Distributed Gate Thyristor Types R0964LC10x to R0964LC12x

Date:- 01 August 2012
Data Sheet Issue:- 2
Distributed Gate Thyristor
Types R0964LC10x to R0964LC12x
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
1000-1200
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
1000-1200
V
VRRM
Repetitive peak reverse voltage, (note 1)
1000-1200
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
1000-1300
V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
IT(AV)
Mean on-state current, Tsink=55°C, (note 2)
964
A
IT(AV)
Mean on-state current. Tsink=85°C, (note 2)
622
A
IT(AV)
Mean on-state current. Tsink=85°C, (note 3)
348
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
1971
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
869
A
ITSM
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
9.4
kA
ITSM2
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
10.8
2
kA
It
I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
442×10
A2s
I2 t
2
I t capacity for fusing tp=10ms, VRM≤10V, (note 5)
580×103
A2s
Maximum rate of rise of on-state current (repetitive), (Note 6)
1000
A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/µs
(di/dt)cr
2
3
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
VGD
Non-trigger gate voltage, (Note 7)
0.25
V
THS
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM.
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
Page 1 of 12
August, 2012
R0964LC10x to R0964LC12x
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
-
1.96
VT0
Threshold voltage
-
-
1.53
V
rT
Slope resistance
-
-
0.309
mΩ
200
-
-
(dv/dt)cr Critical rate of rise of off-state voltage
ITM=1400A
V
VD=80% VDRM, linear ramp
V/µs
IDRM
Peak off-state current
-
-
70
Rated VDRM
mA
IRRM
Peak reverse current
-
-
70
Rated VRRM
mA
VGT
Gate trigger voltage
-
-
3.0
IGT
Gate trigger current
-
-
300
IH
Holding current
-
-
1000
tgt
Gate-controlled turn-on delay time
-
0.9
2.0
tgd
Turn-on time
-
0.4
1.0
Qrr
Recovered charge
-
170
-
Qra
Recovered charge, 50% Chord
-
75
90
Irr
Reverse recovery current
-
85
-
trr
Reverse recovery time
-
2.15
-
-
-
25
15
-
25
-
-
0.032
Double side cooled
K/W
-
-
0.064
Single side cooled
K/W
10
-
20
kN
-
340
-
g
tq
Turn-off time (note 2)
RthJK
Thermal resistance, junction to heatsink
F
Mounting force
Wt
Weight
Tj=25°C
V
VD=10V, IT=3A
mA
Tj=25°C
mA
VD=67% VDRM, IT=2000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
µC
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
Page 2 of 12
µC
A
µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Notes:1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
µs
August, 2012
µs
R0964LC10x to R0964LC12x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
10
12
VDRM VDSM VRRM
V
1000
1200
VRSM
V
1100
1300
VD VR
DC V
750
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f
max
=
1
tpulse + tq + tv
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
Page 3 of 12
August, 2012
R0964LC10x to R0964LC12x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) )
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
i.e.
Qrr =
∫i
rr
.dt
0
(iii)
K Factor =
t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
TSINK ( new ) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
Page 4 of 12
August, 2012
R0964LC10x to R0964LC12x
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f )
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 ⋅
Vr
CS ⋅ di dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
Page 5 of 12
August, 2012
R0964LC10x to R0964LC12x
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
125°C Coefficients
A
1.24364135
B
0.07826174
C
3.9695×10-4
D
-0.01085943
14.2 D.C. Thermal Impedance Calculation
−t
⎛
τ
rt = ∑ rp ⋅ ⎜1 − e p
⎜
p =1
⎝
p=n
⎞
⎟
⎟
⎠
Where p = 1 to n, n is the number of terms in the series.
t
rt
rp
τp
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of pth term.
Time Constant of rth term.
D.C. Double Side Cooled
Term
1
2
3
rp
0.01771901
4.240625×10
τp
0.7085781
0.1435833
-3
4
6.963806×10
-3
3.043661×10-3
2.130842×10-3
0.03615196
D.C. Single Side Cooled
Term
1
2
3
rp
0.03947164
0.01022837
8.789912×10
τp
4.090062
1.078983
0.08530917
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
Page 6 of 12
4
-3
4.235162×10
0.01128791
5
-3
1.907609×10-3
1.240861×10-3
August, 2012
R0964LC10x to R0964LC12x
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.064K/W
DSC 0.032K/W
Tj = 125°C
Transient Thermal Impedance - Z(th)t (K/W)
Instantaneous on-state current - IT (A)
0.01
1000
0.001
0.0001
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue2 1
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue21
100
0
0.5
1
1.5
2
2.5
3
0.00001
0.0001
3.5
Instantaneous on-state voltage - VT (V)
0.001
0.01
0.1
1
10
100
Time (s)
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
20
6
R0964LC10x-12x
R0964LS10x-12x
