DNA90YA2200NA

DNA90YA2200NA
3~
Rectifier
High Voltage Standard Rectifier
VRRM = 2200 V
I DAV =
90 A
I FSM =
370 A
Half 3~ Bridge, Common Anode
Part number
DNA90YA2200NA
Backside: isolated
1
3
2
4
Features / Advantages:
Applications:
Package: SOT-227B (minibloc)
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130125a
DNA90YA2200NA
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
2300
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
2200
V
IR
reverse current, drain current
VR = 2200 V
TVJ = 25°C
100
µA
VR = 2200 V
TVJ = 150°C
1.5
mA
TVJ = 25°C
1.23
V
1.70
V
1.21
V
VF
IF =
forward voltage drop
30 A
IF =
90 A
IF =
30 A
bridge output current
IF =
90 A
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
rectangular
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1.85
V
T VJ = 150 °C
90
A
TVJ = 150 °C
0.86
V
d=⅓
for power loss calculation only
Ptot
typ.
TVJ = 125 °C
TC = 85°C
I DAV
I²t
min.
11.4
mΩ
1.2
K/W
K/W
0.10
TC = 25°C
100
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
370
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
400
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
315
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
340
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
685
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
665
A²s
TVJ = 150 °C
495
A²s
480
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 700 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
7
pF
20130125a
DNA90YA2200NA
Package
Ratings
SOT-227B (minibloc)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max.
150
Unit
A
-40
150
°C
-40
150
°C
Weight
30
MD
mounting torque
MT
terminal torque
d Spp/App
d Spb/Apb
VISOL
abcde
YYWW Z
1.1
1.5
Nm
Nm
3.2
mm
terminal to backside
8.6
6.8
mm
3000
V
2500
V
50/60 Hz, RMS; IISOL ≤ 1 mA
Part number
Product Marking
Logo
1.5
10.5
t = 1 second
t = 1 minute
1.1
terminal to terminal
creepage distance on surface | striking distance through air
isolation voltage
g
D
N
A
90
YA
2200
NA
Part No.
XXXXXX
=
=
=
=
=
=
=
Diode
High Voltage Standard Rectifier
(>= 2000V)
Current Rating [A]
Half 3~ Bridge, Common Anode
Reverse Voltage [V]
SOT-227B (minibloc)
Assembly Code
DateCode
Assembly Line
Ordering
Standard
Part Number
DNA90YA2200NA
Similar Part
DNA90YC2200NA
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DNA90YA2200NA
Package
SOT-227B (minibloc)
* on die level
Delivery Mode
Tube
Code No.
513730
Voltage class
2200
T VJ = 150°C
Rectifier
V 0 max
threshold voltage
0.86
V
R 0 max
slope resistance *
9.5
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
10
Data according to IEC 60747and per semiconductor unless otherwise specified
20130125a
DNA90YA2200NA
Outlines SOT-227B (minibloc)
1
3
2
4
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130125a
DNA90YA2200NA
Rectifier
120
100
103
300
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
VR = 0 V
TVJ = 45°C
80
250
TVJ = 45°C
IFSM
IF
2
It
60
[A]
[A]
40
2
[A s]
TVJ = 150°C
200
TVJ = 150°C
20
50 Hz, 80% VRRM
0
0.5
1.0
1.5
2.0
102
150
0.001
2.5
VF [V]
0.01
0.1
1
1
t [s]
Fig. 2 Surge overload current
Fig. 1 Forward current versus
voltage drop per diode
2
3
4 5 6 7 8 910
t [ms]
2
Fig. 3 I t versus time per diode
80
RthKA =
50
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
dc =
1
0.5
0.4
0.33
0.17
0.08
40
Ptot
30
[W]
70
dc =
1
0.5
0.4
0.33
0.17
0.08
60
50
IF(AV)M
40
[A]
30
20
20
10
10
0
0
0
10
20
30
40
0
25
50
IF(AV)M [A]
75
100 125 150 175
0
25
50
75 100 125 150 175
TC [°C]
Tamb [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Max. forward current versus
case temperature
1.6
1.2
Constants for ZthJC calculation:
ZthJC
i
Rthi (K/W)
ti (s)
0.8
1
0.06
0.0004
[K/W]
2
0.2
0.00265
3
0.34
0.0045
4
0.4
0.0242
5
0.2
0.15
0.4
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130125a