Power MOSFET - IXYS Corporation

www.ixys.com
Contents
Page
Symbols and Definitions
Nomenclature
General Informations for Chips
Assembly Instructions
FRED, Rectifier Diode and Thyristor Chips in Planar Design
2
2
3
4
5
IGBT Chips
VCES
G-Series, Low VCE(sat) B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT³ technology
600 ...1200 V
600 V
600 V
1200 ... 1700 V
IC
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
6
6
6
7
MOSFET Chips
VDSS
HiPerFETTM Power MOSFET
PolarHT/HVTM Power MOSFET
PolarHT/HVTM HiPerFET Power MOSFET
N-Channel Depletion Mode MOSFET
P-Channel Power MOSFET
70 ...1200 V
55 ... 600 V
100 ... 600 V
500 ...1000 V
-100 ...-600 V
RDS(on)
0.005 ... 4.5 Ω
0.015 ... 0.135 Ω
0.0075 ... 0.74 Ω
30 ... 110 Ω
0.06 ... 1.2 Ω
Chip outlines
8-10
11
12-14
15
15
16-23
Bipolar Chips
VRRM / VDRM
Rectifier Diodes
FREDs
Low Leakage FREDs
SONIC-FRDTM Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
800 ... 2200 V
200 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 300 V
8 ... 200 V
800 ... 2200 V
1600 ... 1800 V
IF(AV)M / IT(AV)M
12 ... 788 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
24-25
26-28
29-30
31-32
33-34
35-38
39-40
41
Direct Copper Bonded (DCB) Ceramic Substrates
What is DCB?
42
DCB Specification
43
IXYS reserves the right to change limits, test conditions and dimensions
1
Symbols and Definitions
Cies
Ciss
-di/dt
IC
ID
IF
IF(AV)M
IFSM
IGT
IR
IRM
IT
IT(AV)M
ITSM
RDS(on)
Rthjc
rT
Tcase
Th
tfi
Tj, T(vj)
Tjm, T(vj)m
trr
VCE(sat)
VCES
VDRM
VDSS
VF
VR
VRRM
VT
VT0
Input capacitance of IGBT
Input capacitance of MOSFET
Rate of decrease of forward current
DC collector current
Drain current
Forward current of diode
Maximum average forward current at specified Th
Peak one cycle surge forward current
Gate trigger current
Reverse current
Maximum peak recovery current
Forward current of thyristor
Maximum average on-state current of a thyristor
at specified Th
Maximum surge current of a thyristor
Static drain-source on-state resistance
Thermal resistance junction to case
Slope resistance of a thyristor or diode
(for power loss calculations)
Case temperature
Heatsink temperature
Current fall time with inductive load
Junction temperature
Maximum junction temperature
Reverse recovery time of a diode
Collector-emitter saturation voltage
Maximum collector-emitter voltage
Maximum repetitive forward blocking
voltage of thyristor
Drain-source break-down voltage
Forward voltage of diode
Reverse voltage
Maximum peak reverse voltage of thyristor or
diode
On-state voltage of thyristor
Threshold voltage of thyristors or diodes (for
power loss calculation only)
Nomenclature
IGBT and MOSFET Discrete
IXSD 40N60A
(Example)
IX
IXYS
Die technology
NPT3 IGBT
HiPerFETTM Power MOSFET
Fast IGBT
IGBT with SCSOA capability
Standard Power MOSFET
Unassembled chip (die)
E
F
G
S
T
D
40
Current rating, 40 = 40 A
N
P
N-channel type
P-channel type
60
Voltage class, 60 = 600 V
xx
A
Q
Q2
P
L
-A
B
C
Diode and Thyristor Chips
C-DWEP 69-12
(Diode Example)
C
Package type
D
Chip function
D = Silicon rectifier diode
W
Unassembled chip
EP
Process designator
EP = Epitaxial rectifier diode
N = Rectifier diode, cathode on top
P = Rectifier diode, anode on top
FN = Fast Rectifier diode, cathode on top
FP = Fast Rectifier diode, anode on top
69
Registration No.:
ISO/TS 16949:
001947 TS2
Registration No.:
ISO 14001:
001947 UM
Registration No.:
OHSAS 18001:
001947 OH
Chip and DCB Ceramic Substrates catalogue
Edition 2008
© IXYS Semiconductor GmbH
Current rating value of one chip in A
Voltage class, 12 = 1200 V
W-CWP 55-12/18
(Thyristor Example)
W
Package type
Chip function
C = Silicon phase control thyristor
W
Unassembled chip
P
Process designator
P = Planar passivated chip
cathode on top
All Rights reserved
As far as patents or other rights of third parties are concerned, liability is only
assumed for chips and DCB parts per se, not for applications, processes and
circuits implemented with components or assemblies. Terms of delivery and the
right to change design or specifications are reserved.
2
-12
C
Published by IXYS Semiconductor GmbH
Marketing Communications
Edisonstraße 15, D-68623 Lampertheim
MOSFET
Prime RDS(on) for standard MOSFET
Low gate charge die
Low gate charge die, 2nd generation
PolarHT/HV Power MOSFET
Linear Mode MOSFET
IGBT
No letter, low VCE(sat)
Or A2, std speed type
Or B2, high speed type
Or C2, very high speed type
55
12/18
Current rating value of one chip in A
Voltage class, 12/18 = 1200 up to 1800 V
© 2008 IXYS All rights reserved
General Informations for Chips
When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip
attach process are very important to the reliability and performance of the final product. This brochure provides several guidelines
that describe recommended chip attachment procedures. These methods have been used successfully for many years at IXYS.
Available Packaging Options
IXYS offers various options.
Please order from one of the following possibilities:
Packaging Options
Delivery form
C-...*
Chips in tray (Waffle Pack);
Electrically tested
T-...*
Chips in wafer, unsawed;
Bipolar = 5" (125 mm∅) wafer;
or 6 " (150 mm∅)
Electrically tested, rejects are inked
W-...*
Chips in wafer on foil, sawed;
Bipolar = 5" (125 mm∅) wafer;
or 6 " (150 mm∅)
Electrically tested, rejects are inked
...* must be amended by the exact chip type designation.
Package, Storage and Handling
Chips should be transported in their original containers. All chip transfer to other containers or for assembly should be done only with
rubber-tipped vacuum pencils. Contact with human skin (or with a tool that has been touched by hand) leaves an oily residue that may
adversely impact subsequent chip attach or reliability.
At temperatures below 104°F (40°C), there is no limitation on storage time for chips in sealed original packages. Chips removed from
original packages should be assembled immediately. The wetting ability of the contact metallization with solder can be preserved by
storage in a clean and dry nitrogen atmosphere.
The IGBT and MOSFET Chips are electrostatic discharge (ESD) sensitive. Normal ESD precautions for handling must be observed.
Prior to chip attach, all testing and handling of the chips must be done at ESD safe work stations according to DIN IEC 47(CO) 701.
Ionized air blowers are recommended for added ESD protection.
Contamination of the chips degrades the assembly results.Finger prints, dust or oily deposits on the surface of the chips have to be
absolutely avoided.
Rough mechanical treatment can cause damage to the chip.
Electrical Tests
The electrical properties listed in the data sheet presume correctly assembled chips. Testing of non-assembled chips requires the
following precautions:
• High currents have to be supplied homogeneously to the whole metallized contact area.
• Kelvin probes must be used to test voltages at high currents
• Applying the full specified blocking or reverse voltage may cause arcing across the glass passivated junction termination,
because the electrical field on top of the passivation glass causes ionization of the surrounding air. This phenomenon can be
avoided by using inert fluids or by increasing the pressure of the gas surrounding the chip to values above 30 psig (2 bars).
General Rules for Assembly
The linear thermal expansion coefficient of silicon is very small compared to usual contact metals. If a large area metallized silicon
chip is directly soldered to a metal like copper, enormous shear stress is caused by temperature changes (e.g. when cooling down from
the solder temperature or by heating during working conditions) which can disrupt the solder mountdown.
If it is found that larger chips are cracking during mountdown or in the application, then the use of a low thermal expansion coefficient
buffer layer, e.g. tungsten, molybdenum or Trimetal®, for strain relief should be considered. An alternative solution is to soft-solder these
larger chips to DCB ceramic substrates because of their matching thermal expansion coefficients.
IXYS reserves the right to change limits, test conditions and dimensions
3
Assembly Instructions
MOS/IGBT Chips
Recommended Solder System
IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attach
temperature is 460°C for MOSFET and 360°C for HiPerFETTM and IGBT.
Wire Bonding
It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiple
wires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wire
bonds. For smaller gate pads, 0.15 mm diameter wire is recommended.
Thermal Response Testing
To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed.
Bipolar Chips
Assembling
IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either
the same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal for
soldering is pure silver.
Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reason
they can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules on
Page 3. All kinds of the usual soft solders with melting points below 660°F (350°C) can be used thanks to their pure silver top metal.
Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermal
fatigue.
Soldering temperature should not exceed 750°F (400°C). The maximum temperature should not be applied for more than five
minutes.
As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips.
This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids.
A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 %
Hydrogen in Nitrogen.
Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded and
temperature shocks above 930°F/min (500 K/min) are avoided.
We do not recommend the use of fluxes for soldering!
Ultrasonic Wire Bonding
Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 µm can be used
dependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable to
soldered chips.
Coating
Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating material
that is in contact with the chip surface must have the following properties:
- elasticity (to prevent mechanical stress)
- high purity, no contamination with alkali metals
- good adhesion to metals and glass passivation.
4
© 2008 IXYS All rights reserved
FRED, Rectifier Diode and Thyristor Chips in Planar Design
Fast Recovery Epitaxial Diodes (FRED)
Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
diodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses,
is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1).
The reverse current characteristic following the peak reverse current IRM is
another very important property. The slope of the decaying reverse current
dirr/dt results from design parameters; technology and diffusion of the FRED
chip Fig. 2. In a circuit this current slope, in conjunction with parasitic inductances (e.g. connecting leads) causes over-voltage spikes and high
frequency interference voltages.The higher the dirr/dt ("hard recovery" or
"snap-off" behavior) the higher is the resulting additional stress for both the
diode and the paralleled switch. A slow decay of the reverse current ("soft
recovery" behavior), is the most desirable characteristic, and this is designed
into all FRED. The wide range of available blocking voltages makes it
possible to apply these FRED as output rectifiers in switch-mode power
supplies (SMPS) as well as protective and free-wheeling diodes for power
switches in inverters and welding power supplies.
I
-diF/dt
-diF/dt
IF
trr
ta
10%
Qr
IRM
tb
diR/dt
0.9 IRM
0.25 IRM
t
tfr
V
VFR
VF
t
100% 110%
VR
Fig. 1: Current and voltage during turn-on and
turn-off switching of fast diodes
Glasspassivation
Rectifier Diode and Thyristor Chips
The figures 3 a-c show cross sectional views of the diode and thyristor
chips in the passivation area. All diode and thyristor chips (DWN, DWFN,
CWP) are fabricated using separation diffusion processes so that all
junctions terminate on the topside of the chip. Now the entire bottom
surfaces of all chips are available for soldering onto a DCB or other ceramic
substrate without a molybdenum strain buffer. The elimination of the strain
buffer and its solder joint reduces thermal resistance and increases
blocking voltage stability. The junction termination areas are passivated
with glass, whose thermal expansion coefficient matches that of silicon. All
silicon chips increasingly use planar technology with guard rings and
channel stoppers to reduce electric fields on the chip surface.
The contact areas of the chips have vapor deposited metal layers which
contribute substantially to their high power cycle capability. All chips are
processed on silicon wafers of 5" diameter and diced after a wafer sample
test which auto-matically marks chips not meeting the electrical specification.
The chip geometry is square or rectangular.
