To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 2, 4 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) ID 2 kΩ (Typ) 0.5 Ω (Typ) 3 2SD2423 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A 1 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Collector to emitter diode forward current ID 1.5 A Note: 1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm). Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 — 70 V I C = 100 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 50 — — V I C = 10 mA, RBE = ∞ Collector to emitter sustaining voltage VCEO(sus) 50 — 70 V I C = 1.5 A, RBE = ∞, L = 10 mH*1 Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 50 mA, IC = 0 Collector cutoff current I CEO — — 10 µA VCE = 40 V, RBE = ∞ DC current transfer ratio hFE 2000 — 10000 Collector to emitter saturation voltage VCE(sat)1 — — 1.5 V I C = 1 A, IB = 1 mA*1 Collector to emitter saturation voltage VCE(sat)2 — — 2.3 V I C = 1.5 A, IB = 1.5 mA*1 Base to emitter saturation voltage VBE(sat)1 — — 2.0 V I C = 1 A, IB = 1 mA*1 Base to emitter saturation voltage VBE(sat)2 — — 2.5 V I C = 1.5 A, IB = 1.5 mA*1 Emitter to collector diode forward voltage VD — — 3.5 V I D = 1.5 A*1 Notes: 1. Pulse test 2. Marking is “GT”. 2 VCE = 3 V, IC = 1 A*1 2SD2423 Area of Safe Operation (A) 10 IC Collector Current 0.1 50 100 150 200 Ambient Temperature Ta (°C) 1 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.01 DC Current Transfer Ratio vs. Collector Current 10000 h FE Pc = 1 W 5000 A 0.5 m 0.4 mA 0.3 mA 0.8 0.4 0 on 0.001 0.1 1 10 100 Cellector to Emitter Voltage V CE (V) 0.2 mA I B = 0 Ta = 25°C 1 2 3 4 5 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio I C (A) Collector Current 1.2 ati s er Typical Output Characteristics 1.6 Op Ta = 25°C 1 shot pulse 0 2.0 s DC m 10 0.5 1 = 1.0 1m 1.5 Pw Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 2.0 VCE = 3 V pulse Ta = 75°C 2000 1000 500 25°C –25°C 200 100 0.1 0.2 0.5 1 2 5 Collector Current I C (A) 10 3 2SD2423 2 1 Ta = –25°C 0.5 10 5 0.2 2 1 0.2 0.2 0.5 1 2 5 Collector Current I C (A) I C / I = 200 B 0.1 pulse 0.1 0.2 0.5 1 2 5 Collector Current I C (A) 10 Collector Current vs. Base to Emitter Voltage Collector Current I C (mA) VCE = 3 V 1000 pulse 100 25°C 75°C 30 10 3 1 0 4 Ta = –25°C 0.4 0.8 1.2 1.6 2.0 Base to Emitter Voltage V BE (V) 10 Collector Output Capacitance vs. Collector to Base Voltage 100 Collector Output Capacitance Cob (pF) 3000 300 Ta = –25°C 25°C 75°C 0.5 25°C 75°C 0.1 0.1 Base to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage V BE(sat) (V) Collector to Emitter Saturation Voltage V CE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 10 I C / I B = 200 5 pulse 50 Ta = 25°C IE = 0 f = 1 MHz 20 10 5 2 1 0.1 0.2 0.5 1 2 Collector to Base Voltage 5 10 V CB (V) 2SD2423 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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