WESTCODE An Date:- 30 Jun, 2008 Data Sheet Issue:- 1 IXYS Company Distributed Gate Thyristor Types R0472YS12# to R0472YS16# (Old Type Number: R210SH16H1R) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1200 -1600 V VDSM Non-repetitive peak off-state voltage, (note 1) 1200 -1600 V VRRM Repetitive peak reverse voltage, (note 1) 1200 -1600 V VRSM Non-repetitive peak reverse voltage, (note 1) 1300 - 1700 V OTHER RATINGS MAXIMUM LIMITS UNITS IT(AV)M Maximum average on-state current, Tsink=55°C, (note 2) 472 A IT(AV)M Maximum average on-state current. Tsink=85°C, (note 2) 316 A IT(AV)M Maximum average on-state current. Tsink=85°C, (note 3) 185 A IT(RMS) Nominal RMS on-state current, Tsink=25°C, (note 2) 945 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 789 A ITSM Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5) 4300 A ITSM2 Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5) 4700 2 I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5) 2 I t capacity for fusing tp=10ms, Vrm≤10V, (note 5) It It (di/dt)cr A 2 3 92.5×10 2 110.5×10 3 2 As 2 As Critical rate of rise of on-state current (repetitive), (Note 6) 500 A/µs Critical rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs 5 V VRGM Peak reverse gate voltage PG(AV) Mean forward gate power 2 W PGM Peak forward gate power 30 W Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 Page 1 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.80 ITM=1000A V VTM Maximum peak on-state voltage - - 3.24 ITM=1416A V VT0 Threshold voltage - - 1.648 V rT Slope resistance - - 1.125 mΩ 200 - - (dv/dt)cr Critical rate of rise of off-state voltage VD=80% VDRM, Linear ramp, Gate o/c V/µs IDRM Peak off-state current - - 60 Rated VDRM mA IRRM Peak reverse current - - 60 Rated VRRM mA VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 200 VGD Gate non-trigger voltage - - 0.25 Rated VDRM IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time - 0.4 1.0 tgt Turn-on time - 1.0 2.0 VD=67% VDRM, ITM=2000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 155 175 Qra Recovered charge, 50% Chord - 70 - Irm Reverse recovery current - 60 - trr Reverse recovery time, 50% Chord - 2.5 - 20 - 40 25 - 50 - - 0.05 Double side cooled K/W - - 0.10 Single side cooled K/W tq Turn-off time (note 2) Tj=25°C V VD=10V, IT=3A mA V µC ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V µC A µs ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs µs RthJK Thermal resistance, junction to heatsink F Mounting force 5 - 9 kN Wt Weight - 90 - kg Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for details of tq codes. Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 Page 2 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Notes on Ratings and Characteristics 1.0 Voltage Grade Table VDRM VDSM VRRM V 1200 1400 1600 Voltage Grade 1200 1400 1600 VRSM V 1300 1500 1700 VD VR DC V 810 930 1020 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 7.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 8.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 Page 3 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# 9.0 Frequency Ratings The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings shown on page 1. 10.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 11.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 12.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv 13.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let Rth(JK) be the steady-state d.c. thermal resistance (junction to sink) and TK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TK (max .) = 125 − (W AV ⋅ Rth ( JK ) ) 14.