Date:- 01 August 2012 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R0830LC12x to R0830LC14x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1200-1400 V VDSM Non-repetitive peak off-state voltage, (note 1) 1200-1400 V VRRM Repetitive peak reverse voltage, (note 1) 1200-1400 V VRSM Non-repetitive peak reverse voltage, (note 1) 1300-1500 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AV)M Maximum average on-state current, Tsink=55°C, (note 2) 830 A IT(AV)M Maximum average on-state current. Tsink=85°C, (note 2) 528 A IT(AV)M Maximum average on-state current. Tsink=85°C, (note 3) 289 A IT(RMS) Nominal RMS on-state current, Tsink=25°C, (note 2) 1713 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 1318 A ITSM Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5) 8500 A ITSM2 Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5) 9350 A 3 It I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5) 361×10 A2s I2 t I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5) 437×103 A2s 2 (di/dt)cr 2 Critical rate of rise of on-state current (note 6) Single Shot 1500 Repetitive (50Hz, 60s) 1000 Continuous (50Hz) 500 A/µs Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 2 W PGM Peak forward gate power 30 W Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C VRGM Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 Page 1 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.4 VT0 Threshold voltage - - 1.9 V rT Slope resistance - - 0.357 mΩ 200 - - (dv/dt)cr Critical rate of rise of off-state voltage ITM=1400A V VD=80% VDRM, Linear ramp, Gate o/c V/µs IDRM Peak off-state current - - 70 Rated VDRM mA IRRM Peak reverse current - - 70 Rated VRRM mA VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 300 VGD Gate non-trigger voltage - - 0.25 Rated VDRM IH Holding current - - 1000 Tj=25°C mA tgd Gate controlled turn-on delay time 0.4 1.0 tgt Turn-on time - 0.8 2.0 VD=67% VDRM, ITM=1500A, di/dt=60A/µs, IFG=2A, tr=0.5µs, Tj=25°C µs Qrr Recovered charge - 285 - Qra Recovered charge, 50% Chord - 110 130 Irm Reverse recovery current - 95 - trr Reverse recovery time - 2.7 - - 25 - 15 - 35 - - 0.032 Double side cooled K/W - - 0.064 Single side cooled K/W 10 - 20 - 340 - tq Turn-off time (note 2) RthJK Thermal resistance, junction to heatsink (note 3) F Mounting force Wt Weight Tj=25°C V VD=10V, IT=3A mA V µC ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V Page 2 of 12 A µs ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs IITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs µs kN Outline option LC g Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for details of tq codes. 3) For other clamp forces, please consult factory Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 µC August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 12 14 VDRM VDSM V 1200 1400 VRRM V 1200 1400 VRSM V 1300 1500 VD DC V 1300 1500 VR DC V 810 930 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 7.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 8.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 Page 3 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x 9.0 Frequency Ratings The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings shown on page 1. 10.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 11.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 12.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv 13.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let RthJK be the steady-state d.c. thermal resistance (junction to sink) and TK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TK (max .) = 125 − (W AV ⋅ RthJK ) 14.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 Fig. 1 150 µs (ii) Qrr is based on a 150µs integration time i.e. Qrr = ∫i rr .dt 0 (iii) Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 K Factor = Page 4 of 12 t1 t2 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x 15.0 Reverse Recovery Loss 15.