Symbols and Terms a Acceleration BVCES BVDSS Collector emitter breakdown voltage Drain source breakdown voltage Cies, Ciss Coes, Coss Cres, Crss Input capacitance Output capacitance Reverse transfer (Miller) capacitance d dA di/dt, -di/dt (di/dt)cr diF/dt, -diF/dt dS dv/dt (dv/dt)cr Duty cycle Strike distance through air Rate of change of current Critical rate of rise of current Rate of change of forward current Creep distance on surface Rate of rise of voltage Critical rate of rise of voltage E AR EAS E off Eon Repetitive avalanche energy Non-repetitive avalanche energy Turn-off energy per pulse Turn-on energy per pulse F(mounting) on Required force to mount hole-less discretes heat sink gfs Forward transconductance IAR IAVM IBO IC (on) IC IC25 IC90 ICES ICM ID IDD IDD0 ID(cont) ID25 IDAV ID(AV)M IDM IDRM ID(RMS) IDSS IF, IT IFM IFAV Repetitive avalanche current Maximum average forward current Breakover current Short circuit current Collector current Continuous DC collector current at TC = 25°C Continuous DC collector current at TC = 90°C Collector emitter leakage current Maximum pulsed collector current Drain current Module supply current, operating mode Module supply current, standby mode Continuous drain current Continuous drain current at TC = 25°C Average DC output current Maximum average DC output current Maximum pulsed drain current Maximum repetitive off-state current RMS output current Drain source leakage current Forward current Maximum forward current Average forward current XX IXAN0054 IF(AV)M, IT(AV)M IFLT IFRM IF(RMS), IT(RMS) IFSM, ITSM IG, IGT IGD IGES IH IIN(H) IIN(L) IISOL IL IR IRM IRMS IRRM IS ISM I²t, ∫i²dt ITSM Maximum average forward current Sink current of fault terminal Maximum repetitive forward current RMS forward current Maximum surge forward current Trigger gate current Non-trigger gate current Gate emitter leakage current Holding current Signal input current (high level) Signal input current (low level) RMS current for isolation test Latching current Reverse current Maximum reverse recovery current RMS current Maximum repetitive reverse current Continuous source current Maximum pulsed source current I²t value for fusing Maximum surge on-state current Kf Kp KT Characteristic factor Coeff. for energy per pulse Ep (material constant) Temperature coefficient of VBO L Series stray inductance Md Mounting torque PC PD PGAV PG(AV)M PGM PRSM PT, Ptot Collector power dissipation Power dissipation Average gate power dissipation Maximum average gate power dissipation Maximum gate power dissipation Maximum surge reverse power dissipation Total power dissipation Qg Qgc Qgd Qge Qgs Qr QRM QS Total gate charge Gate collector (Miller) charge Gate drain (Miller) charge Gate emitter charge Gate source charge Reverse recovery charge Reverse recovery charge (intrinsic diode) Recovered charge to IRM RBSOA R DS(on) RFI RG Reverse Bias Safe Operating Area Static drain source on resistance Radio frequency interference (= EMI) Gate resistance Symbols and Terms RGE rT RthCK; RthCH R thJA RthJC RthJK; RthJH RthJS R thJW R thKA Gate emitter resistance Slope resistance (for power loss calculation only) Thermal resistance case to heatsink Thermal resistance junction to ambient Thermal resistance junction to case Thermal resistance junction to heatsink Thermal resistance junction to heatsink Thermal resistance junction to water Thermal resistance heatsink to ambient SCSOA Short Circuit Safe Operating Area Tamb, TA TC, Tcase t d(off) t d(on) tfi tfr tFLT tgd TJ, TVJ TJM, TVJM TK,TH, TS TL TS(max) Tstg tP tq tr trr trv tSC Ambient (cooling medium) temperature Case temperature Turn-off delay time Turn-on delay time Current fall time (inductive load) Forward recovery time Overcurrent or short circuit trip delay time Gate controlled delay time Virtual junction temperature Maximum virtual junction temperature Heatsink temperature Lead temperature Maximum allowable heatsink temperature Storage temperature Pulse time Turn-off time Current rise time Reverse recovery time Rise time of collector emitter voltage Short circuit duration VBO VCE VCE(sat) VCE(sat)FLT Breakover voltage Collector emitter voltage Collector emitter saturation voltage Collector emitter saturation voltage to indicate fault Collector emitter clamp voltage on chip level Collector emitter voltage Collector gate voltage Module supply voltage Module supply voltage without fault Drain gate voltage Maximum repetitive forward blocking voltage Drain source voltage Maximum non-repetitive forward blocking voltage Drain source breakdown voltage Various construction designs of products VCEK VCES VCGR V DD VDD FLT VDGR V DRM VDS VDSM VDSS Version IXAN0054 VF VFLT VFR VGD VGE VGE(th) VGEM VGES VGS VGS(th) VGSM VGT VH VIN VIN(H) VIN(L) VISOL VR VRES VRGM V RRM VRSM VSD VT VT0 Forward voltage Voltage at fault terminal Forward recovery voltage Gate non-trigger voltage Gate emitter voltage Gate emitter threshold voltage Maximum transient collector gate voltage Maximum DC gate voltage Gate source voltage Gate threshold voltage Maximum transient gate source voltage Gate trigger voltage Holding voltage Input control voltage Input voltage threshold for IGBT turn-on Input voltage threshold for IGBT turn-off Isolation voltage Reverse voltage Input voltage threshold for Reset = active Maximum reverse gate voltage Maximum repetitive reverse voltage Maximum non-repetitive reverse voltage Forward voltage drop Forward voltage Threshold voltage (for power loss calculation) ZthJC ZthJK, ZthJH Transient thermal impedance junction to case Transient thermal impedance junction to heatsink Semiconductor Catalog, Edition 2006 © IXYS Corporation 2006 All Rights reserved Note As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented with components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms of delivery and rights to change design or specifications are reserved. Changes have been made to earlier published specifications. The data herein supersedes all previously published informations. Life support applications IXYS products used in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury must be expressly authorized for such purposes. XXI