Date: 27.01.2005 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 700 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC MCA MCK MCDA MDCA 1200 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 700-12io1W 1400 700-14io1W 700-14io1W 700-14io1W 700-14io1W 700-14io1W 700-14io1W 700-14io1W 1600 700-16io1W 700-16io1W 700-16io1W 700-16io1W 700-16io1W 700-16io1W 700-16io1W 1800 700-18io1W 700-18io1W 700-18io1W 700-18io1W 700-18io1W 700-18io1W 700-18io1W VOLTAGE RATINGS VDRM VDSM VRRM VRSM Repetitive peak off-state voltage 1) Non-repetitive peak off-state voltage Repetitive peak reverse voltage 1) 1) Non-repetitive peak reverse voltage 1) OTHER RATINGS IT(AV)M IT(AV)M IT(AV)M V 1200-1800 V 1300-1900 V MAXIMUM LIMITS UNITS A Maximum average on-state current. Twater = 42°C, 4l/min 700 A Maximum average on-state current. Twater = 85°C, 4l/min 2) 398 A 1331 A 1057 A 16.5 kA 2) Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM Peak non-repetitive surge tp = 10 ms, VRM ≤ 10V 2 I t capacity for fusing tp = 10 ms, VRM = 60%VRRM 2 I t capacity for fusing tp = 10 ms, VRM ≤ 10 V 2 3) 3) 2 (di/dt)cr 1200-1800 847 D.C. on-state current, Twater = 17°C, 4l/min It V 2) IT(d.c.) It 1200-1800 2) Nominal RMS on-state current, Twater = 17°C, 4l/min ITSM2 UNITS Maximum average on-state current, Twater = 17°C, 4l/min IT(RMS)M ITSM MAXIMUM LIMITS 18.2 3) 3) Critical rate of rise of on-state current (repetitive) 4) Critical rate of rise of on-state current (non-repetitive) 4) kA 1.36×10 6 As 2 1.66×10 6 As 2 150 A/µs 300 A/µs 5 V VRGM Peak reverse gate voltage PG(AV) Mean forward gate power 4 W PGM Peak forward gate power 30 W VISOL Isolation Voltage 3500 V Tvj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C 5) Notes: 1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C. 2) Single phase; 50 Hz, 180° half-sinewave. 3) Half-sinewave, 125°C Tvj initial. 4) VD = 67% VDRM, IFG = 2 A, tr ≤ 0.5µs, Tvj = 125°C. 5) AC RMS voltage, 50 Hz, 1min test Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 Page 1 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Thyristor Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS VTM Maximum peak on-state voltage - - 1.5 ITM = 1700 A V VTM Maximum peak on-state voltage - - 1.17 ITM = 700 A V VT0 Threshold voltage - - 0.85 V rT Slope resistance - - 0.27 mΩ (dv/dt)cr Critical rate of rise of off-state voltage 1000 - - IDRM Peak off-state current - - IRRM Peak reverse current - VGT Gate trigger voltage IGT VD = 80% VDRM, linear ramp, Gate o/c V/µs 70 Rated VDRM mA - 70 Rated VRRM mA - - 3.0 Gate trigger current - - 300 IH Holding current - - 1000 Tvj = 25°C tgd Gate controlled turn-on delay time - 0.6 1.5 tgt Turn-on time - 1.2 2.5 Qrr Recovered Charge - 2200 - Qra Recovered Charge, 50% chord - 1600 Irm Reverse recovery current - 120 trr Reverse recovery time, 50% chord - 25 - - 200 - tq Turn-off time - 300 - - - 0.09 Single Thyristor K/W 4.25 - 5.75 Nm RthJW Thermal resistance, junction to water F1 Mounting force (to heatsink) F2 Mounting force (to terminals) Wt Weight V Tvj = 25°C, VD = 10 V, IT = 3 A mA mA IFG = 2 A, tr = 0.5 µs, VD = 67%VDRM, ITM = 2000 A, di/dt = 10 A/µs, Tvj = 25°C µC 1900 ITM = 1000 A, tp = 1 ms, di/dt = 10A/µs, VR = 50 V - 10.2 - 13.8 - 1.5 - µs µC A µs ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs, VR = 50 V, VDR = 80%VDRM, dvDR/dt = 20 V/µs ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs, VR = 50 V, VDR = 80%VDRM, dvDR/dt = 200 V/µs 2) µs Nm kg Diode Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS VFM Maximum peak forward voltage - - 1.09 ITM = 1700 A V VT0 Threshold voltage - - 0.72 V rT Slope resistance - - 0.143 mΩ IRRM Peak reverse current - - 50 Qrr Recovered Charge - 2200 - Qra Recovered Charge, 50% chord - 1800 Irm Reverse recovery current - 145 trr Reverse recovery time, 50% chord - 25 Rated VRRM 2250 ITM = 1000 A, tp = 1ms, di/dt = 10 A/µs, VR = 50 V - mA µC µC A µs Notes: 1) Unless otherwise indicated Tvj=125°C. 2) Screws must be lubricated Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 