WESTCODE An Date:- 25 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC(DC) DC collector current, IGBT 2250 A ICRM Repetitive peak collector current, tp=1ms, IGBT 4500 A IECO Maximum reverse emitter current, tp=100µs, (note 2 & 3) 2250 A PMAX Maximum power dissipation, IGBT (Note 2) 11.8 KW Tjop Operating temperature range. -40 to +125 °C Tstg Storage temperature range. -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) The use of an anti-parallel diode is recommended. Prospective Data Sheet T2250AB25E Issue P1 Page 1 of 6 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T2250AB25E Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS - 2.05 2.35 IC = 2250A, VGE = 15V, Tj = 25°C V - 2.90 3.20 IC = 2250A, VGE = 15V V Threshold voltage - - 1.29 rT Slope resistance - - 0.85 VGE(TH) Gate threshold voltage - 5.8 6.3 VCE = VGE, IC = 200mA V ICES Collector – emitter cut-off current 20 60 VCE = VCES, VGE = 0V mA IGES Gate leakage current - 10 ±30 VGE = ±20V µA Cies Input capacitance - 300 - VCE = 25V, VGE = 0V, f = 1MHz nF td(on) Turn-on delay time - 1.2 - tr(V) Rise time - 2.7 - IC =2250A, VCE =1250V, di/dt=4000A/µs µs Qg(on) Turn-on gate charge - 17 - VGE = ±15V, Ls=200nH µC Eon Turn-on energy - 5.3 - Rg(ON)= 1.2Ω, Rg(OFF)=3.3Ω, CGE=100nF J td(off) Turn-off delay time - 1.8 - Freewheel diode type E2250VF25C µs tf(I) Fall time - 8.5 - (Note 3) µs Qg(off) Turn-off gate charge - 16 - Eoff Turn-off energy - 3.7 - VCE(sat) Collector – emitter saturation voltage VT0 ISC Short circuit current V Current range: 750 – 2250A mΩ µs µC J VGE=+15V, VCC=1250V, VCEmax≤VCES, tp≤10µs - 6300 - MIN TYP MAX TEST CONDITIONS UNITS - - 8.45 Double side cooled K/kW - - 13.3 Collector side cooled K/kW - - 24.5 Emitter side cooled K/kW 25 - 35 - 1.5 - A Thermal Characteristics PARAMETER RthJK Thermal resistance junction to sink, IGBT F Mounting force Wt Weight Note 2 kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements 3) CGE is additional gate – emitter capacitance added to output of gate drive Prospective Data Sheet T2250AB25E Issue P1 Page 2 of 6 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T2250AB25E Curves Figure 1 – Typical collector-emitter saturation voltage characteristics Figure 2 – Typical output characteristic 5000 10000 T2250AB25E Issue P1 V GE =+15V T2250AB25E Issue P1 T j =25°C 25°C 125°C 4000 Collector current - Ic(A) Collector current - IC (A) 1000 3000 2000 100 V GE = 20V V GE = 17V V GE = 15V V GE = 12V V GE = 10V 1000 10 0 0 1 2 3 4 5 0 Collector to emitter saturation voltage - V CE(sat) (V) 1 2 3 Collector to emitter saturation voltage - V CE(sat) (V) 4 Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 5000 6 V CE =1250V IC =2250A V GE =±15V C GE =100nF T j=125°C T2250AB25E Issue P1 T j =125°C 5 T2250AB25E Issue P1 4000 Turn-on delay time - td(on)(µs) Collector current - Ic(A) 4 3000 2000 3 2 V GE = 20V V GE = 17V V GE = 15V V GE = 12V V GE = 10V 1000 1 0 0 0 1 2 3 4 Collector to emitter saturation voltage - V CE(sat) (V) Prospective Data Sheet T2250AB25E Issue P1 0 5 1 2 3 4 5 Gate resistance - R G(on) (Ω) Page 3 of 6 January, 2011 6 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T2250AB25E Figure 5 – Typical turn-off delay time vs. gate resistance esistance Figure 6 – Typical turn-on energy vs. collector current 6000 4 T2250AB25E Issue P1 V CE =1250V V GE =±15V IC =2250A C GE =100nF T j=125°C T2250AB25E Issue P1 V CE=1250V R G(on)=1.2Ω C GE=100nF V GE=±15V T j=125°C 5000 Turn-on energy per pulse - E(on)(mJ) Turn-off delay time - t d(off)(µs) 3 2 4000 V CE=900V 3000 V CE=600V 2000 1 1000 0 1 3 5 7 Gate resistance - R G(off) (Ω) 1000 1500 2000 2500 Collector current - IC (A) Figure 8 – Typical turn-off energy vs. collector current Figure 7 – Typical turn-on energy vs. di/dt 15000 0 500 9 5000 V CE=1250V V GE=±15V T j=125°C T2250AB25E Issue P1 R G(off)=3.3Ω C GE=100nF V GE=±15V Tj=125°C T2250AB25E Issue P1 4000 Turn-on energy per pulse - E(off)(mJ) Turn-on energy per pulse - E(on)(mJ) V CE=1250V 10000 IC =2250A 5000 IC =1200A 1000 2000 3000 4000 5000 Commutation rate - di/dt (A/µs) Prospective Data Sheet T2250AB25E Issue P1 V CE=1000V V CE=600V 2000 1000 0 0 3000 Page 4 of 6 0 500 1000 1500 2000 Collector current - IC (A) 2500 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T2250AB25E Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area 6000 5000 VGE=±15V Maximum LS=200nH Tj=125°C T2250AB25E Issue P1 RG(off)=3.3Ω CGE=100nF VGE=±15V Tj=125°C T2250AB25E Issue P1 5000 4000 IC=2250A 4000 Collector current - IC (A) Turn-off energy - Eoff (mJ) IC=1800A 3000 IC=1200A 2000 IC=600A 3000 2000 1000 1000 0 400 0 600 800 1000 1200 1400 0 Collector-emitter voltage - VCE (V) 500 1000 1500 2000 2500 3000 Gollector-emitter voltage - VCE (V) Figure 11 – Transient thermal impedance (IGBT) 0.1 Transient thermal impedance junction to sink (K/W) T2250AB25E Issue P1 Emitter Collector Double Side 0.01 0.001 0.0001 0.00001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Time (s) Prospective Data Sheet T2250AB25E Issue P1 Page 5 of 6 January, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T2250AB25E Outline Drawing & Ordering Information 107A375 ORDERING INFORMATION (Please quote 10 digit code as below) T2250 AB 25 E Fixed type Code Fixed Outline Code Voltage Grade VCES/100 25 Fixed format code Typical order code: T2250AB25E (VCES = 2500V) IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] WESTCODE An IXYS Company www.westcode.com www.ixys.net Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Prospective Data Sheet T2250AB25E Issue P1 Page 6 of 6 January, 2011