Guard ring
Anode
Anode
Epitaxie Schicht
Epitaxy
layern- n-
+
Substrat n+ n+
Substrate
Cathode
Kathode
Metalization
Fig. 2: Cross section of glassivated planar epitaxial
diode chip (type DWEP)
Fig. 3b)
Fig. 3a-c
Cross sections of Chips in the passivation area
a) Diode chip, type DWN, DWFN
b) Diode chip, type DWP, DWFP
c) Thyristor chip, type CWP
Feldring Guard ring
Glaspassivierung Glasspassivation
p
n
n+
Metallisierung
Glasspassivation
Fig. 3a)
Metalization
n+ -Emitter
Fig. 3c)
Glaspassivierung Glasspassivation
Emitter
Guardring
Channel stopper
p
Metalization
n
p
Metallisierung
IXYS reserves the right to change limits, test conditions and dimensions
Metalization
5
IXGD28N60B3-45
IXGD36N60B3-55
IXGD48N60B3-56
IXGD56N60B3-65
IXGD64N60B3-75
IXGD72N60B3-76
IXGD90N60B3-85
IXGD120N60B3-86
IXGD200N60B3-97
600V B3-Series
IXGD28N60A3-45
IXGD36N60A3-55
IXGD48N60A3-56
IXGD56N60A3-65
IXGD64N60A3-75
IXGD72N60A3-76
IXGD90N60A3-85
IXGD120N60A3-86
IXGD360N60A3-97
TJM = 150°C
Type
GenX3 IGBTs
600V A3-Series
600
600
600
600
600
600
600
600
600
600
V
VCES
1.8
1.8
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.5
1.4
1.3
1.3
1.3
1.3
1.3
1.3
1.3
V
VCE(sat)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
A
@ IC
IX45
IX55
IX56
IX65
IX75
IX76
IX85
IX86
IX97
IX45
IX55
IX56
IX65
IX75
IX76
IX85
IX86
IX97
Chip
type
Insulated Gate Bipolar Transistors
High Gain
Low
Gain
5.00 x 4.00
6.00 x 4.00
6.20 x 5.20
6.30 x 6.30
6.86 x 6.86
8.90 x 7.14
12.17 x 7.14
13.98 x 9.02
15.81 x 12.5
5.00 x 4.00
6.00 x 4.00
6.20 x 5.20
6.30 x 6.30
6.86 x 6.86
8.90 x 7.14
12.17 x 7.14
13.98 x 9.02
15.81 x 12.5
mm
197
236
244
248
270
351
479
550
622
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
157
157
205
248
270
281
281
355
492
157
157
205
248
270
281
281
355
492
mils
197
236
244
248
270
351
479
550
622
Chip Size
dimensions
10 mil x 3
15 mil x 3
15 mil x 3
15 mil x 4
15 mil x 3
15 mil x 4
12 mil x 4
12 mil x 6
15 mil x 6
10 mil x 3
15 mil x 3
15 mil x 3
15 mil x 4
15 mil x 3
15 mil x 4
12 mil x 4
12 mil x 6
15 mil x 6
Source
bond wire
recommended
© 2008 IXYS All rights reserved
IXGH28N60B3
IXGH36N60B3
IXGH48N60B3
IXGH56N60B3
IXGH64N60B3
IXGH72N60B3
IXGH90N60B3
IXGK120N60B3
IXGB200N60B3
IXGH28N60A3
IXGH36N60A3
IXGH48N60A3
IXGH56N60A3
IXGH64N60A3
IXGH72N60A3
IXGH90N60A3
IXGK120N60A3
IXGN360N60A3
Equivalent
device
data sheet
6
Low
Gain
600
1200
600
V
VCES
2.7
2.7
2.5
3.4
3.5
2.2
2.9
2.5
3.0
2.0
2.7
1.8
2.5
2.0
2.7
1.8
2.5
1.6
2.5
1.35
V
VCE(sat)
10
16
20
20
20
7
7
12
12
20
20
20
20
20
20
20
20
20
20
20
A
@ IC
IX3Z
IX4Z
IX5Z
IX4Z
IX5Z
IX2X
IX2X
IX3X
IX3X
IX4X
IX4X
IX5Y
IX5Y
IX62
IX62
IX7Y
IX7Y
IX9X
IX9X
IX9X
Chip
type
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
3.17
3.17
3.60
3.60
4.70
4.70
6.59
6.59
6.52
6.52
7.16
7.16
10.60
10.60
10.60
3.60 x 3.60
4.30 x 5.20
6.20 x 5.20
4.30 x 5.20
6.20 x 5.20
3.17
3.17
4.39
4.39
5.65
5.65
6.59
6.59
8.65
8.65
8.89
8.89
14.20
14.20
14.20
mm
mils
142 x 142
169 x 205
244 x 205
169 x 205
244 x 205
125 x 125
125 x 125
173 x 142
173 x 142
222 x 185
222 x 185
259 x 259
259 x 259
341 x 257
341 x 257
350 x 282
350 x 282
559 x 417
559 x 417
559 x 417
Chip Size
dimensions
12 mil x 1
10 mil x 2
12 mil x 3
10 mil x 2
12 mil x 3
10 mil x 1
12 mil x 1
12 mil x 1
12 mil x 1
10 mil x 2
10 mil x 2
12 mil x 3
12 mil x 3
12 mil x 4
12 mil x 4
12 mil x 4
12 mil x 4
15 mil x 6
15 mil x 6
15 mil x 6
Source
bond wire
recommended
Notes:
1. Recommended Gate bond wire: 5 mil for chip 2X; 8 mil for chips 3X, 3Z., 4X, 5Y, 5Z, 7Y; 12 mil for chip 9X
2. Dice are tested to Vsat limits as indicated. Maximum current 20A is limited by test equipment.
3. Recommended die processing thermal budget 300 deg. C for 5 minutes; maximum temperature should not to exceed 360 deg. C
4. This table lists active chips only
IXSD10N60B2-3Z
IXSD20N60B2-4Z
IXSD30N60B2-5Z
S-Series
IXGD20N120B-4Z
IXGD28N120B-5Z
IXGD7N60B-2X
IXGD7N60C-2X
IXGD16N60B2-3X
IXGD16N60C2-3X
IXGD30N60B2-4X
IXGD30N60C2-4X
IXGD40N60B2-5Y
IXGD40N60C2-5Y
IXGD50N60B2-62
IXGD50N60C2-62
IXGD60N60B2-7Y
IXGD60N60C2-7Y
IXGD120N60B-9X
IXGD120N60C2-9X
IXGD200N60A2-9X
TJM = 150°C
Type
G-Series
Insulated Gate Bipolar Transistors
High Gain
© 2008 IXYS All rights reserved
IXSP10N60B2
IXSH20N60B2
IXSH30N60B2
IXGH20N120B
IXGH28N120B
IXGP7N60B
IXGP7N60C
IXGH16N60B2
IXGH16N60C2
IXGH30N60B2
IXGH30N60C2
IXGH40N60B2
IXGH40N60C2
IXGH50N60B2
IXGH50N60C2
IXGH60N60B2
IXGH60N60C2
IXGK120N60B
IXGK120N60C2
IXGN200N60A2
Equivalent
device
data sheet
7
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
75
100
20
25
50
75
100
150
A
IC
2.30
2.30
2.80
2.00
1.90
1.90
1.90
2.15
2.60
2.60
2.75
2.20
2.10
2.10
2.10
2.40
VCE(sat)
TVJ =
25°C
125°C
typ. V
typ. V
NPT3 is an improved NPT design
Square RBSOA
Short circuit rated
reduced VCEsat
reduced switching losses
soft switching for good EMC behaviour
optimized for switching frequencies from 10 kHz up to 25 kHz
① Not for new design
1700
IXED75N170
IXED100N170
150
°C
V
1200
TVJM
VCES
IXED15N120 ①
IXED25N120
IXED50N120
IXED75N120
IXED100N120
IXED150N120
Type
75
100
20
25
50
75
100
150
A
@IC
25.0
32.0
2.8
3.2
6.3
9.2
11.8
21.0
20
25
50
75
100
150
75
100
19.0
27.0
A
@IC
1.8
2.3
4.7
7.8
10.1
15.0
Eon
Eoff
Inductive Load
TVJ = 125 °C
mJ
mJ
B
Short
Circuit
Proof
IGBT E-Series with improved NPT³ technology
A
630
880
100
195
470
710
985
1110
nC
Qg(on)
L
Tolerance
5
4
tbd
10
5
5
4
3
Internal
Gate
Resistance
Ω
•
•
11.9
13.6
±0.05 ±0.05 ±0.05
±0.05
1.2
1.2
mm
Si
thickn.
8
1.2 210 ±15
1.2
1.1 130 ±20
1.2
1.2
1.2
1.2
1.2
11.9
13.6
1.1
1.2
1.2
1.2
1.2
1.2
4.6
6.5
9.0
11.0
12.6
12.0
5.7
6.6
9.1
11.0
12.6
12.0
© 2008 IXYS All rights reserved
bondable
•
•
•
•
•
•
M
mm
B
mm
L
mm
Dimensions
A
mm
M
100
200
300
IXFD80N10Q-8X
IXFD170N10-9X
IXFD230N10-9Y
IXFD88N20Q-82
IXFD120N20-9X
IXFD180N20-9Y
IXFD40N30Q-72
IXFD52N30Q-82
IXFD73N30Q-8Y
IXFD90N30-9X
IXFD130N30-9Y
0.095
0.075
0.050
0.040
0.028
0.035
0.020
0.014
0.018
0.011
0.007
0.007
0.005
IX72
IX82
IX8Y
IX9X
IX9Y
IX82
IX9X
IX9Y
IX8X
IX9X
IX9Y
IX9X
IX9Y
IX9X
IX9Y
Chip
type
8.89 x 7.16
12.17 x 7.14
13.97 x 9.02
14.20 x 10.60
15.81 x 14.31
12.17 x 7.14
14.20 x 10.60
15.81 x 14.31
12.19 x 7.19
14.20 x 10.60
15.81 x 14.31
14.20 x 10.60
15.81 x 14.31
14.20 x 10.60
15.81 x 14.31
mm
mils
350
479
550
559
623
x
x
x
x
x
282
281
355
417
563
479 x 281
559 x 417
623 x 563
480 x 283
559 x 417
623 x 563
559 x 417
623 x 563
559 x 417
623 x 563
Chip Size
dimensions
This table listgs active chips only. Please contact factory for older designs.
85
IXFD180N085-9X
IXFD280N085-9Y
0.007
0.005
Ω
V
70
RDS(ON)
max.
VDSS
max.
IXFD180N07-9X
IXFD340N07-9Y
Type
HiPerFETTM Power MOSFET
15 mil x 3
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 12
15 mil x 4
15 mil x 6
12 mil x 12
15 mil x 4
15 mil x 6
12 mil x 12
15 mil x 6
12 mil x 12
15 mil x 6
12 mil x 12
Source bond wire
recommended
IXFH40N30Q
IXFH52N30Q
IXFK73N30Q
IXFK90N30
IXFN130N30
IXFH88N20Q
IXFK120N20
IXFN180N20
IXFH80N10Q
IXFK170N10
IXFN230N10
IXFK180N085
IXFN280N085
IXFK180N07
IXFN340N07
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
9
This class of Power MOSFET uses IXYS' HDMOS
process, which improves the ruggedness of the
MOSFET while reducing the reverse recovery time of
the fast intrinsic diode to 250 ns or less at elevated
(150°C) junction temperature. The performance of
the fast intrinsic diode is comparable to discrete high
voltage diodes and is tailored to minimize power
dissipation and stress in the MOSFET.
The High Performance MOSFET family of Power
MOSFETs is designed to provide superior dv/dt
performance while eliminating the need for discrete,
fast recovery "free wheeling diodes" in a broad
range of power switching applications.