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1 150 µs (ii) Qrr is based on a 150µs integration time i.e. Qrr = ∫i rr .dt 0 Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 Page 4 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# (iii) K Factor = t1 t2 15.0 Reverse Recovery Loss 15.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TK ( new ) = TK ( original ) − E ⋅ (k + f ⋅ Rth ( JK ) ) Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. Rth(JK) = d.c. thermal resistance (°C/W). The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 15.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TK (new ) = TK (original ) − (E ⋅ Rth ⋅ f ) Where TK (new) is the required maximum heat sink temperature and TK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Where: Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 Vr CS R = Commutating source voltage = Snubber capacitance = Snubber resistance Page 5 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# 16.0 Computer Modelling Parameters 16.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs VT, on page 7 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients 125°C Coefficients A -0.04923298 A 5.22761 B 0.9418825 B -1.056685 -3 -4 C 2.513442 e C -5.150569 e D -0.1889025 D 0.1703342 16.2 D.C. Thermal Impedance Calculation −t τ rt = ∑ rp ⋅ 1 − e p p =1 p=n Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Double Side Cooled Term 1 2 rp 0.0200056 9.923438×10 τp 0.3391689 0.1269073 3 4 0.01433715 4.284403×10 -3 0.03562131 2.562946×10 -3 -3 D.C. Single Side Cooled Term 1 2 rp 0.06157697 8.431182×10 τp 2.136132 1.212898 Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 -3 3 4 5 0.01031315 0.01613806 5.181088×10 -3 0.1512408 0.04244 2.889595×10 -3 Page 6 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Curves Figure 1 - On-state characteristics of Limit device 10000 Figure 2 - Transient thermal impedance 1 R0472YS12# -16# AD Issue 1 R0472YS12# -16# AD Issue 1 SSC 0.1K/W Transient Thermal Impedance - Zth, (k/W) Instantaneous on-state current - IT (A) 0.1 125°C 1000 25°C DSC 0.05K/W 0.01 0.001 100 0 1 2 3 0.0001 0.000001 4 0.0001 0.01 Instantaneous on-state voltage - VT (V) Figure 3 - Gate characteristics - Trigger limits 8 1 100 Time (s) Figure 4 - Gate characteristics - Power curves 20 R0472YS12# -16# AD Issue 1 Tj=25°C R0472YS12# -16# AD Issue 1 Tj=25°C 18 7 Max VG dc 16 6 Max VG dc Gate Trigger Voltage - VGT (V) Gate Trigger Voltage - VGT (V) 14 5 4 IGT, VGT 3 12 10 8 PG Max 30W dc 6 4 -40°C -10°C 25°C 125°C 2 1 PG 2W dc 2 Min VG dc IGD, VGD Min VG 0 0 0 0.1 0.2 0.3 0.4 0.5 0 0.6 Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Figure 5 - Total recovered charge, Qrr 1000 Figure 6 - Recovered charge, Qra (50% chord) 1000 R0472YS12# -16# AD Issue 1 R0472YS12# -16# AD Issue 1 Tj = 125°C 2000A 1000A 550A 200A Recovered charge - Qra (µC) Total recovered charge - Qrr (µC) Tj = 125°C 100 2000A 1000A 550A 200A 100 10 10 1 10 100 1 1000 Figure 7 - Peak reverse recovery current, Irm 1000 R0472YS12# -16# AD Issue 1 R0472YS12# -16# AD Issue 1 Tj = 125°C Tj = 125°C 2000A 1000A 550A 200A Reverse recovery time - trr (µs) Reverse recovery current - IRM (A) 100 Figure 8 - Maximum recovery time, trr (50% chord) 10 1000 10 Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) 100 2000A 1000A 550A 200A 1 10 1 10 100 1 1000 Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 10 100 1000 Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Page 8 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Figure 9 – Reverse recovery energy per pulse 1000 Figure 10 - Sine wave energy