POWER Efficiency Through Technology N E W P R O D U C T B R I E F 900V Polar HiPerFETTM Power MOSFETs rugged, energy efficient mosfet solutions for power conversion systems january 2010 OVERVIEW IXYS expands its Polar HiPerFETTM MOSFET product portfolio with the introduction of its new 900V HiPerFETTM Power MOSFETs. Available with drain current ratings from 10.5 Amperes to 56 Amperes, these new 900V additions compliment IXYS’ high-voltage Polar HiPerFETTM MOSFET product line (Available from 500V to 1200V), providing the end-customer a broader selection range of robust, energy-efficient high-voltage MOSFET solutions to choose from. These new 900V devices combine advantages derived from IXYS’ Polar Technology platform and HiPerFETTM process to provide improved power efficiency and reliability in today’s demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS’ Polar Technology platform has been especially tailored to minimize on-state resistance while maintaining low gate charge, thus providing a FOM (Figure of Merit: Rdson multiplied by Qg) as low as 48Ohm/nanocoulomb, resulting in a substantial reduction in conduction and switching losses of the device. Lower thermal impedances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Power switching capabilities and device ruggedness of these devices is further enhanced through the utilization of IXYS’ HiPerFETTM process, yielding a device with a fast intrinsic diode for low reverse recovery charge (Qrr) and improved turn-off dV/dt immunity. The enhanced dV/dt withstand capability of these devices offer significant safety margins for the stresses encountered in high-voltage switching applications. These combined device attributes allow for improved efficient topologies in hard-switching inverters, switch-mode/resonant-mode power supplies, high voltage lighting, AC/DC motor drives, Robotics/servo controls, industrial machinery, and active power factor correction circuits. IXYS offers a full range of discrete standard thru-hole and surface mount packages for these new 900V Polar HiPerFETTM devices. In addition, versions will be offered in IXYS proprietary ISOPLUS packages, providing UL recognized 2500V isolation with superior thermal cycling and thermal performance. Features International standard packages ISOPLUSTM high performance package options (2500V electrical isolation) Fast intrinsic diode Avalanche rated Low package inductance Excellent ruggedness and dV/dt capability High power density applications Switch-mode and resonant-mode power supplies DC/DC converters Laser drivers AC and DC motor drives Robotics and servo controls Industrial machinery Active PFC circuits IT & Telecom applications www.ixys.com benefits Increased current handling capability Maximized package efficiency Reduced component count Reduce circuit complexity Greater reliability Low gate drive requirement Easy to mount High power density 900V Polar HiPerFETTM Power MOSFETs Summary Table Part Number Vdss max (V) ID(cont) Tc=25oC (A) Rds(on) max TJ=25oC (W) Ciss typ (pf) Qg typ (nC) trr typ (ns) RthJC max (oC/W) Pd (W) Configuration Package Type IXFR18N90P 900 10.5 0.660 5230 97 300 0.620 200 Single ISOPLUS247TM IXFH12N90P 900 12.0 0.900 3080 56 300 0.330 380 Single TO-247 IXFV12N90P 900 12.0 0.900 3080 56 300 0.330 380 Single PLUS220 IXFV12N90PS 900 12.0 0.900 3080 56 300 0.330 380 Single PLUS220SMD IXFR24N90P 900 13.0 0.460 7200 130 300 0.540 230 Single ISOPLUS247TM IXFH18N90P 900 18.0 0.600 5230 97 300 0.230 540 Single TO-247 IXFT18N90P 900 18.0 0.600 5230 97 300 0.230 540 Single TO-268 IXFV18N90P 900 18.0 0.600 5230 97 300 0.230 540 Single PLUS220 IXFV18N90PS 900 18.0 0.600 5230 97 300 0.230 540 Single PLUS220SMD IXFR40N90P 900 21.0 0.230 14000 230 300 0.420 300 Single ISOPLUS247TM IXFH24N90P 900 24.0 0.420 7200 130 300 0.190 660 Single TO-247 IXFT24N90P 900 24.0 0.420 7200 130 300 0.190 660 Single TO-268 IXFN40N90P 900 33.0 0.210 14000 230 300 0.180 695 Single SOT-227 IXFK40N90P 900 40.0 0.210 14000 230 300 0.130 960 Single TO-264 IXFX40N90P 900 40.0 0.210 14000 230 300 0.130 960 Single PLUS247 IXFN52N90P 900 43.0 0.160 19000 308 300 0.140 890 Single SOT-227 IXFB52N90P 900 52.0 0.160 19000 308 300 0.100 1250 Single PLUS264 IXFN56N90P 900 56.0 0.135 23000 375 300 0.125 1000 Single SOT-227 Application Circuits Full Bridge Welding Converter The figure on the left illustrates a general full-bridge phase-shift ZVT (zero-voltage transition) welding converter circuit. This circuit Output Choke S3 S1 Primary Rectifier T1 D1 topology consists of a primary rectifier, full-bridge converter, D3 Arc Load C1 Voltage Mains Polar HiPerFETTM Power MOSFETs are ideally suited for use in the LR S4 S2 high frequency transformer, and secondary rectifier stage. 900V High Frequency D2 Transformer D4 full bridge converter stage of this circuit topology, providing fast switching capabilities and low conduction losses. ISOPLUSTM Packages with Internal Alumina DCB Isolation* DCB Bond wires The figure on the right illustrates an ISOPLUSTM 247 cross-section. Ceramic Copper Copper ISOPLUSTM package provides improved creepage distance to simplify Solder Leads compliance with regulatory high-voltage spacing requirements. The copper-bonded, isolated ceramic substrate enhances overall device Mould Chip reliability by greatly improving thermal and power cycling, and the isolated backside simplifies mounting while yielding superior Package Advantages thermal impedance. The molding epoxies utilized meet the UL 94V-0 Provides 2500V, UL recognized isolation with superior thermal performance (E153432). Improves termperature and power cycling capability. Cost effective clip mounting. flammability classification. Backed up with multiple U.S. Patents and UL recognition, the ISOPLUSTM * Patent No. 6,404,065; 6,404,065; 6,534,343; 6,583,505; 6,710,463; 6,731,002; 7,005,734 * For information regarding IXYS ISoPLUS packages, visit http://www.ixys.com/IXAN0022.pdf January 2010 www.ixys.com packaging advantage is available only from IXYS. PBN90POLARHIPERFET 1.1