HiPerFETTM Power MOSFETs
0.350
0.250
0.170
0.140
0.130
0.090
0.090
IX72
IX82
IX8Y
IX9X
IX94
IX95
IX9Y
IX82
IX84
IX8Y
IX9X
IX94
IX95
IX9Y
Chip
type
8.89 x 7.16
12.17 x 7.14
13.97 x 9.02
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
12.17 x 7.14
12.17 x 7.14
13.97 x 9.02
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
mm
350
479
550
559
559
623
623
x
x
x
x
x
x
x
x
x
x
x
x
x
x
282
281
355
417
417
492
563
281
281
355
417
417
492
563
mils
479
479
550
559
559
623
623
Chip Size
dimensions
This table listgs active chips only. Please contact factory for older designs.
600
IXFD23N60Q-72
IXFD30N60Q-82
IXFD36N60Q-8Y
IXFD44N60-9X
IXFD52N60Q2-94
IXFD70N60Q2-95
IXFD60N60-9Y
0.150
0.150
0.110
0.100
0.085
0.070
0.060
Ω
V
500
RDS(ON)
max.
VDSS
max.
IXFD40N50Q-82
IXFD40N50Q2-84
IXFD48N50Q-8Y
IXFD55N50-9X
IXFD66N50Q2-94
IXFD80N50Q2-95
IXFD80N50-9Y
Type
HiPerFETTM Power MOSFET
15 mil x 3
15 mil x 4
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
15 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
Source bond wire
recommended
IXFH23N60Q
IXFH30N60Q
IXFK36N60Q
IXFK44N60
IXFK52N60Q2
IXFB70N60Q2
IXFN60N60
IXFH40N50Q
IXFH40N50Q2
IXFK48N50Q
IXFK55N50
IXFK66N50Q2
IXFB80N50Q2
IXFN80N50
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
10
The HiPerFETTM series of Power MOSFETs have an
extended stress capability in applications where the
intrinsic "free-wheeling diode" is used. Both static
and dynamic dv/dt withstand capability have been
improved to offer a significant margin of safety in
high stress conditions found in many types of
inductive load switching applications.
HiPerFETTMs offer extended dv/dt ruggedness
1000
1200
IXFD6N100Q-5U
IXFD10N100-7Y
IXFD14N100Q2-7F
IXFD14N100-8X
IXFD21N100Q-8Y
IXFD21N100F-8F
IXFD24N100-9X
IXFD24N100F-9F
IXFD38N100Q2-95
IXFD36N100-9Y
IXFD3N120-4U
4.500
2.000
1.200
1.000
0.750
0.520
0.520
0.420
0.420
0.280
0.270
0.500
0.330
0.220
IX4U
IX5U
IX7Y
IX7F
IX8X
IX8Y
IX8F
IX9X
IX9F
IX95
IX9Y
IX8Y
IX9X
IX9Y
IX82
IX8Y
IX9X
IX94
IX95
IX9Y
Chip
type
5.77 x 4.96
6.81 x 6.74
8.89 x 7.16
8.89 x 7.16
12.19 x 7.19
13.97 x 9.02
13.97 x 9.02
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
13.97 x 9.02
14.20 x 10.60
15.81 x 14.31
12.17 x 7.14
13.97 x 9.02
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
mm
281
355
417
417
492
563
x
x
x
x
x
x
x
x
x
x
265
282
282
283
355
355
417
417
492
563
227 x 195
268
350
350
480
550
550
559
559
623
623
550 x 355
559 x 417
623 x 563
x
x
x
x
x
x
mils
479
550
559
559
623
623
Chip Size
dimensions
This table listgs active chips only. Please contact factory for older designs.
900
IXFD24N90Q-8Y
IXFD26N90-9X
IXFD39N90-9Y
0.440
0.350
0.250
0.250
0.170
0.160
Ω
V
800
RDS(ON)
max.
VDSS
max.
IXFD23N80Q-82
IXFD27N80Q-8Y
IXFD34N80-9X
IXFD38N80Q2-94
IXFD50N80Q2-95
IXFD44N80-9Y
Type
HiPerFETTM Power MOSFET
12 mil x 1
10 mil x 2
15 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
12 mil x 6
15 mil x 6
12 mil x 12
15 mil x 4
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
Source bond wire
recommended
IXFP3N120
IXFH6N100Q
IXFH10N100
IXFH14N100Q2
IXFH14N100
IXFK21N100Q
IXFK21N100F
IXFK24N100
IXFK24N100F
IXFB38N100Q2
IXFN36N100
IXFK24N90Q
IXFK26N90
IXFN39N90
IXFH23N80Q
IXFK27N80Q
IXFK34N80
IXFK38N80Q2
IXFB50N80Q2
IXFN44N80
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
11
The newer ‘Q2-Class’ line combines the low gate
charge advantages of Q-Class with a double-metal
construction resul-ting in a new generation of
MOSFETs with an intrinsic gate resistance an order
of magnitude lower than conventional MOSFETs.
The resulting reduction in switching losses allows
large MOSFETs to operate up satisfactorily up to the
multi-megahertz region.
New ‘Q - class‘ HiPerFET MOSFETs (identified by
the suffix letter Q) are the result of a revolutionary
new chip design, which decreases the MOSFET‘s
total gate charge Qg and the Miller capacitance
Crss, while maintaining the ruggedness and fast
switching intrinsic diode of the company‘s current
HiPerFET product line. The result is a MOSFET with
dramatically improved switching efficiencies and
thus enabling higher frequency operation and
smaller power supplies.
‘Q - Class’ and ‘Q2 - Class’ HiPerFETTM MOSFETs
for Lower Gate Charge and Faster Switching
150
200
250
300
IXTD62N15P-5S
IXTD96N15P-6S
IXTD120N15P-7S
IXTD150N15P-8S
IXTD180N15P-88
IXTD50N20P-5S
IXTD74N20P-6S
IXTD96N20P-7S
IXTD120N20P-8S
IXTD140N20P-88
IXTD42N25P-5S
IXTD64N25P-6S
IXTD82N25P-7S
IXTD100N25P-8S
IXTD120N25P-88
IXTD36N30P-5S
IXTD52N30P-6S
IXTD69N30P-7S
IXTD88N30P-8S
IXTD102N30P-88
21
135
82
60
50
40
100
60
40
34
30
75
42
30
28
24
50
30
23
21
20
31
22
20
15
15
IX5S
IX6S
IX7S
IX8S
IX88
IX5S
IX6S
IX7S
IX8S
IX88
IX5S
IX6S
IX7S
IX8S
IX88
IX5S
IX6S
IX7S
IX8S
IX88
IX5S
IX6S
IX7S
IX8S
IX88
IX5S
Chip
type
6.20 x 5.20
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
6.20 x 5.20
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
6.20 x 5.20
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
6.20 x 5.20
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
6.20 x 5.20
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
6.20 x 5.20
mm
mils
244
270
351
438
525
244
270
351
438
525
244
270
438
438
525
244
270
351
438
525
244
270
351
438
525
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
205
270
281
281
281
205
270
281
281
281
205
270
281
281
281
205
270
281
281
281
205
270
281
281
281
244 x 205
Chip Size
dimensions
This table listgs active chips only. Please contact factory for older designs.
55
100
mΩ
V
IXTD75N10P-5S
IXTD110N10P-6S
IXTD140N10P-7S
IXTD170N10P-8S
IXTD200N10P-88
RDS(ON)
max.
VDSS
max.
IXTD110N055P-5S
Type
PolarHTTM MOSFET
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 3
Source bond wire
recommended
IXTP 36N30P
IXTQ 52N30P
IXTQ 69N30P
IXTQ 88N30P
IXTK 102N30P
IXTP 42N25P
IXTQ 64N25P
IXTQ 82N25P
IXTQ 100N25P
IXTK 120N25P
IXTP 50N20P
IXTQ 74N20P
IXTQ 96N20P
IXTQ 120N20P4
IXTK 140N20P
IXTP 62N15P
IXTQ 96N15P
IXTQ 120N15P
IXTQ 150N15P
IXTK 180N15P
IXTP 75N10P
IXTQ 110N10P
IXTQ 140N10P
IXTQ 170N10P
IXTK 200N10P
IXTP 110N055P
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
12
PolarHT MOSFETs feature a proprietary cell design
and processing that has resulted in a MOSFET with
a 30% reduction in RDS(on) per unit area along with a
decrease in gate charge. IXYS has also reduced
the wafer thickness, which substantially reduces
thermal resistance. The combination of lower RDS(on),
lower gate charge and higher power dissipation
capability has resulted in a new family of MOSFETs,
which will increase the cost effectiveness in SMPS
applications. IXYS will also introduce HiPerFET
versions in which the trr of the body diode is reduced
to make them suitable for phase-shift bridges, motor
control and Uninterruptible Power Supply
applications.
PolarHT TM MOSFETs for very low RDS(on)
200
250
300
500
IXFD74N20P-6S
IXFD96N20P-7S
IXFD120N20P-8S
IXFD140N20P-88
IXFD100N25P-8S
IXFD120N25P-88
IXFD52N30P-6S
IXFD69N30P-7S
IXFD88N30P-8S
IXFD102N30P-88
IXFD12N50P-4J
IXFD16N50P-5J
IXFD22N50P-63
IXFD26N50P-6J
IXFD30N50P-67
IXFD36N50P-7J
IXFD44N50P-8J
IXFD64N50P-9J
IXFD80N50P-93
0.5
0.4
0.27
0.23
0.2
0.17
0.14
0.085
0.065
0.066
0.049
0.04
0.033
0.027
0.024
0.034
0.024
0.022
0.018
0.024
0.017
0.013
0.011
IX4J
IX5J
IX63
IX6J
IX67
IX7J
IX8J
IX9J
IX93
IX6S
IX7S
IX8S
IX88
IX8S
IX88
IX6S
IX7S
IX8S
IX88
IX6S
IX7S
IX8S
IX88
IX6S
IX7S
IX8S
IX88
Chip
type
5.00 x 5.00
6.20 x 5.20
6.30 x 6.30
6.86 x 6.86
8.65 x 6.52
8.91 x 7.15
11.13 x 7.15
10.60 x 10.60
14.20 x 10.60
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
11.12 x 7.14
13.34 x 7.14
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
6.86 x 6.86
8.9 x 7.14
11.12 x 7.14
13.34 x 7.14
mm
x
x
x
x
x
x
x
x
270
281
281
281
270
281
281
281
270
281
281
281
197
244
248
270
341
351
438
417
559
270
351
438
525
x
x
x
x
x
x
x
x
x
x
x
x
x
197
205
248
270
257
281
281
417
417
270
281
281
281
438 x 281
525 x 281
270
351
438
525
270
351
438
525
x
x
x
x
mils
270
351
438
525
Chip Size
dimensions
This table listgs active chips only. Please contact factory for older designs.
150
IXFD96N15P-6S
IXFD120N15P-7S
IXFD150N15P-8S
IXFD180N15P-88
0.015
0.011
0.009
0.0075
mΩ
V
100
RDS(ON)
max.
VDSS
max.
