HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet August 11, 2015 FN3076.15 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. • NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com. • NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz • PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60 • PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V • Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB • Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA • Complete Isolation Between Transistors • Pin Compatible with Industry Standard 3XXX Series Arrays • Pb-Free (RoHS Compliant) Applications • VHF/UHF Amplifiers • VHF/UHF Mixers • IF Converters • Synchronous Detectors Ordering Information PART NUMBER (Note) PART MARKING TEMP. RANGE (°C) PACKAGE (Pb-free) PKG. DWG. # HFA3046BZ HFA3046BZ -55 to +125 14 Ld SOIC M14.15 HFA3096BZ* HFA3096BZ -55 to +125 16 Ld SOIC M16.15 HFA3127BZ* HFA3127BZ -55 to +125 16 Ld SOIC M16.15 HFA3127RZ* 127Z -55 to +125 16 Ld 3x3 QFN L16.3x3 HFA3128BZ (No longer available or supported) HFA3128BZ -55 to +125 16 Ld SOIC M16.15 HFA3128RZ (No longer available or supported) 128Z -55 to +125 16 Ld 3x3 QFN L16.3x3 *Add “96” suffix for tape and reel. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 1998, 2005, 2013, 2015. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. HFA3046, HFA3096, HFA3127, HFA3128 Pinouts 12 4 11 7 8 Q3 6 7 8 Q3 Q1 Q2 Q5 16 1 15 2 14 3 Q1 Q2 Q5 16 15 14 13 4 13 4 12 NC 5 12 NC 5 12 11 6 11 6 11 10 7 10 7 9 8 9 8 Q3 Q4 Q3 Q4 13 10 9 HFA3127, HFA3128 (16 LD 3X3 QFN) TOP VIEW Q1B 9 3 16 15 14 13 Q2E 1 12 Q5B Q2B 2 11 Q5E NC 3 10 Q5C Q3C 4 2 9 5 6 7 8 Q4E 6 Q4 2 14 Q1E Q4 10 Q2 15 Q4B 5 5 1 Q1C Q2 Q5 3 16 NC Q3B 3 4 2 13 Q5 Q1 Q2C 2 1 14 Q1 Q3E 1 HFA3128 (16 LD SOIC) TOP VIEW HFA3127 (16 LD SOIC) TOP VIEW HFA3096 (16 LD SOIC) TOP VIEW HFA3046 (14 LD SOIC) TOP VIEW Q4C FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ = +150°C 34mA at TJ = +125°C 37mA at TJ = +110°C Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA Thermal Resistance (Typical) Operating Information Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C JA (°C/W) JC (°C/W) 14 Ld SOIC Package (Note 1) . . . . . . . 120 N/A 16 Ld SOIC Package (Note 1) . . . . . . . 115 N/A QFN Package (Notes 2, 3). . . . . . . . . . 57 10 Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . +175°C Maximum Junction Temperature (Plastic Package) . . . . . . +150°C Maximum Storage Temperature Range . . . . . . . . . -65°C to +150°C Pb-Free Reflow Profilesee link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. JA is measured with the component mounted on an evaluation PC board in free air. 2. For JC, the “case temp” location is the center of the exposed metal pad on the package underside. 