Phase Control Thyristor

Date:- 30th April, 2015
Data Sheet Issue:- 3
Phase Control Thyristor
Types N1075LN180
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
1800
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
1900
V
VRRM
Repetitive peak reverse voltage, (note 1)
1800
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
1900
V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
1240
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 2)
880
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 3)
535
A
IT(RMS)M
Nominal RMS on-state current, Tsink=25°C, (note 2)
2415
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
2095
A
ITSM
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
15750
A
ITSM2
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
17500
2
2
A
6
A2s
6
A2s
It
I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
1.24×10
I2 t
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
1.53×10
(di/dt)cr
Critical rate of rise of on-state current (note 6)
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
3
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-60 to +130
°C
Tstg
Storage temperature range
-60 to +130
°C
(continuous, 50Hz)
200
(non-repetitive)
400
A/µs
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, ITM=1600A, IFG=2A, tr≤0.5µs, Tcase=130°C.
Data Sheet. Types N1075LN180 Issue 3
Page 1 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
-
1.40
ITM=1700A
V
VTM
Maximum peak on-state voltage
-
-
2.02
ITM=3700A
V
VT0
Threshold voltage
-
-
0.85
V
rT
Slope resistance
-
-
0.32
mΩ
1000
-
-
(dv/dt)cr Critical rate of rise of off-state voltage
VD=67% VDRM, linear ramp, gate o/c
V/µs
IDRM
Peak off-state current
-
-
100
Rated VDRM
mA
IRRM
Peak reverse current
-
-
100
Rated VRRM
mA
VGT
Gate trigger voltage
-
-
2.5
IGT
Gate trigger current
-
-
250
VGD
Gate non-trigger voltage
-
-
0.25
Rated VDRM
IH
Holding current
-
-
300
Tj=25°C
mA
VD=67% VDRM, IT=800A, di/dt=10A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
Tj=25°C
V
VD=10V, IT=3A
mA
V
tgd
Gate-controlled turn-on delay time
-
-
2.0
Qrr
Recovered charge
-
1230
1400
Qra
Recovered charge, 50% Chord
-
950
-
Irr
Reverse recovery current
-
125
-
trr
Reverse recovery time
-
15
-
-
120
230
-
180
330
-
-
0.033
Double side cooled
K/W
-
-
0.066
Single side cooled
K/W
14
-
16
-
280
-
tq
Turn-off time
RthJK
Thermal resistance, junction to heatsink
F
Mounting force
Wt
Weight
µC
µC
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V
A
µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=10A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
Note 2.
Page 2 of 11
µs
kN
g
Notes:1) Unless otherwise indicated Tj=130°C.
2) For other clamp forces, please consult factory.
Data Sheet. Types N1075LN180 Issue 3
µs
April, 2015
Phase Control Thyristor Types N1075LN180
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VRRM
V
1800
Voltage Grade
18
VDSM VRSM
V
1900
VD VR
DC V
1350
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types N1075LN180 Issue 3
Page 3 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
8.0 Computer Modelling Parameters
8.1 Device Dissipation Calculations
I AV =
WAV =
− VT 0 + VT 0 + 4 ⋅ ff ⋅ rT ⋅ WAV
2 ⋅ ff 2 ⋅ rT
2
2
and:
∆T
Rth
∆T = T j max − TK
Where VT0=0.85V, rT=0.32mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave Double Side Cooled
0.0421
0.0399
0.0383
0.0371
0.0355
0.0339
0.0330
Square wave Anode Side Cooled
0.0746
0.0720
0.0706
0.0696
0.0683
0.0671
0.0660
Sine wave Double Side Cooled
0.0401
0.0377
0.0363
0.0353
0.0331
Sine wave Anode Side Cooled
0.0718
0.0695
0.0685
0.0678
0.0664
Form Factors
Conduction Angle
30°
60°
90°
120°
180°
270°
d.c.
