Date:- 01 August 2012 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R0990LC08x (Old Type Number: R270CH04-08) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 800 V VDSM Non-repetitive peak off-state voltage, (note 1) 900 V VRRM Repetitive peak reverse voltage, (note 1) 800 V VRSM Non-repetitive peak reverse voltage, (note 1) 900 V MAXIMUM LIMITS UNITS Maximum average on-state current, Tsink=55°C, (note 2) 990 A Maximum average on-state current. Tsink=85°C, (note 2) 652 A Maximum average on-state current. Tsink=85°C, (note 3) 373 A Nominal RMS on-state current, Tsink=25°C, (note 2) 2001 A D.C. on-state current, Tsink=25°C, (note 4) 1627 A Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5) 11000 A Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5) 12000 OTHER RATINGS IT(AV)M IT(AV)M IT(AV)M IT(RMS) IT(d.c.) ITSM ITSM2 2 It I2 t (di/dt)cr 2 I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5) I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5) A 3 A2s 3 A2s 605×10 720×10 Maximum rate of rise of on-state current (repetitive), (note 6) 1000 Maximum rate of rise of on-state current (non-repetitive), (note 6) 1500 A/µs Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 2 W PGM Peak forward gate power 30 W Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C VRGM Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. Data Sheet. Type R0990LC08x Issue 3 Page 1 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 1.84 VT0 Threshold voltage - - 1.35 V rT Slope resistance - - 0.35 mΩ 200 - - (dv/dt)cr Critical rate of rise of off-state voltage ITM=1400A V VD=80% VDRM, Linear ramp, Gate o/c V/µs IDRM Peak off-state current - - 70 Rated VDRM mA IRRM Peak reverse current - - 70 Rated VRRM mA VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 300 VGD Gate non-trigger voltage - - 0.25 Rated VDRM IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time 0.4 1.0 tgt Turn-on time - 1.0 2.0 VD=67% VDRM, ITM=1500A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 90 105 Qra Recovered charge, 50% Chord - 40 - Irm Reverse recovery current - 55 - trr Reverse recovery time - 1.55 - - 10 - - 12 - - - 0.032 Double side cooled K/W - - 0.064 Single side cooled K/W 10 - 20 - 340 - tq Turn-off time (note 2) RthJK Thermal resistance, junction to heatsink (note 3) F Mounting force Wt Weight Tj=25°C V VD=10V, IT=3A mA V µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V Page 2 of 12 A µs ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs IITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs µs kN Outline option LC g Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for details of tq codes. 3) For other clamp forces, please consult factory Data Sheet. Type R0990LC08x Issue 3 µC August 2012 Distributed Gate Thyristor Type R0990LC08x Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 08 VDRM VDSM V 800 VRRM V 800 VRSM V 900 VD DC V 900 VR DC V 530 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 7.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 8.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Data Sheet. Type R0990LC08x Issue 3 Page 3 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x 9.0 Frequency Ratings The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings shown on page 1. 10.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 11.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 12.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv 13.