MIXA20W1200MC Six-Pack XPT IGBT VCES =1200 V IC25 = 28 A VCE(sat)= 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: •Easy paralleling due to the positive temperature coefficient of the on-state voltage •Rugged XPT design (Xtreme light Punch Through) results in: -short circuit rated for 10 µsec. -very low gate charge -square RBSOA @ 3x IC -low EMI •Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) •SONIC™ diode - fast and soft reverse recovery - low operating forward voltage •AC motor drives •Solar inverter •Medical equipment •Uninterruptible power supply •Air-conditioning systems •Welding equipment •Switched-mode and resonant-mode power supplies •"ECO-PAC2" standard package •Easy to mount with two screws •Insulated base plate •Soldering pins for PCB mounting •Space and weight savings •Improved temperature and power cycling capability •High power density IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110304b 1-6 MIXA20W1200MC Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 28 20 A A TC = 25°C 100 W collector emitter saturation voltage IC = 16 A; VGE = 15 V TVJ= 25°C TVJ=125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VGE = ±20 V VCE = 600 V; VGE = 15 V; IC = 15 A QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 56 W RBSOA reverse bias safe operating area VGE = ±15 V; RG = 56 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 56 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) min. typ. TVJ= 25°C 1.8 2.1 5.5 TVJ=125°C 6.0 6.5 V 0.02 0.2 0.2 mA mA 500 nA 47 nC 70 40 250 100 1.55 1.7 ns ns ns ns mJ mJ TVJ=125°C VCEK = 1200 V TVJ = 125°C 45 A 10 µs A 1.3 K/W max. Unit 60 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage min. typ. TVJ= 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 33 22 A A VF forward voltage IF = 20 A; VGE = 0 V TVJ= 25°C TVJ=150°C 1.95 1.85 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/µs IF = 20 A; VGE = 0 V TVJ=125°C 3 20 350 0.7 RthJC thermal resistance junction to case (per diode) µC A ns mJ 1.5 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110304b 2-6 MIXA20W1200MC Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage Md mounting torque (M5) dS dA creep distance on surface strike distance through air Conditions -40 Ratings typ. max. 125 150 125 Unit °C °C °C 3600 V~ IISOL < 1 mA; 50/60 Hz; t = 1 s Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved min. -40 1.5 2 11.2 11.2 Nm mm mm 24 g 20110304b 3-6 MIXA20W1200MC Circuit Diagram O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Outline Drawing Dimensions in mm (1 mm = 0.0394“) 2.6 26.4 19.5 16.4 10 5.5 O N H R P K J 13 14 15 4.5 T S W V 10 11 12 34.3 F 4.5 M L I G 12 D 4.5 7 8 9 0.5 E 31.6 25.9 C B 4 5 6 12.9 26.4 1 2 3 A 16 17 18 31.6 X 1 2.6 1.3 1.5 6.9 4.3 8 15.3 8.3 21.2 24.1 2 43 2.6 1 20.3 10 11.3 51 Product Marking Part number M = Module I = IGBT X = XPT A = Standard 20 = Current Rating [A] W = Six-Pack 1200 = Reverse Voltage [V] MC = ECO-PAC2 Logo Date Code YYCW Lot# XXX XX-XXXXX Circuit Diagram Marking on product Ordering Part Name Marking on Product Standard MIXA20W1200MC MIXA20W1200MC IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 6 509537 20110304b 4-6 MIXA20W1200MC Inverter T1 - T6 30 IC [A] 30 VGE = 15 V 25 25 20 20 TVJ = 25°C 15 IC TVJ = 125°C 11 V TVJ = 125°C 15 [A] 10 9V 10 5 0 13 V VGE = 15 V 17 V 19 V 5 0 1 2 0 3 VCE [V] Fig. 1 Typ. output characteristics 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC [A] VGE 15 10 [V] 10 5 0 5 TVJ = 125°C TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 10 20 4 E Eon 2.4 Eoff E [mJ] [mJ] 1 5 10 60 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 140 160 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C 2.0 1.6 0 50 2.8 RG = 56 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 2 0 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3 30 QG [nC] VGE [V] 1.2 40 Eoff Eon 60 80 100 120 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20110304b 5-6 MIXA20W1200MC 40 5 TVJ = 125°C VR = 600 V 30 4 40 A IF Qrr 20 [A] 3 20 A [µC] TVJ = 125°C 10 2 TVJ = 25°C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 300 400 500 diF /dt [A/µs] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt Fig. 7 Typ. Forward current versus VF 35 700 40 A TVJ = 125°C 30 20 A 25 TVJ = 125°C 600 VR = 600 V VR = 600 V 500 10 A IRR 20 [A] 15 [ns] 300 10 200 5 100 trr 0 200 300 400 500 diF /dt [A/µs] 600 400 40 A 20 A 10 A 0 200 700 Fig. 9 Typ. peak reverse current IRM vs. di/dt 300 400 500 diF /dt [A/µs] 600 700 Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125°C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] [K/W] 0.6 0.1 10 A 0.4 0.2 200 300 400 500 diF /dt [A/µs] 600 700 Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.01 0.001 0.01 0.1 tp [s] 1 10 Fig. 12 Typ. transient thermal impedance 20110304b 6-6