Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1271NC12x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1200 V VDSM Non-repetitive peak off-state voltage, (note 1) 1200 V VRRM Repetitive peak reverse voltage, (note 1) 1200 V VRSM Non-repetitive peak reverse voltage, (note 1) 1300 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AV) Mean on-state current, Tsink=55°C, (note 2) 1271 A IT(AV) Mean on-state current. Tsink=85°C, (note 2) 821 A IT(AV) Mean on-state current. Tsink=85°C, (note 3) 458 A IT(RMS) Nominal RMS on-state current, Tsink=25°C, (note 2) 2599 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 2050 A ITSM Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) 18.0 kA ITSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) 19.8 2 kA It I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) 1.62×10 A2s I2 t 2 I t capacity for fusing tp=10ms, VRM≤10V, (note 5) 1.96×106 A2s Maximum rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs (di/dt)cr 2 6 VRGM Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 2 W PGM Peak forward gate power 30 W VGD Non-trigger gate voltage, (Note 7) 0.25 V THS Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. 7) Rated VDRM. Data Sheet. Type R1271NC12x Issue 2 Page 1 of 12 August 2012 Distributed gate thyristor R1271NC12x Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.02 VT0 Threshold voltage - - 1.547 V rT Slope resistance - - 0.237 mΩ (dv/dt)cr Critical rate of rise of off-state voltage 200 - - IDRM Peak off-state current - - 150 Rated VDRM IRRM Peak reverse current - - 150 Rated VRRM VGT Gate trigger voltage - - 3.0 Tj=25°C IGT Gate trigger current - - 300 Tj=25°C IH Holding current - - 1000 Tj=25°C tgd Gate controlled turn-on delay time - 0.5 1.0 tgt Turn-on time - 1.0 2.0 Qrr Recovered charge - 200 - Qra Recovered charge, 50% Chord - 120 150 Irm Reverse recovery current - 85 - trr Reverse recovery time, 50% chord - 2.0 - - - tq Turn-off time (note 2) 12 - - - ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs ITM=1000A, tp=1000µs, di/dt=60A/µs, 25 Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs 0.024 Double side cooled - - 0.048 Single side cooled 19 - 26 kN - 510 - g RthJK Thermal resistance, junction to heatsink F Mounting force Wt Weight ITM=2000A V VD=80% VDRM, Linear ramp V/µs mA V VD=10V, IT=2A mA mA VD=67%VDRM, ITM=2000A, di/dt=60A/µs, IFG=2A, tr≤0.5µs, Tcase=25°C µs µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V µC A µs 22 µs K/W Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for details of tq codes. Data Sheet. Type R1271NC12x Issue 2 Page 2 of 12 August 2012 Distributed gate thyristor R1271NC12x Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 12 VDRM VDSM VRRM V 1200 VRSM V 1300 VD VR DC V 810 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500A/µs. 8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 9.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv Data Sheet. Type R1271NC12x Issue 2 Page 3 of 12 August 2012 Distributed gate thyristor R1271NC12x 10.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink) and TSINK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) ) 11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below. Fig. 1 (ii) Qrr is based on a 150µs integration time. 150 µs i.e. Qrr = ∫i rr .dt 0 (iii) K Factor = t1 t2 12.0 Reverse Recovery Loss 12.