access is inhibited for tLZHSB time after HSB pin returns HIGH.
Leave the HSB unconnected if it is not used.
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8FC0 Initiate STORE cycle
The software sequence may be clocked with CE controlled reads
or OE controlled reads, with WE kept HIGH for all the six READ
sequences. After the sixth address in the sequence is entered,
the STORE cycle commences and the chip is disabled. HSB is
driven LOW. After the tSTORE cycle time is fulfilled, the SRAM is
activated again for the read and write operation.
Software RECALL
Hardware RECALL (Power-up)
During power-up or after any low power condition
(VCC< VSWITCH), an internal RECALL request is latched. When
VCC again exceeds the VSWITCH on powerup, a RECALL cycle
is automatically initiated and takes tHRECALL to complete. During
this time, the HSB pin is driven LOW by the HSB driver and all
reads and writes to nvSRAM are inhibited.
Software STORE
Data is transferred from the SRAM to the nonvolatile memory by
a software address sequence. The CY14B101LA/CY14B101NA
Software STORE cycle is initiated by executing sequential CE or
OE controlled read cycles from six specific address locations in
exact order. During the STORE cycle an erase of the previous
nonvolatile data is first performed, followed by a program of the
nonvolatile elements. After a STORE cycle is initiated, further
input and output are disabled until the cycle is completed.
Because a sequence of READs from specific addresses is used
for STORE initiation, it is important that no other read or write
accesses intervene in the sequence, or the sequence is aborted
and no STORE or RECALL takes place.
Data is transferred from the nonvolatile memory to the SRAM by
a software address sequence. A Software RECALL cycle is
initiated with a sequence of read operations in a manner similar
to the Software STORE initiation. To initiate the RECALL cycle,
the following sequence of CE or OE controlled read operations
must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4C63 Initiate RECALL cycle
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared. Next, the nonvolatile information is transferred into the
SRAM cells. After the tRECALL cycle time, the SRAM is again
ready for read and write operations. The RECALL operation
does not alter the data in the nonvolatile elements.
To initiate the Software STORE cycle, the following read
sequence must be performed:
Table 2. Mode Selection
CE
WE
OE
BHE, BLE[10]
A15 - A0[11]
Mode
I/O
Power
H
X
X
X
X
Not selected
Output high-Z
Standby
L
H
L
L
X
Read SRAM
Output data
Active
L
L
X
L
X
Write SRAM
Input data
Active
L
H
L
X
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Disable
Output data
Output data
Output data
Output data
Output data
Output data
Active[12]
Notes
10. BHE and BLE are applicable for x16 configuration only.
11. While there are 17 address lines on the CY14B101LA (16 address lines on the CY14B101NA), only the 13 address lines (A14 - A2) are used to control software modes.
Rest of the address lines are do not care.
12. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle.
Document #: 001-42879 Rev. *K
Page 6 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Table 2. Mode Selection (continued)
CE
WE
OE
BHE, BLE[10]
A15 - A0[11]
Mode
I/O
Power
L
H
L
X
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4B46
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Enable
Output data
Output data
Output data
Output data
Output data
Output data
Active[12]
L
H
L
X
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8FC0
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
STORE
Output data
Output data
Output data
Output data
Output data
Output high-Z
Active ICC2[12]
L
H
L
X
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
RECALL
Output data
Output data
Output data
Output data
Output data
Output high-Z
Active[12]
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
The AutoStore is reenabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the Software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
Document #: 001-42879 Rev. *K
If the AutoStore function is disabled or reenabled, a manual
STORE operation (Hardware or Software) must be issued to
save the AutoStore state through subsequent power-down
cycles. The part comes from the factory with AutoStore enabled.
Data Protection
The CY14B101LA/CY14B101NA protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected when VCC is less than VSWITCH. If the
CY14B101LA/CY14B101NA is in a write mode (both CE and WE
are LOW) at power-up, after a RECALL or STORE, the write is
inhibited until the SRAM is enabled after tLZHSB (HSB to output
active). This protects against inadvertent writes during power-up
or brown out conditions.
