Application Note 1792 Author: Nick van Vonno Total Dose Testing of the ISL70417SEH Radiation Hardened Quad Operational Amplifier Introduction Part Description This document reports the results of low and high dose rate total dose testing of the ISL70417SEH quad operational amplifier. The tests were conducted to provide an assessment of the total dose hardness of the part. Parts were irradiated under bias and with all pins grounded at low and high dose rate. The ISL70417SEH is acceptance tested on a wafer by wafer basis to 300krad(Si) at high dose rate (50 - 300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s). The ISL70417SEH is a precision quad operational amplifier featuring low noise vs power consumption characteristics, low offset voltage, low input bias current and low temperature drift, making this device the ideal choice for hardened applications requiring high DC accuracy and moderate AC performance. The ISL70417SEH is offered in a 14 lead hermetic package. Constructed with Intersil's dielectrically isolated PR40 process, this device is immune to single event latchup. The ISL70417SEH offers guaranteed performance over the full -55°C to +125°C military temperature range. Key pre- and post-radiation specifications follow. Reference Documents • MIL-STD-883 test method 1019 Key Specifications • ISL70417SEH data sheet (FN7962) • Input offset voltage . . . . . . . . . . . . . ±75μV pre, ±110μV post • Input offset voltage TC . . . . . . . . . .1.0μV/°C post maximum • Input bias current. . . . . . . . . . . . . . . ±1.0nA pre, ±5.0nA post • Input bias current TC . . . . . . . . . . . .±5pA/°C post, maximum • Supply current, each amplifier . . . . . 530µA pre, 680μA post, maximum • Voltage noise . . . . . . . . . . . . . . . . . . 8nV/√Hz post, maximum • Supply voltage range . . . . . . . . . . . . . . . . . . 4.5V-40V in beam (LET = 73MeV.cm2/mg) • Operating temperature range. . . . . . . . . . . .-55°C to +125°C OUTPUT 1 OUTPUT 4 -INPUT 1 - - -INPUT 4 +INPUT 1 + + +INPUT 4 +VCC -VCC +INPUT 2 + + +INPUT 3 -INPUT 2 - - -INPUT 3 OUTPUT 2 OUTPUT 3 FIGURE 1. ISL70417SEH BLOCK DIAGRAM January 14, 2013 AN1792.0 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2013. All Rights Reserved. Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Application Note 1792 Test Description Results Irradiation Facilities Test Results High dose rate testing was performed at 50rad(Si)/s using a Gammacell 220 60Co irradiator located in the Palm Bay, Florida Intersil facility. Low dose rate testing was performed at 0.01rad(Si)/s using the Intersil Palm Bay panoramic 60Co irradiator. Testing at low and high dose rate of the ISL70417SEH is complete. Test Fixturing Figure 2 shows the configuration used for biased irradiation. R1 R1 R1 1 14 2 13 3 12 4 11 5 10 6 9 7 8 R2 R2 R1 R1 V1 R1 V2 R1 R1 R1 R1 R1 R2 R2 R1 FIGURE 2. IRRADIATION BIAS CONFIGURATION FOR THE ISL70417SEH Characterization Equipment and Procedures The input offset voltage was extremely stable over both tests. The positive and negative input bias currents were stable over high dose rate irradiation, but showed an increase over low dose rate. The parameters remained within the post-irradiation specification limits but the part is considered low dose rate sensitive based on the 'delta parameter' diagnostic algorithm outlined in MIL-STD-888 test method 1019. The input offset current showed some variation at low dose rate but remained well within the Group A limits. The positive and negative open-loop gain remained stable but showed considerable variation, which is considered indicative of testing issues for this parameter and not of any effects of 60Co irradiation. The positive and negative power supply rejection ratio and common mode rejection ratio were stable over both tests, as were the positive and negative supply currents. The positive and negative slew rates were stable. No differences in total dose response were noted between biased and grounded irradiation for any parameters. Additionally, no channel to channel differences were noted, either in the pre-irradiation data or in the total dose response of the parts. Variables Data The plots in Figures 3 through 16 show data at all downpoints. The plots show the median of key parameters as a function of low and high dose rate total dose for each of the two irradiation conditions. We chose to plot the median for these parameters due to the relatively small sample size of five or six per experimental cell. All electrical testing was performed outside the irradiator using the production automated test equipment (ATE) with datalogging at each downpoint. Downpoint electrical testing was performed at room temperature. Experimental Matrix Total dose irradiation proceeded in accordance with the guidelines of MIL-STD-883 Test Method 1019.7. The experimental matrix consisted of six samples irradiated at low dose rate under bias, six samples irradiated at low dose rate with all pins grounded, five samples irradiated at high dose rate under bias and five samples irradiated at high dose rate with all pins grounded. Samples of the ISL70417SEH were drawn from preproduction inventory and were packaged in the hermetic 14 Ld solder-sealed flatpack (CDFP4-F14) package. Samples were processed through the standard burnin cycle before irradiation, as required by MIL-STD-883, and were screened to the ATE limits at room temperature prior to the test. Downpoints Downpoints for the low dose rate tests were zero, 50 and 100krad(Si). Downpoints for the high dose rate tests were 0, 50, 100, 150, 200 and 300krad(Si). 