WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC(DC) DC collector current, IGBT 360 A ICRM Repetitive peak collector current, tp=1ms, IGBT 720 A IF(DC) Continuous DC forward current, Diode 360 A IFRM Repetitive peak forward current, tp=1ms, Diode 720 A IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) 2850 A IFSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) 3130 A PMAX Maximum power dissipation, IGBT (Note 2) 1.8 KW (di/dt)cr Critical diode di/dt (note 3) 1000 A/µs Tj Operating temperature range. -40 to +125 °C Tstg Storage temperature range. -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial. Prospective Data Sheet T0360NB25A Issue P1 Page 1 of 7 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0360NB25A Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS - 2.10 2.40 IC = 360A, VGE = 15V, Tj = 25°C V - 2.95 3.25 IC = 360A, VGE = 15V V Threshold voltage - - 1.32 rT Slope resistance - - 5.37 VGE(TH) Gate threshold voltage - 5.8 6.3 VCE = VGE, IC = 30mA V ICES Collector – emitter cut-off current 5 10 VCE = VCES, VGE = 0V mA IGES Gate leakage current - 2 ±7 VGE = ±20V µA Cies Input capacitance - 50 - VCE = 25V, VGE = 0V, f = 1MHz nF td(on) Turn-on delay time - 0.95 - tr(V) Rise time - 2 - IC =360A, VCE =1250V, di/dt=700A/µs µs Qg(on) Turn-on gate charge - 3 - VGE = ±15V, Ls=200nH µC Eon Turn-on energy - 0.85 - Rg(ON)= 7.5Ω, Rg(OFF)=18Ω, CGE=14.7nF J td(off) Turn-off delay time - 1.3 - Integral diode used as freewheel diode µs tf(I) Fall time - 7.5 - (Note 3 & 4) µs Qg(off) Turn-off gate charge - 2.5 - Eoff Turn-off energy - 0.6 - VCE(sat) Collector – emitter saturation voltage VT0 ISC Short circuit current V Current range: 120 – 360A mΩ µs µC J VGE=+15V, VCC=1250V, VCEmax≤VCES, tp≤10µs - 1000 - MIN TYP MAX TEST CONDITIONS - 2.05 2.35 IF = 360A, Tj =25°C V - 2.25 2.55 IF = 360A V A Diode Characteristics PARAMETER UNITS VF Forward voltage VTo Threshold voltage - - 1.43 rT Slope resistance - - 3.11 Irm Peak reverse recovery current - 240 - Qrr Recovered charge - 320 - IF = 360A, Vr=1250V, di/dt=700A/µs, µC trr Reverse recovery time, 50% chord - 0.9 - VGE = -15V µs Er Reverse recovery energy - 0.3 - MIN TYP MAX TEST CONDITIONS UNITS - - 54.1 Double side cooled K/kW - - 84.3 Collector side cooled K/kW - - 152 Emitter side cooled K/kW - - 73 Double side cooled K/kW V Current range 120-360A mΩ A J Thermal Characteristics PARAMETER RthJK RthJK Thermal resistance junction to sink, IGBT Thermal resistance junction to sink, Diode - - 112 Cathode side cooled K/kW - - 210 Anode side cooled K/kW Note 2 F Mounting force 8 - 12 Wt Weight - 0.5 - kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements 3) CGE is additional gate – emitter capacitance added to output of gate drive 4) Figures 6 to 9 are obtained using integral diode as freewheeling diode Prospective Data Sheet T0360NB25A Issue P1 Page 2 of 7 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0360NB25A Curves Figure 1 – Typical collector-emitter saturation voltage characteristics Figure 2 – Typical output characteristic 1000 10000 T0360NB25A Issue P1 T0360NB25A Issue P1 V GE =+15V T j =25°C 800 25°C 125°C Collector current - Ic(A) Collector current - IC (A) 1000 100 600 400 10 V GE = 20V V GE = 17V V GE = 15V V GE = 12V V GE = 10V 200 1 0 0 1 2 3 4 5 6 7 8 0 Collector to emitter saturation voltage - V CE(sat) (V) 1 2 3 Collector to emitter saturation voltage - V CE(sat) (V) 4 Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 1000 4 V C E =1250V I C =360A V G E =±15V C G E =33nF T j =125°C T0360NB25A Issue P1 T j =125°C T0360N B 25A Issue P 1 360A 800 200A Turn-on delay time - td(on)(µs) Collector current - I c(A) 3 600 400 1 V GE = 20V V GE = 17V V GE = 15V V GE = 12V V GE = 10V 200 