Distributed Gate Thyristor Type R1127NC32# to

Date:- 18 Feb, 2003
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R1127NC32# to R1127NC36#
(Old Type Number: D315CH21-36)
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
3200-3600
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
3200-3600
V
VRRM
Repetitive peak reverse voltage, (note 1)
3200-3600
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
3300-3700
V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
1127
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 2)
760
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 3)
448
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
2247
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
1895
A
ITSM
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
12.8
kA
ITSM2
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
14.1
2
I t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
2
I t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
It
It
(di/dt)cr
2
2
kA
819×10
3
As
2
994×10
3
As
2
Critical rate of rise of on-state current (repetitive), (Note 6)
1000
A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/µs
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
5
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
Page 1 of 12
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
-
2.42
ITM=2000A
V
VTM
Maximum peak on-state voltage
-
-
3.05
ITM=3380A
V
VT0
Threshold voltage
-
-
1.5
V
rT
Slope resistance
-
-
0.474
mΩ
200
-
-
(dv/dt)cr Critical rate of rise of off-state voltage
VD=80% VDRM, Linear ramp, Gate o/c
V/µs
IDRM
Peak off-state current
-
-
100
Rated VDRM
mA
IRRM
Peak reverse current
-
-
100
Rated VRRM
mA
VGT
Gate trigger voltage
-
-
3.0
IGT
Gate trigger current
-
-
300
VGD
Gate non-trigger voltage
-
-
0.25
Rated VDRM
IH
Holding current
-
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.8
1.6
tgt
Turn-on time
-
2.0
3.0
VD=67% VDRM, ITM=1000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
Qrr
Recovered charge
-
3500
-
Qra
Recovered charge, 50% Chord
-
1500
1800
Irm
Reverse recovery current
-
315
-
trr
Reverse recovery time
-
9.5
-
120
-
200
160
-
250
-
-
0.022
Double side cooled
K/W
-
-
0.044
Single side cooled
K/W
19
-
26
kN
-
510
-
g
tq
Turn-off time (note 2)
RthJK
Thermal resistance, junction to heatsink
F
Mounting force
Wt
Weight
Tj=25°C
V
VD=10V, IT=3A
mA
V
µC
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
Page 2 of 12
A
µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
Notes:1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
µC
February, 2003
µs
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
V
3200
3400
3600
Voltage Grade
32
34
36
VRSM
V
3300
3500
3700
VD VR
DC V
1800
1850
1900
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
Page 3 of 12
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f
max
=
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) )
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
150 µs
(ii) Qrr is based on a 150µs integration time i.e.
Qrr =
∫i
rr
.dt
0
(iii)
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
K Factor =
Page 4 of 12
t1
t2
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
TSINK ( new ) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK ( new ) = TSINK (original ) − (E ⋅ Rth ⋅ f )
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 ⋅
Vr
CS ⋅ di dt
Where:
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
Vr
CS
R
= Commutating source voltage
= Snubber capacitance
= Snubber resistance
Page 5 of 12
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established V0 and rs tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
1.397424
3.670164
B
0.3566004
-0.4527852
-4
-4
C
7.0266×10
2.91913×10
D
-0.0665837
0.03585227
16.2 D.C. Thermal Impedance Calculation
−t