3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Electrical Specifications TA = +25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DC NPN CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = 100µA, IE = 0 12 18 - 12 18 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = 100µA, IB = 0 8 12 - 8 12 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = 100µA, Base Shorted to Emitter 10 20 - 10 20 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = 10µA, IC = 0 5.5 6 - 5.5 6 - V Collector-Cutoff-Current, ICEO VCE = 6V, IB = 0 - 2 100 - 2 100 nA Collector-Cutoff-Current, ICBO VCB = 8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = 10mA, IB = 1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = 10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = 10mA, VCE = 2V 40 130 - 40 130 - Early Voltage, VA IC = 1mA, VCE = 3.5V 20 50 - 20 50 - V Base to Emitter Voltage Drift IC = 10mA - -1.5 - - -1.5 - mV/°C - 1 - - 1 - pA Collector to Collector Leakage Electrical Specifications TA = +25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DYNAMIC NPN CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50 - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = 1mA, VCE = 5V - 5.5 - - 5.5 - GHz IC = 10mA, VCE = 5V - 8 - - 8 - GHz 3 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications TA = +25°C (Continued) DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS Power Gain-Bandwidth Product, fMAX IC = 10mA, VCE = 5V - 6 - - 2.5 - GHz Base to Emitter Capacitance VBE = -3V - 200 - - 500 - fF Collector to Base Capacitance VCB = 3V - 200 - - 500 - fF Electrical Specifications TA = +25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DC PNP CHARACTERISTICS Collector to Base Breakdown Voltage, V(BR)CBO IC = -100µA, IE = 0 10 15 - 10 15 - V Collector to Emitter Breakdown Voltage, V(BR)CEO IC = -100µA, IB = 0 8 15 - 8 15 - V Collector to Emitter Breakdown Voltage, V(BR)CES IC = -100µA, Base Shorted to Emitter 10 15 - 10 15 - V Emitter to Base Breakdown Voltage, V(BR)EBO IE = -10µA, IC = 0 4.5 5 - 4.5 5 - V Collector Cutoff Current, ICEO VCE = -6V, IB = 0 - 2 100 - 2 100 nA Collector Cutoff Current, ICBO VCB = -8V, IE = 0 - 0.1 10 - 0.1 10 nA Collector to Emitter Saturation Voltage, VCE(SAT) IC = -10mA, IB = -1mA - 0.3 0.5 - 0.3 0.5 V Base to Emitter Voltage, VBE IC = -10mA - 0.85 0.95 - 0.85 0.95 V DC Forward-Current Transfer Ratio, hFE IC = -10mA, VCE = -2V 20 60 - 20 60 - Early Voltage, VA IC = -1mA, VCE = -3.5V 10 20 - 10 20 - V Base to Emitter Voltage Drift IC = -10mA - -1.5 - - -1.5 - mV/°C - 1 - - 1 - pA Collector to Collector Leakage Electrical Specifications TA = +25°C DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DYNAMIC PNP CHARACTERISTICS Noise Figure f = 1.0GHz, VCE = -5V, IC = -5mA, ZS = 50 - 3.5 - - 3.5 - dB fT Current Gain-Bandwidth Product IC = -1mA, VCE = -5V - 2 - - 2 - GHz IC = -10mA, VCE = -5V - 5.5 - - 5.5 - GHz Power Gain-Bandwidth Product IC = -10mA, VCE = -5V - 3 - - 2 - GHz Base to Emitter Capacitance VBE = 3V - 200 - - 500 - fF Collector to Base Capacitance VCB = -3V - 300 - - 600 - fF 4 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications TA = +25°C (Continued) DIE PARAMETER TEST CONDITIONS SOIC, QFN MIN TYP MAX MIN TYP MAX UNITS DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046 Input Offset Voltage IC = 10mA, VCE = 5V - 1.5 5.0 - 1.5 5.0 mV Input Offset Current IC = 10mA, VCE = 5V - 5 25 - 5 25 µA Input Offset Voltage TC IC = 10mA, VCE = 5V - 0.5 - - 0.5 - µV/°C S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site. Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 5mA 1.0E+08 0.83 -11.78 11.07 168.57 1.41E-02 78.88 0.97 -11.05 2.0E+08 0.79 -22.82 10.51 157.89 2.69E-02 68.63 0.93 -21.35 3.0E+08 0.73 -32.64 9.75 148.44 3.75E-02 59.58 0.86 -30.44 4.0E+08 0.67 -41.08 8.91 140.36 4.57E-02 51.90 0.79 -38.16 5.0E+08 0.61 -48.23 8.10 133.56 5.19E-02 45.50 0.73 -44.59 6.0E+08 0.55 -54.27 7.35 127.88 5.65E-02 40.21 0.67 -49.93 7.0E+08 0.50 -59.41 6.69 123.10 6.00E-02 35.82 0.62 -54.37 8.0E+08 0.46 -63.81 6.11 119.04 6.27E-02 32.15 0.57 -58.10 9.0E+08 0.42 -67.63 5.61 115.57 6.47E-02 29.07 0.53 -61.25 1.0E+09 0.39 -70.98 5.17 112.55 6.63E-02 26.45 0.50 -63.96 1.1E+09 0.36 -73.95 4.79 109.91 6.75E-02 24.19 0.47 -66.31 1.2E+09 0.34 -76.62 4.45 107.57 6.85E-02 22.24 0.45 -68.37 1.3E+09 0.32 -79.04 4.15 105.47 6.93E-02 20.53 0.43 -70.19 1.4E+09 0.30 -81.25 3.89 103.57 7.00E-02 19.02 0.41 -71.83 1.5E+09 0.28 -83.28 3.66 101.84 7.05E-02 17.69 0.40 -73.31 1.6E+09 0.27 -85.17 3.45 100.26 7.10E-02 16.49 0.39 -74.66 1.7E+09 0.25 -86.92 3.27 98.79 7.13E-02 15.41 0.38 -75.90 1.8E+09 0.24 -88.57 3.10 97.43 7.17E-02 14.43 0.37 -77.05 1.9E+09 0.23 -90.12 2.94 96.15 7.19E-02 13.54 0.36 -78.12 2.0E+09 0.22 -91.59 2.80 94.95 7.21E-02 12.73 0.35 -79.13 2.1E+09 0.21 -92.98 2.68 93.81 7.23E-02 11.98 0.35 -80.09 2.2E+09 0.20 -94.30 2.56 92.73 7.25E-02 11.29 0.34 -80.99 2.3E+09 0.20 -95.57 2.45 91.70 7.27E-02 10.64 0.34 -81.85 2.4E+09 0.19 -96.78 2.35 90.72 7.28E-02 10.05 0.33 -82.68 2.5E+09 0.18 -97.93 2.26 89.78 7.29E-02 9.49 0.33 -83.47 2.6E+09 0.18 -99.05 2.18 88.87 7.30E-02 8.96 0.33 -84.23 2.7E+09 0.17 -100.12 2.10 88.00 7.31E-02 8.47 0.33 -84.97 2.8E+09 0.17 -101.15 2.02 87.15 7.31E-02 8.01 0.33 -85.68 2.9E+09 0.16 -102.15 1.96 86.33 7.32E-02 7.57 0.33 -86.37 3.0E+09 0.16 -103.11 1.89 85.54 7.32E-02 7.16 0.33 -87.05 5 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor FREQ. (Hz) |S11| (Continued) PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = 5V and IC = 10mA 1.0E+08 0.72 -16.43 15.12 165.22 1.27E-02 75.41 0.95 -14.26 2.0E+08 0.67 -31.26 13.90 152.04 2.34E-02 62.89 0.88 -26.95 3.0E+08 0.60 -43.76 12.39 141.18 3.13E-02 52.58 0.79 -37.31 4.0E+08 0.53 -54.00 10.92 132.57 3.68E-02 44.50 0.70 -45.45 5.0E+08 0.47 -62.38 9.62 125.78 4.05E-02 38.23 0.63 -51.77 6.0E+08 0.42 -69.35 8.53 120.37 4.31E-02 33.34 0.57 -56.72 7.0E+08 0.37 -75.26 7.62 116.00 4.49E-02 29.47 0.51 -60.65 8.0E+08 0.34 -80.36 6.86 112.39 4.63E-02 26.37 0.47 -63.85 9.0E+08 0.31 -84.84 6.22 109.36 4.72E-02 23.84 0.44 -66.49 1.0E+09 0.29 -88.83 5.69 106.77 4.80E-02 21.75 0.41 -68.71 1.1E+09 0.27 -92.44 5.23 104.51 4.86E-02 20.00 0.39 -70.62 1.2E+09 0.25 -95.73 4.83 102.53 4.90E-02 18.52 0.37 -72.28 1.3E+09 0.24 -98.75 4.49 100.75 4.94E-02 17.25 0.35 -73.76 1.4E+09 0.22 -101.55 4.19 99.16 4.97E-02 16.15 0.34 -75.08 1.5E+09 0.21 -104.15 3.93 97.70 4.99E-02 15.19 0.33 -76.28 1.6E+09 0.20 -106.57 3.70 96.36 5.01E-02 14.34 0.32 -77.38 1.7E+09 0.20 -108.85 3.49 95.12 5.03E-02 13.60 0.31 -78.41 1.8E+09 0.19 -110.98 3.30 93.96 5.05E-02 12.94 0.31 -79.37 1.9E+09 0.18 -113.00 3.13 92.87 5.06E-02 12.34 0.30 -80.27 2.0E+09 0.18 -114.90 2.98 91.85 5.07E-02 11.81 0.30 -81.13 2.1E+09 