Noise Considerations
Refer to CY application note AN1064.
Page 7 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Best Practices
nvSRAM products have been used effectively for over 27 years.
While ease-of-use is one of the product’s main system values,
experience gained working with hundreds of applications has
resulted in the following suggestions as best practices:
■
The nonvolatile cells in this nvSRAM product are delivered from
Cypress with 0x00 written in all cells. Incoming inspection
routines at customer or contract manufacturer’s sites
sometimes reprogram these values. Final NV patterns are
typically repeating patterns of AA, 55, 00, FF, A5, or 5A. End
product’s firmware should not assume an NV array is in a set
programmed state. Routines that check memory content
values to determine first time system configuration, cold or
warm boot status, and so on should always program a unique
NV pattern (that is, complex 4-byte pattern of 46 E6 49 53 hex
or more random bytes) as part of the final system manufacturing test to ensure these system routines work consistently.
Document #: 001-42879 Rev. *K
■
power-up boot firmware routines should rewrite the nvSRAM
into the desired state (for example, AutoStore enabled). While
the nvSRAM is shipped in a preset state, best practice is to
again rewrite the nvSRAM into the desired state as a safeguard
against events that might flip the bit inadvertently such as
program bugs and incoming inspection routines.
■
The VCAP value specified in this datasheet includes a minimum
and a maximum value size. Best practice is to meet this
requirement and not exceed the maximum VCAP value because
the nvSRAM internal algorithm calculates VCAP charge and
discharge time based on this maximum VCAP value. Customers
that want to use a larger VCAP value to make sure there is extra
store charge and store time should discuss their VCAP size
selection with Cypress to understand any impact on the VCAP
voltage level at the end of a tRECALL period.
Page 8 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Package power dissipation
capability (TA = 25 °C) .................................................. 1.0 W
Storage temperature ................................ –65 °C to +150 °C
Surface mount Pb soldering
temperature (3 Seconds).......................................... +260 °C
Maximum accumulated storage time:
At 150 °C ambient temperature........................ 1000 h
At 85 °C ambient temperature..................... 20 Years
Ambient temperature with power applied –55 °C to + 150 °C
Supply voltage on VCC relative to VSS ............–0.5 V to 4.1 V
voltage applied to outputs in High Z state
DC output current (1 output at a time, 1s duration) ..... 15 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch up current..................................................... > 200 mA
Operating Range
Range
............................................................. –0.5 V to VCC + 0.5 V
Input voltage ........................................ –0.5 V to VCC + 0.5 V
Ambient Temperature
VCC
–40 °C to +85 °C
2.7 V to 3.6 V
Industrial
Transient voltage (<20 ns) on
any pin to ground potential .................. –2.0 V to VCC + 2.0 V
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7 V to 3.6 V)
Parameter
Description
Test Conditions
Min
Typ[13]
Max
Unit
VCC
Power supply voltage
2.7
3.0
3.6
V
ICC1
Average VCC current
tRC = 20 ns
tRC = 25 ns
tRC = 45 ns
Values obtained without output loads (IOUT = 0 mA)
–
–
70
70
52
mA
mA
mA
ICC2
Average VCC current
during STORE
All inputs don’t care, VCC = Max
Average current for duration tSTORE
–
–
10
mA
ICC3
Average VCC current at All inputs cycling at CMOS levels.
Values obtained without output loads (IOUT = 0 mA)
tRC= 200 ns,
VCC (Typ), 25 °C
–
35
–
mA
ICC4
Average VCAP current All inputs don’t care. Average current for duration tSTORE
during AutoStore cycle
–
–
5
mA
ISB
VCC standby current
CE > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V).
