WESTCODE An Date:- 17 Oct, 2007 Data Sheet Issue:- 4 IXYS Company Distributed Gate Asymmetric Thyristor Type R3708FC40# to R3708FC45# (Old Type Number: R1386CH40-45) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 4000-4500 V VDSM Non-repetitive peak off-state voltage, (note 1) 4000-4500 V VRRM Repetitive peak reverse voltage, (note 1) 2500-3000 V VRSM Non-repetitive peak reverse voltage, (note 1) 2600-3100 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AV)M Maximum average on-state current, Tsink=55°C, (note 2) 3708 A IT(AV)M Maximum average on-state current. Tsink=85°C, (note 2) 2516 A IT(AV)M Maximum average on-state current. Tsink=85°C, (note 3) 1498 A IT(RMS) Nominal RMS on-state current, Tsink=25°C, (note 2) 7364 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 6275 A ITSM Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5) 50 A ITSM2 Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5) 55 2 I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5) 2 I t capacity for fusing tp=10ms, Vrm≤10V, (note 5) It It (di/dt)cr 2 2 Critical rate of rise of on-state current (note 6) A 12.50×10 6 As 15.13×10 6 As Single Shot 1000 Repetitive (50Hz, 60s) 500 Continuous (50Hz) 250 2 2 A/µs VRGM Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 4 W PGM Peak forward gate power 50 W Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 1 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.1 VT0 Threshold voltage - - 1.473 V rT Slope resistance - - 0.156 mΩ 200 - - (dv/dt)cr Critical rate of rise of off-state voltage ITM=4000A V VD=80% VDRM, Linear ramp, Gate o/c V/µs IDRM Peak off-state current - - 200 Rated VDRM mA IRRM Peak reverse current - - 200 Rated VRRM mA VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 600 VGD Gate non-trigger voltage - - 0.25 Rated VDRM IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time 0.8 2.0 tgt Turn-on time - 2.0 3.0 VD=67% VDRM, ITM=4000A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 8800 - Qra Recovered charge, 50% Chord - 4000 5100 Irm Reverse recovery current - 400 - trr Reverse recovery time - 20 - - 250 - - 300 - - - 0.0065 Double side cooled K/W - - 0.013 K/W 81 - 99 kN - 2.8 - kg tq Turn-off time (note 2) RthJK Thermal resistance, junction to heatsink (note 3) F Mounting force Wt Weight Tj=25°C V VD=10V, IT=3A mA V µC ITM=4000A, tp=2000µs, di/dt=60A/µs, Vr=100V Page 2 of 12 A µs ITM=4000A, tp=2000µs, di/dt=60A/µs, Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs ITM=4000A, tp=2000µs, di/dt=60A/µs, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs Single side cooled Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for details of tq codes. 3) For other clamp forces, please consult factory Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 µC October, 2007 µs WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 40 42 44 45 VDRM VDSM V 4000 4200 4400 4500 VRRM V 2500 2700 2900 3000 VRSM V 2600 2800 3000 3100 VD DC V 2000 2040 2080 2100 VR DC V 1500 1600 1700 1750 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 7.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 8.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 3 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# 9.0 Frequency Ratings The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings shown on page 1. 10.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 11.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 12.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv 13.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let RthJK be the steady-state d.c. thermal resistance (junction to sink) and TK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TK (max .) = 125 − (W AV ⋅ RthJK ) 14.