0.17 -116.69 2.84 90.87 5.08E-02 11.33 0.30 -81.95 2.2E+09 0.17 -118.39 2.72 89.94 5.09E-02 10.89 0.29 -82.74 2.3E+09 0.16 -120.01 2.60 89.06 5.10E-02 10.50 0.29 -83.50 2.4E+09 0.16 -121.54 2.49 88.21 5.11E-02 10.13 0.29 -84.24 2.5E+09 0.16 -122.99 2.39 87.39 5.12E-02 9.80 0.29 -84.95 2.6E+09 0.15 -124.37 2.30 86.60 5.12E-02 9.49 0.29 -85.64 2.7E+09 0.15 -125.69 2.22 85.83 5.13E-02 9.21 0.29 -86.32 2.8E+09 0.15 -126.94 2.14 85.09 5.13E-02 8.95 0.29 -86.98 2.9E+09 0.15 -128.14 2.06 84.36 5.14E-02 8.71 0.29 -87.62 3.0E+09 0.14 -129.27 1.99 83.66 5.15E-02 8.49 0.29 -88.25 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) VCE = -5V and IC = -5mA 1.0E+08 0.72 -16.65 10.11 166.77 1.66E-02 77.18 0.96 -10.76 2.0E+08 0.68 -32.12 9.44 154.69 3.10E-02 65.94 0.90 -20.38 3.0E+08 0.62 -45.73 8.57 144.40 4.23E-02 56.39 0.82 -28.25 4.0E+08 0.57 -57.39 7.68 135.95 5.05E-02 48.66 0.74 -34.31 5.0E+08 0.52 -67.32 6.86 129.11 5.64E-02 42.52 0.67 -38.81 6 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 6.0E+08 0.47 -75.83 6.14 123.55 6.07E-02 37.66 0.61 -42.10 7.0E+08 0.43 -83.18 5.53 118.98 6.37E-02 33.79 0.55 -44.47 8.0E+08 0.40 -89.60 5.01 115.17 6.60E-02 30.67 0.51 -46.15 9.0E+08 0.38 -95.26 4.56 111.94 6.77E-02 28.14 0.47 -47.33 1.0E+09 0.36 -100.29 4.18 109.17 6.91E-02 26.06 0.44 -48.15 1.1E+09 0.34 -104.80 3.86 106.76 7.01E-02 24.33 0.41 -48.69 1.2E+09 0.33 -108.86 3.58 104.63 7.09E-02 22.89 0.39 -49.05 1.3E+09 0.32 -112.53 3.33 102.72 7.16E-02 21.67 0.37 -49.26 1.4E+09 0.30 -115.86 3.12 101.01 7.22E-02 20.64 0.36 -49.38 1.5E+09 0.30 -118.90 2.92 99.44 7.27E-02 19.76 0.34 -49.43 1.6E+09 0.29 -121.69 2.75 98.01 7.32E-02 19.00 0.33 -49.44 1.7E+09 0.28 -124.24 2.60 96.68 7.35E-02 18.35 0.32 -49.43 1.8E+09 0.28 -126.59 2.47 95.44 7.39E-02 17.79 0.31 -49.40 1.9E+09 0.27 -128.76 2.34 94.29 7.42E-02 17.30 0.30 -49.38 2.0E+09 0.27 -130.77 2.23 93.19 7.45E-02 16.88 0.30 -49.36 2.1E+09 0.26 -132.63 2.13 92.16 7.47E-02 16.52 0.29 -49.35 2.2E+09 0.26 -134.35 2.04 91.18 7.50E-02 16.20 0.28 -49.35 2.3E+09 0.26 -135.96 1.95 90.24 7.52E-02 15.92 0.28 -49.38 2.4E+09 0.25 -137.46 1.87 89.34 7.55E-02 15.68 0.28 -49.42 2.5E+09 0.25 -138.86 1.80 88.48 7.57E-02 15.48 0.27 -49.49 2.6E+09 0.25 -140.17 1.73 87.65 7.59E-02 15.30 0.27 -49.56 2.7E+09 0.25 -141.39 1.67 86.85 7.61E-02 15.15 0.26 -49.67 2.8E+09 0.25 -142.54 1.61 86.07 7.63E-02 15.01 0.26 -49.81 2.9E+09 0.24 -143.62 1.56 85.31 7.65E-02 14.90 0.26 -49.96 3.0E+09 0.24 -144.64 1.51 84.58 7.67E-02 14.81 0.26 -50.13 VCE = -5V, IC = -10mA 1.0E+08 0.58 -23.24 13.03 163.45 1.43E-02 73.38 0.93 -13.46 2.0E+08 0.53 -44.07 11.75 149.11 2.58E-02 60.43 0.85 -24.76 3.0E+08 0.48 -61.50 10.25 137.78 3.38E-02 50.16 0.74 -33.10 4.0E+08 0.43 -75.73 8.88 129.12 3.90E-02 42.49 0.65 -38.83 5.0E+08 0.40 -87.36 7.72 122.49 4.25E-02 36.81 0.58 -42.63 6.0E+08 0.37 -96.94 6.78 117.33 4.48E-02 32.59 0.51 -45.07 7.0E+08 0.35 -104.92 6.01 113.22 4.64E-02 29.39 0.47 -46.60 8.0E+08 0.33 -111.64 5.39 109.85 4.76E-02 26.94 0.43 -47.49 9.0E+08 0.32 -117.36 4.87 107.05 4.85E-02 25.04 0.40 -47.97 1.0E+09 0.31 -122.27 4.44 104.66 4.92E-02 23.55 0.37 -48.18 1.1E+09 0.30 -126.51 4.07 102.59 4.97E-02 22.37 0.35 -48.20 