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz
–
–
5
mA
IIX[14]
Input leakage current
(except HSB)
VCC = Max, VSS < VIN < VCC
–1
–
+1
µA
Input leakage current
(for HSB)
VCC = Max, VSS < VIN < VCC
–100
–
+1
µA
IOZ
Off-state output
leakage current
VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or
–1
–
+1
µA
VIH
Input HIGH voltage
2.0
–
VCC+0.5
V
VIL
Input LOW voltage
VSS–0.5
–
0.8
V
VOH
Output HIGH voltage
IOUT = –2 mA
2.4
–
–
V
VOL
Output LOW voltage
IOUT = 4 mA
–
–
0.4
V
VCAP
Storage capacitor
Between VCAP pin and VSS, 5 V rated
61
68
180
µF
BHE/BLE > VIH or WE < VIL
Notes
13. Typical values are at 25 °C, VCC= VCC (Typ). Not 100% tested.
14. The HSB pin has IOUT = -2 uA for VOH of 2.4 V when both active high and low drivers are disabled. When they are enabled standard VOH and VOL are valid. This
parameter is characterized but not tested.
Document #: 001-42879 Rev. *K
Page 9 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Data Retention and Endurance
Parameter
Description
DATAR
Data retention
NVC
Nonvolatile STORE operations
Min
Unit
20
Years
1,000
K
Capacitance
Parameter[15]
Description
Test Conditions
Input capacitance (except BHE, BLE and HSB)
CIN
TA = 25 °C, f = 1 MHz,
VCC = VCC (Typ)
Unit
7
pF
8
pF
Output capacitance (except HSB)
7
pF
Output capacitance (for HSB)
8
pF
Input capacitance (for BHE, BLE and HSB)
COUT
Max
Thermal Resistance
Parameter[15]
ΘJA
ΘJC
Description
Test Conditions
Thermal resistance
Test conditions follow
(Junction to ambient) standard test methods and
procedures for measuring
Thermal resistance
thermal impedance, in
(Junction to case)
accordance with
EIA/JESD51.
54-TSOP II 48-SSOP 48-FBGA 44-TSOP II 32-SOIC Unit
36.4
37.47
38.58
41.74
41.55
°C/W
10.13
24.71
11.71
11.90
24.43
°C/W
Figure 5. AC Test Loads
577 Ω
3.0 V
577 Ω
3.0 V
R1
for tristate specs
R1
OUTPUT
OUTPUT
30 pF
R2
789 Ω
5 pF
R2
789 Ω
AC Test Conditions
Input pulse levels....................................................0 V to 3 V
Input rise and fall times (10% - 90%)............................ <3 ns
Input and output timing reference levels........................ 1.5 V
Note
15. These parameters are guaranteed by design and are not tested.
Document #: 001-42879 Rev. *K
Page 10 of 26
[+] Feedback
CY14B101LA
CY14B101NA
AC Switching Characteristics
Parameters
Cypress
Alt
Parameter
Parameter
SRAM Read Cycle
tACS
tACE
[16]
tRC
tRC
20 ns
Description
25 ns
45 ns
Unit
Min
Max
Min
Max
Min
Max
Chip enable access time
Read cycle time
–
20
20
–
–
25
25
–
–
45
45
ns
ns
–
20
–
25
–
45
ns
tAA[17]
tAA
Address access time
tDOE
tOE
Output enable to data valid
–
10
–
12
–
20
ns
tOHA[17]
tLZCE[18, 19]
tHZCE[18, 19]
tLZOE[18, 19]
tHZOE[18, 19]
tPU[18]
tPD[18]
tDBE[[18]
tLZBE[18]
tHZBE[18]
tOH
Output hold after address change
3
–
3
–
3
–
ns
tLZ
Chip enable to output active
3
–
3
–
3
–
ns
tHZ
Chip disable to output inactive
–
8
–
10
–
15
ns
tOLZ
Output enable to output active
0
–
0
–
0
–
ns
tOHZ
Output disable to output inactive
–
8
–
10
–
15
ns
tPA
Chip enable to power active
0
–
0
–
0
–
ns
tPS
Chip disable to power standby
–
20
–
25
–
45
ns
SRAM Write Cycle
tWC
tWC
tWP
tPWE
tCW
tSCE
tDW
tSD
tDH
tHD
tAW
tAW
tAS
tSA
tWR
tHA
[18, 19, 20]
tWZ
tHZWE
Byte enable to data valid
Byte enable to output active
Byte disable to output inactive
–
0
–
10
–
8
–
0
–
12
–
10
–
0
–
20
15
ns
ns
ns
Write cycle time
Write pulse width
Chip enable to end of write
Data setup to end of write
Data hold after end of write
Address setup to end of write
Address setup to start of write
Address hold after end of write
Write enable to output disable
20
15
15
8
0
15
0
0
–
–
–
–
–
–
–
–
–
8
25
20
20
10
0
20
0
0
–
–
–
–
–
–
–
–
–
10
45
30
30
15
0
30
0
0
–
–
–
–
–
–
–
–
–
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
tLZWE[18, 19]
tBW
tOW
Output active after end of write
3
–
3
–
3
–
ns
-
Byte enable to end of write
15
–
20
–
30
–
ns
Switching Waveforms
Figure 6. SRAM Read Cycle #1: Address Controlled [16, 17, 21]
