Date:- 6 Jul, 2004 Data Sheet Issue:- 1 Soft Recovery Diode Type M1022LC120 to M1022LC200 (Old Type No.: SM02-18CXC724) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, (note 1) 1200-2000 V VRSM Non-repetitive peak reverse voltage, (note 1) 1300-2100 V MAXIMUM LIMITS UNITS OTHER RATINGS IF(AVM) Maximum average forward current, Tsink=55°C, (note 2) 1022 A IF(AVM) Maximum average forward current. Tsink=100°C, (note 2) 467 A IF(AVM) Maximum average forward. Tsink=100°C, (note 3) 260 A IF(RMS) Nominal RMS forward current, Tsink=25°C, (note 2) 2060 A IF(d.c.) D.C. forward current, Tsink=25°C, (note 4) 1687 A IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5) 14.0 kA IFSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) 15.4 I t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5) It 2 I t capacity for fusing tp=10ms, VRM≤10V, (note 5) Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +125 °C It 2 kA 2 2 0.98×10 6 As 2 1.19×10 6 As 2 Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 1 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) - - 1.7 IFM=1400A - - 1.85 IFM=2050A UNITS VFM Maximum peak forward voltage VT0 Threshold voltage - - 1.24 V rT Slope resistance - - 0.33 mΩ VFRM Maximum forward recovery voltage - - 15 di/dt = 1000A/µs, Tj=25°C - - 40 di/dt = 1000A/µs IRRM Peak reverse current - - 100 Rated VRRM Qrr Recovered charge - 375 - Qra Recovered charge, 50% Chord - 140 175 Irm Reverse recovery current - 95 - trr Reverse recovery time, 50% Chord - 3.0 - RthJK Thermal resistance, junction to heatsink - - 0.033 Double side cooled - - 0.066 Single side cooled F Mounting force 10 - 20 kN Wt Weight - 340 - g V V mA µC µC IFM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, 50% Chord. A µs K/W Notes:1) Unless otherwise indicated Tj=125°C. Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 2 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade VRSM (V) 1300 1500 1700 1900 2100 VRRM (V) 1200 1400 1600 1800 2000 12 14 16 18 20 VR dc (V) 820 930 1040 1150 1250 2.0 De-rating Factor A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C. 3.0 ABCD Constants These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of the expression for the forward characteristic given below: VF = A + B ⋅ ln(I F ) + C ⋅ I F + D ⋅ I F where IF = instantaneous forward current. 4.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig.(a) below. (ii) Qrr is based on a 150µs integration time. 150 µs I.e. Qrr = ∫i rr .dt 0 (iii) K Factor = Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 t1 t2 Page 3 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 5.0 Reverse Recovery Loss The following procedure is recommended for use where it is necessary to include reverse recovery loss. From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated from: TSINK = T j ( MAX ) − E ⋅ [k + f ⋅ RthJK ] Where k = 0.2314 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = Rated frequency in Hz at the original sink temperature. Rth(J-Hs) = d.c. thermal resistance (°C/W) The total dissipation is now given by: W( tot ) = W( original ) + E ⋅ f NOTE 1 - Reverse Recovery Loss by Measurement This device has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) AC coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal. (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Where: Vr CS ⋅ di dt Vr = Commutating source voltage CS = Snubber capacitance R = Snubber resistance 6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 4 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 7.0 Computer