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let RthJK be the steady-state d.c. thermal resistance (junction to sink) and TK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TK (max .) = 125 − (W AV ⋅ RthJK ) 14.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1 150 µs (ii) Qrr is based on a 150µs integration time i.e. Qrr = ∫i rr .dt 0 (iii) Data Sheet. Type R0990LC08x Issue 3 K Factor = Page 4 of 12 t1 t2 August 2012 Distributed Gate Thyristor Type R0990LC08x 15.0 Reverse Recovery Loss 15.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TK ( new ) = TK ( original ) − E ⋅ (k + f ⋅ RthJK ) Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. RthJK = d.c. thermal resistance (°C/W). The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 15.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TK (new ) = TK (original ) − (E ⋅ Rth ⋅ f ) Where TK (new) is the required maximum heat sink temperature and TK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Data Sheet. Type R0990LC08x Issue 3 Where: Vr CS R = Commutating source voltage = Snubber capacitance = Snubber resistance Page 5 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x 16.0 Computer Modelling Parameters 16.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs VT, on page 7 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 125°C Coefficients A 3.0403257 B -0.4165914 C -3.5756×10-5 D 0.04991413 16.2 D.C. Thermal Impedance Calculation −t ⎛ τ rt = ∑ rp ⋅ ⎜1 − e p ⎜ p =1 ⎝ p=n ⎞ ⎟ ⎟ ⎠ Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Double Side Cooled Term 1 2 3 rp 0.01771901 4.240625×10 τp 0.7085781 0.1435833 -3 4 6.963806×10 -3 3.043661×10-3 2.130842×10-3 0.03615196 D.C. Single Side Cooled Term 1 2 3 rp 0.03947164 0.01022837 8.789912×10 τp 4.090062 1.078983 0.08530917 Data Sheet. Type R0990LC08x Issue 3 Page 6 of 12 4 -3 4.235162×10 0.01128791 5 -3 1.907609×10-3 1.240861×10-3 August 2012 Distributed Gate Thyristor Type R0990LC08x Curves Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance 10000 0.1 SSC 0.064K/W DSC 0.032K/W 0.01 Transient Thermal Impedance - Z(th)t (K/W) Instantaneous on-state current - I T (A) Tj = 125°C 1000 0.001 0.0001 R0990LC08x R0990LS04x-08x Issue Issue32 R0990LC08x R0990LS04x-08x Issue Issue 32 100 0 0.5 1 1.5 2 2.5 3 0.00001 0.0001 Instantaneous on-state voltage - VT (V) 0.001 0.01 0.1 1 10 100 Time (s) Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves 20 6 R0990LC08x R0990LS04x-08x Issue23 Issue R0990LS04x-08x R0990LC08x Issue 23 18 Tj=25°C Tj=25°C 5 16 Gate Trigger Voltage - VGT (V) Gate Trigger Voltage - VGT (V) 14 Max VG dc 4 IGT, VGT 3 Max VG dc 12 10 8 2 PG Max 30W dc -40°C -10°C 25°C 125°C 6 4 1 PG 2W dc 2 IGD, VGD Min VG dc Min VG dc 0 0 0 0.2 0.4 0.6 0.8 0 1 Data Sheet. Type R0990LC08x Issue 3 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x Figure 5 - Total recovered charge, Qrr Figure 6 - Recovered charge, Qra (50% chord) 1000 1000 2000A 1500A 1000A 2000A Recovered charge - Qra (µC) Total recovered charge - Qrr (µC) 500A 100 1500A 1000A 500A 100 Tj = 125°C Tj = 125°C R0990LS04x-08x R0990LC08x Issue Issue 32 R0990LS04x-08x R0990LC08x Issue 32 Issue 10 10 10 100 1000 10 Commutation rate - di/dt (A/µs) 1000 Figure 8 - Maximum recovery time, trr (50% chord) Figure 7 - Peak reverse recovery current, Irm 10 1000 2000A 1500A 1000A 500A Reverse recovery time - trr (µs) Reverse recovery current - IRM (A) 100 Commutation rate - di/dt (A/µs) 100 2000A 1500A 1000A 500A Tj = 125°C R0990LS04x-08x R0990LC08x Issue32 Issue Tj = 125°C R0990LS04x-08x R0990LC08x Issue 32 Issue 