tRC
Address
Address Valid
tAA
Data Output
Previous Data Valid
Output Data Valid
tOHA
Notes
16. WE must be HIGH during SRAM read cycles.
17. Device is continuously selected with CE, OE, and BHE/BLE LOW.
18. These parameters are guaranteed by design and are not tested.
19. Measured ±200 mV from steady state output voltage.
20. If WE is low when CE goes low, the outputs remain in the high impedance state.
21. HSB must remain HIGH during Read and Write cycles.
Document #: 001-42879 Rev. *K
Page 11 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Figure 7. SRAM Read Cycle #2: CE and OE Controlled [22, 23, 24]
Address
Address Valid
tRC
tHZCE
tACE
CE
tAA
tLZCE
tHZOE
tDOE
OE
tHZBE
tLZOE
tDBE
BHE, BLE
tLZBE
Data Output
ICC
High Impedance
Output Data Valid
tPU
tPD
Active
Standby
Figure 8. SRAM Write Cycle #1: WE Controlled [22, 24, 25, 26]
tWC
Address
Address Valid
tSCE
tHA
CE
tBW
BHE, BLE
tAW
tPWE
WE
tSA
tSD
Data Input
Input Data Valid
tHZWE
Data Output
tHD
Previous Data
tLZWE
High Impedance
Notes
22. BHE and BLE are applicable for x16 configuration only.
23. WE must be HIGH during SRAM read cycles.
24. HSB must remain HIGH during Read and Write cycles.
25. CE or WE must be > VIH during address transitions.
26. If WE is low when CE goes low, the outputs remain in the high impedance state.
Document #: 001-42879 Rev. *K
Page 12 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Figure 9. SRAM Write Cycle #2: CE Controlled[27, 28, 29, 30]
tWC
Address Valid
Address
tSA
tSCE
tHA
CE
tBW
BHE, BLE
tPWE
WE
tHD
tSD
Input Data Valid
Data Input
High Impedance
Data Output
Figure 10. SRAM Write Cycle #3: BHE and BLE Controlled [27, 28, 29, 30]