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1 150 µs (ii) Qrr is based on a 150µs integration time i.e. Qrr = ∫i rr .dt 0 (iii) Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 K Factor = Page 4 of 12 t1 t2 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# 15.0 Reverse Recovery Loss 15.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TK ( new ) = TK ( original ) − E ⋅ (k + f ⋅ RthJK ) Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. RthJK = d.c. thermal resistance (°C/W). The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 15.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TK (new ) = TK (original ) − (E ⋅ Rth ⋅ f ) Where TK (new) is the required maximum heat sink temperature and TK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Where: Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Vr CS R = Commutating source voltage = Snubber capacitance = Snubber resistance Page 5 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# 16.0 Computer Modelling Parameters 16.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs VT, on page 7 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients A 4.678238 B -0.6578649 125°C Coefficients -4 A 2.18319094 B -0.1424507 -4 C -2.268674×10 C 1.179448×10 D 0.06585253 D 9.906199×10 -3 16.2 D.C. Thermal Impedance Calculation −t τ rt = ∑ rp ⋅ 1 − e p p =1 p=n Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Single Side Cooled Term 1 2 -3 3 -3 4 -4 -4 rp 3.424745×10 1.745273×10 8.532017×10 3.457329×10 τp 1.125391 0.1878348 0.02788979 8.430889×10 -3 D.C. Double Side Cooled Term 1 2 -3 3 -3 4 -3 -4 rp 8.375269×10 2.518437×10 1.193758×10 7.45432×10 τp 8.929845 0.4711304 0.08221244 0.01221961 Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 6 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Curves Figure 1 - On-state characteristics of Limit device 10000 Figure 2 - Transient thermal impedance 0.1 R3708FC40#-45# Issue 4 R3708FC40#-45# Issue 4 SSC 0.013K/W Transient Thermal Impedance - Z(th)t (K/W) Instantaneous on-state current - IT (A) 0.01 Tj = 125°C Tj = 25°C 1000 DSC 0.0065K/W 0.001 0.0001 100 1 1.5 2 2.5 0.00001 0.0001 3 Instantaneous on-state voltage - VT (V) 0.01 0.1 1 10 100 Time (s) Figure 3 - Gate characteristics - Trigger limits 8 0.001 Figure 4 - Gate characteristics - Power curves 20 R3708FC40#-45# Issue 4 Tj=25°C R3708FC40#-45# Issue 4 Tj=25°C 18 7 Max VG dc 16 6 Gate Trigger Voltage - VGT (V) Gate Trigger Voltage - VGT (V) 14 5 IGT, VGT 4 3 12 Max VG dc 10 PG Max 50W dc 8 -40°C -10°C 2 25°C 125°C 6 4 Min VG dc PG 4W dc 1 Min VG dc 2 IGD, VGD 0 0 0 0.25 0.5 0.75 1 1.25 0 1.5 Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Figure 5 - Total recovered charge, Qrr Figure 6 - Recovered charge, Qra (50% chord) 10000 100000 R3708FC40#-45# Issue 4 R3708FC40#-45# Issue 4 Tj = 125°C Tj = 125°C 6000A 4000A 1000A Recovered charge - Qra, 50% chord (µC) Total recovered charge - Qrr (µC) 2000A 6000A 4000A 2000A 1000A 10000 1000 1000 10 100 1000 10 Commutation rate - di/dt (A/µs) Figure 7 - Peak reverse recovery current, Irm 10000 100 Figure 8 - Maximum recovery time, trr (50% chord) 100 R3708FC40#-45# Issue 4 R3708FC40#-45# Issue 4 Tj = 125°C Reverse recovery time - trr, 50% chord (µs) Tj = 125°C Reverse recovery current - IRM (A) 1000 Commutation rate - di/dt (A/µs) 6000A 4000A 2000A 1000A 1000 6000A 4000A 2000A 1000A 10 1 100 10 100 10 1000 Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 100 1000 Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Page 8 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Figure 9 – Reverse