RENESAS HAT2036R

HAT2036R
Silicon N Channel Power MOS FET
Power Switching
REJ03G1166-0600
(Previous: ADE-208-665D)
Rev.6.00
Sep 07, 2005
Features
• Low on-resistance
RDS (on) = 12 mΩ typ
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• High speed switching
tf = 60 ns typ.
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
5 6 7 8
D D D D
65
87
1, 2, 3
4
5, 6, 7, 8
4
G
12
34
S S S
1 2 3
Rev.6.00 Sep 07, 2005 page 1 of 4
Source
Gate
Drain
HAT2036R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
12
V
A
96
12
A
A
2.5
150
W
°C
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel temperature
Pch
Tch
°C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
30
Typ
—
Max
—
Unit
V
IGSS
IDSS
—
—
—
—
±0.1
1
µA
µA
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
1.5
—
—
12
3.0
15
V
mΩ
VDS = 10 V, ID = 1 mA
Note 3
ID = 6 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
12
20
20
30
—
mΩ
S
ID = 6 A, VGS = 4.5 V
Note 3
ID = 6 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
1200
380
—
—
pF
pF
Reverse transfer capacitance
Total gate charge
Crss
Qg
—
—
200
23
—
—
pF
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to source charge
Gate to drain charge
Qgs
Qgd
—
—
4.0
6.0
—
—
nC
nC
VDD = 10 V
VGS = 10 V
ID = 12 A
Turn-on delay time
Rise time
td (on)
tr
—
—
40
300
—
—
ns
ns
VGS = 4.5 V, ID = 6 A,
VDD ≅ 10 V
Turn-off delay time
Fall time
td (off)
tf
—
—
35
60
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.9
35
—
—
V
ns
Gate to source leak current
Zero gate voltage drain current
Note:
3. Pulse test
Rev.6.00 Sep 07, 2005 page 2 of 4
Test Conditions
ID = 10 mA, VGS = 0
Note 3
IF = 12 A, VGS = 0
IF = 12 A, VGS = 0
diF/dt = 20 A/µs
Note 3
HAT2036R
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation
Pch (W)
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
0
0
50
100
Ambient Temperature
Rev.6.00 Sep 07, 2005 page 3 of 4
150
200
Ta (°C)
HAT2036R
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT2036R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Sep 07, 2005 page 4 of 4
Sales Strategic Planning Div.
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Colophon .3.0