IXFD110N10P-6S
IXFD140N10P-7S
IXFD170N10P-8S
IXFD200N10P-88
Type
Polar HTTM HiPerFET Power MOSFET
12 mil x 2
12 mil x 2
12 mil x 4
15 mil x 2
12 mil x 4
12 mil x 4
15 mil x 4
12 mil x 6
12 mil x 6
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 6
15 mil x 6
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
Source bond wire
recommended
IXFP12N50P
IXFP16N50P
IXFH22N50P
IXFH26N50P
IXFH30N50P
IXFH36N50P
IXFH44N50P
IXFK64N50P
IXFK80N50P
IXFH52N30P
IXFH69N30P
IXFH88N30P
IXFK102N30P
IXFH100N25P
IXFK120N25P
IXFH74N20P
IXFH96N20P
IXFH120N20P
IXFK140N20P
IXFH96N15P
IXFH120N15P
IXFH150N15P
IXFK180N15P
IXFH110N10P
IXFH140N10P
IXFH170N10P
IXFK200N10P
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
13
1000
1200
IXFD15N100P-76
IXFD20N100P-85
IXFD26N100P-86
IXFD32N100P-96
IXFD44N100P-97
IXFD38N100P-99
IXFD16N120P-85
IXFD20N120P-86
IXFD26N120P-96
IXFD30N120P-97
IXFD32N120P-99
0.95
0.57
0.46
0.35
0.31
0.76
0.57
0.39
0.32
0.22
0.21
1..44
1.1
0.85
0.72
0.6
0.5
0.4
0.27
0.19
0.14
IX85
IX86
IX96
IX97
IX99
IX76
IX85
IX86
IX96
IX97
IX99
IX4J
IX5J
IX63
IX6J
IX67
IX7J
IX8J
IX9J
IX93
IX9S
IX4J
IX5J
IX63
IX6J
IX67
IX7J
IX8J
IX9J
IX93
Chip
type
12.17 x 7.14
13.98 x 9.02
14.2 x 10.6
15.81 x 12.5
15.81 x 14.31
8.90 x 7.14
12.17 x 7.14
13.98 x 9.02
14.2 x 10.6
15.81 x 12.5
15.81 x 14.31
5.00 x 5.00
6.20 x 5.20
6.30 x 6.30
6.86 x 6.86
8.65 x 6.52
8.90 x 7.14
11.12 x 7.14
10.6 x 10.6
14.2 x 10.6
15.81 x 12.5
5.00 x 5.00
6.20 x 5.20
6.30 x 6.30
6.86 x 6.86
8.65 x 6.52
8.91 x 7.15
11.13 x 7.15
10.60 x 10.60
14.20 x 10.60
mm
479
550
559
622
622
351
479
550
559
622
622
197
244
248
270
341
351
438
417
559
622
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
281
355
417
492
563
281
281
355
417
492
563
197
205
248
270
257
281
281
417
417
492
197
205
248
270
257
281
281
417
417
mils
197
244
248
270
341
351
438
417
559
Chip Size
dimensions
This table listgs active chips only. Please contact factory for older designs.
800
IXFD7N80P-4J
IXFD10N80P-5J
IXFD12N80P-63
IXFD14N80P-6J
IXFD16N80P-67
IXFD20N80P-7J
IXFD24N80P-8J
IXFD32N80P-9J
IXFD44N80P-93
IXFD60N80P-9S
0.74
0.55
0.4
0.33
0.27
0.24
0.19
0.14
0.1
mΩ
V
600
RDS(ON)
max.
VDSS
max.
IXFD10N60P-4J
IXFD14N60P-5J
IXFD18N60P-63
IXFD22N60P-6J
IXFD26N60P-67
IXFD30N60P-7J
IXFD36N60P-8J
IXFD48N60P-9J
IXFD64N60P-93
Type
Polar HVTM HiPerFET Power MOSFET
12
12
15
15
15
15
12
12
15
15
15
12
12
12
15
12
12
15
12
12
12
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
4
6
6
6
6
4
4
6
6
6
6
2
2
4
2
4
4
4
6
6
8
12 mil x 2
12 mil x 2
12 mil x 4
15 mil x 2
12 mil x 4
12 mil x 4
15 mil x 4
12 mil x 6
12 mil x 6
Source bond wire
recommended
IXFH16N120P
IXFN20N120P
IXFN26N120P
IXFB30N120P
IXFN32N120P
IXFH15N100P
IXFH20N100P
IXFK26N100P
IXFN32N100P
IXFN44N100P
IXFN38N100P
IXFP7N80P
IXFP10N80P
IXFH12N80P
IXFH14N80P
IXFH16N80P
IXFH20N80P
IXFH24N80P
IXFN32N80P
IXFN44N80P
IXFN60N80P
IXFP10N60P
IXFH14N60P
IXFH18N60P
IXFH22N60P
IXFH26N60P
IXFH30N60P
IXFH36N60P
IXFK48N60P
IXFK64N60P
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
14
600
800
1000
1200
IXTD1R4N60P-11
IXTD2N60P-1J
IXTD3N60P-2J
IXTD4N60P-23
IXTD5N60P-3J
IXTD7N60P-37
IXTD10N60P-4J
IXTD14N60P-5J
IXTD18N60P-63
IXTD22N60P-6J
IXTD26N60P-67
IXTD30N60P-7J
IXTD2N80P-2J
IXTD4N80P-3J
IXTD08N100P-1A
IXTD1N100P-1C
IXTD1R4N100P-2A
IXTD2N100P-2C
IXTD3N100P-3C
IXTD06N120P-1A
IXTD08N120P-1C
IXTD1N120P-2A
IXTD1R4N120P-2C
IXTD2R4N120P-3C
32
25
20
13
7.5
20
15
11
7.5
4.8
6
4
9
4.7
2.8
1.9
1.6
1.1
10
0.55
0.42
0.35
0.23
0.24
6
3.5
2.5
1.3
1
0.8
0.5
0.4
0.27
0.23
0.2
0.17
0.14
Ω
V
500
RDS(ON)
max.
VDSS
max.
IXTD1R6N50P-11
IXTD2R4N50P-1J
IXTD3N50P-2J
IXTD5N50P-23
IXTD6N50P-3J
IXTD8N50P-37
IXTD12N50P-4J
IXTD16N50P-5J
IXTD22N50P-63
IXTD26N50P-6J
IXTD30N50P-67
IXTD36N50P-7J
IXTD44N50P-8J
Type
IX1A
IX1C
IX2A
IX2C
IX3C
IX1A
IX1C
IX2A
IX2C
IX3C
IX2J
IX3J
IX11
IX1J
IX2J
IX23
IX3J
IX37
IX4J
IX5J
IX63
IX6J
IX67
IX7J
IX11
IX1J
IX2J
IX23
IX3J
IX37
IX4J
IX5J
IX63
IX6J
IX67
IX7J
IX8J
Chip
type
PolarHVTM Power MOSFET
x
x
x
x
x
x
x
x
x
x
x
x
1.91
2.29
2.79
2.79
3.60
4.20
5.00
5.20
6.30
6.86
6.52
7.15
2.29 x 2.29
2.54 x 2.54
2.79 x 2.79
3.89 x 2.79
4.39 x 3.6
2.29 x 2.29
2.54 x 2.54
2.79 x 2.79
3.89 x 2.79
4.39 x 3.6
2.79 x 2.79
3.60 x 3.60
1.91
2.29
2.79
3.69
3.60
4.20
5.00
6.20
6.30
6.86
8.65
8.91
1.91 x 1.91
2.29 x 2.29
2.79 x 2.79
3.69 x 2.79
3.60 x 3.60
4.20 x 4.20
5.00 x 5.00
6.20 x 5.20
6.30 x 6.30
6.86 x 6.86
8.65 x 6.52
8.91 x 7.15
11.13 x 7.15
mm
75
90
110
110
142
165
197
205
248
270
257
281
90
100
110
153
173
90
100
110
153
173
x
x
x
x
x
x
x
x
x
x
90
100
110
110
142
90
100
110
110
142
110 x 110
142 x 142
75 x
90 x
110 x
153 x
142 x
165 x
197 x
244 x
248 x
270 x
341 x
351 x
75
90
110
110
142
165
197
205
248
270
257
281
281
mils
75 x
90 x
110 x
153 x
142 x
165 x
197 x
244 x
248 x
270 x
341 x
351 x
438 x
Chip Size
dimensions
10
10
10
12
12
10
10
10
12
12
mil
mil
mil
mil
mil
mil
mil
mil
mil
mil
x
x
x
x
x
x
x
x
x
x
1
1
1
1
2
1
1
1
1
2
12 mil x 1
15 mil x 1
10 mil x 1
10 mil x 1
12 mil x 1
12 mil x 1
15 mil x 1
15 mil x 1
12 mil x 2
12 mil x 2
12 mil x 4
15 mil x 2
12 mil x 4
12 mil x 4
10 mil x 1
10 mil x 1
12 mil x 1
12 mil x 1
15 mil x 1
15 mil x 1
12 mil x 2
12 mil x 2
12 mil x 4
15 mil x 2
12 mil x 4
12 mil x 4
15 mil x 4
Source bond wire
recommended
IXTP06N120P
IXTP08N120P
IXTP1N120P
IXTP1R4N120P
IXTP2R4N120P
IXTP08N100P
IXTP1N100P
IXTP1R4N100P
IXTP2N100P
IXTP3N100P
IXTP2N80P
IXTP4N80P
IXTP1R4N60P
IXTP2N60P
IXTP3N60P
IXTP4N60P
IXTP5N60P
IXTP7N60P
IXTP10N60P
IXTQ14N60P
IXTQ18N60P
IXTQ22N60P
IXTH26N60P
IXTH30N60P
IXTP1R6N50P
IXTP2R4N50P
IXTP3N50P
IXTP5N50P
IXTP6N50P
IXTP8N50P
IXTP12N50P
IXTP16N50P
IXTQ22N50P
IXTQ26N50P
IXTQ30N50P
IXTH36N50P
IXTQ44N50P
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
This table listgs active chips only. Please
contact factory for older designs.
15
30
110
IX1M
IX1M
Chip
type
200
500
IXTD16P20-5B
IXTD24P20-7B
IXTD8P50-5B
IXTD11P50-7B
IXTD10P60-7B
1.20
0.75
1.05
0.22
0.16
0.08
0.06
Ω
V
100
RDS(ON)
max.
VDSS
max.
IXTD36P10-5B
IXTD50P10-7B
Type
IX5B
IX7B
IX7B
IX5B
IX7B
IX5B
IX7B
Chip
type
P-Channel Power MOSFET
500
1000
Ω
V
IXTD01N100D-1M
RDS(ON)
max.
VDSS
max.
IXTD02N50D-1M
Type
6.59 x 6.59
8.84 x 7.18
8.84 x 7.18
6.59 x 6.59
8.84 x 7.18
6.59 x 6.59
8.84 x 7.18
mm
mils
259 x 259
348 x 283
348 x 283
259 x 259
348 x 283
259 x 259
348 x 283
mils
77 x 66
77 x 66
Chip Size
dimensions
1.96 x 1.68
1.96 x 1.68
mm
Chip Size
dimensions
N-Channel Depletion Mode MOSFET
12 mil x 3
15 mil x 3
15 mil x 3
12 mil x 3
15 mil x 3
12 mil x 3
15 mil x 3
Source bond wire
recommended
3 mil x 1
3 mil x 1
Source bond wire
recommended
IXTH7P50
IXTH11P50
IXTH10P60
IXTH16P20
IXTH24P20
IXTH36P10
IXTH50P10
Equivalent
device
data sheet
IXTP01N100D
IXTP02N50D
Equivalent
device
data sheet
© 2008 IXYS All rights reserved
16
There are many applications in which
IXTP01N100D and IXTP02N05D can be used:
current regulators, off-line linear regulators, input
transient voltage suppressors, input current inrush
Depletion mode MOSFETs, unlike the regular
enhancement type MOSFETs, requires a negative
gate bias to turn it off. Consequently they remain
on at or above zero gate bias voltage but
otherwise have similar MOSFET characteristics.
Their Rds(on) and breakdown voltage have a
positive temperature coefficient, increasing the
gate bias voltage increases the gate channel
conductivity and so decreases Rds(on) to some
extent and there is a usable intrinsic diode. IXYS
Corporation’s IXTP01N100D is a depletion mode
MOSFET rated at VDSS = 1000 Volts and ID = 100
mA and its RDS(on) = 110 Ohms at VGS = 0 Volt. The
other depletion mode MOSFET, IXTP02N05D, is
rated at VDSS = 500 Volts, ID = 200 mA, while its
RDS(on) = 30 Ohms. The minimum required gate bias
to turn them off is –5 Volts. They are both housed
in TO-220 package and can dissipate 25 Watts at
TC = 250C.