2 AN1792.0 January 14, 2013 Application Note 1792 150 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT INPUT OFFSET VOLTAGE (µV) 100 50 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 SPEC LIMIT 0 -50 -100 -150 0 50 100 150 200 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE 250 300 FIGURE 3. ISL70417SEH input offset voltage, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limits are -75µV to +75µV, while the post-irradiation limits are -110µV to +110µV. 6 POSITIVE INPUT BIAS CURRENT (nA) 4 2 0 -2 -4 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 SPEC LIMIT SPEC LIMIT -6 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 4. ISL70417SEH positive input bias current, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limits are -1.0nA to +1.0nA, while the post-irradiation limits are -5.0nA to +5.0nA. 3 AN1792.0 January 14, 2013 Application Note 1792 6 NEGATIVE BIAS CURRENT (nA) 4 2 0 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT -2 -4 -6 0 50 100 150 200 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 SPEC LIMIT 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 5. ISL70417SEH negative input bias current, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limits are -1.0nA to +1.0nA, while the post-irradiation limits are -5.0nA to +5.0nA. 4 INPUT OFFSET CURRENT (nA) 3 2 1 0 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT -1 -2 -3 -4 0 50 100 150 200 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 SPEC LIMIT 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 6. ISL70417SEH input offset current, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limits are -1. 5nA to +1.5nA, while the post-irradiation limits are -3.0nA to +3.0nA. 4 AN1792.0 January 14, 2013 Application Note 1792 120 POSITIVE OPEN-LOOP GAIN (dB) 110 100 90 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT 80 70 60 0 50 100 150 200 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 7. ISL70417SEH positive open-loop voltage gain, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre- and post-irradiation limits are 69.5dB minimum. 120 NEGATIVE OPEN-LOOP GAIN (dB) 110 100 90 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT 80 70 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 60 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 8. ISL70417SEH negative open-loop voltage gain, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre- and post-irradiation limits are 69.5dB minimum. 5 AN1792.0 January 14, 2013 Application Note 1792 POSITIVE POWER SUPPLY REJECTION RATIO (dB) 160 150 140 130 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT 120 110 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 100 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 9. ISL70417SEH positive power supply rejection ratio, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre- and post-irradiation limits are 120.0dB minimum. NEGATIVE POWER SUPPLY REJECTION RATIO (dB) 145 140 135 130 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT 125 120 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 115 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 10. ISL70417SEH negative power supply rejection ratio, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre- and post-irradiation limits are 120.0dB minimum. 6 AN1792.0 January 14, 2013 Application Note 1792 POSITIVE COMMON MODE REJECTION RATIO (dB) 160 150 140 130 120 LDR BIAS CH1 110 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 100 90 SPEC LIMIT 80 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 11. ISL70417SEH positive common mode rejection ratio, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre- and post-irradiation limits are 120.0dB minimum. NEGATIVE COMMON MODE REJECTION RATIO (dB) 160 150 140 130 120 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT 110 100 90 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 80 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 12. ISL70417SEH negative common mode rejection ratio, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre- and post-irradiation limits are 120.0dB minimum. 