tWC
Address
Address Valid
tSCE
CE
tSA
tHA
tBW
BHE, BLE
tAW
tPWE
WE
tSD
Data Input
tHD
Input Data Valid
High Impedance
Data Output
Notes
27. BHE and BLE are applicable for x16 configuration only.
28. If WE is low when CE goes low, the outputs remain in the high impedance state.
29. HSB must remain HIGH during Read and Write cycles.
30. CE or WE must be > VIH during address transitions..
Document #: 001-42879 Rev. *K
Page 13 of 26
[+] Feedback
CY14B101LA
CY14B101NA
AutoStore/Power-Up RECALL
Parameter
20 ns
Description
tHRECALL[31] Power-Up RECALL duration
tSTORE [32] STORE cycle duration
25 ns
45 ns
Unit
Min
–
Max
20
Min
–
Max
20
Min
–
Max
20
–
8
–
8
–
8
ms
ms
tDELAY [33]
Time allowed to complete SRAM write cycle
–
20
–
25
–
25
ns
VSWITCH
Low voltage trigger level
–
2.65
–
2.65
–
2.65
V
tVCCRISE
[34]
VHDIS[34]
tLZHSB[34]
tHHHD[34]
VCC rise time
150
–
150
–
150
–
µs
HSB output disable voltage
–
1.9
–
1.9
–
1.9
V
HSB to output active time
HSB High active time
–
–
5
500
–
–
5
500
–
–
5
500
µs
ns
Switching Waveforms
Figure 11. AutoStore or Power-Up RECALL[35]
VCC
VSWITCH
VHDIS
t VCCRISE
tHHHD
Note
32
32
tSTORE
Note
tHHHD
36
Note
HSB OUT
tSTORE
36
Note
tDELAY
tLZHSB
AutoStore
tLZHSB
tDELAY
POWERUP
RECALL
Read & Write
Inhibited
(RWI)
tHRECALL
POWER-UP
RECALL
Read & Write
tHRECALL
BROWN
OUT
AutoStore
POWER-UP
RECALL
Read & Write
POWER
DOWN
AutoStore
Notes
31. tHRECALL starts from the time VCC rises higher than VSWITCH.
32. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
33. On a Hardware STORE and AutoStore initiation, SRAM write operation continues to be enabled for time tDELAY.
34. These parameters are guaranteed by design and are not tested.
35. Read and Write cycles are ignored during STORE, RECALL, and while VCC is lower than VSWITCH.
36. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor.
Document #: 001-42879 Rev. *K
Page 14 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Software Controlled STORE/RECALL Cycle
Parameter[37, 38]
Description
Min
20
20 ns
Max
–
Min
25
25 ns
Max
–
Min
45
45 ns
Max
–
Unit
tRC
STORE/RECALL initiation cycle time
tSA
Address setup time
0
–
0
–
0
–
ns
tCW
Clock pulse width
15
–
20
–
30
–
ns
tHA
Address hold time
0
–
0
–
0
–
ns
tRECALL
RECALL duration
–
200
–
200
–
200
µs
ns
Switching Waveforms
Figure 12. CE and OE Controlled Software STORE/RECALL Cycle[38]
tRC
Address
tRC
Address #1
tSA
Address #6
tCW
tCW
CE
tHA
tSA
tHA
tHA
tHA
OE
tHHHD
HSB (STORE only)
tHZCE
tLZCE
t DELAY
39
Note
tLZHSB
High Impedance
tSTORE/tRECALL
DQ (DATA)
RWI
Figure 13. AutoStore Enable/Disable Cycle
Address
tSA
CE
tRC
tRC
Address #1
Address #6
tCW
tCW
tHA
tSA
tHA
tHA
tHA
OE
tLZCE
tHZCE
tSS
39
Note
t DELAY
DQ (DATA)
Notes
37. The software sequence is clocked with CE controlled or OE controlled reads.
38. The six consecutive addresses must be read in the order listed in Table 2 on page 6. WE must be HIGH during all six consecutive cycles.
39. DQ output data at the sixth read may be invalid because the output is disabled at tDELAY time.
Document #: 001-42879 Rev. *K
Page 15 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Hardware STORE Cycle
Parameter
20 ns
Description
25 ns
45 ns
Min
Max
Min
Max
Min
Max
20
–
25
–
25
Unit
tDHSB
HSB to output active time when write latch not set
–
tPHSB
Hardware STORE pulse width
15
–
15
–
15
–
ns
tSS [40, 41]
Soft sequence processing time
–
100
–
100
–
100
μs
Switching Waveforms
ns
Figure 14. Hardware STORE Cycle[42]
Write latch set
tPHSB
HSB (IN)
tSTORE
tHHHD
tDELAY
HSB (OUT)
tLZHSB
DQ (Data Out)
RWI
Write latch not set
tPHSB
HSB pin is driven high to VCC only by Internal
100 kOhm resistor,
HSB driver is disabled
SRAM is disabled as long as HSB (IN) is driven low.