Depletion Mode MOSFETs
Dimensions in inch and [mm] (1" = 25.4 mm)
IX1A
IX1C
IX1J
IX1M
SQ
0.054 [1.38]
S
0.090 [2.29]
0.054 [1.38]
0.016 [0.41]
I
X
1
J
G
0.012 [0.29]
0.090 [2.29]
IX2A
0.043 [1.10]
0.016 [0.41]
SQ
IX11
S
0.075 [1.91]
IX11
G
0.012 [0.29]
0.075 [1.91]
IXYS reserves the right to change limits, test conditions and dimensions
17
Dimensions in inch and [mm] (1" = 25.4 mm)
IX2C
IX2J
0.070 [1.78]
S
IX2J
0.110 [2.79]
0.070 [1.78]
0.016 [0.41] SQ
0.048 [1.23]
0.020 [0.51]
G
0.012 [0.29]
0.110 [2.79]
IX23
0.090 [2.28]
0.046 [1.17]
0.075 [1.91]
IX23
S
G
0.110 [2.79]
0.020 [0.50]
0.024 [0.60]
0.010 [0.26]
IX2X
0.012 [0.29]
0.099 [2.52]
0.153 [3.89]
IX3C
IX3J
0.095 [2.40]
0.142 [3.60]
0.025 [0.63]
0.024 [0.60]
S
IX
3J
0.013 [0.34]
0.047 [1.20]
0.095 [2.40]
G
0.142 [3.60]
18
© 2008 IXYS All rights reserved
Dimensions in inch and [mm] (1" = 25.4 mm)
IX4J
0.164 [4.17]
S
0.197 [5.00]
S
0.164 [4.17]
0.024 [0.60]
SQ
IX3X
IX4J
G
0.013 [0.34]
0.128 [3.26]
0.197 [5.00]
IX4U
IX4X
IX4Z
IX45
IXYS reserves the right to change limits, test conditions and dimensions
19
0.031 [0.77]
IX5J
S
G
S
0.013 [0.33]
0.205 [5.20]
0.209 [5.30]
0.012 [0.30]
IX5J
0.169 [4.30]
IX5B
0.041 [1.03]
Dimensions in inch and [mm] (1" = 25.4 mm)
0.046 [1.18]
0.049 [1.25]
0.244 [6.20]
IX5S
IX5U
IX5Y
IX5Z
20
© 2008 IXYS All rights reserved
Dimensions in inch and [mm] (1" = 25.4 mm)
IX55
IX56
IX6J
IX6S
0.033 [0.84]
0.270 [6.86]
SQ
S
S
IX6J
G
0.014 [0.34]
0.270 [6.86]
IX62
IX63
0.086 [2.19]
0.129 [3.28]
0.206 [5.23] SQ
S
S
G
0.257 [6.52]
0.169 [4.30]
IX62A
S
0.248 [6.30]
0.044 [1.12]
0.083 [2.10]
0.035 [0.88]
0.060 [1.51]
IX63
G
0.014 [0.35]
0.086 [2.18]
0.158 [4.01]
0.014 [0.35]
0.032 [0.80]
0.341 [8.65]
IXYS reserves the right to change limits, test conditions and dimensions
SQ
0.248 [6.30]
21
Dimensions in inch and [mm] (1" = 25.4 mm)
IX65
IX67
0.306 [7.78]
IX67A
S
G
S
0.126 [3.19]
0.223 [5.65]
0.257 [6.52]
0.039 [1.00]
0.032 [0.82]
0.014 [0.35]
0.341 [8.65]
IX7B
IX7J
G
0.281 [7.15]
S
IX7J
0.142 [3.60]
0.039 [1.00]
0.033 [0.84]
S
0.013 [0.34]
0.351 [8.91]
IX7F
22
IX7S
© 2008 IXYS All rights reserved
Dimensions in inch and [mm] (1" = 25.4 mm)
IX7Y
± 0.062 [ ± 1.57]
S
S
0.119 [3.02]
0.282 [7.16]
IX7Y
S
G
0.050 [1.27]
IX72
5X
0.048 [1.21]
S
S
0.016 [0.41]
0.119 [3.02]
0.233 [5.91]
0.350 [8.89]
IX75
IX76
IX8F
IX8J
S
G
0.281 [7.15]
IX8J
0.132 [3.36]
0.048 [1.22]
0.048 [1.22]
S
0.013 [0.33]
0.438 [11.13]
IXYS reserves the right to change limits, test conditions and dimensions
23
Dimensions in inch and [mm] (1" = 25.4 mm)
IX8S
IX8X
IX8Y
IX82
IX84
IX85
24
© 2008 IXYS All rights reserved
Dimensions in inch and [mm] (1" = 25.4 mm)
IX86
IX88
IX9F
IX9J
0.045 [1.14]
0.014 [0.35]
S
0.417 [10.60]
S
IX9J
G
0.014 [0.35]
0.045 [1.14]
0.417 [10.60]
IX9X
IXYS reserves the right to change limits, test conditions and dimensions
IX9Y
25
Dimensions in inch and [mm] (1" = 25.4 mm)
IX93
0.115 [2.92]
0.131 [3.31]
IX94
0.134 [3.40]
0.099 [2.52]
0.013 [0.32]
0.417 [10.60]
S
0.124 [3.15]
S
0.193 [4.90]
0.016 [0.40]
G
IX93A
G
0.013 [0.32]
0.047 [1.20]
SQ
0.559 [14.20]
IX95
IX97
IX99
26
© 2008 IXYS All rights reserved
1200 1800
1600 2200
DWN2
DWN9
DWN17
DWP17
DWN21
DWP21
DWN35
DWP35
DWN50
DWP50
DWN75
DWP75
DWN110
DWP110
DWN340
DWN108
DWN347
① Mounted on DCB
800 1200
V
VRRM
DWN5
DWP5
Type
3.5
20.0
0.7
1.0
1.5
1.5
3.0
3.0
1.5
1.5
2.0
2.0
2.0
2.0
3.5
3.5
15.0
0.7
0.7
IR
VRRM
TVJM
typ. mA
Rectifier Diodes
150
°C
TVJM
253
788
12
20
31
31
42
41
59
58
78
76
115
118
253
253
416
12
12
IF(AV)M
rect. d=0.5
TC=100°C
A
0.16
0.05
2.80
1.80
1.10
1.10
0.90
0.90
0.65
0.65
0.50
0.50
0.33
0.35
0.16
0.16
0.10
2.80
2.80
typ.
K/W
RthJC ①
1.19
1.10
1.13
1.30
1.36
1.39
1.35
1.37
1.25
1.25
1.33
1.34
1.27
1.28
1.18
1.19
0.93
1.14
1.14
25°C
V
VF
TVJ =
1.12
1.01
1.05
1.26
1.35
1.37
1.33
1.36
1.20
1.22
1.31
1.33
1.23
1.25
1.12
1.12
1.09
1.05
1.05
125°C
V
300
600
7
30
50
50
80
80
80
80
150
150
200
200
300
300
300
7
7
A
@IF
3200
10500
150
300
320
320
500
500
630
630
900
900
1500
1500
3200
3200
5900
140
140
A
IFSM
50
400
tbd
tbd
tbd
tbd
tbd
tbd
50
50
50
50
50
50
50
50
300
tbd
tbd
© 2008 IXYS All rights reserved
45
275
tbd
tbd
tbd
tbd
tbd
tbd
11
11
12
12
24
24
45
45
235
tbd
tbd
6
50
tbd
tbd
tbd
tbd
tbd
tbd
0.64
0.64
1
1
3
3
6
6
50
tbd
tbd
Reverse Recovery
IRM
@IF
@-di/dt
25°C; VR=100V
A
A
A/µs
27
•
DWN108
DWN347
Tolerance
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
DWN2
DWN9
DWN17
DWP17
DWN21
DWP21
DWN35
DWP35
DWN50
DWP50
DWN75
DWP75
DWN110
DWP110
DWN340
•
•
•
•
DWN5
DWP5
Type
solderable
58
16
1204
684
518
518
346
346
259
259
198
198
125
125
58
58
32
1123
1123
Chips
per
Wafer
Rectifier Diodes
bonderable
-0.1
12.30
25.30
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
12.30
12.30
16.20
4.40
4.40
A
mm
-0.1
12.30
18.50
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
12.30
12.30
16.20
2.10
2.10
B
mm
Dimensions
±5%
0.315
0.315
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
mm
Sithickn.
© 2008 IXYS All rights reserved
DWP
DWN
28
600
1000
1200
DWEP8-06
DWEP12-06
DWEP15-06
DWEP23-06
DWEP25-06
DWEP35-06
DWEP55-06
DWEP75-06
DWEP3-10
DWEP10-10
DWEP18-10
DWEP20-10
DWEP30-10
DWEP50-10
DWEP70-10
DWEP6-12
DWEP9-12
DWEP17-12
DWEP19-12
DWEP29-12
DWEP49-12
DWEP69-12
① Mounted on DCB
200
V
VRRM
DWEP27-02
DWEP37-02
DWEP77-02
Type
2.0
4.0
7.0
7.0
14.0
17.0
20.0
2.0
4.0
7.0
7.0
14.0
17.0
20.0
1.5
1.5
3.0
7.0
7.0
14.0
17.0
20.0
5.0
11.0
20.0
IR
0.8xVRRM
125°C
mA
150
°C
TVJM
tbd
12
30
30
60
77
123
tbd
12
30
30
60
82
129
tbd
8
12
30
30
60
80
162
54
91
244
IF(AV)M
rect. d=0.5
TC=100°C
A
2.5
1.6
0.9
0.9
0.8
0.7
0.4
2.5
1.6
0.9
0.9
0.8
0.7
0.4
2.5
2.5
1.6
0.9
0.9
0.8
0.7
0.4
0.9
0.8
0.4
typ.
K/W
RthJC ①
2.55
2.55
2.60
2.50
2.35
2.19
1.77
2.65
2.65
2.43
2.35
2.24
2.12
1.89
1.65
1.45
1.65
1.53
1.53
1.73
1.58
1.31
1.09
1.03
0.98
TVJ =
25°C
V
FRED - Fast Recovery Epitaxial Diodes
2.19
2.19
2.19
2.19
1.94
1.89
1.54
2.09
2.09
2.04
1.99
1.79
1.68
1.57
1.48
1.31
1.48
1.33
1.38
1.48
1.38
1.12
0.84
0.87
0.81
V
VF
150
150
150
150
150
125
125
150
150
150
150
150
125
125
150
150
150
150
150
150
125
125
150
150
150
@
°C
5
12
30
30
60
50
75
6
12
30
36
60
50
75
8
8
16
30
43
70
75
75
30
100
120
A
@IF
80
75
200
200
500
500
800
40
75
200
200
500
500
800
50
100
100
250
300
550
600
1000
300
475
1200
A
IFSM
7
5
7
7
7
8.6
20
7
5
7
7
7
6.1
14
5
5
5
5
5
5
5
20
4
4
7.5
IRM
25°C; VR=100V
A
10
25
50
50
100
50
75
12
25
50
50
100
50
80
12
25
25
50
50
100
100
80
50
100
100
A
@IF
40
50
40
40
40
40
40
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
35
tbd
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A
@IF
© 2008 IXYS All rights reserved
100
100
100
100
100
100
200
100
100
100
100
100
120
200
100
100
100
100
100
100
100
200
100
100
200
Reverse Recovery
@-di/dt
t rr
VR=30V
A/µs
ns
50
50
100
100
200
200
350
50
50
100
100
200
200
350
50
50
50
100
100
200
200
350
100
200
350
A/µs
29
@-di/dt
Tolerance
DWEP6-12
DWEP9-12
DWEP17-12
DWEP19-12
DWEP29-12
DWEP49-12
DWEP69-12
DWEP3-10
DWEP10-10
DWEP18-10
DWEP20-10
DWEP30-10
DWEP50-10
DWEP70-10
DWEP8-06
DWEP12-06
DWEP15-06
DWEP23-06
DWEP25-06
DWEP35-06
DWEP55-06
DWEP75-06
DWEP27-02
DWEP37-02
DWEP77-02
Type
•
•
•
•
•
•
•
•
•
•
•
•
•
•
solderable
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1851
990
531
518
257
230
151
1612
990
531
518
257
230
151
1612
1851
990
531
518
257
230
151
518
257
151
Chips
per
Wafer
-0.1
2.40
3.25
5.50
4.45
6.20
8.65
8.91
3.60
3.25
5.50
4.45
6.20
8.65
8.91
3.60
2.40
3.25
5.50
4.45
6.20
8.65
8.91
4.45
6.20
8.91
A
mm
-0.1
2.40
3.25
3.50
4.45
6.20
4.95
7.22
1.80
3.25
3.50
4.45
6.20
4.95
7.22
1.80
2.40
3.25
3.50
4.45
6.20
4.95
7.22
4.45
6.20
7.22
B
mm
Dimensions
±5%
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
mm
Sithickn.