2 0 0 0 1 2 3 4 Collector to em itter saturation voltage - V CE(sat) (V) Prospective Data Sheet T0360NB25A Issue P1 5 0 5 10 15 20 25 30 G ate resistan ce - R G (on) (Ω ) Page 3 of 7 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0360NB25A Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current 1000 3 V CE=1250V V GE=±15V IC=360A C GE=14.7nF T j=125°C T0360NB25A Issue P1 T0360NB25A Issue P1 R G(on)=7.5Ω C GE=14.7nF V GE=±15V Tj=125°C Turn-on energy per pulse - E (on)(mJ) Turn-off delay time - td(off)(µs) 800 2 1 V CE=1250V V CE=900V 600 V CE=600V 400 200 0 0 5 10 15 20 25 30 35 40 45 0 100 Gate resistance - R G(off) (Ω) Figure 7 – Typical turn-on energy vs. di/dt 300 400 500 Figure 8 – Typical turn-off energy vs. collector current 2000 800 V CE=1250V V GE=±15V T j=125°C R G(off)=18Ω C GE=14.7nF V GE=±15V T j=125°C T0360TB25A Issue P1 1500 T0360NB25A Issue P1 V CE=1250V 600 Turn-on energy per pulse - E(off)(mJ) Turn-on energy per pulse - E(on)(mJ) 200 Collector current - IC (A) 1000 IC=360A V CE=1000V 400 V CE=600V 200 500 IC=200A 0 0 0 200 400 600 800 1000 1200 Commutation rate - di/dt (A/µs) Prospective Data Sheet T0360NB25A Issue P1 Page 4 of 7 0 100 200 300 Collector current - IC (A) 400 500 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0360NB25A Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area 1000 800 700 V GE=±15V Maximum LS=200nH Tj=125°C T0360NB25A Issue P1 RG(off)=18Ω C GE=14.7nF V GE=±15V Tj=125°C 800 IC=360A 600 T0360NB25A Issue P1 Collector current - IC (A) Turn-off energy - Eoff (mJ) IC=300A 500 IC=200A 400 IC=100A 300 600 400 200 200 100 0 400 0 600 800 1000 1200 1400 0 500 Collector-emitter voltage - V CE (V) Figure 11 – Typical diode forward characteristics 10000 1000 1500 2000 2500 3000 Gollector-emitter voltage - V CE (V) Figure 12 – Typical recovered charge 400 T0360NB25A Issue P1 T0360NB25A Issue P1 Tj=125°C IC =360A T j=25°C T j=125°C Typical recovered charge - Qrr (µC) Instantaneous forward current - I F (A) 1000 100 300 IC=200A 200 10 100 1 0 1 2 3 4 Instantaneous forward voltage - V F (V) Prospective Data Sheet T0360NB25A Issue P1 5 0 200 400 600 800 1000 1200 Commutation rate - di/dt (A/µs) Page 5 of 7 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0360NB25A Figure 13 – Typical reverse recovery current 400 Figure 14 – Typical reverse recovery time 3 T0360NB25A Issue P1 T0360NB25A Issue P1 T j=125°C T j=125°C 300 Typical reverse recovery time - trr (µs) Typical reverse recovery current - Irm (A) IC =360A IC =200A 200 2 1 IC =360A IC =200A 100 0 0 200 400 600 800 1000 1200 0 Commutation rate - di/dt (A/µs) 1 1000 1200 T0360NB25A Issue P1 0.1 Transient thermal impedance junction to sink (K/W) Transient thermal impedance junction to sink (K/W) 800 Anode Cathode Double Side Emitter Collector Double Side 0.01 0.001 0.0001 0.00001 0.00001 0.0001 600 Figure 16 – Transient thermal impedance (Diode) T0360NB25A Issue P1 0.1 400 Commutation rate - di/dt (A/µs) Figure 15 – Transient thermal impedance (IGBT) 1 200 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 0.00001 0.00001 0.0001 Prospective Data Sheet T0360NB25A Issue P1 0.001 0.01 0.1 1 10 100 Time (s) Time (s) Page 6 of 7 August, 2011 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T0360NB25A Outline Drawing & Ordering Information 171A107 ORDERING INFORMATION T0360 NB Fixed type Code Fixed Outline Code IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] (Please quote 10 digit code as below) 25 A Fixed format code Voltage Grade VCES/100 25 Typical order code: T0360NB25A (VCES = 2500V) WESTCODE An IXYS Company www.westcode.com www.ixys.net Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Prospective Data Sheet T0360NB25A Issue P1 Page 7 of 7 August, 2011