Product Nomenclature Diode Dice C-DWEP 69-12 (Sample) A3 Packing method C T W Single dice in trays, electrically tested Dice in wafers, unsawed, electrically tested, inked bad die Dice in wafers on foil, sawed, electrically tested, inked bad die Die function D Silicon rectifier diodes W Unpackaged die Process characteristic E F L S Super fast diode Fast diode, trr = 1 ms Super fast diode (low leakage current) Mixed PN/Schottky-Diode, HiPerFRED P N Planar passivated die, inverse polarity, anode upside Planar passivated die, normal polarity, cathode upside 69 -12 Current rating of die in amperes Voltage class, 12 = 1200 V Breakover Diode Dice C-BWP 1-10 (Sample) Packing method C T W Dice, single in trays, electrically tested Dice in wafers, unsawed, electrically tested, inked bad die Dice in wafers on foil, sawed, electrically tested, inked bad die B Breakover diode W Unpackaged die P Planar passivated die (cathode upside) 1 Current rating of die in amperes -10 Voltage class, 10 = 1000 V Discrete Rectifier Diodes DSAI 35-16A (Sample) DS Silicon rectifier diode (anode = housing) A D E S P Avalanche characteristic Fast high voltage rectifier diode Fast Recovery Epitaxial Diode (FRED) Schottky diodes Double diode (phase leg) I K P Inverse polarity Double diode (common cathode) Inverse polarity (cathode = housing) 35 Current rating of die in amperes -16 Voltage class, 16 = 1600 V A Version A (see drawing) © 1999 IXYS All rights reserved A3 - 1 Product Nomenclature Discrete FRED DSEI 2x61-12B (Sample) DS Silicon rectifier diode E S A3 Fast Recovery Epitaxial Diode (FRED) Schottky diode I P Standard FRED HiPerFREDTM 2x Two single diodes in one housing 61 Current rating of die in amperes -12 Voltage class, 12 = 1200 V B Version B (see drawing) Thyristor Dice W-CWP 55-12/18 (Sample) Packing method W C T Dice in wafers on foil, sawed, electrically tested, inked bad die Dice, single in trays, electrically tested Dice in wafers on foil, sawed, electrically tested, inked bad die Die function C SCR W Unpackaged die Process characteristic P Planar passivated die (cathode upside) 55 Current rating of die in amperes 12/18 Voltage class, 12/18 = 1200 to 1800 V Discrete Thyristors CS 35-12io4 (Sample) CS SCR 35 Current rating of thyristor in amperes -12 Voltage class, 12 = 1200 V i Critical dv/dt-class, i ³ 1000 V/ms g > 200 V/ms, h > 500 V/ms, i >1000 V/ms, z = typ. (See data sheet for values) d > 20 V/ms, Turn-off time tq (DIN 41787), o = typ. (See data sheet for values) y < 50 V/ms, x < 40 V/ms, w < 30 V/ms, v < 25 V/ms, p < 15 V/ms, t < 12 V/ms, s < 10 V/ms, r < 8 V/ms o 4 u < 20 V/ms, Version 4 © 1999 IXYS All rights reserved A3 - 2 Product Nomenclature Single and Three Phase AC Controller Modules MMO 75-16io1 (Sample) M V Module Epoxy molded bridge M L W A3 Single phase bridge, controlled (two thyristors) Single phase bridge, half-controlled (thyristor/diode) Three phase bridge, controlled O No meaning. Reserved for future function 75 Current rating (eff), 75 = 75 A~ -16 Voltage class, 16 = 1600 V Critical dv/dt-class, i > 1000 V/ms i Turn-off time tq, o = typ. (See data sheet for value) o 1 Version 1 Thyristor/Diode Modules MCC 312-16io1 (Sample) M Module C D SCR Diode C D O SCR Diode No meaning. Reserved for future function 312 Current rating of module in amperes -16 Voltage class, 16 = 1600 V i N Critical dv/dt-class, i = 1000 V/µs; l = 2000 V/µs Standard diode Turn-off time tq, o = typ. (See data sheet for value) o 1 8 Version 1 (thyristor: aux. cathode and gate; diodes: version only) Version 8 (gate only) FRED Modules MEA 160-06DA (Sample) M Module E P FRED HiPerFREDTM A E K O Double diode (common anode) Double diode (phase leg) Double diode (common cathode) Single diode 160 Current rating of module in amperes -06 Voltage class, 06 = 600 V D Fast diode with defined trr A Version A © 1999 IXYS All rights reserved A3 - 3 Product Nomenclature Single and Three Phase Rectifier Bridge VBO 20-16NO1(Sample) V A3 Epoxy molded bridge Single phase bridge, non-controlled Single phase bridge, asymetrical, half-controlled