FRED - Fast Recovery Epitaxial Diodes
bonderable
© 2008 IXYS All rights reserved
30
400
600
DMLP04-04
DMLP06-04
DMLP10-04
DMLP15-04
DMLP20-04
DMLP23-06
•
•
•
•
•
•
•
•
•
•
DMLP04-03
DMLP06-03
DMLP10-03
DMLP15-03
DMLP20-03
DMLP04-04
DMLP06-04
DMLP10-04
DMLP15-04
DMLP20-04
Type
300
V
VRRM
solderable
DMLP04-03
DMLP06-03
DMLP10-03
DMLP15-03
DMLP20-03
Type
250
300
350
400
500
tbd
1
1
1
1
1
tbd
2.1
2.4
3.3
3.9
4.45
2.1
2.4
3.3
3.9
4.45
mm
2.1
2.4
3.3
3.9
4.45
2.1
2.4
3.3
3.9
4.45
mm
Dimensions
A
B
tbd
1.35
1.35
1.35
1.35
1.35
1.25
1.3
1.28
1.25
1.28
VF
at RT
V
3675
2700
1430
1020
780
3675
2700
1430
1020
780
6"
Number
of Chips
per Wafer
150
200
250
300
350
1
1
1
1
1
uA
IR
at 150°C
uA
Ir RT
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
mm
Si
thickness
tbd
1
1.09
1
1
1
0.95
1.05
0.95
0.95
0.95
VF
at 150°C
V
30
10
15
30
40
60
10
20
30
40
60
@ IF rated
current
A
tbd
100
150
300
400
550
100
150
300
400
550
A
IFSM
tbd
4
3.5
4
4
4
3
3
3
3
3
Reverse
Recovery IRM
A
FRED - Fast Recovery Epitaxial Diodes with metal field plate
bondable
30
10
20
30
40
60
10
20
30
40
60
A
IF
tbd
200
200
200
200
200
200
200
200
200
200
A/us
di/dt
Status
31
Development
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
© 2008 IXYS All rights reserved
tbd
45
45
45
45
45
35
35
35
35
35
ns
trr
300
400
600
1200
DWLP4-03
DWLP8-03
DWLP15-03
DWLP15-03A
DWLP23-03
DWLP23-03A
DWLP55-03
DWLP75-03
DWLP8-04
DWLP15-04
DWLP23-04
DWLP55-04
DWLP75-04
DWLP150-04
DWLP4-06
DWLP8-06A
DWLP8-06B
DWLP15-06A
DWLP15-06B
DWLP23-06A
DWLP23-06B
DWLP55-06
DWLP75-06
DWLP1-12
DWLP8-12
DWLP15-12
DWLP23-12
DWLP55-12
DWLP75-12
① Mounted on DCB
200
V
VRRM
DWLP4-02
DWLP15-02
DWLP15-02B
DWLP25-02
Type
0.20
0.25
0.50
1.00
2.50
4.00
0.20
0.25
0.25
0.50
0.50
1.00
2.00
2.50
4.00
0.25
0.50
1.00
2.50
4.00
8.50
0.20
0.25
0.50
0.50
1.00
1.00
2.50
4.00
0.20
0.50
0.50
0.20
IR
VRRM
TVJM
mA
150
°C
TVJM
tbd
9
14
29
48
78
11
12
11
21
16
40
30
62
99
14
24
46
67
117
148
13
15
25
29
51
41
72
117
14
29
25
46
IF(AV)M
rect. d=0.5
TC=100°C
A
25.0
2.50
1.60
0.90
0.65
0.40
2.80
2.50
2.50
1.60
1.60
0.90
0.90
0.65
0.40
2.50
1.60
0.90
0.65
0.40
0.35
2.80
2.50
1.60
1.60
0.90
0.90
0.65
0.40
2.80
1.60
1.60
0.90
typ.
K/W
RthJC ①
2.14
2.61
2.45
2.68
2.54
2.56
1.97
1.75
2.34
1.87
2.38
1.54
2.45
1.92
1.93
1.40
1.40
1.43
1.38
1.39
1.38
1.63
1.45
1.44
1.26
1.19
1.49
1.42
1.43
1.21
0.99
1.13
1.10
1.69
1.65
1.68
1.71
1.59
1.71
1.28
1.22
1.53
1.23
1.44
1.17
1.53
1.23
1.24
0.97
0.98
1.06
0.99
1.03
1.12
1.07
1.01
1.02
0.93
0.84
1.07
0.99
0.95
0.88
0.82
0.84
0.85
VF
TVJ =
25°C 150°C
V
V
1
6
12
30
60
100
5
6
6
12
12
30
30
60
100
6
12
30
60
100
300
5
6
12
12
30
30
60
100
5
12
12
30
A
@IF
Low Leakage Fast Recovery Epitaxial Diodes
20
40
90
200
500
800
40
50
50
110
110
250
250
600
1000
60
110
300
600
1000
1200
40
60
110
110
300
300
600
1000
80
140
140
325
A
IFSM
2.3
5.0
5.7
6.7
7.0
7.4
1.8
2.6
1.4
2.9
1.5
3.5
2.0
4.0
4.5
1.4
2.5
2.5
3.5
4.0
9.5
1.4
1.0
1.4
1.4
3.0
1.9
2.8
3.3
1.2
2.4
1.1
2.0
IRM
25°C; VR=100V
A
1
12
25
50
130
200
10
12
12
25
25
50
50
130
200
12
25
50
130
200
200
10
12
25
25
50
50
130
200
10
25
25
50
tbd
40
40
40
40
40
30
35
30
35
35
35
30
35
35
30
30
30
30
30
30
30
30
30
30
30
25
30
30
25
25
25
25
tbd
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A
@IF
© 2008 IXYS All rights reserved
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
Reverse Recovery
@IF
@-di/dt
trr
VR=30V
A
A/µs
typ. ns
tbd
50
100
200
300
400
50
50
50
100
100
200
200
300
400
50
100
200
300
400
800
50
50
100
100
200
200
300
400
50
100
100
200
A/µs
@-di/dt
32
Tolerance
•
•
•
•
DWLP4-06
DWLP8-06A
DWLP8-06B
DWLP15-06A
DWLP15-06B
DWLP23-06A
DWLP23-06B
DWLP55-06
DWLP75-06
DWLP1-12
DWLP8-12
DWLP15-12
DWLP23-12
DWLP55-12
DWLP75-12
•
•
•
DWLP8-04
DWLP15-04
DWLP23-04
DWLP55-04
DWLP75-04
DWLP150-04
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
DWLP4-03
DWLP8-03
DWLP15-03
DWLP15-03A
DWLP23-03
DWLP23-03A
DWLP55-03
DWLP75-03
•
•
•
•
•
DWLP4-02
DWLP15-02
DWLP15-02B
DWLP25-02
Type
solderable
4545
1612
990
531
230
151
1960
1612
1612
990
990
531
531
230
151
1612
990
531
230
151
74
1960
1612
990
990
531
531
230
151
1960
990
990
518
Chips
per
Wafer
-0.1
1.52
3.60
3.25
5.50
8.65
8.91
3.00
3.60
3.60
3.25
3.25
5.50
5.50
8.65
8.91
3.60
3.25
5.50
8.65
8.91
13.00
3.00
3.60
3.25
3.25
5.50
5.50
8.65
8.91
3.00
3.25
3.25
4.45
A
mm
-0.1
1.52
1.80
3.25
3.50
4.95
7.22
1.80
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
1.80
3.25
3.50
4.95
7.22
9.77
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
1.80
3.25
3.25
4.45
B
mm
Dimensions
±5%
0.46
0.46
0.46
0.46
0.46
0.46
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.38
0.38
0.38
0.38
0.38
0.38
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
mm
Sithickn.
Low Leakage Fast Recovery Epitaxial Diodes
bonderable
© 2008 IXYS All rights reserved
33
1600-1800
4000-4500
DWHP6
DWHP15
DWHP25
DWHP55
DWHP68
DWHP150
DWHP200
DWHP205
1200
DWHP4
DWHP10
DWHP14
DWHP16
DWHP23
DWHP56 slow
DWHP69 slow
DWHP150 slow
DWHP56
DWHP69
DWHP150
DWHP200
tbd
5
16
42
95
200
365
550
10
5
10
10
50
60
100
150
125
200
325
500
1
1
3
5
10
10
35
60
100
150
250
125
200
325
500
uA
V
600
Ir RT
VRRM
DWHP0.5 slow
DWHP0.5
DWHP4
DWHP10
DWHP14
DWHP16
DWHP23
DWHP56 slow
DWHP69 slow
DWHP150 slow
DWHP200 slow
DWHP56
DWHP69
DWHP150
DWHP200
Type
tbd
0.15
0.35
1
2
4
7.5
11
1
1.5
3.5
3.5
5
8
12
20
12
20
30
45
0.1
0.1
1
1.5
3.5
3.5
5
8
12
20
30
12
20
30
45
mA
IR at 125°C
tbd
2.61
2.89
2.65
2.73
2.71
2.57
2.63
2.45
2.58
2.45
2.45
2.59
2.04
2.04
2.04
2.42
2.44
2.4
2.46
2
3.5
2.25
2.38
2.26
2.26
2.39
1.54
1.55
1.55
1.55
2.18
2.2
2.16
2.24
VF
at RT
V
tbd
2.61
2.89
2.65
2.73
2.71
2.57
2.63
2.18
2.28
2.01
2.2
2.29
1.76
1.83
1.69
2.14
2.16
2.13
2.18
2.22
3.55
2.03
2.14
2.05
2.05
2.16
1.43
1.45
1.45
1.44
1.95
1.97
1.93
2.01
VF
at 150°C
V
SONIC diodes with glass passivation
tbd
2
10
20
40
60
100
150
5
10
20
20
30
60
100
150
60
100
150
250
1.2
1.2
5
10
20
20
30
60
100
150
250
60
100
150
250
@ IF
rated current
A
tbd
25
80
200
450
650
1100
1600
35
65
135
135
180
550
750
1400
430
930
1130
1800
tbd
tbd
40
80
150
150
200
550
750
1400
1950
400
500
800
1200
A
IFSM
tbd
1.6
8.5
16.5
33
50
125
200
4.2
8.5
19
19
25
65
100
150
51
83
115
170
0.25
0.2
2
4
8
8
12
33
55
82
140
24
40
60
100
Reverse
Recovery IRM
A
tbd
2
10
20
40
60
150
250
5
10
20
20
30
60
100
150
60
100
150
250
0.5
0.5
5
10
20
20
30
60
100
150
250
60
100
150
250
A
IF
tbd
20
100
200
400
600
1500
2500
150
350
750
750
1000
1800
2500
4000
2500
4000
3500
6000
10
10
100
200
400
400
600
1200
2000
3000
5000
1200
2000
3000
5000
A/us
di/dt
Status
34
Development
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Development
Development
Development
Development
© 2008 IXYS All rights reserved
tbd
150
150
150
150
150
150
150
75
75
75
75
75
65
100
150
75
75
125
125
50
30
35
35
35
35
35
60
60
60
60
35
35
35
35
ns
trr
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
DWHP4-12
DWHP10-12
DWHP14-12
DWHP16-12
DWHP23-12
DWHP56-12
DWHP69-12
DWHP150-12
DWHP200-12
DWHP6-16/18
DWHP15-16/18
DWHP25-16/18
DWHP55-16/18
DWHP68-16/18
DWHP150-16/18
DWHP200-16/18
DWHP205-40/45
• - Available on request
• solder temperature below 350 °C
•
•
•
•
•
•
•
•
•
•
DWHP0.5-06
DWHP4-06
DWHP10-06
DWHP14-06
DWHP16-06
DWHP23-06
DWHP56-06
DWHP69-06
DWHP150-06
DWHP200-06
Type
solderable
14.3
2.4
3.25
4.45
8.65
8.91
11.4
12.4
3.6
2.95
4.8
3.95
5.5
8.65
8.91
11.4
12.4
1
3.6
2.95
4.8
3.95
5.5
8.65
8.91
11.4
12.4
mm
14.3
2.4
3.25
4.45
4.95
7.22
9.4
12.4
1.8
2.95
3.3
3.95
3.5
4.95
7.22
9.4
12.4
1
1.8
2.95
3.3
3.95
3.5
4.95
7.22
9.4
12.4
mm
Dimensions
A
B
45
1841
988
517
231
152
88
59
1622
1204
657
668
532
231
152
88
59
10777
1622
1204
657
668
532
231
152
88
59
Number
of Chips
per Wafer
0.58
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
mm
Si
thickness
SONIC diodes with glass passivation
bondable
© 2008 IXYS All rights reserved
35
180
250
300
DWGS04-018A
DWGS04-018C
DWGS10-018A
DWGS10-018C
DWGS20-018A
DWGS20-018C
DWGS04-025A
DWGS04-025C
DWGS10-025A
DWGS10-025C
DWGS20-025A
DWGS20-025C
DWGS04-03A
DWGS04-03C
DWGS10-03A
DWGS10-03C
DWGS20-03C
175
°C
V
100
TVJM
VRRM
DWGS04-01A
DWGS10-01C
Type
3.5
6.0
8.0
17.5
25.0
3.9
7.8
9.0
14.0
13.0
20.0
5.0
8.4
11.0
15.0
17.0
23.0
8.5
25.0
IF(AV)M
rect. d=0.5
TC=90°C
A
GaAs Schottky Diodes
10.12
10.12
5.20
5.20
3.70
10.12
10.12
5.20
5.20
3.70
3.70
10.12
10.12
5.20
5.20
3.70
3.70
10.12
5.20
typ.