Square wave
3.46
2.45
2
1.73
1.41
1.15
1
Sine wave
3.98
2.78
2.22
1.88
1.57
8.2 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A
0.9375198
B
0.02528723
130°C Coefficients
A
0.6251105
B
0.03458985
C
2.256656×10
-4
C
2.864584×10-4
D
6.086932×10-4
D
7.596821×10-4
Data Sheet. Types N1075LN180 Issue 3
Page 4 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
8.3 D.C. Thermal Impedance Calculation
−t
⎛
τ
rt = ∑ rp ⋅ ⎜1 − e p
⎜
p =1
⎝
⎞
⎟
⎟
⎠
p=n
Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled, junction to heatsink
Term
1
2
3
4
rp
0.01927478
9.908339×10-3
2.009716×10-3
1.605723×10-3
τp
0.8125066
0.07719755
0.02563659
2.774668×10-3
D.C. Single Side Cooled, junction to heatsink
Term
1
2
rp
0.04712205
4.476528×10
τp
4.069636
0.5902552
3
-3
4
8.975167×10
-3
4.849501×10
0.09712090
5
-3
0.02892249
7.67798×10-4
1.401586×10-3
9.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Diagram
1
Diagram 1
150 µs
(ii) Qrr is based on a 150µs integration time i.e.
Qrr =
∫i
rr
.dt
0
(iii)
K Factor =
Data Sheet. Types N1075LN180 Issue 3
t1
t2
Page 5 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
Curves
Figure 1 – On-state characteristics of Limit device
Figure 2 – Transient thermal impedance junction to
heatsink
0.1
10000
N1075LN180
Issue 3
N1075LN180
Issue 3
SSC
0.01
Thermal impedance (K/W)
Instantaneous On-state current - I TM (A)
DSC
1000
Tj = 130°C
0.001
Tj = 25°C
100
0
0.5
1
1.5
2
2.5
0.0001
0.0001
3
0.001
0.01
Instantaneous On-state voltage - VTM (V)
0.1
1
10
100
Time (s)
Figure 3 – Gate Characteristics – Trigger limits
Figure 4 – Gate Characteristics – Power Curves
12
8
N1075LN180
Issue 3
Tj=25°C
7
N1075LN180
Issue 3
Tj=25°C
10
Max VG dc
Max VG dc
Gate Trigger Voltage - VGT (V)
Gate Trigger Voltage - VGT (V)
6
5
4
3
IGT, VGT
8
6
4
PGM Max 30W dc
2
-60°C
25°C
125°C
PG(AV) 4W dc
2
1
Min VG dc
Min VG dc
IGD, VGD
0
0
0
0.2
0.4
0.6
0.8
0
1
Data Sheet. Types N1075LN180 Issue 3
2
4
6
8
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Page 6 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
Figure 5 – Total Recovered Charge, Qrr
Figure 6 – Recovered Charge, Qra (50% chord)
10000
10000
N1075LN180
Issue 3
Tj=130°C
N1075LN180
Issue 3
Recovered charge - Qra, 50% chord (µC)
Tj=130°C
Recovered charge - Qrr (µC)
2000A
1500A
1000A
500A
1000
2000A
1500A
1000A
500A
1000
1
10
100
1000
1
10
di/dt (A/µs)
Figure 7 – Peak Reverse Recovery Current, Irm
1000
Figure 8 – Maximum Recovery Time, trr (50% chord)
1000
100
N1075LN180
Issue 3
N1075LN180
Issue 3
2000A
1500A
1000A
500A
Tj=130°C
Reverse recovery time - trr, 50% chord (µs)
Tj=130°C
Reverse recovery current - Irm (A)
100
di/dt (A/µs)
100
10
2000A
1500A
1000A
500A
1
10
1
10
100
1
1000
Data Sheet. Types N1075LN180 Issue 3
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Page 7 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
Figure 10 – On-state current vs. Case temperature –
Double Side Cooled (Sine wave)
Figure 9 – On-state current vs. Power dissipation –
Double Side Cooled (Sine wave)
3500
150
N1075LN180
Issue 3
N1075LN180
Issue 3
180°
120°
3000
90°
125
60°
Maximum permissable case temperature (°C)
30°
Maximum forward dissipation (W)
2500
2000
1500
1000
100
75
50
25
30°
500
60°
90°
120°
180°
0
0
0
500
1000
1500
0
2000
500
1000
1500
2000
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power dissipation –
Double Side Cooled (Square wave)
Figure 12 – On-state current vs. Case temperature –
Double Side Cooled (Square wave)
3500
150
N1075LN180
Issue 3
N1075LN180
Issue 3
d.c.
