Date:- 10 Nov, 2014 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM LIMITS UNITS RATINGS IC DC collector current, IGBT 1600 A ICRM Repetitive peak collector current, tp=1ms, IGBT 3200 A IF(DC) Continuous DC forward current, Diode 1600 A IFRM Repetitive peak forward current, tp=1ms, Diode 3200 A IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) 30 A IFSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) 33 A PMAX Maximum power dissipation, IGBT (Note 2) 12.8 kW (di/dt)cr Critical diode di/dt (note 3) 3000 A/µs Tj Operating temperature range. -40 to +125 °C Tstg Storage temperature range. -40 to +125 °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial. Data Sheet T1600GB45G Issue 1 Page 1 of 8 November, 2014 Insulated Gate Bi-polar Transistor Type T1600GB45G Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS - 2.75 3.2 IC = 1600A, VGE = 15V, Tj = 25°C IC = 1600A, VGE = 15V UNITS V VCE(sat) Collector – emitter saturation voltage - 3.50 3.9 VT0 Threshold voltage - - 1.79 rT Slope resistance - - 1.32 VGE(TH) Gate threshold voltage - 5.1 - VCE = VGE, IC = 170mA V ICES Collector – emitter cut-off current 45 70 VCE = VCES, VGE = 0V mA IGES Gate leakage current - - ±20 VGE = ±20V µA Cies Input capacitance - 270 - VCE = 25V, VGE = 0V, f = 1MHz nF td(on) Turn-on delay time - 2.2 - tr(V) Rise time - 4.4 - IC =1600A, VCE =2800V, di/dt=2700A/µs µs Qg(on) Turn-on gate charge - 9 - VGE = ±15V, Ls=200nH µC Eon Turn-on energy - 12 - Rg(ON)= 4.3Ω, Rg(OFF)=12Ω, CGE=133nF J td(off) Turn-off delay time - 4.8 - Integral diode used as freewheel diode µs tf(I) Fall time - 2.6 - (Note 3 & 4) µs Qg(off) Turn-off gate charge - 10 - µC Eoff Turn-off energy - 8.7 - J ISC Short circuit current - 5000 - MIN TYP MAX - 3.3 3.6 IF = 1600A, Tj =25°C V - 3.45 3.8 IF = 1600A V - 2.14 V V Current range: 530A – 1600A mΩ µs VGE=+15V, VCC=2800V, VCEmax≤VCES, tp≤10µs A Diode Characteristics PARAMETER TEST CONDITIONS UNITS VF Forward voltage VTo Threshold voltage - rT Slope resistance - - 1.04 Irm Peak reverse recovery current - 1380 - Qrr Recovered charge - 1970 - IF = 1600A, Vr = 2800V, VGE = -15V, µC trr Reverse recovery time, 50% chord - 1.7 - di/dt=2700A/µs µs Er Reverse recovery energy - 2.1 - MIN TYP MAX - - - - - - - V Current range 530A - 1600A mΩ A J Thermal Characteristics PARAMETER RthJK RthJK Thermal resistance junction to sink, IGBT Thermal resistance junction to sink, Diode F Mounting force Wt Weight TEST CONDITIONS UNITS 7.8 Double side cooled K/kW 12.8 Collector side cooled K/kW 20.3 Emitter side cooled K/kW - 12.3 Double side cooled K/kW - - 19.5 Cathode side cooled K/kW - - 35.7 Anode side cooled K/kW 50 - 70 - 2 - Note 2 kN kg Notes:1) Unless otherwise indicated Tj=125°C. 2) Consult application note 2008AN01 for detailed mounting requirements 3) CGE is additional gate – emitter capacitance added to output of gate drive 4) Figures 6 to 9 are obtained using integral diode as freewheeling diode Data Sheet T1600GB45G Issue 1 Page 2 of 8 November, 2014 Insulated Gate Bi-polar Transistor Type T1600GB45G Curves Figure 1 – Typical collector-emitter saturation voltage characteristics Figure 2 – Typical output characteristic 2500 10000 T1600GB45G Issue 1 T1600GB45G Issue 1 V GE =+15V T j =25°C 25°C 125°C 2000 Collector current - Ic(A) Collector current - IC (A) 1000 1500 V GE = 20V V GE = 17V V GE = 15V V GE = 13V V GE = 11V 1000 100 500 10 0 0 1 2 3 4 5 6 0 Collector to emitter saturation voltage - V CE(sat) (V) 1 2 3 4 Collector to em itter saturation voltage - V CE(sat) (V) 5 Figure 4 – Typical turn-on delay time vs gate resistance Figure 3 – Typical output characteristic 2500 15 V C E =2800V V G E =±15V C G E =133nF T j=125°C T1600GB45G Issue 1 T j =125°C T1600G B 45G Issue 1 1600A 2000 800A Turn-on delay time - td(on)(µs) Collector current - Ic(A) 10 1500 V GE = 20V V GE = 17V V GE = 15V V GE = 13V V GE = 11V 1000 5 500 0 0 0 1 2 3 4 Collector to emitter saturation voltage - V CE(sat) (V) Data Sheet T1600GB45G Issue 1 0 5 5 10 15 20 25 G ate resistance - R G (on) (Ω ) Page 3 of 