1.2E+09 0.30 -130.21 3.76 100.76 5.02E-02 21.44 0.33 -48.11 7 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor (Continued) FREQ. (Hz) |S11| PHASE(S11) |S21| PHASE(S21) |S12| PHASE(S12) |S22| PHASE(S22) 1.3E+09 0.29 -133.46 3.49 99.14 5.06E-02 20.70 0.32 -47.95 1.4E+09 0.29 -136.33 3.25 97.67 5.09E-02 20.11 0.31 -47.77 1.5E+09 0.28 -138.89 3.05 96.33 5.12E-02 19.65 0.30 -47.58 1.6E+09 0.28 -141.17 2.87 95.10 5.15E-02 19.29 0.29 -47.39 1.7E+09 0.28 -143.21 2.70 93.96 5.18E-02 19.01 0.28 -47.23 1.8E+09 0.28 -145.06 2.56 92.90 5.21E-02 18.80 0.27 -47.09 1.9E+09 0.27 -146.73 2.43 91.90 5.23E-02 18.65 0.27 -46.98 2.0E+09 0.27 -148.26 2.31 90.95 5.26E-02 18.55 0.26 -46.91 2.1E+09 0.27 -149.65 2.20 90.05 5.28E-02 18.49 0.26 -46.87 2.2E+09 0.27 -150.92 2.10 89.20 5.30E-02 18.46 0.25 -46.87 2.3E+09 0.27 -152.10 2.01 88.37 5.33E-02 18.47 0.25 -46.90 2.4E+09 0.27 -153.18 1.93 87.59 5.35E-02 18.50 0.25 -46.97 2.5E+09 0.27 -154.17 1.86 86.82 5.38E-02 18.55 0.24 -47.07 2.6E+09 0.26 -155.10 1.79 86.09 5.40E-02 18.62 0.24 -47.18 2.7E+09 0.26 -155.96 1.72 85.38 5.42E-02 18.71 0.24 -47.34 2.8E+09 0.26 -156.76 1.66 84.68 5.45E-02 18.80 0.24 -47.55 2.9E+09 0.26 -157.51 1.60 84.01 5.47E-02 18.91 0.24 -47.76 3.0E+09 0.26 -158.21 1.55 83.35 5.50E-02 19.03 0.23 -48.00 25 IB = 200µA 20 IB = 160µA 100m 10m IB =120µA 15 IB = 80µA 10 IB = 40µA 5 0 COLLECTOR CURRENT AND BASE CURRENT (A) COLLECTOR CURRENT (mA) Typical Performance Curves 1m VCE = 3V IC IB 100 10 1 100n 10n 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE 8 1n 0.5 0.6 0.7 0.8 0.9 BASE TO EMITTER VOLTAGE (V) 1.0 FIGURE 2. NPN COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves (Continued) 10.0 GAIN BANDWIDTH PRODUCT (GHz) VCE = 3V 160 DC CURRENT GAIN 140 120 100 80 60 40 20 0 1 10 100 1m 10m 8.0 VCE = 5V 6.0 VCE = 1V 4.0 2.0 0 0.1 100m FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -3V 100 IC -10m IB = -320µA COLLECTOR CURRENT AND BASE CURRENT (A) COLLECTOR CURRENT (mA) -100m IB = -240µA -15 IB = -160µA -10 IB = -80µA -5 IB -1m -100 -10 -1 -100n -10n 0 0 -1 -2 -3 -4 -1n -0.5 -5 FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE -0.8 -0.9 -1.0 FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT vs BASE TO EMITTER VOLTAGE GAIN BANDWIDTH PRODUCT (GHz) 160 140 120 100 80 60 40 20 -10 -0.7 5.0 VCE = -3V 0 -1 -0.6 BASE TO EMITTER VOLTAGE (V) COLLECTOR TO EMITTER VOLTAGE (V) DC CURRENT GAIN 10 FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) IB = -400µA -20 1.0 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (A) -25 VCE = 3V -100 -1m -10m COLLECTOR CURRENT (A) FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR CURRENT 9 -100m VCE = -5V 4.0 VCE = -3V 3.0 VCE = -1V 2.0 1.0 -0.1 -1.0 -10 -100 COLLECTOR CURRENT (mA) FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS) FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Die Characteristics DIE DIMENSIONS: PASSIVATION: 53 mils x 52 mils 1340µm x 1320µm Type: Nitride Thickness: 4kÅ 0.5kÅ METALLIZATION: PROCESS: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kÅ 0.4kÅ Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kÅ ±0.8kÅ UHF-1 SUBSTRATE POTENTIAL: (POWERED UP) Unbiased Metallization Mask Layout HFA3096, HFA3127, HFA3128 2 1340µm (53 mils) 1 16 15 3 14 4 13 5 12 6 11 7 8 9 10 1320µm (52 mils) HFA3046 2 1 14 13 3 1340µm (53 mils) 12 4 5 11 6 10 7 8 9 1320µm (52 mils) Pad numbers correspond to SOIC pinout. 