HSB (IN)
HSB (OUT)
tDELAY
tDHSB
tDHSB
RWI
Figure 15. Soft Sequence Processing[40, 41]
Soft Sequence
Command
Address
Address #1
tSA
Address #6
tCW
tSS
Soft Sequence
Command
Address #1
tSS
Address #6
tCW
CE
VCC
Notes
40. This is the amount of time it takes to take action on a soft sequence command. VCC power must remain HIGH to effectively register command.
41. Commands such as STORE and RECALL lock out I/O until operation is complete which further increases this time. See the specific command.
42. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
Document #: 001-42879 Rev. *K
Page 16 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Truth Table For SRAM Operations
HSB must remain HIGH for SRAM operations
Table 3. Truth Table for x8 Configuration
Inputs/Outputs[43]
CE
WE
OE
Mode
Power
H
X
X
High Z
Deselect/Power-down
Standby
L
H
L
Data Out (DQ0–DQ7);
Read
Active
L
H
H
High Z
Output disabled
Active
L
L
X
Data in (DQ0–DQ7);
Write
Active
Table 4. Truth Table for x16 Configuration
BHE[44] BLE[44]
Inputs/Outputs[43]
CE
WE
OE
H
X
X
X
X
L
X
X
H
H
High Z
Output disabled
Active
L
H
L
L
L
Data Out (DQ0–DQ15)
Read
Active
L
H
L
H
L
Data Out (DQ0–DQ7);
DQ8–DQ15 in High Z
Read
Active
L
H
L
L
H
Data Out (DQ8–DQ15);
DQ0–DQ7 in High Z
Read
Active
L
H
H
L
L
High Z
Output disabled
Active
L
H
H
H
L
High Z
Output disabled
Active
L
H
H
L
H
High Z
Output disabled
Active
L
L
X
L
L
Data In (DQ0–DQ15)
Write
Active
L
L
X
H
L
Data In (DQ0–DQ7);
DQ8–DQ15 in High Z
Write
Active
L
L
X
L
H
Data In (DQ8–DQ15);
DQ0–DQ7 in High Z
Write
Active
High Z
Mode
Deselect/Power-down
Power
Standby
Notes
43. Data DQ0 - DQ7 for x8 configuration and Data DQ0 - DQ15 for x16 configuration.
44. BHE and BLE are applicable for x16 configuration only.
Document #: 001-42879 Rev. *K
Page 17 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Ordering Information
Speed
(ns)
20
25
45
Ordering Code
Package
Diagram
Package Type
CY14B101LA-ZS20XIT
51-85087
44-pin TSOP II
CY14B101LA-ZS20XI
51-85087
44-pin TSOP II
CY14B101LA-SZ25XIT
51-85127
32-pin SOIC
CY14B101LA-SZ25XI
51-85127
32-pin SOIC
CY14B101LA-ZS25XIT
51-85087
44-pin TSOP II
CY14B101LA-ZS25XI
51-85087
44-pin TSOP II
CY14B101LA-SP25XIT
51-85061
48-pin SSOP
CY14B101LA-SP25XI
51-85061
48-pin SSOP
CY14B101NA-ZS25XIT
51-85087
44-pin TSOP II
CY14B101NA-ZS25XI
51-85087
44-pin TSOP II
CY14B101LA-SZ45XIT
51-85127
32-pin SOIC
CY14B101LA-SZ45XI
51-85127
32-pin SOIC
CY14B101LA-ZS45XIT
51-85087
44-pin TSOP II
CY14B101LA-ZS45XI
51-85087
44-pin TSOP II
CY14B101LA-SP45XIT
51-85061
48-pin SSOP
CY14B101LA-SP45XI
51-85061
48-pin SSOP
CY14B101LA-BA45XIT
51-85128
48-ball FBGA
CY14B101LA-BA45XI
51-85128
48-ball FBGA
CY14B101NA-ZS45XIT
51-85087
44-pin TSOP II
CY14B101NA-ZS45XI
51-85087
44-pin TSOP II
Operating
Range
Industrial
All the above parts are Pb-free.