1 10 10 100 10 1000 Commutation rate - di/dt (A/µs) Data Sheet. Type R0990LC08x Issue 3 100 1000 Commutation rate - di/dt (A/µs) Page 8 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse 1.00E+02 100 R0990LS04x-08x R0990LC08x Issue Issue23 Tj=125°C 1500A 1.00E+01 Energy per pulse (J) Energy per pulse - Er (mJ) 1000A 800A 500A 4kA 1.00E+00 2kA 1.5kA 1kA 1.00E-01 Snubber 0.25µF, 4.7Ω 500A Tj = 125°C Vr = 200V R0990LS04x-08x R0990LC08x Issue32 Issue 10 10 100 1.00E-02 1.00E-05 1000 1.00E-04 Figure 11 - Sine wave frequency ratings 1.00E+05 1.00E-03 1.00E-02 Pulse width (s) Commutation rate - di/dt (A/µs) Figure 12 - Sine wave frequency ratings 1.00E+05 R0990LS04x-08x R0990LC08x Issue 23 THs=55°C 500A 100% Duty Cycle 500A 100% Duty Cycle 1.00E+04 1kA 1kA 1.00E+04 1.5kA 1.5kA 2kA 2kA Frequency (Hz) Frequency (Hz) 1.00E+03 1.00E+03 4kA 4kA 1.00E+02 1.00E+02 1.00E+01 THs=85°C R0990LS04x-08x R0990LC08x Issue2 3 Issue 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 Pulse Width (s) Data Sheet. Type R0990LC08x Issue 3 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 9 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings 1.00E+05 1.00E+05 100% Duty Cycle 100% Duty Cycle 500A 1.00E+04 1.00E+04 1kA 1.5kA 2kA 1.00E+03 1.00E+03 Frequency (Hz) Frequency (Hz) 4kA 2kA 1.5kA 1kA 4kA 1.00E+02 1.00E+02 1.00E+01 1.00E+01 THs=55°C THs=55°C di/dt=100A/µs R0990LS04x-08x R0990LC08x Issue Issue23 di/dt=500A/µs R0990LS04x-08x R0990LC08x Issue 32 Issue 1.00E+00 1.00E-05 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings 1.00E+05 1.00E+05 100% Duty Cycle 500A 1.00E+04 100% Duty Cycle 500A 1.00E+04 1kA 1kA 1.5kA 1.5kA Frequency (Hz) Frequency (Hz) 1.00E+03 2kA 1.00E+03 2kA 1.00E+02 4kA 4kA 1.00E+02 1.00E+01 THs=85°C THs=85°C di/dt=100A/µs R0990LS04x-08x R0990LC08x Issue Issue2 3 di/dt=500A/µs 1.00E+01 1.00E-05 R0990LS04x-08x R0990LC08x Issue Issue23 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 Pulse width (s) Data Sheet. Type R0990LC08x Issue 3 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 10 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x Figure 17 - Square wave energy per pulse Figure 18 - Square wave energy per pulse 1.00E+03 1.00E+03 R0990LS04x-08x R0990LC08x Issue Issue23 di/dt=500A/µs Tj=125°C R0990LS04x-08x R0990LC08x Issue23 Issue di/dt=100A/µs Tj=125°C 1.00E+02 1.00E+01 Energy per pulse (J) Energy per pulse (J) 1.00E+02 4kA 1.00E+00 4kA 2kA 1.5kA 1.00E+01 1.00E+00 2kA 1kA 500A 1.5kA 1.00E-01 1kA 1.00E-01 500A 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 19 - Maximum surge and I2t Ratings Gate may temporarily lose control of conduction angle 1.00E+07 R0990LC08x R0990LS04x-08x Issue2 3 Issue I2t: VRRM≤10V Tj (initial) = 125°C 2 I t: 60% VRRM 10000 1.00E+06 ITSM: VRRM≤10V Maximum I2t (A2s) Total peak half sine surge current - ITSM (A) 100000 ITSM: 60% VRRM 1000 1.00E+05 1 3 5 10 Duration of surge (ms) Data Sheet. Type R0990LC08x Issue 3 1 5 10 50 100 Duration of surge (cycles @ 50Hz) Page 11 of 12 August 2012 Distributed Gate Thyristor Type R0990LC08x Outline Drawing & Ordering Information 101A216 Outline option LC ORDERING INFORMATION (Please quote 10 digit code as below) R0990 LC ♦♦ ♦ Fixed Type Code Outline Code LC=27mm height, Fixed Voltage Code VDRM/100 08 tq Code A=10µs, B=12µs, C = 15µs Typical order code: R0990LC08B – 600V VDRM, 800V VRRM 12µs tq, 27mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type R0990LC08x Issue 3 Page 12 of 12 August 2012

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