K/W
RthJC
1.60
1.51
1.60
1.56
1.56
1.30
1.26
1.25
1.26
1.25
1.24
0.86
1.25
0.80
1.21
0.80
1.24
0.62
0.99
1.60
1.10
1.60
1.11
1.14
1.30
1.05
1.25
1.07
1.25
1.10
0.85
1.02
0.80
1.04
0.80
1.07
0.54
0.94
VF typ
TVJ =
25°C
125°C
V
V
2.0
4.0
5.0
7.5
20.0
2.0
4.0
5.0
7.5
7.5
20.0
2.0
4.0
5.0
7.5
7.5
20.0
2.0
10.0
A
@IF
700
< 10
1300
10
15
700
< 10
1300
< 10
2000
< 10
700
< 10
1300
< 10
2000
< 10
700
< 10
IR typ
@VRRM
125°C
µA
3.7
3.7
9.0
9.0
14.0
6.4
6.4
18.0
18.0
26.0
26.0
8.8
8.8
22.0
22.0
33.0
33.0
19.0
19.0
Cj
0.5 • VRRM
125°C
pF
© 2008 IXYS All rights reserved
12.5
32.0
30.0
80.0
120.0
12.5
32.0
30.0
80.0
50.0
120.0
12.5
32.0
30.0
80.0
50.0
120.0
12.5
80.0
A
IFSM
36
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
DWGS04-01A
DWGS10-01C
DWGS04-018A
DWGS04-018C
DWGS10-018A
DWGS10-018C
DWGS20-018A
DWGS20-018C
DWGS04-025A
DWGS04-025C
DWGS10-025A
DWGS10-025C
DWGS20-025A
DWGS20-025C
DWGS04-03A
DWGS04-03C
DWGS10-03A
DWGS10-03C
DWGS20-03C
Tolerance
•
•
Type
4060
4060
2126
2126
1480
4060
4060
2126
2126
1480
1480
4060
4060
2126
2126
1480
1480
4060
2126
Chips
per
Wafer
GaAs Schottky Diodes
bondable
-0 .1
1.30
1.30
2.10
2.10
3.00
1.30
1.30
2.10
2.10
3.00
3.00
1.30
1.30
2.10
2.10
3.00
3.00
1.30
2.10
A
mm
-0.1
1.30
1.30
1.60
1.60
1.60
1.30
1.30
1.60
1.60
1.60
1.60
1.30
1.30
1.60
1.60
1.60
1.60
1.30
1.60
B
mm
Dimensions
±10 %
0.45
mm
Wafer
thickness
© 2008 IXYS All rights reserved
37
SiN
Passivation
15
30
45
DWS9-15B
DWS19-15B
DWS29-15B
DWS7-30B
DWS17-30B
DWS217-30B
DWS27-30B
DWS37-30B
DWS93-45B
DWS94-45A
DWS3-45B
DWS4-45A
DWS13-45B
DWS14-45A
DWS213-45B
DWS214-45A
DWS23-45B
DWS24-45A
DWS33-45B
DWS34-45A
① Mounted on DCB
8
V
VRRM
DWS39-08D
Type
IR
35
1.8
40
2.5
100
5
140
7
200
10
250
10
40
80
140
150
250
100
200
350
1250
mA
VRRM
Schottky Diodes
100
125
100
125
100
125
100
125
100
125
100
125
100
100
100
100
100
100
100
100
100
°C
@ TVJ
150
175
150
175
150
175
150
175
150
175
150
175
150
150
150
150
150
150
150
150
150
°C
TVJM
tbd
tbd
28
32
42
47
tbd
tbd
63
68
89
95
tbd
tbd
65
82
102
tbd
65
98
145
tbd
tbd
1.7
1.7
1.4
1.4
1.2
1.2
1.1
1.1
0.8
0.8
1.7
1.4
1.2
1.1
0.8
1.7
1.4
1.1
0.8
K/W
typ.
rect. d = 0,5
TC = 125 °C
A
RthJC ①
IFAVM
0.48
0.66
0.48
0.66
0.48
0.66
0.48
0.66
0.48
0.66
0.48
0.66
0.43
0.43
0.43
0.43
0.43
0.39
0.39
0.39
0.31
V
25 °C
0.43
0.54
0.43
0.53
0.43
0.53
0.43
0.54
0.43
0.54
0.43
0.54
0.34
0.34
0.34
0.34
0.34
0.27
0.27
0.27
0.21
V
TVJ=125 °C
VF
7
7
10
10
20
20
28
28
40
40
60
60
10
20
28
40
60
10
20
40
60
A
@ IF
tbd
tbd
160
140
320
280
tbd
tbd
640
550
900
800
140
330
420
520
800
160
350
660
1000
A
tbd
tbd
tbd
tbd
1.4
1.5
tbd
tbd
2
2
2.6
2.5
tbd
2.4
5.5
tbd
tbd
tbd
tbd
tbd
tbd
A
IRM
typ.
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
ns
trr
typ.
7
7
10
10
20
20
28
28
40
40
50
50
10
20
28
40
50
10
20
40
50
A
@ IF
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
A/us
-di/dt
Reverse Recovery @ 25 °C
© 2008 IXYS All rights reserved
IFSM
38
•
•
•
•
•
•
•
•
•
•
•
•
DWS93-45B
DWS94-45A
DWS3-45B
DWS4-45A
DWS13-45B
DWS14-45A
DWS213-45B
DWS214-45A
DWS23-45B
DWS24-45A
DWS33-45B
DWS34-45A
Tolerance
•
•
•
•
•
•
•
DWS7-30B
DWS17-30B
DWS217-30B
DWS27-30B
DWS37-30B
•
•
•
•
•
DWS9-15B
DWS19-15B
DWS29-15B
DWS39-08D
Type
solderable
4180
4180
2783
2783
1502
1502
1000
1000
758
758
513
513
2783
1502
1000
758
513
2783
1502
758
513
6"
Chips
per Wafer
Schottky Diodes
bondable
2
2
2.4
2.4
3.25
3.25
4.45
4.45
4.44
4.44
5.41
5.41
-0.1
2.4
3.25
4.45
4.44
5.41
2.4
3.25
4.44
5.41
mm
2
2
2.4
2.4
3.25
3.25
3.25
3.25
4.44
4.44
5.41
5.41
-0.1
2.4
3.25
3.25
4.44
5.41
2.4
3.25
4.44
5.41
mm
Dimensions
A
B
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5%
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
mm
Si
thickness
© 2008 IXYS All rights reserved
39
150
180
200
DWS91-150A
DWS1-150A
DWS11-150A
DWS211-150A
DWS21-150A
DWS31-150A
DWS1-180A
DWS1-200A
DWS20-200A
DWS30-200A
① Mounted on DCB
100
80
DWS25-80B
DWS36-80A
DWS92-100A
DWS2-100A
DWS12-100A
DWS212-100A
DWS22-100A
DWS32-100A
60
V
VRRM
DWS95-60B
DWS96-60A
DWS5-60B
DWS6-60A
DWS15-60B
DWS16-60A
DWS25-60B
DWS26-60A
DWS35-60B
Type
IR
2.5
10
5
2.5
1.8
2.5
5
7
10
20
1.8
2.5
5
7
10
20
150
10
35
1.8
40
2.5
50
5
100
10
200
mA
VRRM
Schottky Diodes
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
100
125
100
125
100
125
100
125
100
125
100
°C
@ TVJ
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
175
150
175
150
175
150
175
150
175
150
175
150
°C
TVJM
tbd
tbd
tbd
30
tbd
30
43
tbd
60
85
tbd
32
45
tbd
65
92
66
91
tbd
tbd
tbd
tbd
43
tbd
63
tbd
82
1.7
1.1
0.8
1.7
tbd
1.7
1.4
1.2
1.1
0.8
tbd
1.7
1.4
1.2
1.1
0.8
1.1
0.8
tbd
tbd
1.7
1.7
1.4
1.4
1.1
1.1
0.8
K/W
typ.
A
RthJC ①
IFAVM
rect. d = 0,5
TC = 125 °C
0.84
0.84
0.84
0.82
0.81
0.81
0.81
0.81
0.81
0.81
0.8
0.82
0.82
0.8
0.82
0.82
0.7
0.78
0.59
0.71
0.59
0.71
0.59
0.71
0.59
0.71
0.59
V
25 °C
VF
0.68
0.68
0.68
0.67
0.66
0.66
0.66
0.66
0.66
0.66
0.63
0.63
0.63
0.63
0.63
0.63
0.58
0.61
0.52
0.59
0.52
0.61
0.52
0.59
0.52
0.59
0.49
V
TVJ=125 °C
10
40
60
10
7
10
20
28
40
60
7
10
20
28
40
60
40
60
7
7
10
10
20
20
40
40
60
A
@ IF
120
tbd
700
120
tbd
120
200
tbd
450
700
tbd
120
230
tbd
450
700
660
700
tbd
tbd
170
170
320
tbd
660
tbd
900
A
A
tbd
tbd
5
3.5
tbd
3
4
tbd
tbd
4.5
tbd
2
2.3
tbd
2.6
3.4
1.5
2
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
2.5
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
ns
trr
typ.
10
40
50
10
7
10
20
28
40
50
7
10
20
28
40
50
40
50
7
7
10
10
20
20
40
40
50
A
@ IF
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
A/us
-di/dt
Reverse Recovery @ 25 °C
IRM
typ.