Single phase bridge, symetrical, half-controlled Single phase bridge, controlled Three phase bridge, non-controlled Three phase bridge, half-controlled Special circuit Three phase bridge, controlled Power module with MOSFET Power module with IGBT Three phase bridge B G H K U V E T UM UG W O B C F Z E Y Without function, dummy Braking system (IGBT/FRED) Separate thyristor Free-wheeling diode Thyristors, cathodes connected Super Fast Diode (FRED) Special circuit B D W Braking system (IGBT/FRED) Additional diode AC controller output 20 Current rating of bridge in amperes -16 Voltage class, 16 = 1600 V N A g Standard diode Avalanche diode Critical dv/dt (see thyristors) Turn-off time tq (DIN 41787) O 1 Version 1 High Voltage Rectifier UGE 0421 AY4 (Sample) U High voltage rectifier, U-Series G Non-controlled rectifier E B D One way circuit Single phase bridge Three phase bridge Code for Number of semiconductors 0 1 2 1-4 5-6 7-12 4 Number code for forward current in amperes 2 < 12 A; 3 < 16 A, 1 < 3 A; 2 4 < 33 A etc. Number code for type of built-in semiconductors Number code for voltage 1 > 1 kV - 2 kV, 1 A 2 > 2 kV - 3 kV etc. A = Avalanche Diode Y4 Housing type (see drawing) Y4 = round housing, A-N = plastic housing © 1999 IXYS All rights reserved A3 - 4 Product Nomenclature IGBT and MOSFET Dice W-IXSD 40N60A (Sample) W T C Dice in wafers on foil, sawed, electrically tested, inked bad die Dice in wafers, unsawed, electrically tested, inked bad die Dice, single in trays, electrically tested IX A3 IXYS Die function S G F T B L V E M IGBT with SCSOA capability Fast IGBT HiPerFETTM Power MOSFET Standard power MOSFET High voltage BIMOSFET IGBT with SCSOA capability Standard IGBT HiPerFETTM Power MOSFET Standard power MOSFET D Unpackaged die 40 Current rating, 40 = 40 A IGBT = Value at TC = 90°C MOSFET = Value at TC = 25°C N P N-channel type P-channel type 60 Voltage class, 60 = 600 V A Version Standard MOSFET: A IGBT: no letter A B C = prime RDS(on) = low VCE(sat) = fast switching = high speed type = lightspeed type (first generation, not for new designs) (first generation, not for new designs) (for medium speed circuits) (for high speed circuits) IGBT and MOSFET Modules MII 200-12S4 (Sample) M V Module Module I C D M W IGBT with SCSOA capability Thyristor Diode MOSFET Three phase bridge I C D E K M O IGBT with SCSOA capability Thyristor Diode IGBT (ISOSMARTTM) Common cathode MOSFET Unspecified. Reserved for future function Current rating 200 = 200 A (TC = 25°C) 200 -12 Voltage class, 12 = 1200 V S F G T High speed type, IGBT HiPerFET, MOSFET, n-channel Low VCE(sat) type, IGBT Standard MOSFET, n-channel 4 Version 4 © 1999 IXYS All rights reserved A3 - 5 Product Nomenclature Discrete IGBT and MOSFET IXSK 50N60AU1 (Sample) IX IXYS S G F T B L V E M D P A3 IGBT with SCSOA capability Fast IGBT HiPerFETTM Power MOSFET Standard power MOSFET High volatage BIMOSFET IGBT with SCSOA capability Standard IGBT HiPerFETTM Power MOSFET Standard power MOSFET IGBT with SCSOA capability MOS and IGBT combination Housing type K H M N P U A X TO-264 TO-247 TO-204 (TO-3) SOT-227 B (miniBLOC) TO-220 TO-251 (DPAK) TO-263 (D² PAK) PLUS 247 (TO-247 without mounting hole) Current rating, 50 = 50 A (MOSFET = value at TC = 25°C; IGBT = value at TC = 90°C) 50 N P N-channel type P-channel type 60 Voltage class, 60 = 600 V D1 U1 U2 U3 With With With With A integrated HiPerFREDTM (anti-parallel) integrated FRED (anti-parallel) integrated FRED (boost configuration) integrated FRED (buck configuration) Version Standard MOSFET: A IGBT: no letter A B C S = = = = = prime RDS(on) low VCE(sat) (first generation, not for new designs) fast switching (first generation, not for new designs) high speed type (for medium speed circuits) lightspeed type (for high speed circuits) SMD Version Discrete BOD IXBOD 1-42RD (Sample) IX IXYS BOD Breakover diode 1 Version -06 Voltage class, 06 = 600 V R Printed circuit board mounting D BOD protected from reverse voltage by a fast recovery diode © 1999 IXYS All rights reserved A3 - 6