DPG20C300PN

DPG20C300PN
HiPerFRED²
VRRM
=
300 V
I FAV
= 2x
10 A
t rr
=
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG20C300PN
Backside: isolated
1
2
3
Features / Advantages:
Applications:
Package: TO-220FP
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PN
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
300
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
300
V
IR
reverse current, drain current
VF
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
typ.
VR = 300 V
TVJ = 25°C
1
µA
VR = 300 V
TVJ = 150°C
0.06
mA
TVJ = 25°C
1.27
V
1.45
V
0.98
V
IF =
forward voltage drop
min.
10 A
IF =
20 A
IF =
10 A
IF =
20 A
TVJ = 150 °C
TC = 125°C
rectangular
1.17
V
T VJ = 175 °C
10
A
TVJ = 175 °C
0.74
V
d = 0.5
for power loss calculation only
17.7
mΩ
4.4
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 150 V f = 1 MHz
TVJ = 25°C
15
pF
I RM
max. reverse recovery current
TVJ = 25 °C
3
A
t rr
reverse recovery time
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
K/W
0.50
TC = 25°C
10 A; VR = 200 V
-di F /dt = 200 A/µs
35
140
W
A
TVJ = 125°C
5.5
A
TVJ = 25 °C
35
ns
TVJ = 125°C
45
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PN
Package
Ratings
TO-220FP
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
Weight
2
MD
mounting torque
FC
mounting force with clip
d Spp/App
d Spb/Apb
VISOL
terminal to terminal
1.6
terminal to backside
2.5
creepage distance on surface | striking distance through air
t = 1 second
isolation voltage
t = 1 minute
Product Marking
Part Number
Logo
DateCode
Assembly Code
50/60 Hz, RMS; IISOL ≤ 1 mA
g
0.4
0.6
Nm
20
60
N
1.0
mm
2.5
mm
2500
V
2100
V
Part number
D
P
G
20
C
300
PN
abcdef
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220ABFP (3)
YYWW Z
XXXXXX
Assembly Line
Ordering
Standard
Part Number
DPG20C300PN
Similar Part
DPG20C300PB
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DPG20C300PN
Package
TO-220AB (3)
* on die level
Delivery Mode
Tube
Code No.
503665
Voltage class
300
T VJ = 175 °C
Fast
Diode
V 0 max
threshold voltage
0.74
V
R 0 max
slope resistance *
14.5
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
50
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PN
Outlines TO-220FP
E
A
ØP
A1
Q
H
D
1 2 3
L1
A2
L
b1
c
b
e
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Millimeters
min
max
4.50
4.90
2.34
2.74
2.56
2.96
0.70
0.90
0.45
0.60
15.67 16.07
9.96 10.36
2.54 BSC
6.48
6.88
12.68 13.28
3.03
3.43
3.08
3.28
3.20
3.40
Dim.
2
A
A1
A2
b
c
D
E
e
H
L
L1
ØP
Q
Inches
min
max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.018 0.024
0.617 0.633
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a
DPG20C300PN
Fast Diode
30
0.4
12
TVJ = 125°C
VR = 200 V
25
TVJ = 25°C
125°C
150°C
20
IF
10
IF = 5 A
0.3
20 A
10 A
0.2
[A]
10 A
20 A
IRR
Qrr
15
8
[μC]
5A
6
[A]
10
4
0.1
5
TVJ = 125°C
2
0
0.0
0.0
0.4
0.8
1.2
1.6
2.0
VR = 200 V
0
0
100
200
300
400
500
0
100
200
-diF /dt [A/μs]
VF [V]
Fig. 1 Forward current
IF versus VF
300
400
500
-diF /dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRR versus -diF /dt
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
100
12
400
9
300
TVJ = 125°C
VR = 200 V
1.2
80
trr 60
0.8
Kf
VFR
IRR
10 A
0.4
[V]
5A
Qrr
0
40
80
120
160
[ns]
TVJ [°C]
100
200
300
400
500
0
10
100
200
300
400
0
500
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 4 Typ. dynamic parameters
Qrr, IRR versus TVJ
100
tfr
0
0
200
VFR
3
20
0.0
0
IF = 10 A
VR = 200 V
6
IF = 20 A
[ns] 40
tfr
TVJ = 125°C
Fig. 6 Typ. forward recov. voltage
VFR and tfr versus diF /dt
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
10
TVJ = 125°C
VR = 200 V
8
IF = 5 A
Erec 6
ZthJH
10 A
20 A
1
[K/W]
[μJ] 4
Rthi [K/W]
0.3474
0.633
0.5473
2.162
0.7102
2
0
0
100
200
300
400
500
0.1
0.001
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
0.01
0.1
1
10
ti [s]
0.0003
0.0035
0.029
1.2
7.8
100
t [s]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131126a