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from the following: TK ( new ) = TK ( original ) − E ⋅ (k + f ⋅ RthJK ) Where k=0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. RthJK = d.c. thermal resistance (°C/W). The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 15.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TK (new ) = TK (original ) − (E ⋅ Rth ⋅ f ) Where TK (new) is the required maximum heat sink temperature and TK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. NOTE 1- Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Where: Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 Vr CS R = Commutating source voltage = Snubber capacitance = Snubber resistance Page 5 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x 16.0 Computer Modelling Parameters 16.1 Calculating VT using ABCD Coefficients The on-state characteristic IT vs VT, on page 7 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T The constants, derived by curve fitting software, are given in this report for hot and cold characteristics where possible. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 125°C Coefficients A 2.41395901 B -0.2538009 C 2.2821×10-4 D 4.022639 ×10-3 16.2 D.C. Thermal Impedance Calculation −t ⎛ τ rt = ∑ rp ⋅ ⎜1 − e p ⎜ p =1 ⎝ p=n ⎞ ⎟ ⎟ ⎠ Where p = 1 to n, n is the number of terms in the series. t rt rp τp = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Double Side Cooled Term 1 2 3 rp 0.01771901 4.240625×10 τp 0.7085781 0.1435833 -3 4 6.963806×10 -3 3.043661×10-3 2.130842×10-3 0.03615196 D.C. Single Side Cooled Term 1 2 3 rp 0.03947164 0.01022837 8.789912×10 τp 4.090062 1.078983 0.08530917 Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 Page 6 of 12 4 -3 4.235162×10 0.01128791 5 -3 1.907609×10-3 1.240861×10-3 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Curves Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance 10000 0.1 SSC 0.064K/W Tj = 125°C DSC 0.032K/W Transient Thermal Impedance - Z(th)t (K/W) Instantaneous on-state current - IT (A) 0.01 1000 0.001 0.0001 R0830LS10x-14x R0830LC12x-14x Issue 3 2 R0830LC12x-14x R0830LS10x-14x Issue 32 Issue 100 0 1 2 3 4 0.00001 0.0001 5 Instantaneous on-state voltage - VT (V) 0.001 0.01 0.1 1 10 100 Time (s) Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves 20 6 R0830LC12x-14x R0830LS10x-14x Issue2 3 Issue R0830LC12x-14x R0830LS10x-14x Issue Issue 23 18 Tj=25°C Tj=25°C 5 16 Gate Trigger Voltage - V GT (V) Gate Trigger Voltage - V GT (V) 14 Max VG dc 4 IGT, VGT 3 Max VG dc 12 10 8 2 PG Max 30W dc -40°C -10°C 25°C 125°C 6 4 1 PG 2W dc 2 IGD, VGD Min VG dc Min VG dc 0 0 0 0.2 0.4 0.6 0.8 0 1 Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 2 4 6 8 10 Gate Trigger Current - IGT (A) Gate Trigger Current - IGT (A) Page 7 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Figure 5 - Total recovered charge, Qrr Figure 6 - Recovered charge, Qra (50% chord) 1000 1000 2000A 2000A 1500A 1500A 1000A 1000A 500A Total recovered charge - Qrr (µC) Recovered charge, 50% chord - Qra (µC) 500A 100 Tj = 125°C Tj = 125°C R0830LC12x-14x R0830LS10x-14x Issue Issue32 R0830LC12x-14x R0830LS10x-14x Issue 3 2 Issue 100 10 10 100 1000 10 Commutation rate - di/dt (A/µs) Figure 7 - Peak reverse recovery current, Irm 1000 Figure 8 - Maximum recovery time, trr (50% chord) 10 1000 Reverse recovery time, 50% chord - trr (µs) 2000A 1500A 1000A 500A Reverse recovery current - Irm (A) 100 Commutation rate - di/dt (A/µs) 100 2000A 1500A 1000A 500A Tj = 125°C Tj = 125°C R0830LS10x-14x R0830LC12x-14x Issue3 2 Issue R0830LC12x-14x R0830LS10x-14x Issue 32 Issue 1 10 10 100 10 1000 Commutation rate - di/dt (A/µs) Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 100 1000 Commutation rate - di/dt (A/µs) Page 8 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Figure 9 – Reverse recovery energy per pulse Figure 10 - Sine wave energy per pulse 10000 1.00E+02 R0830LS10x-14x R0830LC12x-14x Issue 2 3 Issue Tj=125°C Energy per pulse (J) Energy per pulse - Er (mJ) 1.00E+01 2000A 1500A 1000A 500A 1000 4kA 1.00E+00 2kA 1.5kA 1kA 1.00E-01 500A Snubber 0.1µF, 10Ω Tj = 125°C Vrm = 67% VRRM R0830LS12x-14x Issue 2 R0830LC12x-14x Issue 3 1.00E-02 1.00E-05 100 10 100 1000 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Commutation rate - di/dt (A/µs) Figure 11 - Sine wave frequency ratings Figure 12 - Sine wave frequency ratings 1.00E+05 1.00E+05 R0830LC12x-14x R0830LS10x-14x Issue 3 2 Issue THs=55°C 500A 500A 100% Duty Cycle 100% Duty Cycle 1.00E+04 1.00E+04 1kA 1kA 1.5kA 1.5kA 2kA 2kA Frequency (Hz) Frequency (Hz) 1.00E+03 1.00E+03 4kA 4kA 1.00E+02 1.00E+02 1.00E+01 THs=85°C R0830LS10x-14x R0830LC12x-14x IssueIssue 2 3 1.00E+01 1.00E-05 1.00E-04 1.00E-03 1.00E+00 1.00E-05 1.00E-02 Pulse Width (s) Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 9 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Figure 13 - Square wave frequency ratings Figure 14 - Square wave frequency ratings 1.00E+05 1.00E+05 500A 100% Duty Cycle 1kA 1.00E+04 100% Duty Cycle 500A 1.5kA 1.00E+04 1kA 2kA 1.5kA 1.00E+03 Frequency (Hz) Frequency (Hz) 4kA 2kA 1.00E+03 4kA 1.00E+02 1.00E+02 1.00E+01 THs=55°C THs=85°C di/dt=100A/µs di/dt=100A/µs R0830LS10x-14x R0830LC12x-14x Issue Issue23 R0830LS10x-14x R0830LC12x-14x Issue 23 Issue 1.00E+00 1.00E-05 1.00E-04 1.00E-03 1.00E+01 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 15 - Square wave frequency ratings Figure 16 - Square wave frequency ratings 1.00E+05 1.00E+05 500A 500A 100% Duty Cycle 1.00E+04 100% Duty Cycle 1.00E+04 1kA 1kA 1.5kA 1.5kA 2kA 1.00E+03 2kA Frequency (Hz) Frequency (Hz) 1.00E+03 4kA 1.00E+02 1.00E+02 4kA 1.00E+01 1.00E+01 THs=55°C THs=85°C di/dt=500A/µs R0830LS10x-14x R0830LC12x-14x Issue Issue23 di/dt=500A/µs 1.00E+00 1.00E-05 1.00E-04 R0830LS10x-14x R0830LC12x-14x Issue Issue2 3 1.00E-03 1.00E+00 1.00E-05 1.00E-02 Pulse width (s) Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 1.00E-04 1.00E-03 1.00E-02 Pulse width (s) Page 10 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Figure 17 - Square wave energy per pulse 1.00E+03 Figure 18 - Square wave energy per pulse 1.00E+03 di/dt=100A/µs R0830LS10x-14x R0830LC12x-14x Issue 2 3 Issue di/dt=500A/µs Tj=125°C Tj=125°C R0830LS10x-14x R0830LC12x-14x Issue Issue 2 3 1.00E+02 1.00E+02 Energy per pulse (J) Energy per pulse (J) 4kA 2kA 1.00E+01 4kA 1.00E+00 1.00E+01 1.00E+00 2kA 1.5kA 1kA 500A 1.5kA 1kA 1.00E-01 1.00E-01 500A 1.00E-02 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-05 1.00E-02 1.00E-04 Pulse width (s) 1.00E-03 1.00E-02 Pulse width (s) Figure 19 - Maximum surge and I2t Ratings Gate may temporarily lose control of conduction angle 100000 1.00E+07 Tj (initial) = 125°C I t: VRRM≤10V 2 2 I t: 60% VRRM 2 2 Maximum I t (A s) Total peak half sine surge current - ITSM (A) R0830LS10x-14x R0830LC12x-14x Issue Issue2 3 10000 1.00E+06 ITSM: VRRM≤10V ITSM: 60% VRRM 1000 1.00E+05 1 3 5 10 Duration of surge (ms) Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 1 5 10 50 100 Duration of surge (cycles @ 50Hz) Page 11 of 12 August 2012 Distributed Gate Thyristor Types R0830LC12x to R0830LC14x Outline Drawing & Ordering Information 101A216 ORDERING INFORMATION R0830 Fixed Type Code (Please quote 10 digit code as below) LC ♦♦ ♦ Outline Code Fixed Voltage Code VDRM/100 12-14 tq Code C=15µs, D=20µs, E=25µs, F = 30µs Typical order code: R0830LC12E – 1200V VDRM, 1200V VRRM 25µs tq, 27mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types R0830LC12x to R0830LC14x Issue 3 Page 12 of 12 August 2012

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