WESTCODE - IXYS Corporation

WESTCODE
An
Date:- 30 Jun, 2008
Data Sheet Issue:- 1
IXYS Company
Distributed Gate Thyristor
Types R0472YS12# to R0472YS16#
(Old Type Number: R210SH16H1R)
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
1200 -1600
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
1200 -1600
V
VRRM
Repetitive peak reverse voltage, (note 1)
1200 -1600
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
1300 - 1700
V
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
472
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 2)
316
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 3)
185
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
945
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
789
A
ITSM
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
4300
A
ITSM2
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
4700
2
I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
2
I t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
It
It
(di/dt)cr
A
2
3
92.5×10
2
110.5×10
3
2
As
2
As
Critical rate of rise of on-state current (repetitive), (Note 6)
500
A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6)
1000
A/µs
5
V
VRGM
Peak reverse gate voltage
PG(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 1 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
-
2.80
ITM=1000A
V
VTM
Maximum peak on-state voltage
-
-
3.24
ITM=1416A
V
VT0
Threshold voltage
-
-
1.648
V
rT
Slope resistance
-
-
1.125
mΩ
200
-
-
(dv/dt)cr Critical rate of rise of off-state voltage
VD=80% VDRM, Linear ramp, Gate o/c
V/µs
IDRM
Peak off-state current
-
-
60
Rated VDRM
mA
IRRM
Peak reverse current
-
-
60
Rated VRRM
mA
VGT
Gate trigger voltage
-
-
3.0
IGT
Gate trigger current
-
-
200
VGD
Gate non-trigger voltage
-
-
0.25
Rated VDRM
IH
Holding current
-
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.4
1.0
tgt
Turn-on time
-
1.0
2.0
VD=67% VDRM, ITM=2000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
Qrr
Recovered charge
-
155
175
Qra
Recovered charge, 50% Chord
-
70
-
Irm
Reverse recovery current
-
60
-
trr
Reverse recovery time, 50% Chord
-
2.5
-
20
-
40
25
-
50
-
-
0.05
Double side cooled
K/W
-
-
0.10
Single side cooled
K/W
tq
Turn-off time (note 2)
Tj=25°C
V
VD=10V, IT=3A
mA
V
µC
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
µC
A
µs
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
RthJK
Thermal resistance, junction to heatsink
F
Mounting force
5
-
9
kN
Wt
Weight
-
90
-
kg
Notes:1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 2 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
V
1200
1400
1600
Voltage Grade
1200
1400
1600
VRSM
V
1300
1500
1700
VD VR
DC V
810
930
1020
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 3 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f
max
=
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(JK) be the steady-state d.c. thermal resistance (junction to sink)
and TK be the heat sink temperature.
Then the average dissipation will be:
W AV = E P ⋅ f and TK (max .) = 125 − (W AV ⋅ Rth ( JK ) )
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
150 µs
(ii) Qrr is based on a 150µs integration time i.e.
Qrr =
∫i
rr
.dt
0
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 4 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
(iii)
K Factor =
t1
t2
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
TK ( new ) = TK ( original ) − E ⋅ (k + f ⋅ Rth ( JK ) )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(JK) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TK (new ) = TK (original ) − (E ⋅ Rth ⋅ f )
Where TK (new) is the required maximum heat sink temperature and
TK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 ⋅
Vr
CS ⋅ di dt
Where:
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Vr
CS
R
= Commutating source voltage
= Snubber capacitance
= Snubber resistance
Page 5 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
-0.04923298
A
5.22761
B
0.9418825
B
-1.056685
-3
-4
C
2.513442 e
C
-5.150569 e
D
-0.1889025
D
0.1703342
16.2 D.C. Thermal Impedance Calculation
−t

