Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1158NC26x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 2600 V VDSM Non-repetitive peak off-state voltage, (note 1) 2600 V VRRM Repetitive peak reverse voltage, (note 1) 2600 V VRSM Non-repetitive peak reverse voltage, (note 1) 2700 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AVM) Maximum average on-state current, Tsink=55°C, (note 2) 1158 A IT(AVM) Maximum average on-state current. Tsink=85°C, (note 2) 769 A IT(AVM) Maximum average on-state current. Tsink=85°C, (note 3) 445 A IT(RMS) Nominal RMS on-state current, Tsink=25°C, (note 2) 2328 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 1920 A ITSM Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5) 14.5 kA ITSM2 Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5) 16.0 2 2 kA 6 A2s 6 It I t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5) 1.05×10 I2 t I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5) 1.28×10 A2s Critical rate of rise of on-state current (repetitive), (Note 6) 1000 A/µs Critical rate of rise of on-state current (non-repetitive), (Note 6) 1500 A/µs 5 V (di/dt)cr VRGM Peak reverse gate voltage PG(AV) Mean forward gate power 5 W PGM Peak forward gate power 30 W Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. Data Sheet. Type R1158NC26x Issue 2 Page 1 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.40 ITM=2000A V VTM Maximum peak on-state voltage - - 2.95 ITM=3500A V VT0 Threshold voltage - - 1.60 V rT Slope resistance - - 0.40 mΩ 200 - - (dv/dt)cr Critical rate of rise of off-state voltage VD=80% VDRM, Linear ramp, Gate o/c V/µs IDRM Peak off-state current - - 100 Rated VDRM mA IRRM Peak reverse current - - 100 Rated VRRM mA VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 300 VGD Gate non-trigger voltage - - 0.25 Rated VDRM IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time - 0.7 1.5 tgt Turn-on time - 1.5 3.0 VD=67% VDRM, ITM=1000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 1600 - Qra Recovered charge, 50% Chord - 900 1000 Irm Reverse recovery current - 240 - trr Reverse recovery time - 7.5 - - - 100 100 - 200 - - 0.022 Double side cooled K/W - - 0.044 Single side cooled K/W 19 - 26 kN - 510 - g tq Turn-off time (note 2) RthJK Thermal resistance, junction to heatsink F Mounting force Wt Weight Tj=25°C V VD=10V, IT=3A mA V µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V Page 2 of 12 A µs ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for details of tq codes. Data Sheet. Type R1158NC26x Issue 2 µC August 2012 µs Distributed Gate Thyristor Type R1158NC26x Notes on Ratings and Characteristics 1.0 Voltage Grade Table VDRM VDSM VRRM V 2600 Voltage Grade 26 VRSM V 2700 VD VR DC V 1550 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 7.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 8.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Data Sheet. Type R1158NC26x Issue 2 Page 3 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x 9.0 Frequency Ratings The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings shown on page 1. 10.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 11.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 12.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv 13.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink) and TSINK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) ) 14.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1 150 µs (ii) Qrr is based on a 150µs integration time i.e. Qrr = ∫i rr .dt 0 (iii) Data Sheet. Type R1158NC26x Issue 2 K Factor = Page 4 of 12 t1 t2 August 2012 Distributed Gate Thyristor Type R1158NC26x 15.0 Reverse Recovery Loss 15.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TSINK ( new ) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) ) Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. Rth(J-Hs) = d.c. thermal resistance (°C/W). The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 15.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f ) Where TSINK (new) is the required maximum heat sink temperature and TSINK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Data Sheet. Type R1158NC26x Issue 2 Where: Vr CS R = Commutating source voltage = Snubber capacitance = Snubber resistance Page 5 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x 16.0 Computer Modelling Parameters 16.