Data Sheet

IXGN 200N60A2
IGBT
Optimized for Switching
up to 5 kHz
Preliminary Data Sheet
Symbol
= 600 V
= 200 A
= 1.35 V
E
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
Transient
±30
V
IC25
TC = 25°C
200
A
IC110
TC = 110°C
100
A
ICM
TC = 25°C, 1 ms
400
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 2.0 Ω
Clamped inductive load
ICM = 200
@ 0.8 VCES
A
PC
TC = 25°C
700
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
2500
3000
V~
V~
TJ
VISOL
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
Symbol
Test Conditions
VGE(th)
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC110, VGE = 15 V
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 1 mA, VCE = VGE
2.5
TJ = 25°C
TJ = 125°C
1.2
SOT-227B, miniBLOC
Ec
V
VGEM
© 2003 IXYS All rights reserved
VCES
IC25
VCE(sat)
5.5
V
50
2
µA
mA
±400
nA
1.35
V
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z
International standard package
miniBLOC
z
Aluminium nitride isolation
- high power dissipation
z
Isolation voltage 3000 V~
z
Very high current IGBT
z
Low VCE(sat) for minimum on-state
conduction losses
z
MOS Gate turn-on
- drive simplicity
z
Low collector-to-case capacitance
(< 50 pF)
z
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switch-mode and resonant-mode
power supplies
Advantages
z
Easy to mount with 2 screws
z
Space savings
z
High power density
DS99087A(11/03)
IXGN 200N60A2
Symbol
Test Conditions
gfs
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
= 60 A; VCE = 10 V,
70
106
S
9900
pF
740
pF
190
pF
480
nC
63
nC
169
nC
60
ns
45
ns
360
ns
250
ns
Eoff
5
mJ
td(on)
60
ns
tri
60
ns
3.0
mJ
290
ns
SOT-227B miniBLOC
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
Inductive load, TJ = 25°°C
td(off)
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.0 Ω
tfi
Eon
td(off)
tfi
Inductive load, TJ = 125°°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4 Ω
Eoff
660
ns
12
mJ
0.17 K/W
RthJC
0.05
RthCK
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXGN 200N60A2
Fig. 1. Output Characte ristics
@ 25 Deg. C
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
350
200
VGE = 15V
13V
11V
175
300
150
125
100
75
200
7V
150
100
50
25
50
5V
0
5V
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
0
0.5
1
V C E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
2
2.5
3
V C E - Volts
3.5
4
1.4
VGE = 15V
13V
11V
9V
150
1.3
7V
V C E (sat)- Normalized
175
I C - Amperes
1.5
Fig. 4. De pende nce of V CE(sat) on
Tem perature
200
125
100
75
50
5V
1.1
1.0
0.8
0
0.6
0.75
1
1.25
1.5
1.75
2
I C = 100A
0.9
0.7
0.5
I C = 200A
V GE = 15V
1.2
25
0.25
2.25
I C = 50A
-50
-25
V CE - Volts
0
25
50
75
100
125
150
7.5
8
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em iiter Voltage
Fig. 6. Input Adm ittance
3.0
350
TJ = 25ºC
2.8
300
2.6
2.2
2.0
1.8
I C = 200A
1.6
1.4
100A
1.2
I C - Amperes
250
2.4
VC E - Volts
9V
250
7V
I C - Amperes
I C - Amperes
VGE = 15V
13V
11V
9V
200
150
TJ = 125ºC
25ºC
-40ºC
100
50
50A
1.0
0
5
6
7
8
9
10 11 12
V G E - Volts
© 2003 IXYS All rights reserved
13 14 15 16 17
4
4.5
5
5.5
6
6.5
V G E - Volts
7
IXGN 200N60A2
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
200
35
180
30
TJ = -40ºC
25ºC
125ºC
140
E off - milliJoules
g f s - Siemens
160
120
100
80
60
I C = 200A
25
TJ = 125ºC
VGE = 15V
VCE = 480V
20
15
I C = 100A
10
40
5
20
0
I C = 50A
0
0
50
100
150
200
250
300
350
0
5
10
I C - Amperes
20
25
Fig. 10. Dependence of Eoff on
Tem perature
Fig. 9. Dependence of Eoff on Ic
30
30
R G = 2.4 Ω
VGE = 15V
VCE = 480V
R G = 2.4 Ω
VGE = 15V
VCE = 480V
25
E off - milliJoules
25
E off - MilliJoules
15
R G - Ohms
20
TJ = 125ºC
15
10
I C = 200A
20
15
I C = 100A
10
TJ = 25ºC
5
5
0
0
I C = 50A
50
75
100
125
150
175
200
25
35
45
I C - Amperes
65
75
85
95
105 115 125
Fig. 12. Capacitance
Fig. 11. Gate Charge
100000
15
f = 1 MHz
Capacitance - p F
VCE = 300V
I C = 100A
I G = 10mA
12
VG E - Volts
55
TJ - Degrees Centigrade
9
6
C ies
10000
1000
C oes
3
C res
0
100
0
50
100 150 200 250 300 350 400 450 500
Q G - nanoCoulombs
0
5
10
15
20
25
V C E - Volts
30
35
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
40
IXGN 200N60A2
Fig. 1 3 . M a x im um Tra ns ie nt The r m a l Re s is ta nc e
0 . 18
0 . 16
R (th) J C - (ºC/W)
0 . 14
0 . 12
0. 1
0 . 08
0 . 06
0 . 04
0 . 02
0
1
© 2003 IXYS All rights reserved
10
Puls e W idth - millis ec onds
10 0
10 0 0