τ
rt = ∑ rp ⋅ 1 − e p

p =1

p=n




Where p = 1 to n, n is the number of terms in the series.
t
rt
rp
τp
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of pth term.
Time Constant of rth term.
D.C. Double Side Cooled
Term
1
2
rp
0.0200056
9.923438×10
τp
0.3391689
0.1269073
3
4
0.01433715
4.284403×10
-3
0.03562131
2.562946×10
-3
-3
D.C. Single Side Cooled
Term
1
2
rp
0.06157697
8.431182×10
τp
2.136132
1.212898
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
-3
3
4
5
0.01031315
0.01613806
5.181088×10
-3
0.1512408
0.04244
2.889595×10
-3
Page 6 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Curves
Figure 1 - On-state characteristics of Limit device
10000
Figure 2 - Transient thermal impedance
1
R0472YS12# -16#
AD Issue 1
R0472YS12# -16#
AD Issue 1
SSC 0.1K/W
Transient Thermal Impedance - Zth, (k/W)
Instantaneous on-state current - IT (A)
0.1
125°C
1000
25°C
DSC 0.05K/W
0.01
0.001
100
0
1
2
3
0.0001
0.000001
4
0.0001
0.01
Instantaneous on-state voltage - VT (V)
Figure 3 - Gate characteristics - Trigger limits
8
1
100
Time (s)
Figure 4 - Gate characteristics - Power curves
20
R0472YS12# -16#
AD Issue 1
Tj=25°C
R0472YS12# -16#
AD Issue 1
Tj=25°C
18
7
Max VG dc
16
6
Max VG dc
Gate Trigger Voltage - VGT (V)
Gate Trigger Voltage - VGT (V)
14
5
4
IGT, VGT
3
12
10
8
PG Max 30W dc
6
4
-40°C
-10°C
25°C
125°C
2
1
PG 2W dc
2
Min VG dc
IGD, VGD
Min VG
0
0
0
0.1
0.2
0.3
0.4
0.5
0
0.6
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Page 7 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Figure 5 - Total recovered charge, Qrr
1000
Figure 6 - Recovered charge, Qra (50% chord)
1000
R0472YS12# -16#
AD Issue 1
R0472YS12# -16#
AD Issue 1
Tj = 125°C
2000A
1000A
550A
200A
Recovered charge - Qra (µC)
Total recovered charge - Qrr (µC)
Tj = 125°C
100
2000A
1000A
550A
200A
100
10
10
1
10
100
1
1000
Figure 7 - Peak reverse recovery current, Irm
1000
R0472YS12# -16#
AD Issue 1
R0472YS12# -16#
AD Issue 1
Tj = 125°C
Tj = 125°C
2000A
1000A
550A
200A
Reverse recovery time - trr (µs)
Reverse recovery current - IRM (A)
100
Figure 8 - Maximum recovery time, trr (50% chord)
10
1000
10
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
100
2000A
1000A
550A
200A
1
10
1
10
100
1
1000
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Page 8 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Figure 9 – Reverse recovery energy per pulse
1000
Figure 10 - Sine wave energy per pulse
1.00E+02
R0472YS12# -16#
AD Issue 1
Tj = 125°C
Vrm ≤ 400V
R0472YS12# -16#
AD Issue 1
Tj=125°C
2000A
1000A
550A
200A
1.00E+01
Energy per pulse (J)
Energy per pulse - Er (J)
100
3kA
1.00E+00
2kA
1kA
10
1.00E-01
550A
200A
1.00E-02
1.00E-05
1
1
10
100
1000
1.00E-04
Figure 11 – Square wave energy per pulse
1.00E+03
1.00E-03
1.00E-02
Pulse width (s)
Commutation rate - di/dt (A/µs)
Figure 12 - Square wave energy per pulse
1.00E+03
R0472YS12# -16#
AD Issue 1
R0472YS12# -16#
AD Issue 1
di/dt=100A/µs
di/dt=500A/µs
Tj=125°C
Tj=125°C
1.00E+02
1.00E+02
1.00E+01
Energy per pulse (J)
Energy per pulse (J)
3kA
2kA
3kA
2kA
1.00E+00
1.00E+01
1.00E+00
1kA
1.00E-01
1kA
550A
200A
1.00E-01
550A
200A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-02
Pulse width (s)
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 9 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Figure 13 - Sine wave frequency ratings
1.00E+05
Figure 14 - Sine wave frequency ratings
1.00E+05
R0472YS12# -16#
AD Issue 1
Tk=85°C
Tk=55°C
200A
R0472YS12# -16#
AD Issue 1
200A
100% Duty Cycle
1.00E+04
550A
1.00E+04
550A
100% Duty Cycle
1kA
1kA
1.00E+03
Frequency (Hz)
Frequency (Hz)
1.00E+03
2kA
3kA
2kA
3kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+00
1.00E-05
1.00E-02
Figure 15 - Square wave frequency ratings
1.00E+05
1.00E+05
di/dt=100A/µs
Tk=55°C
550A
1.00E-03
1.00E-02
Figure 16 - Square wave frequency ratings
R0472YS12# -16#
AD Issue 1
200A
1.00E-04
Pulse width (s)
Pulse Width (s)
R0472YS12# -16#
AD Issue 1
di/dt=500A/µs
Tk=55°C
200A
100% Duty Cycle
1.00E+04
1.00E+04
550A
1kA
100% Duty Cycle
1kA
2kA
1.00E+03
3kA
1.00E+02
3kA
1.00E+02
1.00E+01
1.00E+00
1.00E-05
2kA
Frequency (Hz)
Frequency (Hz)
1.00E+03
1.00E+01
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 10 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Figure 17 - Square wave frequency ratings
1.00E+05
1.00E+05
R0472YS12# -16#
AD Issue 1
200A
1.00E+04
Figure 18 - Square wave frequency ratings
R0472YS12# -16#
AD Issue 1
di/dt=100A/µs
di/dt=500A/µs
Tk=85°C
Tk=85°C
100% Duty Cycle
1.00E+04
200A
100% Duty Cycle
550A
550A
1.00E+03
Frequency (Hz)
Frequency (Hz)
1kA
1.00E+03
2kA
1kA
1.00E+02
2kA
3kA
3kA
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+00
1.00E-05
1.00E-02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
2
Figure 19 - Maximum surge and I t Ratings
Gate may temporarily lose control of conduction angle
1.00E+06
R0472YS12# -16#
AD Issue 1
I2t: VRRM≤10V
I2t: 60% VRRM
2
2
Tj (initial) = 125°C
Maximum I t (A s)
Total peak half sine surge current - I TSM (A)
100000
10000
1.00E+05
ITSM: VRRM≤10V
ITSM: 60% VRRM
1000
1
3
5
10
Duration of surge (ms)
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
1
5
10
50
100
1.00E+04
Duration of surge (cycles @ 50Hz)
Page 11 of 12
June, 2008
WESTCODE An IXYS Company
Distributed Gate Thyristor types R0472YS12# to R0472YS16#
Outline Drawing & Ordering Information
101A335
ORDERING INFORMATION
(Please quote 10 digit code as below)
R0472
YS
♦♦
#
Fixed
Type Code
Fixed
Outline Code
Voltage Code
VDRM/100
12, 14, 16
tq Codes
E=25µs, F=30µs, H=40µs,
J=50µs
Typical order code: R0472YS16J – 1600V VRRM/VDRM, 50µs tq, 15.1mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
WESTCODE
An
IXYS Company
IXYS Corporation
1590 Buckeye Drive
Milpitas CA95035-7418 USA
Tel: +1 (408) 457 9000
Fax: +1 (408) 496 0670
E-mail: [email protected]
www.westcode.com
www.ixys.com
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: [email protected],com
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: [email protected]
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1
Page 12 of 12
June, 2008