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs VT, on page 7 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients A 4.53492257 B -0.6479015 C -1.7639699×10 D 0.073346574 125°C Coefficients -4 A 2.756692 B -0.2606278 C 2.0383540×10-4 D 0.02720498 16.2 D.C. Thermal Impedance Calculation −t ⎛ τ rt = ∑ rp ⋅ ⎜1 − e p ⎜ p =1 ⎝ p=n ⎞ ⎟ ⎟ ⎠ Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Single Side Cooled Term 1 2 3 rp 0.0291698 4.295845×10 τp 5.67822 1.123602 -3 4 7.57109×10 -3 0.1407857 2.195801×10 5 -3 0.014381914 1.628753×10-3 1.272749×10-3 D.C. Double Side Cooled Term 1 2 3 rp 0.01177146 6.485814×10 τp 0.9495346 0.1337950 Data Sheet. Type R1158NC26x Issue 2 -3 Page 6 of 12 2.471007×10 0.01636628 4 -3 1.607109×10-3 1.255571×10-3 August 2012 Distributed Gate Thyristor Type R1158NC26x Curves Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance 10000 0.1 R1158NC26x Issue 2 R1158NC26x Issue 2 Tj = 25°C Tj = 125°C SSC 0.044K/W Transient Thermal Impedance - Z(th)t (K/W) Instantaneous on-state current - IT (A) DSC 0.022K/W 1000 100 1 2 3 4 0.01 0.001 0.0001 0.0001 5 0.001 0.01 0.1 Instantaneous on-state voltage - VT (V) 1 10 100 Time (s) Figure 3 - Gate characteristics - Trigger limits ` Figure 4 - Gate characteristics - Power curves 16 6 R1158NC26x Issue 2 R1158NC26x Issue 2 Tj=25°C Tj=25°C 14 5 Max VG dc Gate Trigger Voltage - VGT (V) Max VG dc 4 IGT, VGT 3 10 8 6 PG Max 30W dc -40°C 25°C -10°C 2 125°C Gate Trigger Voltage - VGT (V) 12 4 PG 5W dc 1 Min VG dc 2 IGD, VGD Min VG dc 0 0 0 0.25 0.5 0.75 0 1 Data Sheet. Type R1158NC26x Issue 2 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x Figure 5 - Total recovered charge, Qrr Figure 6 - Recovered charge, Qra (50% chord) 10000 10000 R1158NC26x Issue 2 R1158NC26x Issue 2 Tj = 125°C Recovered charge - Qra (µC) Total recovered charge - Qrr (µC) Tj = 125°C 2000A 1500A 1000A 2000A 1500A 1000A 500A 1000 500A 1000 100 10 100 1000 10 Commutation rate - di/dt (A/µs) 100 Figure 7 - Peak reverse recovery current, Irm Figure 8 - Maximum recovery time, trr (50% chord) 100 1000 R1158NC26x Issue 2 2000A 1500A 1000A 500A Tj = 125°C Reverse recovery time - trr (µs) Reverse recovery current - rIm (A) 1000 Commutation rate - di/dt (A/µs) 100 10 2000A 1500A 1000A 500A Tj = 125°C R1158NC26x Issue 2 1 10 10 100 10 1000 Data Sheet. Type R1158NC26x Issue 2 100 1000 Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Page 8 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse 10000 1.00E+03 R1158NC26x Issue 2 R1158NC26x Issue 2 Tj=125°C Tj = 125°C Snubber: 0.5µF, 12Ω Vrm = 67% VRRM 1.00E+02 2000A Energy per pulse (J) Energy per pulse - Er (mJ) 1500A 1000A 1000 500A 8kA 1.00E+01 6kA 4kA 1.00E+00 2kA 1kA 1.00E-01 500A R1158NC26x Issue 2 1.00E-02 1.00E-05 100 10 100 1000 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Commutation rate - di/dt (A/µs) Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings 1.00E+05 1.00E+05 R1158NC26x Issue 2 R1158NC26x Issue 2 TK=55°C TK=85°C 500A 1.00E+04 100% Duty Cycle 500A 100% Duty Cycle 1.00E+04 1kA 2kA Frequency (Hz) Frequency (Hz) 1kA 1.00E+03 1.00E+03 4kA 4kA 1.00E+02 2kA 6kA 6kA 1.00E+02 8kA 8kA 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Pulse Width (s) Data Sheet. Type R1158NC26x Issue 2 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 9 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings 1.00E+05 1.00E+05 R1158NC26x Issue 2 500A 1.00E+04 R1158NC26x Issue 2 di/dt=100A/µs di/dt=500A/µs TK=55°C TK=55°C 100% Duty Cycle 500A 1kA 1.00E+04 100% Duty Cycle 1kA Frequency (Hz) Frequency (Hz) 2kA 1.00E+03 4kA 1.00E+03 2kA 6kA 1.00E+02 1.00E+02 8kA 4kA 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 6kA 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings 1.00E+05 1.00E+05 R1158NC26x Issue 2 R1158NC26x Issue 2 di/dt=100A/µs di/dt=500A/µs THs=85°C THs=85°C 100% Duty Cycle 1.00E+04 100% Duty Cycle 1kA 1kA 1.00E+04 2kA 2kA Frequency (Hz) Frequency (Hz) 1.00E+03 4kA 1.00E+03 1.00E+02 4kA 6kA 1.00E+02 1.00E+01 8kA 1.00E+01 1.00E-05 1.00E-04 6kA 1.00E-03 1.00E-02 Pulse width (s) Data Sheet. Type R1158NC26x Issue 2 1.00E+00 1.00E-05 1.00E-04 8kA 1.00E-03 1.00E-02 Pulse width (s) Page 10 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse 1.00E+03 1.00E+03 R1158NC26x Issue 2 R1158NC26x Issue 2 di/dt=100A/µs di/dt=500A/µs Tj=125°C Tj=125°C 1.00E+02 1.00E+02 8kA 6kA 4kA Energy per pulse (J) Energy per pulse (J) 8kA 1.00E+01 6kA 4kA 2kA 1.00E+00 1.00E+01 1kA 2kA 1kA 500A 1.00E+00 1.00E-01 500A 250A 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-01 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 19 - Maximum surge and I2t Ratings Gate may temporarily lose control of conduction angle 100000 1.00E+07 I2t: VRRM≤10V I2t: 60% VRRM Tj (initial) = 125°C 10000 1.00E+06 ITSM: VRRM≤10V Maximum I2t (A2s) Total peak half sine surge current - ITSM (A) R1158NC26x Issue 2 ITSM: 60% VRRM 1000 1.00E+05 1 3 5 10 Duration of surge (ms) Data Sheet. Type R1158NC26x Issue 2 1 5 10 50 100 Duration of surge (cycles @ 50Hz) Page 11 of 12 August 2012 Distributed Gate Thyristor Type R1158NC26x Outline Drawing & Ordering Information 101A223 ORDERING INFORMATION (Please quote 10 digit code as below) R1158 NC ♦♦ x Fixed Type Code Fixed Outline Code Fixed Voltage Code VDRM/100 26 tq Code N=100µs, P=120µs, T=200µs Typical order code: R1158NC26P – 2600V VDRM, 120µs tq, 27.7mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type R1158NC26x Issue 2 Page 12 of 12 August 2012

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