IXKC 13N80C Advanced Technical Information CoolMOS™ 1) Power MOSFET ISOPLUS™ Package ID25 = 13 A = 800 V VDSS RDS(on) max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D q S S isolated back surface E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR TJ start = 25°C; single pulse; ID = 3.4 A TJ start = 25°C; repetitive; ID = 17 A dV/dt VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs Symbol Conditions 800 V ± 20 V 13 9 A A 670 0.5 mJ mJ 6 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = ID90 VGS(th) VDS = VGS; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS max. 250 290 mΩ 4 V 25 µA µA ±100 nA 2 TVJ = 25°C TVJ = 125°C 125 VGS = ± 20 V; VDS = 0 V Ciss Coss Crss VGS = 0 V; VDS = 25 V; f = 1 MHz Qg Qgs Qgd td(on) tr td(off) tf typ. 2300 1250 60 pF pF pF VGS = 0 to 10 V; VDS = 640 V; ID = ID90 90 10 40 nC nC nC VGS = 10 V; VDS = 640 V; TVJ = 125°C ID = 17 A; RG = 4.7 Ω 25 25 75 10 ns ns ns ns RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 1.0 • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation • 3rd generation CoolMOS™ 1) power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) • Low thermal resistance due to reduced chip thickness • Low drain to tab capacitance (<30 pF) Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density 1) CoolMOS™ is a trademark of Infineon Technologies AG. K/W 20080526b 1-4 IXKC 13N80C Advanced Technical Information Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 17 A; VGS = 0 V 1.0 trr QRM IRM IF = 17 A; -diF/dt = 100 A/µs; VR = 400 V 550 15 50 max. 17 A 1.2 V ns µC A Component Symbol Conditions Maximum Ratings TVJ Tstg operating VISOL RMS, lead-to-tab, 50/60 Hz, f = 1 minute FC mounting force Symbol Conditions -55...+150 -55...+150 °C °C 2500 V~ 11-65/2.4-11 N/lb. Characteristic Values min. RthCH typ. with heatsink compound Weight max. 0.3 K/W 2.7 g ISOPLUS220TM Outline A E D T SYM L1 * Note 1 L 2X b4 1 2 3 3X b 2X b2 c 2X e A2 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved A A2 b b2 b4 c D D1 E E1 e L L1 T INCHES MIN MAX .157 .197 .098 .118 .035 .051 .049 .065 .093 .100 .028 .039 .591 .630 .472 .512 .394 .433 .295 .335 .100 BASIC .512 .571 .138 .118 MILLIMETERS MIN MAX 4.00 5.00 2.50 3.00 0.90 1.30 1.25 1.65 2.35 2.55 1.00 0.70 15.00 16.00 12.00 13.00 10.00 11.00 8.50 7.50 2.55 BASIC 14.50 13.00 3.50 3.00 47.5 42.5 NOTE: 1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3. 2. This drawing will meet dimensional requirement of JEDEC SS Product Outline TO-273 except D and D1 dimension. 20080526b 2-4 IXKC 13N80C Advanced Technical Information 120 60 110 55 100 50 90 45 80 40 70 60 35 TJ = 25°C tp = 10 μs 30 10 V 6.5 V 8V 25 7V 20 6V 35 30 50 25 40 20 30 15 20 10 10 5 0 0 0 20 40 60 80 100 120 140 160 6V 4.5 V 5 I5 V 4V 0 5 10 Fig. 2 1.5 15 20 0 30 25 Typ. Output Characteris- 5 10 Fig. 3 65 1.6 15 1.4 25 30 Typ. Output Characteris- tp = 10 μs 25°C 55 ID = 11 A VGS = 10 V 50 1.2 1.2 45 6.5 V 1.0 RDS(on) [7] 1.1 1.0 0.9 40 ID [A] 6V 20 60 1.3 RDS(on) [7] 0 VDS [V] TJ = 150°C 1.4 5.5 V 5V 10 VDS [V] Power Dissipation 4 V 4.5 V 5 V 5.5 V 15 TC [°C] Fig. 1 20 V 10 V 8V 7V TJ = 150°C tp = 10 μs 20 V ID [A] 65 ID [A] 70 130 Ptot [ W] 140 0.8 0.6 0.8 7V 8V 10 V 20 V 0.7 35 150°C 30 25 98% 20 0.4 15 typ 10 0.2 0.6 5 0.5 0 5 10 15 20 25 30 0 -60 35 ID [A] Fig. 4 10 -20 20 60 100 140 0 180 0 TJ [°C] Fig. 5 Typ. Drain-Source on Resistance 2 Drain-Source On-State Resistance Fig. 6 10 10 12 16 18 20 4 Ciss 0.8 VDS max 10 3 10 2 10 1 10 0 C [pF] VGS [V] IF [A] 14 Typ. Transfer Characteris- 0.2 VDS max 8 6 Coss 0 T j = 25°C typ 4 T j = 150°C typ T j = 25°C (98%) -1 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3 0 20 Forward Characteristics of Body Diode 40 60 80 Fig. 8 120 Typ. Gate Charge IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 100 140 160 0 100 200 300 400 500 600 700 800 VDS [V] QG [nC] VSD [V] Fig. 7 Crss 2 T j = 150°C (98%) 10 10 1 10 10 8 VGS = 0 V f = 1 MHz 14 tp = 10 μs 6 5 ID = 17 A, pulsed 10 4 VGS [V] 16 12 2 Fig. 9 Capacitance 20080526b 3-4 Advanced Technical Information 700 980 ID = 3.4 A VDD = 50 V 650 960 600 940 550 920 500 900 V(BR)DSS [V] 450 EAS [mJ] IXKC 13N80C 400 350 300 880 860 840 820 250 200 800 150 780 100 760 50 740 0 25 50 75 100 125 150 TJ [°C] Fig. 10 Typ. Avalanche Energy 720 -60 -20 20 60 Fig. 11 140 180 Drain-Source Breakdown Voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 100 TJ [°C] 20080526b 4-4