recovery energy per pulse 10 Figure 10 - Sine wave energy per pulse 1.00E+03 R3708FC40#-45# Issue 4 Tj = 125°C Vr = 400V Tj=125°C Measured without snubber 1.00E+02 4000A 3000A 2000A 1000A Energy per pulse (J) Reverse energy per pulse - Er (J) R3708FC40#-45# Issue 4 1 1.00E+01 8000A 6000A 4000A 1.00E+00 2000A 1000A 1.00E-01 500A 1.00E-02 1.00E-05 0.1 10 100 1000 1.00E-04 Figure 11 - Sine wave frequency ratings 1.00E+05 1000A 1.00E-03 1.00E-02 Pulse width (s) Commutation rate - di/dt (A/µs) Figure 12 - Sine wave frequency ratings 1.00E+05 R3708FC40#-45# Issue 4 R3708FC40#-45# Issue 4 TK=55°C TK=85°C 1000A 100% Duty Cycle 1.00E+04 100% Duty Cycle 2000A 1.00E+04 4000A 1.00E+03 Frequency (Hz) Frequency (Hz) 2000A 6000A 8000A 1.00E+03 4000A 6000A 8000A 1.00E+02 1.00E+01 1.00E-05 1.00E+02 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Pulse Width (s) Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 9 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings 1.00E+05 1.00E+05 R3708FC40#-45# Issue 4 R3708FC40#-45# Issue 4 di/dt=100A/µs di/dt=100A/µs TK=55°C TK=85°C 1000A 2000A 100% Duty Cycle 100% Duty Cycle 1.00E+04 1.00E+04 2000A Frequency (Hz) Frequency (Hz) 4000A 6000A 1.00E+03 8000A 1.00E+02 4000A 1.00E+03 6000A 8000A 1.00E+02 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 15 - Square wave frequency ratings 1.00E+05 1.00E-04 Figure 16 - Square wave frequency ratings 1.00E+05 R3708FC40#-45# Issue 4 R3708FC40#-45# Issue 4 500A di/dt=500A/µs di/dt=500A/µs TK=85°C TK=55°C 1000A 100% Duty Cycle 100% Duty Cycle 1.00E+04 1.00E+04 1000A 2000A 4000A 1.00E+03 Frequency (Hz) Frequency (Hz) 2000A 6000A 8000A 1.00E+03 4000A 6000A 8000A 1.00E+02 1.00E+01 1.00E-05 1.00E+02 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Pulse width (s) Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 10 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Figure 17 - Square wave energy per pulse 1.00E+03 Figure 18 - Square wave energy per pulse 1.00E+03 R3708FC40#-45# Issue 4 R3708FC40#-45# Issue 4 di/dt=100A/µs di/dt=500A/µs Tj=125°C Tj=125°C 1.00E+02 1.00E+02 8000A 1.00E+01 Energy per pulse (J) Energy per pulse (J) 8000A 6000A 4000A 6000A 4000A 1.00E+00 1.00E+01 2000A 1000A 500A 1.00E+00 2000A 1.00E-01 1000A 1.00E-01 500A 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) 2 Figure 19 - Maximum surge and I t Ratings Gate may temporarily lose control of conduction angle 1.00E+09 R3708FC40#-45# Issue 4 Tj (initial) = 125°C 2 I t: VRRM≤10V 100000 1.00E+08 2 2 2 I t: 60% VRRM Maximum I t (A s) Total peak half sine surge current - ITSM (A) 1000000 ITSM: VRRM≤10V ITSM: 60% VRRM 10000 1000 1 3 5 10 Duration of surge (ms) Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 1 5 10 50 100 1.00E+07 1.00E+06 Duration of surge (cycles @ 50Hz) Page 11 of 12 October, 2007 WESTCODE An IXYS Company Distributed Gate Thyristor Types R3708FC40# to R3708FC45# Outline Drawing & Ordering Information ORDERING INFORMATION (Please quote 10 digit code as below) ♦♦ R3708 FC Fixed Type Code Fixed Outline Code ♦ tq Code V=250µs, W=300µs, X = 400µs Fixed Voltage Code VDRM/100 40-45 Typical order code: R3708FC42V – 4200V VDRM, 2700V VRRM 250µs tq, 37.7mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de WESTCODE An IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net IXYS Company www.westcode.com www.ixys.com Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode.com Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: WSI.sales@westcode.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types R3708FC40# to R3708FC45# Issue 4 Page 12 of 12 October, 2007

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