Page 2 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Notes on Ratings and Characteristics 1.0 Voltage Grade Table VDRM VDSM VRRM V 1200 1400 1600 1800 Voltage Grade 12 14 16 18 VRSM V 1300 1500 1700 1900 VD VR DC V 820 930 1040 1150 2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 Page 3 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 8.0 Computer Modelling Parameters 8.1 Thyristor Dissipation Calculations 2 I AV = WAV = 2 − VT 0 + VT 0 + 4 ⋅ ff ⋅ rT ⋅WAV 2 ⋅ ff 2 ⋅ rT and: ∆T Rth ∆T = T j max − TK Where VT0 = 0.85 V, rT = 0.27 mΩ for the thyristor and VT0 = 0.72 V, rT = 0.143 mΩ for the diode. Rth = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle 30° 60° 90° 120° 180° 270° d.c. Square wave 0.0976 0.0955 0.0942 0.0933 0.0920 0.0907 0.090 Sine wave 0.0950 0.0933 0.0924 0.0917 0.0902 Form Factors Conduction Angle 30° 60° 90° 120° 180° 270° d.c. Square wave 3.464 2.449 2 1.732 1.414 1.149 1 Sine wave 3.98 2.778 2.22 1.879 1.57 8.2 Calculating thyristor VT using ABCD Coefficients The on-state characteristic IT vs. VT, on page 6 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients A B 125°C Coefficients 0.7860338 -3 9.929062×10 -4 C 1.94704×10 D 7.409213×10 Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 -3 A -0.099137717 B 0.1987038 C 4.23812×10 D -0.01453705 Page 4 of 12 -4 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 8.3 D.C. Thermal Impedance Calculation −t τ rt = ∑ rp ⋅ 1 − e p p =1 p=n Where p = 1 to n n = t rt rp τp number of terms in the series and = Duration of heating pulse in seconds. = Thermal resistance at time t. = Amplitude of pth term. = Time Constant of rth term). The coefficients for this device are shown in the tables below: D.C. Term 1 2 3 -3 4 -3 5 -3 2.16406×10 -3 6.07258×10 rp 0.07972 3.64310×10 4.87795×10 1.91134×10 τp 4.46119 0.71394 0.06312 5.07740×10 -3 -3 9.0 Reverse recovery ratings (i) Qra is based on 50% IRM chord as shown in Fig. 1 Fig. 1 (ii) Qrr is based on a 150 µs integration time i.e. 150 µs Qrr = ∫i rr .dt 0 (iii) K Factor = t1 t2 Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 Page 5 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Thyristor Curves Figure 1 – On-state characteristics of Limit device Figure 2 – Transient thermal impedance 0.1 10000 M##700-12io1W-18io1W Issue 1 Tj = 25°C M##700-12io1W-18io1W Issue 1 Single Thyristor Tj = 125°C Thermal impedance (K/W) Instantaneous On-state current - ITM (A) 0.01 1000 0.001 0.0001 100 0.5 1 1.5 2 2.5 3 0.00001 0.00001 0.0001 3.5 Instantaneous On-state voltage - VTM (V) 0.1 1 10 100 Figure 4 – Gate characteristics – Power curves 35 M##700-12io1W-18io1W Issue 1 Tj=25°C M##700-12io1W-18io1W Issue 1 Tj=25°C 7 30 6 Max VG dc Gate Trigger Voltage - VGT (V) 4 IGT, VGT 20 15 PG Max 30W dc 10 -40°C 25°C -10°C 3 2 Max VG dc 25 5 125°C Gate Trigger Voltage - VGT (V) 0.01 Time (s) Figure 3 – Gate characteristics – Trigger limits 8 0.001 PG 4W dc 5 1 Min VG dc IGD, VGD Min VG dc 0 0 0 0.2 0.4 0.6 0.8 0 1 Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 6 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Figure 5 – Total recovered charge, Qrr 10000 Figure 6 – Recovered charge, Qra (50% chord) 10000 M##700-12io1W-18io1W Issue 1 Tj=125°C M##700-12io1W-18io1W Issue 1 Tj=125°C 2000A Recovered charge - Qra, 50% chord (µC) 1500A Recovered charge - Qrr (µC) 1000A 500A 1000 2000A 1500A 1000A 500A 1000 1 10 100 1000 1 10 di/dt (A/µs) Figure 7 – Peak reverse recovery current, Irm 1000 Figure 8 – Maximum recovery time, trr (50% chord) 100 1000.00 100 di/dt (A/µs) M##700-12io1W-18io1W Issue 1 Tj=125°C 2000A 1500A 1000A 500A M##700-12io1W-18io1W Issue 1 Reverse recovery current - Irm (A) Reverse recovery time (50% chord) - trr (µs) Tj=125°C 10 2000A 1500A 1000A 500A 1 100.00 1 10 100 1 1000 Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 10 100 1000 di/dt (A/µs) di/dt (A/µs) Page 7 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Figure 9 – On-state current vs. Power dissipation – Sine wave 1200 140 