IXKN 75N60C CoolMOS™ 1) Power MOSFET VDSS =600V ID25 = 75A RDS(on) max = 36mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 600 V ± 20 V 75 50 A A ID25 ID90 TC = 25°C TC = 90°C ID puls pulse drain current, tp limited by TJmax 250 A EAS EAR ID = 10 A; L = 36 mH ID = 20 A; L = 5 mH TC = 25°C TC = 25°C 1.8 1 J mJ dv/dt VDS < VDSS; IF < 100A | diF /dt | < 100A/µs TVJ = 125°C 6 V/ns Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = ID90 typ. max. 30 36 mW VGS(th) VDS = 20 V; ID = 5 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 0 to 10 V; VDS = 350 V; ID = 100 A 500 50 240 nC nC nC td(on) tr td(off) tf VGS = 10 V; VDS = 380 V ID = 100 A; RG = 1.0 Ω 20 30 110 10 ns ns ns ns VF (reverse conduction) IF = 37.5 A; VGS = 0 V 0.9 2.1 TVJ = 25°C TVJ = 125°C RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 3.9 V 50 µA µA ±200 nA 100 1.1 V 0.22 K/W •miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly •fast CoolMOS™ 1) power MOSFET 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness •Enhanced total power density Applications •Switched mode power supplies (SMPS) •Uninterruptible power supplies (UPS) •Power factor correction (PFC) •Welding •Inductive heating 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20100609c 1-4 IXKN 75N60C Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V ISM VSD IF = 85 A; VGS = 0 V trr QRM IRM IF = 85 A; -diF/dt = 200 A/µs; VR = 350 V 85 A 250 A 1.2 V 580 46 140 ns µC A Component Symbol Conditions Maximum Ratings TVJ Tstg operating Md mounting torque terminal connection torque (M4) Symbol Conditions °C °C 1.5 1.5 Nm Nm Characteristic Values min. RthCH -55...+150 -55...+125 typ. with heatsink compound max. 0.1 K/W 30 g Weight miniBLOC, SOT-227 B Outline H A J SYM G B K S C N W M V T D L F Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 Q R O P E A B C D E F G H J K L M N O P Q R S T U V W MILLIMETERS MIN MAX 31.50 31.88 7.80 8.20 4.09 4.29 4.09 4.29 4.09 4.29 14.91 15.11 30.12 30.30 37.80 38.23 11.68 12.22 8.92 9.60 0.76 0.84 12.60 12.85 25.15 25.42 1.98 2.13 4.95 5.97 26.54 26.90 3.94 4.42 4.72 4.85 24.59 25.07 -.05 .10 3.30 4.57 19.81 21.08 INCHES MIN MAX 1.240 1.255 .307 .323 .161 .169 .161 .169 .161 .169 .587 .595 1.186 1.193 1.489 1.505 .460 .481 .351 .378 .030 .033 .496 .506 .990 1.001 .078 .084 .195 .235 1.045 1.059 .155 .174 .186 .191 .968 .987 -.002 .004 .130 .180 .780 .830 U IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100609c 2-4 IXKN 75N60C Fig. 1. Output Char acter is tics @ 25 OC Fig. 7. Input Adm ittance 240 100 VGS = 10V 6V 5V tp = 300µs 90 80 210 180 I D - Amperes I D - Amperes 70 60 50 4.5V 40 30 150 120 90 TJ = 125ºC 25ºC -40ºC 60 20 30 4V 10 0 0 0 0.5 1 1.5 2 2.5 3 2 3.5 2.5 3 V D S - Volts 4 4.5 5 5.5 6 V G S - Volts Fig. 1 Fig. Typ.5. output characteristics R Nor m alized toID = f (VDS) Fig. transfer characteristics ID = f (VGS) Fig.24. Typ. RDS(on) Nor m alized to ID100 Value vs . Junction Tem per atur e DS(on) ID100 Value vs . ID 2.8 4 VGS = 10V 3.7 VGS = 10V 2.5 3.1 R D S (on) - Normalized tp = 300µs 3.4 R D S (on) - Normalized 3.5 TJ = 125ºC 2.8 2.5 2.2 1.9 1.6 1.3 TJ = 25ºC 1 tp = 300µs 2.2 1.9 I D = 60A 1.6 I D = 30A 1.3 1 0.7 0.7 0.4 0 40 80 120 160 200 240 280 320 360 I D - Amperes -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 3 Typical normalized RDS(on) = f (ID) Fig. 4 Typical normalized RDS(on) = f (TJ) 80 70 A ID 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 °C160 TC Fig. 5 Continuous drain current ID = f (TC) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Fig. 6 Typ. normalized VDSS = f (TJ), VGS(th) = f (TJ) 20100609c 3-4 IXKN 75N60C Fig. 2. Extended Output Char acter is tics @ 25 OC Fig. 10. Gate Char ge 10 360 VDS = 350V I D = 80A I G = 10mA 9 8 280 I D - Amperes 7 V G S - Volts VGS = 10V 7V tp = 300µs 320 6 5 4 3 6V 240 200 160 120 5V 80 2 40 1 0 0 0 60 120 180 240 300 360 420 480 0 540 2 4 6 8 10 12 14 16 18 V D S - Volts Q G - nanoCoulombs Fig. 7 Typ. turn-on gate charge characteristics Fig. 11. Capacitance Fig.Fig. 8 Forward Safe Area,ce-ToID = f (VDS) 9. Sour ce CurOperating r ent vs . Sour Dr ain Voltage 200 100000 f = 1MHz 180 C iss 160 I S - Amperes Capacitance - pF 10000 C oss 1000 140 120 100 TJ = 125ºC 80 60 100 TJ = 25ºC 40 C rss 20 0 10 0 10 20 30 40 50 60 70 80 90 100 V DS - Volts 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 V S D - Volts Fig. 9 Typ. capacitances C = f (VDS), f = 1 MHz Fig. 8. Tr ans conductance Fig. 10 Typ. forward characteristics of reverse diode, IS = f (VSD) 180 160 g f s - Siemens 140 TJ = -40ºC 25ºC 125ºC 120 100 80 60 40 20 0 0 30 60 90 120 150 180 210 240 I D - Amperes Fig. 11 Typical transconductance gfs = f (ID) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Fig. 12 Transient thermal resistance ZthJK = f (tp) 20100609c 4-4