8 November, 2014 Insulated Gate Bi-polar Transistor Type T1600GB45G Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current 14 15 V CE =2800V V GE=±15V C GE=133nF T j=125°C T1600GB45G Issue 1 T1600GB45G Issue 1 R G(on)=4.3Ω C GE =133nF V GE=±15V T j=125°C V CE=2800V 12 1600A Turn-on energy per pulse - E(on)(J) Turn-off delay time - td(off)(µs) 800A 10 8 10 V CE=2000V 5 V CE=1000V 6 4 0 0 10 20 30 Gate resistance - R G(off) (Ω) 40 50 0 500 1000 1500 2000 Collector current - IC (A) Figure 7 – Typical turn-on energy vs. di/dt Figure 8 – Typical turn-off energy vs. collector current 40 10 V CE=2800V V GE=±15V Tj=125°C T1600GB45G Issue 1 T1600GB45G Issue 1 R G(off)=12Ω C GE =133nF V GE =±15V T j=125°C V CE =2800V 8 Turn-on energy per pulse - E(off)(J) Turn-on energy per pulse - E(on)(J) 30 20 IC=1600A V CE =2000V 6 4 V CE =1000V 10 2 IC =800A 0 0 0 1000 2000 3000 4000 Commutation rate - di/dt (A/µs) Data Sheet T1600GB45G Issue 1 Page 4 of 8 0 500 1000 1500 Collector current - IC (A) 2000 November, 2014 Insulated Gate Bi-polar Transistor Type T1600GB45G Figure 9 – Turn-off energy vs voltage Figure 10 – Safe operating area (IGBT) 4000 12 V GE=±15V Maximum LS=200nH T j=125°C T1600GB45G Issue 1 RG(off)=12Ω CGE=133nF VGE=±15V Tj=125°C T1600GB45G Issue 1 10 IC=1600A 3000 Collector current - I C (A) Turn-off energy - Eoff (J) 8 IC=1200A 6 IC=800A 2000 4 1000 IC=400A 2 0 500 0 1000 1500 2000 2500 3000 0 1000 Collector-emitter voltage - VCE (V) Figure 11 – Typical diode forward characteristics 10000 2000 3000 4000 5000 Gollector-emitter voltage - V CE (V) Figure 12 – Typical recovered charge 2500 T1600GB45G Issue 1 T1600GB45G Issue 1 T j=125°C T j=125°C Typical recovered charge - Qrr (µC) Instantaneous forward current - IF (A) T j=25°C 1000 100 IC =1600A 2000 1500 IC =800A 1000 10 500 0 1 2 3 4 5 Instantaneous forw ard voltage - V F (V) Data Sheet T1600GB45G Issue 1 6 0 500 1000 1500 2000 2500 3000 3500 Commutation rate - di/dt (A/µs) Page 5 of 8 November, 2014 Insulated Gate Bi-polar Transistor Type T1600GB45G Figure 13 – Typical reverse recovery current 1500 Figure 14 – Typical reverse recovery time 5 T1600GB45G Issue 1 T1600GB45G Issue 1 T j=125°C IC =1600A 4 I C =800A Typical reverse recovery time - trr (µs) Typical reverse recovery current - Irm (A) T j=125°C 1000 500 3 2 I C =1600A 1 0 I C =800A 0 0 500 1000 1500 2000 2500 3000 3500 0 500 Figure 15 – Typical reverse recovery energy 3 1000 1500 2000 2500 3000 3500 Com m utation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Figure 16 – Safe operating area (Diode) 2500 T1600GB45G Issue 1 T j=125°C T1600GB45G Issue 1 Maximum L S=200nH T j=125°C IC =1600A Reverse recovery current - Ir (A) Typical reverse recovery energy - Er (µs) 2000 2 IC =800A 1 1500 1000 500 0 0 0 500 1000 1500 2000 2500 3000 3500 Data Sheet T1600GB45G Issue 1 0 1000 2000 3000 4000 Reverse recovery voltage - V r (V) Commutation rate - di/dt (A/µs) Page 6 of 8 November, 2014 Insulated Gate Bi-polar Transistor Type T1600GB45G Figure 17 – Transient thermal impedance (IGBT) 0.1 Figure 18 – Transient thermal impedance (Diode) 0.1 T1600G B45G Issue 1 T1600G B45G Issue 1 Em itter Collector Double Side 0.01 Transient thermal impedance junction to sink (K/W) Transient thermal impedance junction to sink (K/W) 0.01 0.001 0.0001 0.00001 0.000001 0.00001 0.0001 Anode Cathode Double Side 0.001 0.0001 0.00001 0.001 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 Data Sheet T1600GB45G Issue 1 0.001 0.01 0.1 1 10 100 Tim e (s) Tim e (s) Page 7 of 8 November, 2014 Insulated Gate Bi-polar Transistor Type T1600GB45G Outline Drawing & Ordering Information 113A370 ORDERING INFORMATION T1600 GB Fixed type Code Fixed Outline Code (Please quote 10 digit code as below) 45 IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] G Fixed format code Voltage Grade VCES/100 45 Typical order code: T1600GB45G (VCES = 4500V) IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.net IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet T1600GB45G Issue 1 Page 8 of 8 November, 2014