270°
180°
3000
125
120°
90°
60°
Maximum permissible case temperature (°C)
30°
Maximum forward dissipation (W)
2500
2000
1500
1000
100
30°
60°
90°
120°
180°
270°
d.c.
75
50
25
500
0
0
0
500
1000
1500
2000
0
2500
Data Sheet. Types N1075LN180 Issue 3
500
1000
1500
2000
2500
Mean Forward Current (A) (Whole Cycle Averaged)
Mean Forward Current (A) (Whole Cycle Averaged)
Page 8 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
Figure 13 – On-state current vs. Power dissipation –
Single Side Cooled (Sine wave)
Figure 14 – On-state current vs. Case temperature –
Single Side Cooled (Sine wave)
1800
150
N1075LN180
Issue 3
N1075LN180
Issue 3
1600
60°
90°
120°
180°
30°
125
Maximum permissable case temperature (°C)
Maximum forward dissipation (W)
1400
1200
1000
800
600
100
75
50
400
25
30°
60°
90°
120°
180°
200
0
0
0
200
400
600
800
1000
0
1200
200
400
600
800
1000
1200
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 15 – On-state current vs. Power dissipation –
Single Side Cooled (Square wave)
Figure 16 – On-state current vs. Case temperature –
Single Side Cooled (Square wave)
1800
150
N1075LN180
Issue 3
N1075LN180
Issue 3
1600
125
Maximum permissible case temperature (°C)
Maximum forward dissipation (W)
1400
1200
d.c.
270°
180°
120°
90°
60°
30°
1000
800
600
100
75
30°
60°
90°
120°
180°
270°
d.c.
50
400
25
200
0
0
0
200
400
600
800
1000
1200
1400
0
Mean Forward Current (A) (Whole Cycle Averaged)
Data Sheet. Types N1075LN180 Issue 3
200
400
600
800
1000
1200
1400
Mean Forward Current (A) (Whole Cycle Averaged)
Page 9 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
Figure 17 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
1000000
1.00E+08
N1075LN180
Issue 3
I t: VRRM ≤10V
2
1.00E+07
100000
2
2
2
I t: 60% VRRM
Maximum I t (A s)
Total peak half sine surge current (A)
Tj (initial) = 130°C
10000
ITSM: VRRM ≤10V
1.00E+06
ITSM: 60% VRRM
1000
1
3
5
10
Duration of surge (ms)
Data Sheet. Types N1075LN180 Issue 3
1
5
10
50 100
1.00E+05
Duration of surge (cycles @ 50Hz)
Page 10 of 11
April, 2015
Phase Control Thyristor Types N1075LN180
Outline Drawing & Ordering Information
101A407
ORDERING INFORMATION
N1075
Fixed
Type Code
(Please quote 10 digit code as below)
LN
18
0
Fixed
outline code
Voltage code
VDRM/100
18
Fixed turn-off
time code
Order code: N1075LN180 – 1800V VDRM, VRRM, 26mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: [email protected]
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: [email protected]
www.ixysuk.com
www.ixys.com
IXYS Long Beach
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: [email protected]
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Types N1075LN180 Issue 3
Page 11 of 11
April, 2015