MCC 225 MCD 225 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 400A 2x 221A ITAVM = VRRM =1200-1800V 3 Type 7 6 2 MCC 225-12io1 MCC 225-14io1 MCC 225-16io1 MCC 225-18io1 MCD 225-12io1 MCD 225-14io1 MCD 225-16io1 MCD 225-18io1 5 4 1 E72873 Symbol Conditions Maximum Ratings ITRMS, IFRMS TVJ = TVJM ITAVM, IFAVM TC = 85°C; 180° sine ITSM, IFSM I2t (di/dt)cr 400 221 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 8000 8500 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 7000 7500 A A TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 320 000 300 000 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 245 000 246 000 A2s A2s 100 A/µs TVJ = TVJM; repetitive, IT = 750 A f = 50 Hz; tp = 200 µs; VD = 2/3 VDRM; IG = 1 A; diG /dt = 1 A/µs non repetitive, IT = ITAVM 500 A/µs 1000 V/µs 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+130 130 -40...+125 °C °C °C 3000 3600 V~ V~ 4.5 - 7 11 - 13 Nm Nm 750 g (dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM; RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM; tp = 30 µs IT = IT(AV)M; tp = 500 µs PGAV VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M6) Terminal connection torque (M8) Weight Typical including screws Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features • International standard package • Direct Copper Bonded Al2O3-ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins Applications • Motor control, softstarter • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Solid state switches Advantages • Simple mounting • Improved temperature and power cycling • Reduced protection circuits 20130813c 1-5 MCC 225 MCD 225 Symbol Conditions typ. max. IRRM, IDRM VR / VD = VRRM / VDRM TVJ = TVJM 40 mA VT, VF IT; IF = 600 A TVJ = 25°C 1.4 V VT0 rt For power-loss calculations only TVJ = TVJM 0.8 0.76 V mW VGT VD = 6 V VD = 6 V TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 220 V V mA mA VGD IGD VD = 2/3 VDRM; TVJ = TVJM 0.25 10 V mA IL tp = 30 µs; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/µs TVJ = 25°C 200 mA IH VD = 6 V; RGK = ∞; TVJ = 25°C 150 mA tgd VD = ½VDRM IG = 1 A; diG /dt = 1 A/µs TVJ = 25°C 2 µs tq VD = 2/3 VDRM dv/dt = 50 V/µs; -di/dt = 10 A/µs IT = 300 A; VR = 100 V; tp = 200 µs TVJ = TVJM QS IRM IT = 300 A; -di/dt = 50 A/µs TVJ = TVJM RthJC per thyristor; DC current per module per thyristor; DC current per module IGT RthJK dS dA a 10 Characteristic Values 200 Creeping distance on surface Creepage distance in air Maximum allowable acceleration µs 760 275 µC A 0.157 0.079 0.197 0.099 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 1: IGT, TVJ = 130°C 2: IGT, T4 = 25°C 3: IGT, TVJ = -40°C 6 VG 2 1 1 3 5 4 [V] 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 130°C 0.1 10-3 10-2 10-1 100 IG [A] 101 A IG 102 Fig. 1 Forward characteristics 100 TVJ = 25°C typ. tgd limit 10 [μs] 1 0.01 0.1 1 IG [A] Fig. 2 Gate trigger characteristics 900 800 700 600 I_T [A] IT 500 [A] 400 300 200 100 Fig. 3 Gate trigger delay time 0 0 0.5 1 1.5 2 V_T [V] VT [V] Fig. 2a Forward voltage drop IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130813c 2-5 MCC 225 MCD 225 Dimensions in mm (1 mm = 0.0394“) SW 13 M8 x 20 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 2.8 x 0.8 28.5 1 2 38 50 35 5 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130813c 3-5 MCC 225 MCD 225 8000 106 400 50 Hz 80 % VRRM TVJ = 45°C TVJ = 130°C 6000 300 TVJ = 45°C ITSM IFSM ITAVM IFAVM I2dt 4000 TVJ = 130°C 105 200 2 [A s] [A] [A] 2000 100 0 0.001 0.01 0.1 1 104 1 10 t [s] t [ms] 400 0 0 25 50 75 100 125 150 TC [°C] Fig. 4 I2dt versus time Fig. 3 Surge overload current ITSM/FSM: Crest value, t: duration Fig. 4a Max. forward current at case temperature RthKA K/W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 300 Ptot 200 DC 180° sin 120° 60° 30° [W] 100 0 DC 180° sin 120° 60° 30° 0 100 200 300 0 25 50 ITAM/FAM [A] 75 100 125 150 TA [°C] Fig. 5 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) 2000 RthKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 Ptot 1000 [W] Circuit B6 3xMCC225 3xMCD225 500 0 0 200 400 600 IdAM [A] 0 25 50 75 100 125 150 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130813c 4-5 MCC 225 MCD 225 2000 RthKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 Ptot 1000 [W] Circuit W3 3xMCC225 or 3xMCD225 500 0 0 100 200 300 400 0 25 50 IRMS [A] 75 100 125 150 TA [°C] Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.25 RthJC for various conduct. angles d: d DC 180° 120° 60° 30° 0.20 0.15 ZthJC 30° 60° 120° 180° DC 0.10 [K/W] 0.05 0.00 10-3 10-2 10-1 100 RthJC (K/W) 0.157 0.168 0.177 0.200 0.243 Constants for ZthJC calculation: 101 102 i 1 2 3 4 Rthi (K/W) 0.0076 0.0406 0.0944 0.0147 ti (s) 0.00054 0.098 0.54 12 t [s] Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) 0.30 RthJK for various conduct. angles d: d DC 180° 120° 60° 30° 0.25 0.20 ZthJK 0.15 [K/W] 30° 60° 120° 180° DC 0.10 0.05 0.00 10-3 10-2 10-1 100 101 Constants for ZthJK calculation: 102 t [s] Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved RthJK (K/W) 0.197 0.208 0.217 0.240 0.283 i 1 2 3 4 5 Rthi (K/W) 0.0076 0.0406 0.0944 0.0147 0.0400 ti (s) 0.00054 0.0980 0.540 1200 12 20130813c 5-5