MIXA20WB1200TED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM =1600 V VCES = 1200 V VCES =1200 V IDAVM = 105 A IC25 = 17 A IC25 = 28 A IFSM = 320 A VCE(sat)= 1.8 V VCE(sat)= 1.8 V Part name (Marking on product) MIXA20WB1200TED 21 D11 D13 22 D15 D7 T1 2 3 D12 D14 D16 T7 11 T3 D3 20 D2 D5 12 NTC 8 5 6 T2 T5 19 17 15 14 18 16 7 1 D1 T4 D4 4 13 D6 T6 9 E 72873 10 23 Pin configuration see outlines. 24 Features: Application: Package: •Easy paralleling due to the positive temperature coefficient of the on-state voltage •Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI •Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) •SONIC™ diode - fast and soft reverse recovery - low operating forward voltage •AC motor drives •Solar inverter •Medical equipment •Uninterruptible power supply •Air-conditioning systems •Welding equipment •Switched-mode and resonant-mode power supplies •"E2-Pack" standard outline •Insulated copper base plate •Soldering pins for PCB mounting •Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916e 1-8 MIXA20WB1200TED Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 28 20 A A TC = 25°C 100 W collector emitter saturation voltage IC = 16 A; VGE = 15 V TVJ= 25°C TVJ=125°C 1.8 2.1 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ= 25°C 6.0 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C 0.02 0.2 1.5 mA mA IGES gate emitter leakage current VGE = ±20 V 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 56 W RBSOA reverse bias safe operating area VGE = ±15 V; RG = 56 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 56 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ= 25°C 5.4 TVJ=125°C 47 nC 70 40 250 100 1.55 1.7 ns ns ns ns mJ mJ TVJ=125°C VCEK = 1200 V TVJ = 125°C 45 A 10 µs A 1.26 K/W 60 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/µs IF = 20 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ= 25°C 1200 V TC = 25°C TC = 80°C 33 22 A A IF = 20 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.95 2.2 V V TVJ=125°C 3 20 350 0.7 µC A ns mJ 1.5 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916e 2-8 MIXA20WB1200TED Brake T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 17 12 A A TC = 25°C 60 W collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 10 A QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 100 W RBSOA reverse bias safe operating area VGE = ±15 V; RG = 100 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 100 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) typ. TVJ= 25°C 1.8 2.1 5.4 6.0 6.5 V 0.1 mA mA 500 nA 0.1 TVJ=125°C 28 nC 70 40 250 100 1.1 1.1 ns ns ns ns mJ mJ TVJ=125°C VCEK = 1200 V TVJ = 125°C 30 A 10 µs A 2.0 K/W Ratings typ. max. Unit 40 Brake Chopper D7 Symbol Definitions Conditions min. VRRM max. repetitive reverse voltage TVJ= 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 12 8 A A VF forward voltage IF = 5 A; VGE = 0 V TVJ= 25°C TVJ=125°C 1.95 1.95 2.2 V V IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.5 0.5 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = 200 A/µs IF = 5 A; VGE = 0 V 0.6 6 350 0.2 µC A ns mJ RthJC thermal resistance junction to case (per diode) TVJ=125°C 3.4 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916e 3-8 MIXA20WB1200TED Input Rectifier Bridge D11 - D16 TVJ= 25°C Ratings typ. max. 1600 Unit V sine 180° rect.; d = 1/3 TC = 80°C TC = 80°C 37 105 A A max. forward surge current t = 10 ms; sine 50 Hz TVJ= 25°C TVJ=125°C 320 280 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ= 25°C TVJ=125°C 510 390 A2s A2s Ptot total power dissipation TC = 25°C 110 W VF forward voltage IF = 50 A TVJ= 25°C TVJ=125°C 1.34 1.34 1.7 V V IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.02 0.2 mA mA RthJC thermal resistance junction to case (per diode) 1.1 K/W resistance Conditions min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K Definitions Conditions min. -40 Ratings typ. max. 125 150 125 Unit °C °C °C 2500 V~ Symbol VRRM Definitions max. repetitive reverse voltage Conditions IFAV IDAVM average forward current max. average DC output current IFSM min. Temperature Sensor NTC Symbol R25 B25/50 Definitions TC = 25°C Module Symbol TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index -40 IISOL < 1 mA; 50/60 Hz - Md mounting torque (M5) 3 dS dA creep distance on surface strike distance through air 6 6 Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink with heatsink compound Weight 6 Nm mm mm 5 mW 0.02 K/W 180 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 R0 Ratings typ. max. 0.88 9 Unit V mW TVJ=150°C 1.1 86 V mW D1 - D6 TVJ=150°C 1.2 40 V mW IGBT T7 TVJ=150°C 1.1 153 V mW free wheeling diode D7 TVJ=150°C 1.15 170 V mW Definitions rectifier diode Conditions D8 - D13 min. TVJ=150°C V0 R0 IGBT T1 - T6 V0 R0 free wheeling diode V0 R0 V0 R0 TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916e 4-8 MIXA20WB1200TED Circuit Diagram 21 D11 D13 22 D15 D7 T1 D12 2 3 D14 D16 T7 11 T3 D3 20 D2 D5 12 NTC 8 5 6 T2 T5 19 17 15 14 18 16 7 1 D1 T4 D4 4 13 D6 T6 9 10 23 24 Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Part number 2D Data Matrix: FOSS-ID 6 digits Batch # 6 digits M = Module I = IGBT A = MPT X = Parallel Legs 20 = Current Rating [A] WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit 1200 = Reverse Voltage [V] T = NTC ED = E2-Pack XXXXXXXXXX yywwx Logo UL Part name Date Code Location Ordering Part Name Marking on Product Standard MIXA20WB1200 TED MIXA20WB1200TED IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 6 507 490 20110916e 5-8 MIXA20WB1200TED Inverter T1 - T6 30 IC [A] 30 VGE = 15 V 25 25 20 20 TVJ = 25°C 15 IC TVJ = 125°C 11 V TVJ = 125°C 15 [A] 10 9V 10 5 0 13 V VGE = 15 V 17 V 19 V 5 0 1 2 0 3 VCE [V] 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC [A] VGE 15 10 [V] 10 0 5 TVJ = 125°C 5 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 10 20 Eon 2.4 Eoff E [mJ] [mJ] 1 5 10 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 140 160 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.6 0 60 2.8 RG = 56 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 2 0 50 Fig. 4 Typ. turn-on gate charge 4 E 40 QG [nC] VGE [V] Fig. 3 Typ. tranfer characteristics 3 30 1.2 40 Eoff Eon 60 80 100 120 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20110916e 6-8 MIXA20WB1200TED Inverter D1 - D6 40 5 TVJ = 125°C VR = 600 V 30 4 40 A IF Qrr 20 [A] 3 20 A [µC] TVJ = 125°C 10 2 TVJ = 25°C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 Fig. 7 Typ. Forward current versus VF 300 400 500 diF /dt [A/µs] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125°C 30 20 A 25 TVJ = 125°C 600 VR = 600 V VR = 600 V 500 10 A IRR 20 [A] 15 [ns] 300 10 200 5 100 trr 0 200 300 400 500 diF /dt [A/µs] 600 400 40 A 20 A 10 A 0 200 700 Fig. 9 Typ. peak reverse current IRM vs. di/dt 300 400 500 diF /dt [A/µs] 600 700 Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125°C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] [K/W] 0.6 0.1 10 A 1 2 3 4 0.4 0.2 200 300 400 500 diF /dt [A/µs] 600 700 Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.01 0.001 0.01 IGBT ti Ri 0.252 0.0015 0.209 0.03 0.541 0.03 0.258 0.08 0.1 tp [s] FRD Ri ti 0.461 0.0015 0.291 0.03 0.423 0.03 0.326 0.08 1 10 Fig. 12 Typ. transient thermal impedance 20110916e 7-8 MIXA20WB1200TED Brake T7 & D7 20 10 VGE = 15 V 16 8 12 IC [A] [A] 8 TVJ = 125°C 4 0 6 IF TVJ = 25°C 4 TVJ = 125°C 2 0 1 2 TVJ = 25°C 0 0.0 3 0.5 1.0 VCE [V] 1.5 2.0 2.5 3.0 VF [V] Fig. 13 Typ. output characteristics Fig. 14 Typ. forward characteristics 10 100000 diode IGBT ZthJC 1 10000 R [Ω] [K/W] Inverter-IGBT 0.1 0.001 1 2 3 4 0.01 Ri 0.446 0.415 0.672 0.467 0.1 ti 0.002 0.03 0.03 0.08 1000 Inverter-FRD Ri 1.005 0.856 1.494 0.045 1 ti 0.002 0.03 0.03 0.08 10 100 10 0 25 50 75 100 125 150 tP [s] TC [°C] Fig. 15 Typ. transient thermal impedance Fig.16 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110916e 8-8