Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC(DC) Continuous DC collector current, IGBT 1200 A ICRM Repetitive peak collector current, tp=1ms, IGBT 2400 A IECO Maximum reverse emitter current, tp=100µs, (note 2 & 3) 1200 A PMAX Maximum power dissipation, IGBT (note 2) 12.5 kW Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC 2) Tsink = 25°C, double side cooled 3) The use of an anti-parallel diode is recommended Provisional Data Sheet T1200EB45E Issue 1 Page 1 of 6 October, 2009 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T1200EB45E Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS - 2.8 3.2 IC =1200A, VGE = 15V, Tj = 25°C V - 3.6 4.1 IC = 1200A, VGE = 15V V Threshold voltage - - 1.69 rT Slope resistance - - 1.97 VGE(TH) Gate threshold voltage - 5.3 - VCE = VGE, IC = 125mA V ICES Collector – emitter cut-off current 20 50 VCE = VCES, VGE = 0V mA IGES Gate leakage current - - ±15 VGE = ±20V µA Cies Input capacitance - 200 - VCE = 25V, VGE = 0V, f = 1MHz nF td(on) Turn-on delay time - 1.8 - tr(V) Rise time - 3.0 - VCE(sat) Collector – emitter saturation voltage VT0 Qg(on) Turn-on gate charge - 12 - Eon Turn-on energy - 5.7 - td(off) Turn-off delay time tf Qg(off) V Current range: 500 – 1500A mΩ µs µs IC =1200A, VCE =2800V µC VGE = ±15V, Ls=250nH J Rg(ON)= 3.3Ω, Rg(OFF)=3.3Ω, CGE=133nF. Freewheel diode type E1500VF450. - 1.6 - µs Fall time - 2.2 - Turn-off gate charge - 10 - µC Eoff Turn-off energy - 5.1 - J ISC Short circuit current - 4750 - MIN TYP MAX - - µs (Note 3) VGE=+15V, VCC=2800V, VCEmax≤VCES, tp≤10µs A Thermal Characteristics PARAMETER RthJK Thermal resistance junction to sink, IGBT F Mounting force Wt Weight TEST CONDITIONS UNITS 8.0 Double side cooled K/kW - - 12.5 Collector side cooled K/kW - - 23.3 Emitter side cooled K/kW 25 - 35 - 1.2 - Note 2 kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements. 3) CGE is additional gate - emitter capacitance added to output of gate drive circuit. Provisional Data Sheet T1200EB45E Issue 1 Page 2 of 6 October, 2009 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T1200EB45E Curves Figure 1 – Typical collector-emitter saturation voltage characteristics Figure 2 – Typical output characteristic 10000 3000 T1200EB45E AD Issue 1 Tj =25°C T1200EB45E AD Issue 1 VGE = +15V Tj =25°C Collector current - Ic(A) Collector current - Ic(A) 2000 Tj =125°C 1000 VGE = 20V VGE = 17V VGE = 15V VGE = 13V VGE = 11V 1000 100 0 0 1 2 3 4 5 6 0 Collector to emitter saturation voltage - VCE(SAT) (V) 1 2 3 4 5 6 Collector to emitter saturation voltage - VCE(SAT) (V) Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 3000 6 T1200EB45E AD Issue 1 Tj =125°C T1200EB45E AD Issue 1 VCE=2800V VGE=±15V CGE=133nF Tj=125°C 5 IC=1200A IC=800A Turn-on delay time - td(on)(µs) Collector current - I c(A) 2000 VGE = 20V VGE = 17V VGE = 15V VGE = 13V VGE = 11V 1000 4 3 2 0 1 0 1 2 3 4 5 6 7 2 Collector to emitter saturation voltage - VCE(SAT) (V) Provisional Data Sheet T1200EB45E Issue 1 4 6 8 10 12 14 16 Gate resistance - RG(on) (Ω) Page 3 of 6 October, 2009 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T1200EB45E Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current 3.5 6000 T1200EB45E AD Issue 1 VCE=2800V VGE=±15V CGE=133nF Tj=125°C IC=1200A Turn-on energy per pulse - E (on)(mJ) Turn-off delay time - td(off)(µs) 3 T1200EB45E AD Issue 1 RG(on)=3.3Ω CGE=133nF VGE=±15V 5000 Tj=125°C IC=800A 2.5 2 VCE=3000V 4000 VCE=2000V 3000 VCE=1000V 2000 1.5 1000 1 2 4 6 8 10 12 14 0 16 0 Gate resistance - RG(off) (Ω) 1000 1500 Figure 8 – Typical turn-off energy vs. collector current Figure 7 – Typical turn-on energy vs. di/dt 6000 15000 T1200EB45E AD Issue 1 VCE=2800V VGE=±15V Tj=125°C T1200EB45E AD Issue 1 RG(on)=3.3Ω CGE=133nF VGE=±15V Tj=125°C 5000 Turn-on energy per pulse - E(off)(mJ) IC=1200A Turn-on energy per pulse - E (on)(mJ) 500 Collector current - IC (A) 10000 IC=800A 5000 VCE=3000V 4000 VCE=2000V 3000 2000 VCE=1000V 1000 0 0 0 1000 2000 3000 500 1000 1500 Collector current - IC (A) Commutation rate - di/dt (A/µs) Provisional Data Sheet T1200EB45E Issue 1 0 Page 4 of 6 October, 2009 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T1200EB45E Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area 6000 3000 T1200EB45E AD Issue 1 RG(off)=3.3Ω CGE=133nF VGE=±15V 5000 Tj=125°C 2500 IC=1200A 2000 Collector current - I C (A) 4000 Turn-off energy - Eoff (mJ) T1200EB45E AD Issue 1 VGE=±15V Maximum Ls=250nH Tj=125°C IC=1000A 3000 IC=750A 2000 1500 1000 IC=400A 1000 0 500 500 0 1000 1500 2000 2500 3000 3500 0 1000 Collector-emitter voltage - VCE (V) 2000 3000 4000 5000 Gollector-emitter voltage - VCE (V) Figure 11 – Transient thermal impedance 0.1 Transient thermal impedance junction to sink (K/W) T1200EB45E AD Issue 1 Emitter Collector Double Side 0.01 0.001 0.0001 0.00001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Time (s) Provisional Data Sheet T1200EB45E Issue 1 Page 5 of 6 October, 2009 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T1200EB45E Outline Drawing & Ordering Information 101A340 ORDERING INFORMATION T1200 Fixed type Code (Please quote 10 digit code as below)\ EB 45 E Fixed Outline Code Voltage Grade VCES/100 45 Fixed format code Typical order code: T1200EB45E (VCES = 4500V) IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] WESTCODE An IXYS Company www.westcode.com www.ixys.com Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode,com IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Provisional Data Sheet T1200EB45E Issue 1 Page 6 of 6 October, 2009