IXA55I1200HJ preliminary XPT IGBT VCES = 1200 V I C25 = 84 A VCE(sat) = 1.8 V Single IGBT Part number IXA55I1200HJ Backside: isolated (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20090409 IXA55I1200HJ preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 50 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE I CES collector emitter leakage current VCE = VCES; VGE = 0 V gate emitter leakage current VGE = ±20 V total gate charge VCE = 600 V; VGE = 15 V; IC = t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 2.1 V 6.5 V 0.1 mA TVJ = 25°C TVJ = 25°C 50 A VGE = ±15 V; R G = 15 Ω VGE = ±15 V; R G = 15 Ω VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 15 Ω; non-repetitive thermal resistance junction to case R thCH thermal resistance case to heatsink A A 1.8 V 2.1 5.5 6.0 mA 0.1 nA 190 nC 70 ns 40 ns 250 ns 100 ns 4.5 mJ 5.5 mJ TVJ = 125 °C VCEmax = 1200 V I SC V 84 W 50 A short circuit safe operating area R thJC ±30 54 TVJ = 125 °C SCSOA short circuit current V 500 inductive load VCE = ±20 290 TVJ = 125 °C Q G(on) Unit V TC = 25°C TVJ = 25°C I GES max. 1200 TC = 80 °C TVJ = 125 °C I CM typ. TVJ = 125 °C 150 A 10 µs A 200 0.43 K/W K/W 0.25 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C tbd A TC = 80 °C tbd A TVJ = 25°C tbd V * mA I F 80 VF forward voltage IF = A IR reverse current VR = VRRM TVJ = 125°C TVJ = 25°C * not applicable, see Ices value above V tbd * mA tbd µC tbd A TVJ = 125°C Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case tbd K/W R thCH thermal resistance case to heatsink K/W IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved VR = 600 V -di F /dt = IF = A/µs A; VGE = 0 V TVJ = 125°C tbd ns tbd mJ Data according to IEC 60747and per semiconductor unless otherwise specified 20090409 IXA55I1200HJ preliminary Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 °C -40 125 °C 150 °C Weight 6 FC 20 mounting force with clip d Spp/App VISOL mm terminal to backside 4.1 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute Product Marking Part number I X A 55 I 1200 HJ IXYS Logo N 2.7 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Single IGBT Reverse Voltage [V] ISOPLUS247 (3) ISOPLUS® XXXXXXXXX Zyyww Part No. Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number IXA55I1200HJ Equivalent Circuits for Simulation I V0 R0 Marking on Product IXA55I1200HJ Delivery Mode Tube IGBT threshold voltage 1.1 V R 0 max slope resistance * 28 mΩ © 2009 IXYS all rights reserved Code No. 508000 T VJ = 150 °C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20090409 IXA55I1200HJ preliminary Outlines ISOPLUS247 A2 E E1 D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 3x b 2x b2 c b4 Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e A1 Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W (C) 2 (G) 1 (E) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20090409 IXA55I1200HJ preliminary IGBT 100 100 VGE = 15 V 80 13 V 80 60 60 TVJ = 25°C IC TVJ = 125°C IC TVJ = 125°C [A] 40 [A] 40 20 9V 20 0 0 0 1 2 3 0 1 2 VCE [V] 3 4 VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 100 20 IC = 50 A VCE = 600 V 80 15 IC 60 [A] 11 V VGE = 15 V 17 V 19 V VGE 10 [V] 40 5 TVJ = 125°C 20 TVJ = 25°C 0 0 5 6 7 8 9 10 11 12 0 13 40 80 160 200 240 QG [nC] VGE [V] Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 10 6.0 Eon RG = 15 VCE = 600 V VGE = ±15 V TVJ = 125°C 8 120 Eoff Eoff 5.5 6 E E 5.0 [mJ] [mJ] 4 IC = 50 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 4.5 2 0 0 20 40 60 80 100 120 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved 4.0 12 16 20 24 28 32 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per semiconductor unless otherwise specified 20090409