τ
rt = ∑ rp ⋅ 1 − e p

p =1

p=n




Where p = 1 to n, n is the number of terms in the series.
t
rt
rp
τp
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of pth term.
Time Constant of rth term.
D.C. Single Side Cooled
Term
1
2
3
-3
4
-3
-3
rp
0.0130425
6.2957×10
2.35655×10
2.23408×10
τp
1.53109
0.165647
0.0207267
3.4714×10
-3
D.C. Double Side Cooled
Term
1
2
3
rp
0.03517957
5.171738×10
τp
6.431644
0.5234892
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
-3
Page 6 of 12
4
-3
-3
5.107098×10
3.198402×10
0.08301891
5.032106×10
-3
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
0.1
R1127NC32#-36#
Issue 2
Tj = 25°C
R1127NC32#-36#
Issue 2
SSC 0.044K/W
Transient Thermal Impedance - Z(th)t (K/W)
Instantaneous on-state current - IT (A)
Tj = 125°C
1000
100
0
1
2
3
4
DSC 0.022K/W
0.01
0.001
0.0001
0.0001
5
Instantaneous on-state voltage - VT (V)
Figure 3 - Gate characteristics - Trigger limits
0.001
0.01
0.1
Time (s)
1
10
100
`
Figure 4 - Gate characteristics - Power curves
20
6
R1127NC32#-36#
Issue 2
Tj=25°C
R1127NC32#-36#
Issue 2
Tj=25°C
18
5
14
Max VG dc
4
Gate Trigger Voltage - V GT (V)
Gate Trigger Voltage - V GT (V)
16
IGT, VGT
3
2
Max VG dc
12
10
8
PG Max 30W dc
-40°C
-10°C
125°C
25°C
6
PG 5W dc
4
1
Min VG dc
IGD, VGD
2
0
0
Min VG dc
0
0.25
0.5
0.75
0
1
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Page 7 of 12
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
10000
10000
R1127NC32#-36#
Issue 2
R1127NC32#-36#
Issue 2
Tj = 125°C
Tj = 125°C
2000A
1500A
Recovered charge - Qra (µC)
Total recovered charge - Qrr (µC)
1000A
500A
2000A
1500A
1000A
500A
1000
1000
10
100
1000
10
Commutation rate - di/dt (A/µs)
100
1000
Commutation rate - di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
100
1000
R1127NC32#-36#
Issue 2
2000A
1500A
1000A
500A
R1127NC32#-36#
Issue 2
Tj = 125°C
Reverse recovery time - trr (µs)
Reverse recovery current - Irm (A)
Tj = 125°C
10
2000A
1500A
1000A
500A
1
100
10
100
10
1000
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Page 8 of 12
February, 2003
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Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Figure 9 – Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
10
1.00E+03
R1127NC32#-36#
Issue 2
Snubber
0.5µF, 6.8 Ohms
Tj=125°C
2000A
1500A
Vrm = 67%VRRM
1000A
Energy per pulse - Er (J)
Tj = 125°C
R1127NC32#-36#
Issue 2
1.00E+02
Energy per pulse (J)
500A
1.00E+01
5kA
3kA
1.00E+00
2kA
1kA
1.00E-01
500A
250A
1.00E-02
1.00E-05
1
10
100
Commutation rate - di/dt (A/µs)
1000
Figure 11 - Sine wave frequency ratings
1.00E+05
1.00E-04
1.00E-03
Figure 12 - Sine wave frequency ratings
1.00E+05
R1127NC32#-36#
Issue 2
R1127NC32#-36#
Issue 2
THs=55°C
500A
1.00E-02
Pulse width (s)
THs=85°C
100% Duty Cycle
500A
1.00E+04
1kA
100% Duty Cycle
1.00E+04
1kA
1.00E+03
Frequency (Hz)
Frequency (Hz)
2kA
3kA
2kA
1.00E+03
3kA
5kA
1.00E+02
1.00E+02
1.00E+01
1.00E-05
1.00E+01
1.00E-05
5kA
1.00E-04
1.00E-03
1.00E-02
Pulse Width (s)
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 9 of 12
February, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
R1127NC32#-36#
Issue 2
R1127NC32#-36#
Issue 2
di/dt=500A/µs
di/dt=100A/µs
250A
THs=55°C
THs=55°C
500A
1.00E+04
500A
100% Duty Cycle
1kA
1.00E+04
100% Duty Cycle
1kA
Frequency (Hz)
Frequency (Hz)
2kA
3kA
1.00E+03
5kA
1.00E+02
1.00E+03
3kA
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
2kA
5kA
1.00E+01
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
Figure 15 - Square wave frequency ratings
1.00E+05
1.00E+05
R1127NC32#-36#
Issue 2
di/dt=500A/µs
di/dt=100A/µs
THs=85°C
THs=85°C
250A
100% Duty Cycle
1.00E+04
1.00E-02
Figure 16 - Square wave frequency ratings
R1127NC32#-36#
Issue 2
250A
1.00E-03
Pulse width (s)
1.00E+04
500A
500A
1kA
100% Duty Cycle
1kA
Frequency (Hz)
Frequency (Hz)
1.00E+03
2kA
1.00E+03
3kA
2kA
1.00E+02
3kA
5kA
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
1.00E+00
1.00E-05
5kA
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 10 of 12
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Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E+03
1.00E+03
R1127NC32#-36#
Issue 2
di/dt=100A/µs
R1127NC32#-36#
Issue 2
di/dt=500A/µs
Tj=125°C
Tj=125°C
1.00E+02
1.00E+02
1.00E+01
5kA
3kA
1.00E+00
1.00E+01
Energy per pulse (J)
Energy per pulse (J)
5kA
3kA
2kA
2kA
1.00E+00
1kA
500A
250A
1kA
1.00E-01
1.00E-01
500A
250A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
2
Figure 19 - Maximum surge and I t Ratings
Gate may temporarily lose control of conduction angle
1.00E+07
R1127NC32#-36#
Issue 2
Tj (initial) = 125°C
2
I t: VRRM≤10V
I2t: 60% VRRM
1.00E+06
10000
ITSM: VRRM≤10V
Maximum I2t (A2s)
Total peak half sine surge current - ITSM (A)
100000
ITSM: 60% VRRM
1.00E+05
1000
1
3
5
10
Duration of surge (ms)
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
1
5
10
50 100
Duration of surge (cycles @ 50Hz)
Page 11 of 12
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WESTCODE An IXYS Company
Distributed Gate Thyristor Types R1127NC32# to R1127NC36#
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
R1127
NC
♦♦
#
Fixed
Type Code
Fixed
Outline Code
Fixed Voltage Code
VDRM/100
32-36
tq Code
S=160µs, T=200µs, V=250µs
Typical order code: R1127NC34S – 3400V VDRM, 160µs tq, 27.7mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: [email protected],com
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: [email protected]
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: [email protected]
www.westcode.com
www.ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior
notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Type R1127NC32# to R1127NC36# Issue 2
Page 12 of 12
February, 2003