Issue12
Issue
R0964LC10x-12x
R0964LS10x-12x
Issue12
Issue
Tj=25°C
Tj=25°C
18
5
14
Max VG dc
4
Gate Trigger Voltage - VGT (V)
Gate Trigger Voltage - VGT (V)
16
IGT, VGT
3
Max VG dc
12
10
8
PG Max 30W dc
2
-40°C
-10°C
25°C
125°C
6
4
1
PG 2W dc
2
IGD, VGD
Min VG dc
Min VG dc
0
0
0
0.2
0.4
0.6
0.8
0
1
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Page 7 of 12
August, 2012
R0964LC10x to R0964LC12x
Figure 6 - Recovered charge, Qra (50% chord)
Figure 5 - Total recovered charge, Qrr
1000
1000
2000A
1500A
1000A
2000A
Recovered charge, 50% chord - Q ra (µC)
Total recovered charge - Qrr (µC)
500A
100
1500A
1000A
500A
100
Tj = 125°C
Tj = 125°C
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue2 1
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue21
10
10
10
100
10
1000
Figure 7 - Peak reverse recovery current, Irm
1000
Figure 8 - Maximum recovery time, trr (50% chord)
10
1000
2000A
1500A
1000A
500A
Reverse recovery time, 50% chord - trr (µs)
Reverse recovery current - Irm (A)
100
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
100
2000A
1500A
1000A
500A
Tj = 125°C
Tj = 125°C
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue21
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue21
1
10
10
100
10
1000
Commutation rate - di/dt (A/µs)
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
100
1000
Commutation rate - di/dt (A/µs)
Page 8 of 12
August, 2012
R0964LC10x to R0964LC12x
Figure 9 - Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
1
1.00E+02
R0964LC10x-12x
R0964LS10x-12x
Issue 12
Tj=125°C
Energy per pulse (J)
Energy per pulse - Er (J)
1.00E+01
2000A
1500A
1000A
500A
0.1
4kA
1.00E+00
2kA
1.5kA
1kA
1.00E-01
Snubber
0.1µF, 10Ω
500A
Tj = 125°C
Vrm = 67% VRRM
R0964LS10x-12x
R0964LC10x-12x
Issue
Issue21
1.00E-02
1.00E-05
0.01
10
100
Commutation rate - di/dt (A/µs)
1000
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+05
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue21
THs=55°C
500A
500A
100% Duty Cycle
100% Duty Cycle
1.00E+04
1kA
1kA
1.00E+04
1.5kA
1.5kA
2kA
2kA
Frequency (Hz)
Frequency (Hz)
1.00E+03
1.00E+03
4kA
4kA
1.00E+02
1.00E+02
1.00E+01
THs=85°C
R0964LS10x-12x
R0964LC10x-12x
Issue
Issue 12
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+00
1.00E-05
1.00E-02
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse Width (s)
Page 9 of 12
August, 2012
R0964LC10x to R0964LC12x
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
500A
1kA
500A
100% Duty Cycle
1.00E+04
100% Duty Cycle
1.00E+04
1.5kA
1kA
1.5kA
2kA
2kA
1.00E+03
1.00E+03
4kA
Frequency (Hz)
Frequency (Hz)
4kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
THs=55°C
THs=55°C
di/dt=100A/µs
di/dt=500A/µs
R0964LS10x-12x
R0964LC10x-12x
Issue12
Issue
R0964LS10x-12x
R0964LC10x-12x
Issue 12
Issue
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E+00
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
100% Duty Cycle
500A
1.00E+04
1.00E+04
100% Duty Cycle
500A
1kA
1kA
1.5kA
1.00E+03
2kA
Frequency (Hz)
Frequency (Hz)
1.5kA
1.00E+03
4kA
1.00E+02
2kA
4kA
1.00E+02
1.00E+01
THs=85°C
THs=85°C
di/dt=500A/µs
di/dt=100A/µs
R0964LC10x-12x
R0964LS10x-12x
Issue 12
1.00E+01
1.00E-05
R0964LS10x-12x
R0964LC10x-12x
Issue 2
1
1.00E-04
1.00E-03
1.00E-02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
1.00E+00
1.00E-05
Page 10 of 12
August, 2012
R0964LC10x to R0964LC12x
Figure 17 - Square wave energy per pulse
1.00E+03
Figure 18 - Square wave energy per pulse
1.00E+03
R0964LC10x-12x
R0964LS10x-12x
Issue 12
Issue
R0964LC10x-12x
R0964LS10x-12x
Issue 12
Issue
di/dt=500A/µs
Tj=125°C
di/dt=100A/µs
Tj=125°C
1.00E+02
1.00E+02
1.00E+01
Energy per pulse (J)
Energy per pulse (J)
4kA
2kA
4kA
1.00E+00
1.00E+01
1.00E+00
2kA
1.5kA
1kA
500A
1.5kA
1kA
1.00E-01
1.00E-01
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
1.00E+07
R0964LC10x-12x
R0964LS10x-12x
Issue
Issue 12
I2t: VRRM≤10V
Tj (initial) = 125°C
I2t: 60% VRRM
1.00E+06
10000
Maximum I2t (A2s)
Total peak half sine surge current - ITSM (A)
100000
ITSM: VRRM≤10V
ITSM: 60% VRRM
1.00E+05
1000
1
3
5
10
Duration of surge (ms)
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
1
5
10
50
100
Duration of surge (cycles @ 50Hz)
Page 11 of 12
August, 2012
R0964LC10x to R0964LC12x
Outline Drawing & Ordering Information
101A216
ORDERING INFORMATION
(Please quote 10 digit code as below)
R0964
LC
♦♦
♦
Fixed
Type Code
Fixed
Outline Code
Off-state Voltage Code
VDRM/100
10-12
tq Code
C=15µs, D=20µs, E=25µs
Typical order code: R0964LC12D – 1200V VDRM, 20µs tq, 27mm clamp height capsule.
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In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
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Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Types R0964LC10x to R0964LC12x Issue 2
Page 12 of 12
August, 2012