Document #: 001-42879 Rev. *K
Page 18 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Ordering Code Definition
CY 14 B 101 L A-ZS 20 X I T
Option:
T - Tape and Reel
Blank - Std.
Temperature:
I - Industrial (-40 to 85 °C)
Speed:
20 - 20 ns
25 - 25 ns
45 - 45 ns
Pb-free
Package:
SZP - 32 SOIC
ZSP - 44 TSOP II
SPP - 48 SSOP
BAP - 48 FBGA
ZSP - 54 TSOP II
Die revision:
Blank - No Rev
A - First Rev
Voltage:
B - 3.0 V
Data Bus:
L - x8
N - x16
Density:
101 - 1 Mb
14 - nvSRAM
Cypress
Document #: 001-42879 Rev. *K
Page 19 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Package Diagrams
Figure 16. 32-Pin SOIC (51-85127)
51-85127 *B
Figure 17. 44-Pin TSOP II (51-85087)
51-85087 *C
Document #: 001-42879 Rev. *K
Page 20 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Package Diagrams
(continued)
Figure 18. 48-Pin SSOP (51-85061)
51-85061 *D
Document #: 001-42879 Rev. *K
Page 21 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Package Diagrams
(continued)
Figure 19. 48-Ball FBGA - 6 mm x 10 mm x 1.2 mm (51-85128)
51-85128 *E
Document #: 001-42879 Rev. *K
Page 22 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Package Diagrams
(continued)
Figure 20. 54-Pin TSOP II (51-85160)
51-85160 *A
Document Conventions
Acronyms
Description
Units of Measure
nonvolatile static random access memory
Symbol
Acronym
nvSRAM
Unit of Measure
SSOP
shrink small-outline package
°C
degrees celsius
SOIC
small-outline integrated circuit
Hz
hertz
TSOP II
thin small outline package
kbit
1024 bits
FBGA
fine-pitch ball grid array
kHz
kilohertz
RoHS
restriction of hazardous substances
KΩ
kilo ohms
I/O
input/output
μA
microamperes
CMOS
complementary metal oxide semiconductor
mA
milliampere
EIA
electronic industries alliance
μF
microfarads
RWI
read and write inhibited
MHz
megahertz
μs
microseconds
ms
millisecond
ns
nanoseconds
pF
picofarads
V
volts
Ω
ohms
W
watts
Document #: 001-42879 Rev. *K
Page 23 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Document History Page
Document Title: CY14B101LA, CY14B101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM
Document Number: 001-42879
Orig. of
Submission
Rev. ECN No.
Description of Change
Change
Date
**
2050747
UNC/PYRS
01/31/08
New Datasheet
*A
2607447 GVCH/AESA
11/14/08
Removed 15 ns access speed
Updated “Features”
Updated Logic block diagram
Added footnote 1 2, 3 and 7
Pin definition: Updated WE, HSB and NC pin description
Page 4: Updated SRAM READ, SRAM WRITE, AutoStore operation description
Updated Figure 4
Page 4: Updated Hardware store operation and Hardware RECALL (Powerup)description
Page 4: Updated Software store and software recall description
Footnote 1 and 11 referenced for Mode selection Table
Added footnote 11
Updated footnote 9 and 10
Page 6: updated Data protection description
Maximum Ratings:Added Max. Accumulated storage time
Changed Output short circuit current parameter name to DC output current
Changed ICC2 from 6 mA to 10 mA
Changed ICC3 from 15 mA to 35 mA
Changed ICC4 from 6 mA to 5 mA
Changed ISB from 3 mA to 5 mA
Added IIX for HSB
Updated ICC1, ICC3, ISB and IOZ Test conditions
Changed VCAP voltage min value from 68 uF to 61 uF
Added VCAP voltage max value to 180uF
Updated footnote 12 and 13
Added footnote 14
Added Data retention and Endurance Table
Added thermal resistance value to 48-pin FBGA and 44-pin TSOP II packages
Updated Input Rise and Fall time in AC test Conditions
Referenced footnote 17 to tOHA parameter
Updated All switching waveforms
Updated footnote 17
Added footnote 20
Added Figure 10 (SRAM WRITE CYCLE:BHE and BLE controlled)