M##700-12io1W-18io1W Issue 1 30° Figure 10 – On-state current vs. Heatsink temperature – Sine wave 60° 90° 120° 120 Maximum permissable heatsink temperature (°C) 1000 Maximum forward dissipation (W) M##700-12io1W-18io1W Issue 1 180° 800 600 400 200 100 80 60 40 30° 20 0 90° 120° 180° 0 0 200 400 600 800 1000 0 Mean forward current (A) (Whole cycle averaged) 1200 200 400 600 800 1000 Mean forward current (A) (Whole cycle averaged) Figure 11 – On-state current vs. Power dissipation – Square wave Figure 12 – On-state current vs. Heatsink temperature – Square wave 140 M##700-12io1W-18io1W Issue 1 M##700-12io1W-18io1W Issue 1 120 Maximum permissible heatsink temperature (°C) 1000 Maximum forward dissipation (W) 60° 800 d.c. 270° 180° 120° 90° 60° 30° 600 400 200 100 80 60 40 30° 20 0 60° 90° 120° 180° 270° d.c. 0 0 200 400 600 800 0 1000 Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 200 400 600 800 1000 Mean Forward Current (Amps) (Whole Cycle Averaged) Mean Forward Current (Amps) (Whole Cycle Averaged) Page 8 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 2 Figure 13 – Maximum surge and I t Ratings Gate may temporarily lose control of conduction angle 100000 1.00E+07 I2t: VRRM ≤10V 2 2 Maximum I t (A s) Total peak half sine surge current (A) I2t: 60% VRRM 1.00E+06 10000 ITSM: VRRM ≤10V ITSM: 60% VRRM Tj (initial) = 125°C 1000 M##700-12io1W-18io1W Issue 1 1 3 5 10 1 Duration of surge (ms) 5 10 50 100 1.00E+05 Duration of surge (cycles @ 50Hz) Figure 14 – Average on-state current and Power loss Vs. Inlet water temperature 10000 Maximum average on-state current, IT(AV)M (A) 1000 Average Current Power Loss Total Power Loss (W) 1000 M##700-12io1W-18io1W Issue 1 100 100 0 10 20 30 40 50 60 70 80 90 Inlet water temperature, Twater (°C) Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 Page 9 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Diode Curves Figure 15 – Total recovered charge, Qrr 10000 Figure 16 – Recovered charge, Qra (50% chord) 10000 M##700-12io1W-18io1W Issue 1 Tj=125°C M##700-12io1W-18io1W Issue 1 Tj=125°C 2000A 1500A Recovered charge - Qra, 50% chord (µC) 1000A Recovered charge - Qrr (µC) 500A 1000 2000A 1500A 1000A 500A 1000 1 10 100 1000 1 10 100 di/dt (A/µs) Figure 17 – Peak reverse recovery current, Irm Figure 18 – Maximum recovery time, trr (50% chord) 100 10000 M##700-12io1W-18io1W Issue 1 Tj=125°C M##700-12io1W-18io1W Issue 1 Reverse recovery time (50% chord) - trr (µs) Tj=125°C Reverse recovery current - Irm (A) 1000 di/dt (A/µs) 2000A 1500A 1000A 500A 1000 10 2000A 1500A 1000A 500A 1 100 1 10 100 1 1000 Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 10 100 1000 di/dt (A/µs) di/dt (A/µs) Page 10 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Figure 19 – Instantaneous forward voltage VF Instantaneous forward current - IFM (A) 10000 M##700-12io1W-18io1W Issue 1 125°C 125°C 1000 100 0 0.5 1 1.5 2 2.5 Maximum instantaneous forward voltage - VFM (V) Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 Page 11 of 12 January, 2005 IXYS Thyristor/Diode Module Types M##700-12io1 and M##700-18io1 Outline Drawing & Ordering Information 3 67 1 5 4 2 3 1 5 4 2 3 67 1 2 1 5 4 2 MCC MCD MDC 376 MCA 3 67 1 4 5 2 3 1 5 4 2 37 6 1 2 MCK MCDA 150A113 MDCA ORDERING INFORMATION (Please quote 11 digit code as below) M ## / ### 700 Fixed Type Code Configuration code CC, CD, DC, CA, CK, CDA, DCA Average Current Rating Voltage code VDRM/100 12-18 io i = Critical dv/dt 1000 V/µs o = Typical turn-off time 1 W Fixed Version Code Water cooled base Order code: MCD700-14io1W– MCD configuration, 1400V VDRM, VRRM, water cooled base IXYS IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: [email protected] www.ixys.com WESTCODE An Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode,com Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: [email protected] IXYS Company www.westcode.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. © IXYS Semiconductor GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1 Page 12 of 12 January, 2005