Modelling Parameters 7.1 Device Dissipation Calculations I AV − VT 0 + VT 0 + 4 ⋅ ff 2 ⋅ rT ⋅ WAV = 2 ⋅ ff 2 ⋅ rT Where VT0 = 1.24V, rT = 0.33mΩ ff = form factor (normally unity for fast diode applications) WAV = ∆T Rth ∆T = T j ( MAX ) − Tk 7.2 Calculation of VF using ABCD Coefficients The forward characteristic IF Vs VF, on page 6 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, and D forming the coefficients of the representative equation for VF in terms of IF given below: VF = A + B ⋅ ln(I F ) + C ⋅ I F + D ⋅ I F The constants, derived by curve fitting software, are given in this report for both hot and cold characteristics. The resulting values for VF agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients 125°C Coefficients A 0.984151 0.704986 B 0.053377 0.077106 -5 C 8.09976×10 D 7.904892×10 -3 -4 1.018276×10 -3 7.854346×10 8.0 Frequency Ratings The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings shown on page 1. 9.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 10.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 5 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 Curves Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage 1000 10000 M1022LC120-200 Issue 1 125°C Maximum forward recovery voltage - VFRM (V) Instantaneous forward current - IFM (A) M1022LC120-200 Issue 1 25°C 1000 100 125°C 100 25°C 10 1 0 0.5 1 1.5 2 2.5 3 10 Maximum instantaneous forward voltage - VFM (V) Figure 3 - Recovered charge, Qrr 100 1000 10000 Rate of rise of forward current - di/dt (A/µs) Figure 4 - Recovered charge, Qra (50% chord) 10000 1000 M1022LC120-200 Issue 1 M1022LC120-200 Issue 1 Tj = 125°C Tj = 125°C Recovered charge - Q ra (µC) Total recovered charge - Qrr (µC) 2000A 1500A 1000A 500A 2000A 1500A 1000A 1000 500A 100 100 10 1 10 100 1000 1 Commutation rate - di/dt (A/µs) Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 10 100 1000 Commutation rate - di/dt (A/µs) Page 6 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 Figure 5 - Maximum reverse current, Irm Figure 6 - Maximum recovery time, trr (50% chord) 1000 10 M1022LC120-200 Issue 1 M1022LC120-200 Issue 1 Tj = 125°C Tj = 125°C Recovery time - trr (µs) Reverse recovery current - I rm (A) 2000A 1500A 1000A 500A 100 10 2000A 1500A 1000A 500A 1 1 10 100 1 1000 10 Figure 7 – Reverse recovery energy per pulse 1000 Figure 8 - Sine wave energy per pulse 1000 1.00E+02 M1022LC120-200 Issue 1 M1022LC120-200 Issue 1 Tj = 125°C Vr=67%VRRM 0.1µF, 10Ω Snubber Tj = 125°C 2000A 1000A 500A 250A 1.00E+01 Energy per pulse (J) Energy per pulse - Er (mJ) 100 Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) 100 3000A 2000A 1500A 1000A 500A 1.00E+00 1.00E-01 10 1 10 100 1.00E-02 1.00E-05 1000 Commmutation rate - di/dt (A/µs) Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 7 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 Figure 9 - Sine wave frequency vs. pulse width 1.00E+05 Figure 10 - Sine wave frequency vs. pulse width 1.00E+05 M1022LC120-200 Issue 1 M1022LC120-200 Issue 1 TK = 55°C TK = 85°C 500A 500A 100% Duty Cycle 100% Duty Cycle 1.00E+04 1.00E+04 1000A 1500A 1.00E+03 Frequency (Hz) Frequency (Hz) 1000A 2000A 1500A 1.00E+03 3000A 3000A 1.00E+02 2000A 1.00E+02 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 11 - Square wave energy per pulse Figure 12 - Square wave energy per pulse 1.00E+03 1.00E+02 M1022LC120-200 Issue 1 di/dt =100A/µs M1022LC120-200 Issue 1 Tj = 125°C Tj = 125°C di/dt =500A/µs 3000A 2000A 1500A 1000A 500A 1.00E+02 Energy per pulse (J) Energy per pulse (J) 1.00E+01 