Changed tSTORE max value from 12.5 ms to 8 ms
Updated tDELAY value
Added VHDIS, tHHHD and tLZHSB parameters
Updated footnote 24
Added footnote 26 and 27
Software controlled STORE/RECALL Table: Changed tAS to tSA
Changed tGHAX to tHA
Changed tHA value from 1 ns to 0 ns
Added Figure 13
Added tDHSB parameter
Changed tHLHX to tPHSB
Updated tSS from 70 us to 100 us
Added truth table for SRAM operations
Updated ordering information and part numbering nomenclature
*B
2654484 GVCH/PYRS
02/05/09
Changed the datasheet from Advance information to Preliminary
Referenced Note 15 to parameters tLZCE, tHZCE, tLZOE, tHZOE, tLZWE and tHZWE
Updated Figure 12
Document #: 001-42879 Rev. *K
Page 24 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Document Title: CY14B101LA, CY14B101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM
Document Number: 001-42879
Orig. of
Submission
Rev. ECN No.
Description of Change
Change
Date
*C
2733909 GVCH/AESA
07/09/09
Removed 48-ball FBGA package and added 54-pin TSOP II Package
Corrected typo error in pin diagram of 48-pin SSOP
Page 4; Added note to AutoStore Operation description
Page 4; Updated Hardware STORE (HSB) Operation description
Page 5; Updated Software STORE Operation description
Added best practices
Updated VHDIS parameter description
Updated tDELAY parameter description
Updated footnote 24 and added footnote 29
*D
2757348
GVCH
08/28/09
Moved datasheet status from Preliminary to Final
Removed commercial temperature related specs
Updated thermal resistance values for all the packages
*E
2793420
GVCH
10/27/09
Updated 48-pin SSOP package diagram
*F
2839453 GVCH/PYRS
01/06/10
Changed STORE cycles to QuantumTrap from 200 K to 1 Million
Added Contents
*G
2894534
GVCH
03/17/10
Removed inactive parts from Ordering Information table.
Updated links in Sales, Solutions, and Legal Information.
Updated Package Diagrams.
*H
2922854
GVCH
04/26/10
Table 1: Added more clarity on HSB pin operation
Hardware STORE Operation: Added more clarity on HSB pin operation
Table 3: Added more clarity on BHE/BLE pin operation
Updated HSB pin operation in Figure 11
Updated footnote 36
Updated package diagram 51-85087
*I
2958648
GVCH
06/22/10
Added 48-Ball FBGA package related information
Updated package diagram 51-85128
Updated template and added Acronym table
*J
3074645
GVCH
10/29/10
48 FBGA package: 16 Mb address expansion is not supported
Removed inactive parts from Ordering Information table.
CY14B101NA-ZS20XIT, CY14B101NA-ZS20XI
Added Document Conventions table
*K
3134300
GVCH
01/11/2011 Updated style format
Updated input capacitance for BHE and BLE pin
Updated input and output capacitance for HSB pin
Fixed typo in Figure 11
Document #: 001-42879 Rev. *K
Page 25 of 26
[+] Feedback
CY14B101LA
CY14B101NA
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
Automotive
PSoC Solutions
cypress.com/go/automotive
psoc.cypress.com/solutions
cypress.com/go/clocks
PSoC 1 | PSoC 3 | PSoC 5
Clocks & Buffers
Interface
Lighting & Power Control
cypress.com/go/interface
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
Optical & Image Sensing
PSoC
Touch Sensing
USB Controllers
Wireless/RF
cypress.com/go/memory
cypress.com/go/image
cypress.com/go/psoc
cypress.com/go/touch
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2008-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 001-42879 Rev. *K
Revised January 18, 2011
Page 26 of 26
All products and company names mentioned in this document may be the trademarks of their respective holders.
[+] Feedback