10 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION August 11, 2015 FN3076.15 CHANGE Added Revision History beginning with Rev 15. Updated ordering information table with “No longer available or supported” next to HFA3128 part numbers About Intersil Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask. Reliability reports are also available from our website at www.intersil.com/support For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 11 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Package Outline Drawing M14.15 14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE Rev 1, 10/09 8.65 A 3 4 0.10 C A-B 2X 6 14 DETAIL"A" 8 0.22±0.03 D 6.0 3.9 4 0.10 C D 2X 0.20 C 2X 7 PIN NO.1 ID MARK 5 0.31-0.51 B 3 (0.35) x 45° 4° ± 4° 6 0.25 M C A-B D TOP VIEW 0.10 C 1.75 MAX H 1.25 MIN 0.25 GAUGE PLANE C SEATING PLANE 0.10 C 0.10-0.25 1.27 SIDE VIEW (1.27) DETAIL "A" (0.6) NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSEY14.5m-1994. 3. Datums A and B to be determined at Datum H. (5.40) 4. Dimension does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25mm per side. 5. The pin #1 indentifier may be either a mold or mark feature. (1.50) 6. Does not include dambar protrusion. Allowable dambar protrusion shall be 0.10mm total in excess of lead width at maximum condition. 7. Reference to JEDEC MS-012-AB. TYPICAL RECOMMENDED LAND PATTERN 12 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Small Outline Plastic Packages (SOIC) M16.15 (JEDEC MS-012-AC ISSUE C) N INDEX AREA H 0.25(0.010) M 16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M INCHES E -B- 1 2 3 L SEATING PLANE -A- A D h x 45° -C- e A1 B 0.25(0.010) M C 0.10(0.004) C A M SYMBOL MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.3859 0.3937 9.80 10.00 3 E 0.1497 0.1574 3.80 4.00 4 e B S 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 0.050 BSC 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 N NOTES: MILLIMETERS 16 0° 16 8° 0° 7 8° Rev. 1 6/05 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 13 FN3076.15 August 11, 2015 HFA3046, HFA3096, HFA3127, HFA3128 Package Outline Drawing L16.3x3 16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE Rev 2, 4/07 4X 1.5 3.00 12X 0.50 A B 6 PIN 1 INDEX AREA 6 PIN #1 INDEX AREA 16 13 1 3.00 12 1 .50 ± 0 . 15 9 4 0.15 (4X) 5 8 0.10 M C A B + 0.07 4 16X 0.23 - 0.05 TOP VIEW 16X 0.40 ± 0.10 BOTTOM VIEW SEE DETAIL "X" 0.10 C 0 . 90 ± 0.1 C BASE PLANE ( 2. 80 TYP ) ( SEATING PLANE 0.08 C 1. 50 ) SIDE VIEW ( 12X 0 . 5 ) ( 16X 0 . 23 ) C ( 16X 0 . 60) 0 . 2 REF 5 0 . 00 MIN. 0 . 05 MAX. TYPICAL RECOMMENDED LAND PATTERN DETAIL "X" NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal ± 0.05 4. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 5. Tiebar shown (if present) is a non-functional feature. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 indentifier may be either a mold or mark feature. 14 FN3076.15 August 11, 2015