1.00E+01 3000A 1.00E+00 1.00E+00 2000A 1500A 1000A 500A 1.00E-01 1.00E-05 1.00E-04 1.00E-03 1.00E-01 1.00E-05 1.00E-02 Pulse width (s) Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 8 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 Figure 13 - Square wave frequency vs. pulse width Figure 14 - Square wave frequency vs. pulse width 1.00E+05 1.00E+05 M1022LC120-200 Issue 1 M1022LC120-200 Issue 1 di/dt =500A/µs di/dt =100A/µs TK=55°C 500A TK = 55°C 100% Duty Cycle 100% Duty Cycle 500A 1.00E+04 1.00E+04 1000A 1500A Frequency (Hz) Frequency (Hz) 1000A 2000A 1.00E+03 3000A 1.00E+03 1500A 2000A 1.00E+02 3000A 1.00E+02 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 Pulse width (s) Figure 15 - Square wave frequency vs. pulse width 1.00E-04 1.00E-03 Pulse width (s) 1.00E-02 Figure 16 - Square wave frequency vs. pulse width 1.00E+05 1.00E+05 M1022LC120-200 Issue 1 M1022LC120-200 Issue 1 di/dt =100A/µs di/dt =500A/µs TK = 85°C TK = 85°C 500A 1.00E+04 1.00E+04 100% Duty Cycle 500A 100% Duty Cycle Frequency (Hz) Frequency (Hz) 1000A 1500A 1.00E+03 2000A 1.00E+03 1000A 1500A 1.00E+02 2000A 3000A 1.00E+02 3000A 1.00E+01 1.00E-05 1.00E-04 1.00E-03 Pulse width (s) Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 1.00E+01 1.00E-05 1.00E-02 Page 9 of 11 1.00E-04 1.00E-03 Pulse width (s) 1.00E-02 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 2 Figure 17 – Maximum surge and I t ratings 1.00E+07 M1022LC120-200 Issue 1 I2t: VRRM≤10V I2t: VR=60% VRRM Tj (initial) = 125°C 1.00E+06 10000 IFSM: VRRM≤10V Maximum I2t (A2s) Total peak half sine surge current - IFSM (A) 100000 IFSM: VR=60% VRRM 1000 1 3 5 10 1 5 Duration of surge (ms) 10 1.00E+05 50 100 Duration of surge (cycles @ 50Hz) Figure 18 – Transient thermal impedance 0.1 M1022LC120-200 Issue 1 SSC 0.066K/W Thermal impedance (K/W) DSC 0.033K/W 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 Time (s) Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 10 of 11 July, 2004 WESTCODE An IXYS Company Soft Recovery Diode Types M1022LC120 to M1022LC200 Outline Drawing & Ordering Information ORDERING INFORMATION M1022 Fixed Type Code (Please quote 10 digit code as below) LC 0 Fixed outline code Voltage code VDRM/100 12-20 Fixed code Order code: M1022LC120 – 1200V VRRM, 27.0mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] WESTCODE An IXYS Company IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: [email protected] www.westcode.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: [email protected] © Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves 7he right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types M1022LC120 to M1022LC200 Issue 1 Page 11 of 11 July, 2004

- Similar pages
- E2400TC45C
- High Power Sonic FRD
- Distributed Gate Thyristor Type R2475ZC20# to
- Distributed Gate Thyristor Type R3370ZC10# to
- Distributed Gate Asymmetric Thyristor
- Distributed Gate Thyristor Type R2619ZC18# to
- Distributed Gate Thyristor Type R1127NC32# to
- WESTCODE - IXYS Corporation
- Fast Turn-off Thyristor Type P0128SH10# to P0128SH12#
- Distributed Gate Thyristor Type R2620ZC22# to
- Distributed Gate Thyristor Types R0964LC10x to R0964LC12x
- Distributed Gate Thyristor Types R1275NC14x to
- Distributed Gate Thyristor Type R0830LC12x to
- Distributed Gate Thyristor Types R3047TC24x to
- Rectifier Diode
- Detail - Westcode
- Rectifier Diode
- Rectifier Diode
- Distributed Gate Thyristor Type R1448NC20x
- Distributed Gate Thyristor Type R1158NC26x
- Rectifier Diode
- Distributed Gate Thyristor Type R1271NC12x