7 AN1792.0 January 14, 2013 Application Note 1792 3.0 POSITIVE POWER SUPPLY CURRENT (mA) 2.8 2.6 2.4 2.2 2.0 1.8 1.6 LDR BIAS LDR GND 1.4 HDR BIAS 1.2 HDR GND SPEC HI 1.0 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 13. ISL70417SEH positive power supply current, sum of all four channels (1 through 4), as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limit is -2.12mA maximum and the post-irradiation limit is -2.72mA maximum. -1.0 LDR BIAS LDR GND NEGATIVE POWER SUPPLY CURRENT (mA) -1.2 HDR BIAS -1.4 HDR GND SPEC HI -1.6 -1.8 -2.0 -2.2 -2.4 -2.6 -2.8 -3.0 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 14. ISL70417SEH negative power supply current, sum of all four channels (1 through 4), as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limit is -2.12mA maximum and the post-irradiation limit is -2.72mA maximum. 8 AN1792.0 January 14, 2013 Application Note 1792 0.55 0.50 POSITIVE SLEW RATE (V/µs) 0.45 0.40 LDR BIAS CH1 LDR BIAS CH3 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 HDR BIAS CH3 HDR GND CH1 HDR GND CH3 SPEC LIMIT 0.35 0.30 0.25 LDR BIAS CH2 LDR BIAS CH4 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 HDR BIAS CH4 HDR GND CH2 HDR GND CH4 0.20 0.15 0.10 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT LOW AND HIGH DOSE RATE FIGURE 15. ISL70417SEH positive slew rate, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limit is 0.30V/µs minimum and the post-irradiation limit is 0.20V/µs minimum. 0.50 NEGATIVE SLEW RATE (V/µs) 0.45 0.40 LDR BIAS CH1 LDR BIAS CH3 LDR BIAS CH2 LDR BIAS CH4 0.35 LDR GND CH1 LDR GND CH3 HDR BIAS CH1 LDR GND CH2 LDR GND CH4 HDR BIAS CH2 0.30 HDR BIAS CH3 HDR GND CH1 HDR BIAS CH4 HDR GND CH2 0.25 HDR GND CH3 SPEC LIMIT HDR GND CH4 0.20 0.15 0.10 0.05 0 0 50 100 150 200 250 300 TOTAL DOSE (krad(Si)) AT HIGH AND LOW DOSE RATE FIGURE 16. ISL70417SEH negative slew rate, channels 1 through 4, as a function of total dose irradiation at low and high dose rate for the biased (per Figure 2) and unbiased (all pins grounded) cases. The dose rate was 0.01rad(Si)/s for low dose rate irradiation and 50rad(Si)/s for high dose rate irradiation. Sample size for the low dose rate cells was 6, while the sample size for the high dose rate cells was 5. The pre-irradiation limit is 0.30V/µs minimum and the post-irradiation limit is 0.20V/µs minimum. 9 AN1792.0 January 14, 2013 Application Note 1792 Conclusion This document reports results of low and high dose rate testing of the ISL70417SEH quad operational amplifier. Parts were tested at low and high dose rate under biased and unbiased conditions per MIL-STD-883 Test Method 1019.7, at 0.01rad(Si)/s and 50rad(Si)/s respectively. The low dose rate test was run to 150krad(Si) and the high dose rate was run to 300krad(Si). All parameters remained within the post-irradiation limits to the maximum total dose for each test. The positive and negative input bias currents were stable over high dose rate irradiation but showed an increase over low dose rate. The parameter remained within the post-irradiation specification limits, but the part must be considered low dose rate sensitive based on the ‘delta parameter’ diagnostic algorithm outlined in MIL-STD-888 test method 1019. The part is acceptance tested on a wafer by wafer basis to 300krad(Si) at high dose rate (50 – 300rad(Si)/s) and to 50krad(Si) at low dose rate (0.01rad(Si)/s), insuring hardness to the specified level for both dose rates. No significant differences in total dose response were noted between biased and grounded irradiation for any parameters. Additionally, no channel to channel differences were noted, either in the pre-irradiation data or in the total dose response of the parts. Appendices Reported parameters and their post-irradiation limits. TABLE 1. REPORTED PARAMETERS FIGURE PARAMETER LIMIT, LOW LIMIT, HIGH UNITS NOTES 3 Input offset voltage -110 +110 µV Channels 1 through 4 4 Positive input bias current -5.0 +5.0 nA Channels 1 through 4 5 Negative input bias current -5.0 +5.0 nA Channels 1 through 4 6 Input offset current -3.0 +3.0 nA Channels 1 through 4 7 Positive open loop gain, biased 69.5 dB Channels 1 through 4 8 Negative open loop gain, biased 69.5 dB Channels 1 through 4 9 Positive power supply rejection ratio 120 dB Channels 1 through 4 10 Negative power supply rejection ratio 120 dB Channels 1 through 4 11 Positive common mode rejection ratio 120 dB Channels 1 through 4 12 Positive common mode rejection ratio 120 dB Channels 1 through 4 13 Positive supply current 2.72 mA Sum of all 4 channels 14 Negative supply current 2.72 mA Sum of all 4 channels 15 Positive slew rate 0.2 V/µs Channels 1 through 4 16 Negative slew rate 0.2 V/µs Channels 1 through 4 Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you have the latest revision. DATE REVISION January 14, 2013 AN1792.0 CHANGE Initial Release. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the Application Note or Technical Brief is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com 10 AN1792.0 January 14, 2013