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TSINK ( new ) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) ) where k = 0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s) f = Rated frequency (in Hz) at the original heat sink temperature Rth(J-Hs) = D.C. thermal resistance (°C/W) Data Sheet. Type R1271NC12x Issue 2 Page 4 of 12 August 2012 Distributed gate thyristor R1271NC12x The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 12.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f ) Where TSINK (new) is the required maximum heat sink temperature and TSINK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Where: Vr = Commutating source voltage CS = Snubber capacitance R = Snubber resistance 13.0 Gate Drive The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than 0.5µs. This gate drive must be applied when using the full di/dt capability of the device. The duration of pulse may need to be configured with respect to the application but should be no shorter than 20µs, otherwise an increase in pulse current could be needed to supply the necessary charge to trigger the device. Data Sheet. Type R1271NC12x Issue 2 Page 5 of 12 August 2012 Distributed gate thyristor R1271NC12x 14.0 Computer Modelling Parameters 14.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs. VT, on page 7 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot characteristics where possible. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 125°C Coefficients A 1.520747638 B 8.42314×10-3 C 2.47082×10-4 D -1.30505×10-3 14.2 D.C. Thermal Impedance Calculation −t ⎛ τ rt = ∑ rp ⋅ ⎜1 − e p ⎜ p =1 ⎝ ⎞ ⎟ ⎟ ⎠ p=n Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Double Side Cooled Term 1 2 3 rp 0.01249139 6.316833×10 τp 0.8840810 0.1215195 -3 4 1.850855×10 -3 5 -3 6.135330×10-4 6.742908×10-3 1.326292×10-3 1.922045×10 0.03400152 D.C. Single Side Cooled Term 1 rp 0.02919832 τp 6.298105 Data Sheet. Type R1271NC12x Issue 2 2 4.863568×10- 3 3 3.744798×10-3 3.286174 0.5359179 Page 6 of 12 4 6.818034×10- 5 2.183558×10- 6 3 3 1.848294×10-3 0.1186897 0.02404574 3.379476×10-3 August 2012 Distributed gate thyristor R1271NC12x Curves Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance 10000 0.1 SSC 0.048K/W Tj = 125°C DSC 0.024K/W Transient Thermal Impedance - Z(th)t (K/W) Instantaneous on-state current - IT (A) 0.01 1000 0.001 0.0001 R1271NS10x-12x R1271NC12x Issue Issue2 1 R1271NC12x R1271NS10x-12x Issue Issue21 100 0 1 2 3 0.00001 0.0001 4 Instantaneous on-state voltage - VT (V) 0.001 0.01 0.1 1 10 100 Time (s) Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves 20 6 R1271NC12x R1271NS10x-12x Issue12 Issue R1271NC12x R1271NS10x-12x Issue 12 Issue Tj=25°C Tj=25°C 18 5 16 Gate Trigger Voltage - VGT (V) Gate Trigger Voltage - VGT (V) 14 Max VG dc 4 IGT, VGT 3 2 Max VG dc 12 10 8 PG Max 30W dc -40°C -10°C 125°C 25°C 6 4 1 PG 2W dc Min VG dc 2 IGD, VGD Min VG dc 0 0 0 0.25 0.5 0.75 0 1 Data Sheet. Type R1271NC12x Issue 2 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 August 2012 Distributed gate thyristor R1271NC12x Figure 6 - Recovered charge, Qra (50% chord) Figure 5 - Total recovered charge, Qrr 1000 10000 Recovered charge - Qra (µC) Total recovered charge - Qrr (µC) 2000A 1500A 1000A 500A 2000A 1500A 1000A 500A 1000 100 Tj = 125°C Tj = 125°C R1271NS10x-12x R1271NC12x Issue 21 R1271NS10x-12x R1271NC12x Issue Issue 21 100 10 10 100 1000 10 Commutation rate - di/dt (A/µs) 100 1000 Commutation rate - di/dt (A/µs) Figure 7 - Peak reverse recovery current, Irm Figure 8 - Maximum recovery time, trr (50% chord) 1000 10 Reverse recovery time - trr (µs) Total recovered charge - Qrr (µC) 2000A 1500A 1000A 500A 100 2000A 1500A 1000A 500A Tj = 125°C Tj = 125°C R1271NS10x-12x R1271NC12x Issue 12 Issue R1271NS10x-12x R1271NC12x Issue21 Issue 10 1 10 100 