MTI 145WX100GD Three phase full Bridge VDSS =100V ID25 = 190A RDSon typ. = 1.7 mW with Trench MOSFETs in DCB-isolated high-current package Part number MTI145WX100GD L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G2 G4 G6 S2 S4 S6 L1- L2- L3+ L3 L3- Features / Advantages: Applications: Package: ISOPLUS-DIL® • MOSFETs in trench technology: −− low RDSon −− optimized intrinsic reverse diode • Package: −− high level of integration −− high current capability −− aux. terminals for MOSFET control −− terminals for soldering or welding connections −− isolated DCB ceramic base plate with optimized heat transfer • Space and weight savings AC drives • in automobiles −− electric power steering −− starter generator • in industrial vehicles −− propulsion drives −− fork lift drives • in battery supplied equipment • • • • IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved High level of integration RoHS compliant High current capability Aux. Terminals for MOSFET control • Terminals for soldering or welding connections • Space and weight savings 20150313b 1-7 MTI 145WX100GD MOSFETs Ratings Symbol Definitions Conditions min. VDSS drain source breakdown voltage VGS VGSM gate source voltage max. transient gate source voltage ID25 ID90 continuous drain current TC = 25°C TC = 90°C RDS(on) 1) static drain source on resistance on chip level at ID = 100 A; VGS = 10 V TVJ= 25°C TVJ=125°C VGS(th) gate threshold voltage ID = 275 µA; VDS = VGS TVJ= 25°C IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ= 25°C TVJ=125°C IGSS gate source leakage current VGS = ±20 V; VDS = 0 V RG gate resistance on chip level Ciss Coss Crss input capacitance output capacitance reverse transfer capacitance Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge td(on) tr td(off) tf turn-on delay time current rise time turn-off delay time current fall time Eon Eoff Erec(off) turn-on energy per pulse turn-off energy per pulse turn-off reverse recovery losses RthJC thermal resistance junction to case RthJH thermal resistance junction to heatsink typ. max. Unit 100 V ±15 ±20 V V 190 145 A A 1.7 2.9 2.2 mW mW 2.7 3.5 V 10 1 100 µA µA 500 nA TVJ = 25°C to 150°C 2.0 1.9 W VGS = 0 V; VDS = 50 V; f = 1 Mhz 11.1 1.94 70 nF nF pF VGS = 10 V; VDS = 50 V; ID = 100 A 155 48 27 nC nC nC 135 75 600 40 ns ns ns ns 200 600 36 µJ µJ µJ inductive load VGS = 10 V; VDS = 50 V ID = 100 A; RG = 27 W TVJ=125°C with heat transfer paste (IXYS test setup) 1) 1.1 0.85 K/W 1.4 K/W 180 105 A A 1.2 V VDS = ID·(RDS(on) + 2·RPin to Chip ) Source-Drain Diode IF25 IF90 forward current TC = 25°C TC = 90°C VSD source drain voltage IF = 100 A; VGS = 0 V TVJ= 25°C QRM IRM trr reverse recovery charge max. reverse recovery current reverse recovery time VR = 50 V; IF = 100 A RG = 27 W (di/dt = 1700 A/µs) TVJ=125°C IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 0.9 2 54 60 µC A ns 20150313b 2-7 MTI 145WX100GD Package ISOPLUS-DIL® Ratings Symbol Definitions Conditions min. IRMS RMS current per pin in main current paths (L1+...L3+, L1-...L3-, L1...L3) may be additionally limited by external connections (PCB tracks) 2 pins for output L1, L2, L3 Tstg storage temperature TVJM virtual junction temperature typ. max. Unit 75 A -55 125 °C -55 175 °C 250 N Weight 25 FC mounting force with clip VISOL isolation voltage t = 1 second Rpin-chip resistance terminal to chip VDS = ID·(RDS(on) + 2·Rpin to chip) CP coupling capacity between shorted pins and back side metallization 50 t = 1 minute 50/60 Hz, RMS, IISOL < 1 mA Assembly Line Date Code Type Number XXXXXXXXXXXX YYYYYY V 1000 V 0.5 mW 160 pF Part number DCB backside yywwC 1200 g M = Module T = Trench MOSFET I = OPTIMOS 145 = Current Rating [A] WX = 6-Pack with separated Phase Legs 100 = Reverse Voltage [V] GD = ISOPLUS-DIL Assembly Code Ordering Part Name Marking on Product Standard MTI145WX100GD-SMD MTI145WX100GD IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Blister 28 513435 20150313b 3-7 MTI 145WX100GD Outlines ISOPLUS-DIL® L1+ L2+ G1 G3 G5 S1 S3 S5 L1 G2 S2 G4 G6 S4 S6 L1- IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved L2 L2- L3+ L3 L3- 20150313b 4-7 MTI 145WX100GD 300 1,2 VDS = 25 V 1,1 200 TVJ = 125°C ID [A] VDSS norm. [V] IDSS = 1 mA 1,0 TVJ = 25°C 100 0,9 0,8 -50 0 50 100 0 2,0 150 2,5 3,0 TVJ [°C] 3,5 4,0 4,5 5,0 5,5 6,0 VGS [V] Fig. 2 Typ. transfer characteristics Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ 300 ID [A] 250 200 350 6V VGS= 5.5 V 100 0 0,0 0,2 0,4 200 150 TVJ = 125 °C 50 0,6 0,8 0 1,0 0,0 0,5 VDS [V] 5 VGS = 10 V ID = 100 A RDS(on) normalized RDS(on) 3 2 1 0,5 0 25 50 75 100 2,0 125 150 5V 3,0 4 1,0 0,0 -25 3,5 RDS(on) norm. 1,5 1,5 Fig. 4 Typ. output characteristics (125 °C) RDS(on) [m] RDS(on) norm. 2,0 1,0 VDS [V] Fig. 3 Typ. output characteristics (25 °C) 2,5 5.5 V 5V 100 TVJ = 25 °C 50 6.5 V 7V 10 V 15 V 20 V 250 5V 150 6V VGS= 300 6.5 V 7V 10 V 15 V 20 V ID [A] 350 0 175 2,5 TVJ = 125 °C 2,0 5.5 V 1,5 6V 6.5 V 1,0 0,5 15 V 20 V 0 100 200 7V 10 V 300 TVJ [°C] ID [A] Fig. 5 Drain source on-state resistance Fig. 6 Drain source on-state resistance versus ID versus junction temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 400 20150313b 5-7 MTI 145WX100GD 10 250 ID = 100 A TVJ = 25 °C 8 TVJ = 175 °C VDS = 20 V 200 ID [A] VGS [V] VDS = 50 V 6 150 4 100 2 50 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 80 100 120 140 160 180 QG [nC] TC [°C] Fig. 7 Typical turn on gate charge Fig. 8 Drain current ID vs. case temperature TC (chip capability) tr 150 Eon 120 80 0 40 1,0 VDS = 50 V VGS = 10/0 V 0,8 RG = 80 120 160 200 0 27 300 200 Eoff tf 0 500 400 TVJ = 125 °C 0,6 0,0 600 td(off) 40 80 120 160 200 100 0 ID [A] ID [A] Fig. 9 Typ. turn-on energy and switching times Fig. 10 Typ. turn-off energy and switching times versus drain current, inductive switching versus drain-current, inductive switching td(on) VDS = 50 V VGS = 0/10 V 0,9 0,8 = 100 A ID 0,7 TVJ = 125 °C 500 2,0 400 1,6 300 1,2 t [ns] 0,6 0,5 0,4 tr 0,3 0,1 700 0,2 Erec(off) 1,0 0,2 1,4 0,4 40 50 0 800 1,2 160 Eon 0,0 10 Erec(off) x10 20 30 40 50 60 70 80 90 100 200 Eoff [mJ] Eon [µJ] td(on) 200 100 Eon [mJ] 27 TVJ = 125 °C Eoff [mJ] RG = 250 200 t [ns] 300 1,6 td(off) VDS = 50 V VGS = 0/10 V ID 0,4 0 0,0 TVJ = 125 °C 1200 800 Eoff 400 tf 20 40 60 80 100 RG [] RG [] Fig. 11 Typ. turn-on energy and switching times Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching versus gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 2000 1600 = 100 A 0,8 100 t [ns] 240 VDS = 50 V VGS = 0/10 V t [ns] 350 0 20150313b 6-7 MTI 145WX100GD 50 270 IRM [A] 40 82 27 50 82 20 40 IRM 10 400 800 1200 1600 1,2 82 0,8 30 270 0 1,6 60 27 IF = 100A Vr = 50 V TVJ = 125 °C 2,0 70 tRM 30 0 80 27 QRM [µC] IF = 100 A VR = 50 V TVJ = 125 °C tRM [ns] 60 270 0,4 20 2000 0 400 800 1200 1600 diF/dt [A/µs] diF/dt [A/µs] Fig. 13 Reverse recovery time tRM of the body diode vs. diF/dt Fig. 14 Reverse recovery charge QRM of the body diode vs. diF/dt 2000 1,2 300 TVJ= -25 °C 25 °C 125 °C 150 °C IS [A] ZthJH [K/W] 200 1,0 100 0,8 0,6 0,4 0,2 0,5 0,6 0,7 0,8 0,9 1,0 VSD [V] Fig.15 Source current IS vs. source drain voltage VSD (body diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 0,0 0,001 0,01 0,1 1 10 tp [s] Fig. 16 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste (IXYS test setup) 20150313b 7-7