Date:- 27 Nov, 2014 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC Continuous DC collector current, IGBT 2400 A ICRM Repetitive peak collector current, tp=1ms, IGBT 4800 A IECO Maximum reverse emitter current, tp=100µs, (note 2 & 3) 2400 A PMAX Maximum power dissipation, IGBT (note 2) 19 kW Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial. Data Sheet T2400GB45E Issue 2 Page 1 of 6 November, 2014 Insulated Gate Bi-polar Transistor Type T2400GB45E Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS - 2.8 3.2 IC = 2400A, VGE = 15V, Tj = 25°C IC = 2400A, VGE = 15V UNITS V VCE(sat) Collector – emitter saturation voltage - 3.6 4.0 VT0 Threshold voltage - - 1.49 rT Slope resistance - - 1.05 VGE(TH) Gate threshold voltage - 5.1 - VCE = VGE, IC = 250mA V ICES Collector – emitter cut-off current 45 70 VCE = VCES, VGE = 0V mA IGES Gate leakage current - - ±30 VGE = ±20V µA Cies Input capacitance - 400 - VCE = 25V, VGE = 0V, f = 1MHz nF td(on) Turn-on delay time - 1.4 - tr(V) Qg(on) Rise time Turn-on gate charge - 3.2 18 V V Current range: 800A – 2400A mΩ µs - IC =2400A, VCE =2800V, di/dt=4000A/µs µs - VGE = ±15V, Ls=200nH µC J Eon Turn-on energy - 13 - Rg(ON)= 2.2Ω, Rg(OFF)=8.2Ω, CGE=267nF td(off) Turn-off delay time - 4.6 - Freewheel diode type E2400TC45C at Tj=125°C. µs tf(I) Fall time - 2.6 - (Notes 3, 4 & 5) µs Qg(off) Turn-off gate charge - 14 - µC Eoff Turn-off energy - 13 - J ISC Short circuit current - 9500 - MIN TYP MAX - - - VGE=+15V, VCC=2800V, VCEmax≤VCES, tp≤10µs A Thermal Characteristics PARAMETER RthJK Thermal resistance junction to sink, IGBT F Mounting force Wt Weight TEST CONDITIONS UNITS 5.2 Double side cooled K/kW - 8.5 Collector side cooled K/kW Emitter side cooled K/kW - - 13.5 50 - 70 - 2 - Note 2 kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements. 3) CGE is additional gate - emitter capacitance added to output of gate drive circuit. 4) Eon integration time 15µs from 10% rising IG. 5) Eoff integration time 15µs from 90% falling VGE. Data Sheet T2400GB45E Issue 2 Page 2 of 6 November, 2014 Insulated Gate Bi-polar Transistor Type T2400GB45E Curves Figure 1 – Typical collector-emitter saturation voltage characteristics Figure 2 – Typical output characteristic 10000 6000 T2400GB45E Issue 2 V GE =+15V T2400GB45E Issue 2 T j =25°C 5000 25°C 125°C Collector current - IC(A) Collector current - IC (A) 4000 1000 3000 V GE = 20V V GE = 17V V GE = 15V V GE = 13V V GE = 11V 2000 1000 0 100 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Collector to emitter saturation voltage - V CE(sat)(V) Collector to em itter saturation voltage - V CE(sat) (V) Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 6000 15 V CE =2800V V G E =±15V C G E =267nF T j=125°C T2400G B45E Issue 2 T j =125°C T2400GB45E Issue 2 5000 I C =2400A I C =1500A Turn-on delay time - td(on)(µs) Collector current - I c(A) 4000 V G E = 20V V G E = 17V V G E = 15V V G E = 13V V G E = 11V 3000 2000 10 5 1000 0 0 0 1 2 3 4 5 6 0 7 Collector to em itter saturation voltage - V CE(sat) (V) Data Sheet T2400GB45E Issue 2 2 4 6 8 10 12 14 Gate resistance - R G(on) (Ω ) Page 3 of 6 November, 2014 Insulated Gate Bi-polar Transistor Type T2400GB45E Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current 14 15 T2400GB45E Issue 2 VCE=2800V VGE=±15V CGE=267nF Tj=125°C IC=2400A V CE=2800V RG(on)=2.2Ω CGE=267nF V GE=±15V Tj=125°C IC=1500A Turn-on energy per pulse - E(on)(J) Turn-off delay time - td(off)(µs) 12 T2400GB45E Issue 2 10 8 6 10 V CE=2000V 5 V CE=1000V 4 2 0 5 10 15 20 25 30 0 1000 Figure 7 – Typical turn-on energy vs. di/dt 3000 Figure 8 – Typical turn-off energy vs. collector current 50 15 T2400GB45E Issue 2 T2400GB45E Issue 2 V CE =2800V V GE =±15V T j=125°C V CE =2800V R G(off)=8.2Ω C GE =267nF V GE =±15V T j=125°C Turn-on energy per pulse - E(off)(mJ) 40 Turn-on energy per pulse - E(on)(J) 2000 Collector current - IC (A) Gate resistance - RG(off) (Ω) 30 20 10 V CE =2000V V CE =1000V 5 IC =2400A 10 IC =1500A 0 0 0 1000 2000 3000 4000 5000 Commutation rate - di/dt (A/µs) Data Sheet T2400GB45E Issue 2 0 1000 2000 3 000 Collector current - IC (A) Page 4 of 6 November, 2014 Insulated Gate Bi-polar Transistor Type T2400GB45E Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area 5000 15 V GE=±15V Maximum Ls=200nH Tj=125°C Non-repetitive T2400GB45E Issue 2 R G(off)=8.2Ω C GE=267nF V GE=±15V Tj=125°C IC=2400A T2400GB45E Issue 2 4000 IC=2000A Collector current - IC (A) Turn-off energy - Eoff (J) 10 IC=1500A 3000 2000 IC=1000A 5 IC=800A 1000 0 500 0 1000 1500 2000 2500 3000 3500 0 Collector-emitter voltage - V CE (V) 1000 2000 3000 4000 5000 Collector-emitter voltage - V CE (V) Transient thermal impedance junction to sink (K/W) 0.1 T2400GB45E Issue 2 Emitter Collector Double Side 0.01 0.001 0.0001 0.00001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Time (s) Data Sheet T2400GB45E Issue 2 Page 5 of 6 November, 2014 Insulated Gate Bi-polar Transistor Type T2400GB45E Outline Drawing & Ordering Information 101A359 ORDERING INFORMATION T2400 GB Fixed type Code Fixed Outline Code (Please quote 10 digit code as below) 45 IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] E Voltage Grade VCES/100 45 Typical order code: T2400GB45E (VCES = 4500V) Fixed format code IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.net IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet T2400GB45E Issue 2 Page 6 of 6 November, 2014