MCMA140PD1600TB

MCMA140PD1600TB
Thyristor \ Diode Module
VRRM
= 2x 1600 V
I TAV
=
140 A
VT
=
1.28 V
Phase leg
Part number
MCMA140PD1600TB
Backside: isolated
3
1
5
4
2
Features / Advantages:
Applications:
Package: TO-240AA
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Isolation Voltage: 4800 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120802b
MCMA140PD1600TB
Ratings
Rectifier
Conditions
Symbol
V RSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
max.
1700
Unit
V
V RRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1600
V
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
VR/D = 1600 V
TVJ = 25°C
100
µA
VR/D = 1600 V
TVJ = 140°C
10
mA
I T = 150 A
TVJ = 25°C
1.29
V
1.63
V
1.28
V
I T = 300 A
TVJ = 125 °C
I T = 150 A
I T = 300 A
I TAV
average forward current
TC = 85°C
180° sine
I T(RMS)
RMS forward current
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
1.70
V
T VJ = 140 °C
140
A
220
A
TVJ = 140 °C
0.85
V
520
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
2.40
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2.59
kA
t = 10 ms; (50 Hz), sine
TVJ = 140 °C
2.04
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2.21
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
28.8 kA²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
27.9 kA²s
TVJ = 140 °C
20.8 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 140 °C
20.2 kA²s
119
t P = 300 µs
average gate power dissipation
critical rate of rise of current
K/W
0.20
junction capacitance
(di/dt) cr
mΩ
K/W
TC = 25°C
CJ
PGAV
2.8
0.22
TVJ = 140°C; f = 50 Hz
repetitive, IT = 450 A
pF
10
W
5
W
0.5
W
150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs;
I G = 0.45 A; VD = ⅔ VDRM
non-repet., IT = 150 A
500 A/µs
(dv/dt) cr
critical rate of rise of voltage
TVJ = 140°C
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C
TVJ = -40 °C
1.6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
150
mA
TVJ = -40 °C
200
mA
TVJ = 140 °C
0.2
V
10
mA
TVJ = 25 °C
200
mA
VD = ⅔ VDRM
1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = ⅔ VDRM
t p = 10 µs
1.5
V
IG = 0.45 A; di G /dt = 0.45 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
200
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG = 0.45 A; di G /dt = 0.45 A/µs
VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 140 °C
di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
185
µs
20 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20120802b
MCMA140PD1600TB
Package
Ratings
TO-240AA
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
200
Unit
A
-40
140
°C
-40
125
°C
125
°C
Weight
90
g
MD
mounting torque
2.5
4
Nm
MT
terminal torque
2.5
4
Nm
d Spp/App
d Spb/Apb
VISOL
terminal to terminal
13.0
terminal to backside
16.0
creepage distance on surface | striking distance through air
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
9.7
mm
16.0
mm
4800
V
4000
V
Part description
M
C
M
A
140
PD
1600
TB
Ordering
Standard
Ordering Number
MCMA140PD1600TB
Equivalent Circuits for Simulation
I
V0
R0
=
=
=
=
=
=
=
=
Marking on Product
MCMA140PD1600TB
* on die level
Module
Thyristor (SCR)
Thyristor
(up to 1800V)
Current Rating [A]
Phase leg
Reverse Voltage [V]
TO-240AA-1B
Delivery Mode
Box
Code No.
509348
T VJ = 140 °C
Thyristor
V 0 max
threshold voltage
0.85
V
R 0 max
slope resistance *
1.6
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Quantity
6
Data according to IEC 60747and per semiconductor unless otherwise specified
20120802b
MCMA140PD1600TB
Outlines TO-240AA
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
1
5
4
2
Data according to IEC 60747and per semiconductor unless otherwise specified
20120802b
MCMA140PD1600TB
Thyristor
105
2000
300
VR = 0 V
50 Hz, 80% VRRM
250
1600
200
IT
ITSM
TVJ = 45°C
2
It
TVJ = 45°C
TVJ = 140°C
104
150
[A]
TVJ = 125°C
100
[A]
2
[A s]
1200
140°C
TVJ = 140°C
50
TVJ = 25°C
0
0.5
103
800
1.0
1.5
2.0
0.01
0.1
VT [V]
1
1
t [s]
100
Fig. 3 I t versus time (1-10 s)
200
tp = 30 µs
tp = 500 µs
PGM = 120 W
60 W
8W
TVJ = 125°C
10.0
ITAVM120
tgd
[V]
lim.
[μs]
1.0
[A] 80
typ.
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
25°C
125°C
1
0.1
dc =
1
0.5
0.4
0.33
0.17
0.08
160
10 P =
GAV
IGD
4 5 6 7 8 910
t [ms]
100.0
0.1
0.01
3
2
Fig. 2 Surge overload current
ITSM: crest value, t: duration
Fig. 1 Forward characteristics
VG
2
1
40
0.1
0.01
10
0
0.10
1.00
10.00
0
40
IG [A]
IG [A]
Fig. 5 Gate controlled delay time tgd
Fig. 4 Gate voltage & gate current
80
120
160
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
0.24
250
dc =
1
0.5
0.4
0.33
0.17
0.08
200
Ptot
150
[W]
0.20
RthHA
0.1
0.2
0.4
0.6
0.8
1.0
0.16
ZthJC
0.12
[K/W]
100
i Rthi (K/W)
1
0.0073
2
0.0128
3
0.1329
4
0.067
0.08
50
0.04
ti (s)
0.0001
0.0031
0.084
0.42
0.00
0
0
40
80
120 160
IT(AV) [A]
0
40
80
120
160
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Tamb [°C]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20120802b