per pulse 1.00E+02 R0472YS12# -16# AD Issue 1 Tj = 125°C Vrm ≤ 400V R0472YS12# -16# AD Issue 1 Tj=125°C 2000A 1000A 550A 200A 1.00E+01 Energy per pulse (J) Energy per pulse - Er (J) 100 3kA 1.00E+00 2kA 1kA 10 1.00E-01 550A 200A 1.00E-02 1.00E-05 1 1 10 100 1000 1.00E-04 Figure 11 – Square wave energy per pulse 1.00E+03 1.00E-03 1.00E-02 Pulse width (s) Commutation rate - di/dt (A/µs) Figure 12 - Square wave energy per pulse 1.00E+03 R0472YS12# -16# AD Issue 1 R0472YS12# -16# AD Issue 1 di/dt=100A/µs di/dt=500A/µs Tj=125°C Tj=125°C 1.00E+02 1.00E+02 1.00E+01 Energy per pulse (J) Energy per pulse (J) 3kA 2kA 3kA 2kA 1.00E+00 1.00E+01 1.00E+00 1kA 1.00E-01 1kA 550A 200A 1.00E-01 550A 200A 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-02 Pulse width (s) Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 9 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Figure 13 - Sine wave frequency ratings 1.00E+05 Figure 14 - Sine wave frequency ratings 1.00E+05 R0472YS12# -16# AD Issue 1 Tk=85°C Tk=55°C 200A R0472YS12# -16# AD Issue 1 200A 100% Duty Cycle 1.00E+04 550A 1.00E+04 550A 100% Duty Cycle 1kA 1kA 1.00E+03 Frequency (Hz) Frequency (Hz) 1.00E+03 2kA 3kA 2kA 3kA 1.00E+02 1.00E+02 1.00E+01 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 Figure 15 - Square wave frequency ratings 1.00E+05 1.00E+05 di/dt=100A/µs Tk=55°C 550A 1.00E-03 1.00E-02 Figure 16 - Square wave frequency ratings R0472YS12# -16# AD Issue 1 200A 1.00E-04 Pulse width (s) Pulse Width (s) R0472YS12# -16# AD Issue 1 di/dt=500A/µs Tk=55°C 200A 100% Duty Cycle 1.00E+04 1.00E+04 550A 1kA 100% Duty Cycle 1kA 2kA 1.00E+03 3kA 1.00E+02 3kA 1.00E+02 1.00E+01 1.00E+00 1.00E-05 2kA Frequency (Hz) Frequency (Hz) 1.00E+03 1.00E+01 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 1.00E+00 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 10 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Figure 17 - Square wave frequency ratings 1.00E+05 1.00E+05 R0472YS12# -16# AD Issue 1 200A 1.00E+04 Figure 18 - Square wave frequency ratings R0472YS12# -16# AD Issue 1 di/dt=100A/µs di/dt=500A/µs Tk=85°C Tk=85°C 100% Duty Cycle 1.00E+04 200A 100% Duty Cycle 550A 550A 1.00E+03 Frequency (Hz) Frequency (Hz) 1kA 1.00E+03 2kA 1kA 1.00E+02 2kA 3kA 3kA 1.00E+02 1.00E+01 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Pulse width (s) 2 Figure 19 - Maximum surge and I t Ratings Gate may temporarily lose control of conduction angle 1.00E+06 R0472YS12# -16# AD Issue 1 I2t: VRRM≤10V I2t: 60% VRRM 2 2 Tj (initial) = 125°C Maximum I t (A s) Total peak half sine surge current - I TSM (A) 100000 10000 1.00E+05 ITSM: VRRM≤10V ITSM: 60% VRRM 1000 1 3 5 10 Duration of surge (ms) Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 1 5 10 50 100 1.00E+04 Duration of surge (cycles @ 50Hz) Page 11 of 12 June, 2008 WESTCODE An IXYS Company Distributed Gate Thyristor types R0472YS12# to R0472YS16# Outline Drawing & Ordering Information 101A335 ORDERING INFORMATION (Please quote 10 digit code as below) R0472 YS ♦♦ # Fixed Type Code Fixed Outline Code Voltage Code VDRM/100 12, 14, 16 tq Codes E=25µs, F=30µs, H=40µs, J=50µs Typical order code: R0472YS16J – 1600V VRRM/VDRM, 50µs tq, 15.1mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] WESTCODE An IXYS Company IXYS Corporation 1590 Buckeye Drive Milpitas CA95035-7418 USA Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] www.westcode.com www.ixys.com Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected],com Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1 Page 12 of 12 June, 2008

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