© 2008 IXYS All rights reserved
IFSM
40
•
•
•
•
DWS1-180A
DWS1-200A
DWS20-200A
DWS30-200A
Tolerance
•
•
•
•
•
•
•
•
•
•
•
•
DWS92-100A
DWS2-100A
DWS12-100A
DWS212-100A
DWS22-100A
DWS32-100A
•
•
•
DWS25-80B
DWS36-80A
DWS91-150A
DWS1-150A
DWS11-150A
DWS211-150A
DWS21-150A
DWS31-150A
•
•
•
•
•
•
•
•
•
DWS95-60B
DWS96-60A
DWS5-60B
DWS6-60A
DWS15-60B
DWS16-60A
DWS25-60B
DWS26-60A
DWS35-60B
Type
solderable
2783
758
513
2783
4180
2783
1502
1000
758
513
4180
2783
1502
1000
758
513
758
513
4180
4180
2783
2783
1502
1502
758
758
513
Chips
per Wafer
Schottky Diodes
bondable
-0.1
2.4
4.44
5.41
2.4
2
2.4
3.25
4.45
4.44
5.41
2
2.4
3.25
4.45
4.44
5.41
4.44
5.41
2
2
2.4
2.4
3.25
3.25
4.44
4.44
5.41
mm
-0.1
2.4
4.44
5.41
2.4
2
2.4
3.25
3.25
4.44
5.41
2
2.4
3.25
3.25
4.44
5.41
4.44
5.41
2
2
2.4
2.4
3.25
3.25
4.44
4.44
5.41
mm
Dimensions
A
B
5%
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
mm
Si
thickness
© 2008 IXYS All rights reserved
41
1200 1800
1600 2200
CWP41
CWP50
CWP55
CWP71
CWP130
CWP180
CWP341
CWP347
CWP69
CWP339
CWP345
① = 75°C
② Mounted on DCB
1200 1600
CWP16-CG
CWP21-CG
CWP22-CG
CWP24
CWP25-CG
20
40
60
20
20
20
20
30
40
40
60
8
12
12
20
20
5
4
4
20
mA
V
800 1200
IR
VRRM
TVJM
VDRM
VRRM
CWP7-CG
CWP8
CWP8-CG
CWP35
Type
150
125
150
150
150
°C
TVJM
tbd
tbd
520
125
tbd
tbd
tbd
204
372
tbd
540
0.2
0.2
0.1
0.5
0.6
0.5
0.4
0.2
0.2
0.2
0.1
1.2
1.1
0.9
0.9
0.9
1.7
1.7
1.7
0.7
15 ①
tbd
tbd
tbd
25
61
36
tbd
tbd
K/W
max.
RthJC ②
A
IF(AV)M
rect. d=0.5
TC=100°C
Phase Control Thyristors
1.52
1.24
1.31
1.50
1.35
1.26
1.31
1.19
1.20
1.19
1.15
1.37
1.53
1.53
1.30
1.24
1.52
1.50
1.50
1.43
1.48
1.20
1.27
1.46
1.31
1.22
1.27
1.15
1.16
1.15
1.11
1.33
1.49
1.49
1.26
1.20
1.48
1.46
1.46
1.39
300
300
600
200
200
200
300
350
450
600
600
45
80
80
60
60
20
44
44
150
VT
TVJ =
@IF
25°C 150°C
typ.
V
V
A
1700
6000
8000
1150
1500
1600
2400
4750
5200
7000
9500
400
520
520
600
600
200
300
300
1050
A
ITSM
non-rep.
tP=10ms
185
150
200
150
150
150
185
150
150
200
200
150
150
150
60
60
tbd
60
60
100
tq
VR = 100V, VD = VDRM
tP=200µs, di/dt = -10A/µs
TVJ = TVJM
µs
20
20
50
20
20
20
20
20
20
50
50
10
20
15
20
20
tbd
20
20
10
V/µs
150
160
300
120
150
150
150
160
300
300
300
11
15
20
25
25
tbd
16
16
50
A
@IT
150
150
150
200
200
200
200
200
200
200
150
100
100
100
100
100
50
40
80
80
IH
RGK =∝
VD = 6V
TVJ = 25°C
mA
200
200
200
450
450
450
450
300
300
200
200
150
150
450
200
200
75
100
100
100
TVJ =
25°C
mA
IL
© 2008 IXYS All rights reserved
dv/dt
42
30
30
30
10
10
10
10
30
30
30
30
10
10
10
10
10
10
10
10
10
µs
@t P
Tolerance
CWP7-CG
CWP8
CWP8-CG
CWP35
CWP16-CG
CWP21-CG
CWP22-CG
CWP24
CWP25-CG
CWP41
CWP50
CWP55
CWP71
CWP130
CWP180
CWP341
CWP347
CWP69
CWP339
CWP345
Type
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
solderable
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
518
375
375
125
239
196
196
196
196
94
74
58
50
29
20
16
13
50
16
13
Chips
per
Wafer
-0.1
-0.1
4.45
5.20
5.20
8.70
6.50
7.10
7.10
7.10
7.10
10.00
9.77
12.30
13.40
15.40
17.65
18.50
23.40
13.40
18.50
23.40
mm
mm
4.45
5.20
5.20
8.70
6.50
7.10
7.10
7.10
7.10
10.00
13.00
12.30
13.40
19.05
20.55
25.30
23.40
13.40
25.30
23.40
B
A
mm
F
-0.1
1.80
1.80
1.80
2.30
2.30
2.30
2.30
3.46
3.50
3.50
3.50
2.30
3.50
3.50
Phase Control Thyristors
bondable
+0.1
0.90
1.00
1.00
1.50
1.50
1.50
1.50
2.50
2.50
2.50
2.50
1.50
2.50
2.50
mm
G
-0.1
0.2
0.2
0.2
0.2
0.2
0.2
+0.1
1.0
1.0
1.5
1.5
1.5
1.5
+0.1
1.5
1.5
1.5
1.5
1.5
1.5
-
Corner Gate
J
L
M
mm
mm
mm
Dimensions
±5%
0.38
0.38
0.32
0.38
0.38
0.38
0.38
0.32
0.32
0.38
0.38
0.38
0.38
0.38
0.38
0.38
0.38
0.46
0.46
0.46
mm
Sithickn.
© 2008 IXYS All rights reserved
...-CG types
43
5
1600-1800
DWFP68-16/18
Tolerance
DWFP17-13/18
DWFP68-16/18
DWFN2-16/18
DWFN9-16/18
DWFN17-16/18
DWFN21-16/18
DWFN35-16/18
Type
•
•
•
•
•
•
•
•
•
518
152
1205
685
518
346
260
Chips
per
Wafer
5
1300-1800
DWFP17-13/18
solderable
① Mounted on DCB
② @125 °C VR = 100V
2
4
5
8
10
IR
0.8xVRRM
TVJM
typ. mA
1600 1800
V
VRRM
DWFN2-16/18
DWFN9-16/18
DWFN17-16/18
DWFN21-16/18
DWFN35-16/18
Type
Fast Rectifier Diodes
bondable
-0.1
4.45
8.91
2.95
3.90
4.45
5.40
6.20
A
mm
-0.1
4.45
7.22
2.95
3.90
4.45
5.40
6.20
B
mm
±5%
0.265
0.265
0.265
0.265
0.265
0.265
0.265
mm
Si
thickness
48
17
10
16
17
23
26
IF(AV)M
rect. d=0.5
TC=75°C
A
Dimensions
125
125
125
°C
TVJM
0.4
1.3
2.9
1.6
1.3
0.9
0.7
typ.
K/W
RthJC ①
tbd
2.10
1.79
1.98
1.89
1.98
1.88
tbd
tbd
tbd
tbd
tbd
tbd
tbd
VF
TVJ =
25°C
125°C
V
V
70
55
10
30
55
70
80
A
@IF
500
300
75
160
300
400
500
A
IFSM
DWFN
45②
tbd
tbd
tbd
tbd
tbd
tbd
IRM
25°C
A
70
tbd
tbd
tbd
tbd
tbd
tbd
tbd
1.5
1.5
1.5
1.5
1.5
1.5
DWFP
tbd
10
4
8
10
15
25
A
@IF
© 2008 IXYS All rights reserved
250
tbd
tbd
tbd
tbd
tbd
tbd
Reverse Recovery
@IF
@-di/dt
trr
typ.
A
A/µs
µs
tbd
10
5
5
10
15
25
A/µs
44
@-di/dt
What is DCB
DCB stands for Direct Copper Bonding and denotes a process in which
copper and a ceramic material are
fused together, at high temperatures.
IXYS has developed this particular
process in which two layers of copper
are directly bonded to an aluminumoxide or aluminum-nitride ceramic
base. Since 1981 our power modules
have been designed with DCB
substrates. The DCB process yields a
thin base and eliminates the need for
thick, heavy copper bases that were
used in the past. Because modules
with DCB bases use fewer layers, they
have much lower thermal resistance
values and much better power cycling
capabilities.
Our power technology allows us to
produce DCB ceramic plates in large
quantities. The dimensions of our
standard sheet are 138 x 190.5 mm,
(or 5,5“ x 7,5“).
Properties of DCB ceramic
substrates:
• High mechanical strength and
mechanically stability
• Good adhesion and corrosion
resistance
• Excellent electrical insulation tested
to 2.5 kV(RMS) for 1 minute or more
• Excellent thermal conductivity
• Superb thermal cycling stability
• Matched thermal expansion
coefficient to that of silicon and GaAs
• Good heat spreading
• May be etched just like PC boards
• Environmentally friendly
Advantages for the users:
• The 0.3 mm thick copper layer
permits the copper pattern to handle
high currents.
• The excellent thermal conductivity
allows the possibility to place power
semiconductor chips in very close
proximity. This results in more power
per unit of volume and improved
reliability of a power system.
• Lighter base plate material than
copper base plate.
• High voltage insulation at higher
temperature.
• DCB is the basis for the „chip-onboard“ technology which is the
packaging trend for the next
generation integrated power
modules.
• IXYS experience in using DCB in
power modules. Wealth of
application know-how and support.
Both sides of the finished
DCB ceramic substrate are
copper. Standard dimensions
are 138 x 190.5 mm (usable
area is 130 x 180 mm).
A finished DCB part is
typically nickel plated.
Starting materials for DCB ceramic
substrates are 0.3 mm thick copper foils,
shown on both sides, top and bottom of the
ceramic base plate.
IXYS reserves the right to change limits, test conditions and dimensions
45
DCB Data
Unclad aluminum oxide ceramic
> 96
Al2O3 content
dimensions
usable area
max.
%
138 x 190.5, 138 x 210, 115 x 165*
mm
130 x 180, 107 x 156*
mm
thickness
1.00, 0.63, 0.38, 0.25
mm
arc through voltage
10
> 24
kV
0.3 ±0.015 (< 0.3 on request)
mm
thermal conductivity
W/m . K
Conduction layers - both sides
copper thickness
conductor width
min.
0.3 ± 0.2
mm
conductor spacing
min.
0.4 ± 0.2
mm
spacing conductor/edge of ceramic
min.
0.35 ± 0.2
mm
surface finishes available
peel-off resistance (DIN 532282)
bare copper; nickel plated;
nickel + gold plated
min.
9
N/mm
-55...+850
°C
DCB ceramic substrate
application temperature range
resistant to hydrogen
max. up to
400
°C
thermal expansion coefficient
typical
7.4 x 10-6
K-1
dimensions according
to customer specific drawing
DCB parts are available as:
•
•
•
•
bonded plate
bonded and patterned plate
prelasered, unbroken plate
individuale substrates
ALN - DCB on request
* = (for 0.25 mm thk.)
US Patent # 6,798,060 "power device and direct aluminum bonded substrate“.
46
© 2008 IXYS All rights reserved