1000 10 Commutation rate - di/dt (A/µs) Data Sheet. Type R1271NC12x Issue 2 100 1000 Commutation rate - di/dt (A/µs) Page 8 of 12 August 2012 Distributed gate thyristor R1271NC12x Figure 9 - Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse 1.00E+02 1 R1271NC12x R1271NS10x-12x Issue Issue 21 Tj=125°C 1.00E+01 5kA 1000A Energy per pulse (J) Energy per pulse - Er (J) 2000A 500A 0.1 250A 1.00E+00 3kA 2kA 1.00E-01 1kA 500A Snubber: 0.25µF,5Ω 1.00E-02 250A Tj = 125°C Vrm = 67% VRRM R1271NC12x R1271NS10x-12x Issue Issue21 1.00E-03 1.00E-05 0.01 10 100 Commutation rate - di/dt (A/µs) 1000 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings 1.00E+05 1.00E+05 R1271NC12x R1271NS10x-12x Issue Issue2 1 500A THs=55°C 500A 100% Duty Cycle 100% Duty Cycle 1kA 1.00E+04 1kA 1.00E+04 2kA 2kA Frequency (Hz) Frequency (Hz) 1.00E+03 3kA 1.00E+03 5kA 3kA 5kA 1.00E+02 1.00E+02 1.00E+01 THs=85°C R1271NC12x R1271NS10x-12x Issue 12 Issue 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 Data Sheet. Type R1271NC12x Issue 2 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Pulse Width (s) Page 9 of 12 August 2012 Distributed gate thyristor R1271NC12x Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings 1.00E+05 1.00E+05 500A 500A 1kA 100% Duty Cycle 100% Duty Cycle 1.00E+04 1.00E+04 1kA 2kA 3kA 2kA 1.00E+03 1.00E+03 Frequency (Hz) Frequency (Hz) 5kA 3kA 5kA 1.00E+02 1.00E+02 1.00E+01 1.00E+01 THs=55°C THs=55°C di/dt=500A/µs di/dt=100A/µs R1271NC12x R1271NS10x-12x Issue Issue 21 1.00E+00 1.00E-05 R1271NS10x-12x R1271NC12x Issue Issue 12 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings 1.00E+05 1.00E+05 250A 500A 1.00E+04 100% Duty Cycle 100% Duty Cycle 500A 1kA 1.00E+04 1kA 2kA Frequency (Hz) Frequency (Hz) 1.00E+03 3kA 1.00E+03 5kA 2kA 3kA 5kA 1.00E+02 1.00E+02 1.00E+01 THs=85°C THs=85°C di/dt=100A/µs R1271NC12x R1271NS10x-12x Issue12 Issue di/dt=500A/µs R1271NS10x-12x R1271NC12x Issue Issue 12 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Pulse width (s) Data Sheet. Type R1271NC12x Issue 2 1.00E+00 1.00E-05 Page 10 of 12 August 2012 Distributed gate thyristor R1271NC12x Figure 17 - Square wave energy per pulse 1.00E+03 Figure 18 - Square wave energy per pulse 1.00E+03 R1271NS10x-12x R1271NC12x Issue Issue21 di/dt=100A/µs di/dt=500A/µs Tj=125°C Tj=125°C 1.00E+02 1.00E+02 1.00E+01 Energy per pulse (J) Energy per pulse (J) R1271NC12x R1271NS10x-12x Issue 12 Issue 5kA 3kA 1.00E+00 5kA 3kA 2kA 1.00E+01 1.00E+00 2kA 1kA 1.00E-01 1.00E-01 1kA 500A 250A 500A 250A 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 19 - Maximum surge and I2t Ratings Gate may temporarily lose control of conduction angle 1.00E+08 I2t: VRRM≤10V I2t: 60% VRRM 1.00E+07 10000 ITSM: VRRM≤10V ITSM: 60% VRRM 1.00E+06 Maximum I2t (A2s) Total peak half sine surge current - ITSM (A) 100000 Tj (initial) = 125°C R1271NC12x R1271NS10x-12x Issue Issue 21 1.00E+05 1000 1 3 5 10 Duration of surge (ms) Data Sheet. Type R1271NC12x Issue 2 1 5 10 50 100 Duration of surge (cycles @ 50Hz) Page 11 of 12 August 2012 Distributed gate thyristor R1271NC12x Outline Drawing & Ordering Information 101A223 ORDERING INFORMATION (Please quote 10 digit code as below) ♦♦ R1271 NC Fixed Type Code Fixed Outline Code ♦ Off-state Voltage Code VDRM/100 12 Typical order code: R1271NC12D – 1200V VDRM, 20µs tq, 27.7mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] tq Code (@ 200V/µs) B=12µs, C=15µs, D=20µs, E=25µs IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type R1271NC12x Issue 2 Page 12 of 12 August 2012

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